pin configuration NPN transistor 2n3906
Abstract: 2N3906 transistor 2N3906 2N3906-BULK 2N3906BU 2N3906 APPLICATION 2n3906 hie 2N3904 2N3906-TAP MMBT3906
Text: 2N3906 VISHAY Vishay Semiconductors Small Signal Transistor PNP Features • PNP Silicon Epitaxial Planar Transistor switching and amplifier applications. • As complementary type, the NPN transistor 2N3904 is recommended. • On special request, this transistor is also manufactured in the pin configuration TO-18.
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2N3906
2N3904
OT-23
MMBT3906.
2N3906-BULK
D-74025
01-Sep-04
pin configuration NPN transistor 2n3906
2N3906
transistor 2N3906
2N3906BU
2N3906 APPLICATION
2n3906 hie
2N3906-TAP
MMBT3906
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pin configuration NPN transistor 2N3904
Abstract: 2N3904 CIRCUIT 2N3904
Text: 2N3904 VISHAY Vishay Semiconductors Small Signal Transistor NPN Features • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the PNP transistor 2N3906 is recommended. • On special request, this transistor is also manufactured in the pin configuration TO-18.
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2N3904
2N3906
OT-23
MMBT3904.
D-74025
18-Aug-04
pin configuration NPN transistor 2N3904
2N3904 CIRCUIT
2N3904
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2N3906 plastic
Abstract: transistor 2n3904
Text: 2N3906 VISHAY Vishay Semiconductors Small Signal Transistor PNP Features • PNP Silicon Epitaxial Planar Transistor switching and amplifier applications. • As complementary type, the NPN transistor 2N3904 is recommended. • On special request, this transistor is also manufactured in the pin configuration TO-18.
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2N3906
2N3904
OT-23
MMBT3906.
D-74025
18-Aug-04
2N3906 plastic
transistor 2n3904
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BFR540
Abstract: MSB003
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR540 NPN 9 GHz wideband transistor Product specification Supersedes data of 1995 September 1999 Aug 23 Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFR540 The transistor is encapsulated in a
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BFR540
BFR540
125006/03/pp16
MSB003
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BFG35
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor
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BFG35
OT223
MSB002
OT223.
125006/03/pp16
BFG35
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BUJ103AX
Abstract: BP317 BU1706AX
Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103AX Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended
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BUJ103AX
SCA60
135104/240/02/pp12
BUJ103AX
BP317
BU1706AX
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BP317
Abstract: BU1706AX BUJ204AX
Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ204AX Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended
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BUJ204AX
SCA60
135104/204/02/pp12
BP317
BU1706AX
BUJ204AX
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use
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BUJ103A
O220AB
SCA60
135104/240/02/pp12
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BUJ204A
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ204A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for
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BUJ204A
O220AB
SCA60
135104/240/02/pp12
BUJ204A
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str 6707
Abstract: philips 23 2108 npn transistor ic str 6707 TO-202 transistor NPN BF859 BP317 D-20097 transistor d 2333 philips ltd 202
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D067 BF859 NPN high-voltage transistor Product specification Supersedes data of 1996 Dec 09 1999 Apr 14 Philips Semiconductors Product specification NPN high-voltage transistor BF859 DESCRIPTION NPN transistor in a TO-202 plastic package.
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M3D067
BF859
O-202
MBH794
O-202)
SCA63
115002/00/03/pp8
str 6707
philips 23
2108 npn transistor
ic str 6707
TO-202 transistor NPN
BF859
BP317
D-20097
transistor d 2333
philips ltd 202
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transistor BUJ100
Abstract: cfl circuits cfl Self-Oscillating Philips cfl buj100 equivalent BALLAST low loss philips buj100 transistor BEP transistor BUJ100 cfl circuit
Text: PHILIPS SEMICONDUCTORS APPLICATION NOTE Philips' BUJ100 transistor in TO-92 suits all Compact Fluorescent Lamp powers Philips Semiconductors has developed a new generation of planar passivated, fast switching bipolar lighting transistor that breaks new ground in lighting-transistor technology. Rated at 700 V
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BUJ100
transistor BUJ100
cfl circuits
cfl Self-Oscillating
Philips cfl
buj100 equivalent
BALLAST low loss philips
buj100 transistor
BEP transistor
cfl circuit
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339 marking code SMD transistor
Abstract: TRANSISTOR SMD MARKING CODE SP TRANSISTOR SMD MARKING CODE dk MARKING CODE 03 JAPAN transistor 5- pin smd IC 358
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA114EEF PNP resistor-equipped transistor Preliminary specification 1998 Nov 11 Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA114EEF FEATURES • Power dissipation comparable to
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M3D425
PDTA114EEF
SC-89
OT490)
PDTC114EEF.
