TRANSISTOR 2120 Search Results

TRANSISTOR 2120 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR 2120 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Carlo Gavazzi G2120 Abstract: dupline carlo gavazzi module 2120 transistor 2120 Carlo Gavazzi CHANNEL GENERATOR dupline 128 G21205502 i3 2120 Text: Input-Module for Elevators Type G 2120 5501 700, G 2120 5502 700 Du line Fieldbus Installationbus • 8-channel transmitter • 8 contact or NPN transistor inputs G2120 5501 or 8 voltage or PNP transistor inputs (G2120 5502) • Open printed circuit board	Original	PDF	G2120 8047-bracket Carlo Gavazzi G2120 dupline carlo gavazzi module 2120 transistor 2120 Carlo Gavazzi CHANNEL GENERATOR dupline 128 G21205502 i3 2120
transistor 625 Abstract: transistor case To 105 TO-18 TRANSISTOR 12G-V 343 transistor Text: MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# MPSA06 Features l NPN Small Signal Transistor 625 mW NPN Silicon Epitaxial planar Transistor for switching and amplifier applications l As complementary type, the PNP transistor is MPSA56	Original	PDF	MPSA06 MPSA56 100mA, 100mA 100MHz transistor 625 transistor case To 105 TO-18 TRANSISTOR 12G-V 343 transistor
MRA936 Abstract: BLF276 sot119d sot119d3 TRANSISTOR 0835 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF276 VHF power MOS transistor Product specification December 1997 Philips Semiconductors Product specification VHF power MOS transistor FEATURES BLF276 PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability	Original	PDF	BLF276 MBB072 MSA308 OT119 MRA936 BLF276 sot119d sot119d3 TRANSISTOR 0835
T6661 Abstract: MMFT6661T1 MMFT6661 MARKING WAW B8 SOT223 T6661 SOT-223 Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MMH6661T1/D DATA — — Medium Power Field Effect Transistor MMFT6661TI MotorolaPreferred Devise N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surface Mount This TMOS medium power field effect transistor is designed for	Original	PDF	MMH6661T1/D MMFT6661TI OT-223 602-2WW9 MMm6661T1/D T6661 MMFT6661T1 MMFT6661 MARKING WAW B8 SOT223 T6661 SOT-223
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: AFT21S240-12S Rev. 0, 4/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 55 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.	Original	PDF	AFT21S240--12S AFT21S240-12SR3
Untitled Abstract: No abstract text available Text: Document Number: AFT27S006N Rev. 0, 10/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.	Original	PDF	AFT27S006N AFT27S006NT1
c5750x7s2a106m Abstract: AD255A mosfet mttf aft20p06 Text: Freescale Semiconductor Technical Data Document Number: AFT20P060-4N Rev. 0, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 6.3 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 2170 MHz.	Original	PDF	AFT20P060--4N AFT20P060-4NR3 DataAFT20P060--4N 1/2013Semiconductor, c5750x7s2a106m AD255A mosfet mttf aft20p06
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: AFT20P060-4N Rev. 0, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 6.3 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 2170 MHz.	Original	PDF	AFT20P060--4N AFT20P060 AFT20P060-4NR3 1/2013Semiconductor,
Untitled Abstract: No abstract text available Text: Document Number: AFT27S010N Rev. 0, 11/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.	Original	PDF	AFT27S010N AFT27S010NT1
Untitled Abstract: No abstract text available Text: Document Number: AFT27S006N Rev. 1, 11/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.	Original	PDF	AFT27S006N AFT27S006NT1
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: AFT27S006N Rev. 2, 9/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 3600 MHz.	Original	PDF	AFT27S006N AFT27S006NT1
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25L Rev. 0, 10/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25LR5 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to	Original	PDF	MRFE6VS25L MRFE6VS25LR5
D260-4118-0000 Abstract: 0119A 0190A Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25L Rev. 0, 10/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25LR5 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to	Original	PDF	MRFE6VS25L MRFE6VS25LR5 D260-4118-0000 0119A 0190A
pm2222a Abstract: pm2222 pzt222a PZT2222AT1 PZT2222AT3 PZT2907AT1 QS 100 NPN Transistor MARK WAW Text: MOTOROU Order this document by P~2222AT1/D SEMICONDUCTOR TECHNICAL DATA NPN Siiicon Planar Epitmia[ Transistor PzT222aTl Motorola PrsferredDevlcs This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is	Original	PDF	2222AT1/D PzT222aTl OT-223 PZT2907AT1 2PHXSM57F-1 Pm2222AT1/D pm2222a pm2222 pzt222a PZT2222AT1 PZT2222AT3 PZT2907AT1 QS 100 NPN Transistor MARK WAW

package 20223 Abstract: No abstract text available Text: e PTB