SCA60
115104/00/01/pp8
339 marking code SMD transistor
TRANSISTOR SMD MARKING CODE SP
TRANSISTOR SMD MARKING CODE dk
MARKING CODE 03
JAPAN transistor
5- pin smd IC 358
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PDTC143XE
Abstract: PDTA143XE
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC143XE NPN resistor-equipped transistor Product specification File under Discrete Semiconductors, SC04 1998 May 29 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143XE FEATURES
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M3D173
PDTC143XE
PDTC143XE
MAM346
SC-75
OT416)
SCA60
115104/1200/01/pp8
PDTA143XE
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BY206
Abstract: BRY61 BZY88C8V2 BRY61 EQUIVALENT "Programmable Unijunction Transistor" unijunction application note
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BRY61 Programmable unijunction transistor Product specification Supersedes data of 1997 Jul 21 1999 Apr 27 Philips Semiconductors Product specification Programmable unijunction transistor DESCRIPTION
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M3D088
BRY61
MGL167
MGC421
SCA63
115002/00/03/pp8
BY206
BRY61
BZY88C8V2
BRY61 EQUIVALENT
"Programmable Unijunction Transistor"
unijunction application note
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MARKING SMD PNP TRANSISTOR R 172
Abstract: TRANSISTOR SMD MARKING CODE SP TRANSISTOR SMD MARKING CODE al TRANSISTOR SMD MARKING CODE 501 PDTA114EEF SMD transistor MARKING CODE 43 SMD transistor MARKING CODE 213 marking code UL SMD Transistor TRANSISTOR SMD MARKING CODE rd SMD TRANSISTOR MARKING 821
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA114EEF PNP resistor-equipped transistor Preliminary specification Supersedes data of 1998 Nov 11 1999 May 21 Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA114EEF FEATURES
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M3D425
PDTA114EEF
115002/00/02/pp8
MARKING SMD PNP TRANSISTOR R 172
TRANSISTOR SMD MARKING CODE SP
TRANSISTOR SMD MARKING CODE al
TRANSISTOR SMD MARKING CODE 501
PDTA114EEF
SMD transistor MARKING CODE 43
SMD transistor MARKING CODE 213
marking code UL SMD Transistor
TRANSISTOR SMD MARKING CODE rd
SMD TRANSISTOR MARKING 821
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marking P33 transistor
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PDTC143TT NPN resistor-equipped transistor Product specification File under Discrete Semiconductors, SC04 1998 May 29 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143TT
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M3D088
PDTC143TT
MAM360
PDTC143TT
SCA60
115104/1200/01/pp8
marking P33 transistor
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2n3904, itt
Abstract: pin configuration NPN transistor 2n3906 6,8 ITT TRANSISTOR 2N3904 E 25 ITT Intermetall
Text: 2N3906 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type, the NPN transistor 2N3904 is recommended. On special request, this transistor is also manufactured in the pin configuration TO-18. L m ax. 0 0 . 5 5
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2N3906
2N3904
500pLS
2n3904, itt
pin configuration NPN transistor 2n3906
6,8 ITT
TRANSISTOR 2N3904 E 25
ITT Intermetall
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transistor 9015 c
Abstract: transistor c 9015 C 9015 transistor pnp transistor 9015 9015 transistor 9015 V. 9015 c af 9015 transistor 9015 LM 9015
Text: HN 9015 PNP Silicon Expitaxial Planar Transistor for switching and AF am plifier applications. The transistor is subdivided into four groups, A, B, C, and D, according to its DC current gain. As com plem entary type the NPN transistor HN 9014 is recommended.
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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transistor 9014 C npn
Abstract: V. 9014 c C 9014 transistor TRANSISTOR c 9014 9014 C transistor 9014 NPN transistor 9014 c 9014 Transistor S 9014 npn V 9014 c
Text: HN 9014 NPN Silicon Expitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C, and D, acco rd in g to its DC current gain. As com plem entary type the PNP transistor HN 9015 is recommended.
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MARKING SMD pnp TRANSISTOR ec
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS PDTC124XEF NPN resistor-equipped transistor Preliminary specification Supersedes data of 1998 Nov 11 Philips Semiconductors 1999 May 18 PHILIPS PHILIPS Philips Semiconductors Preliminary specification NPN resistor-equipped transistor
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PDTC124XEF
PDTC124XEF
SCA64
5002/00/02/pp8
MARKING SMD pnp TRANSISTOR ec
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS PDTC114TU NPN resistor-equipped transistor Preliminary specification Supersedes data of 1998 May 19 Philips Semiconductors 1999 Apr 16 PHILIPS PHILIPS Philips Semiconductors Preliminary specification NPN resistor-equipped transistor
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PDTC114TU
OT323
PDTC114TU
SCA63
5002/00/03/pp8
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PDTC144ET
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS PDTC144ET NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 19 Philips Semiconductors 1999 Apr 16 PHILIPS PHILIPS Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC144ET
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PDTC144ET
PDTC144ET
PDTA144cs
SCA63
15002/00/05/pp8
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t416
Abstract: 817 CN
Text: DISCRETE SEMICONDUCTORS PDTC114YE NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 19 Philips Semiconductors 1999 May 18 PHILIPS PHILIPS Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114YE
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PDTC114YE
PDTC114YE
5002/00/03/pp8
t416
817 CN
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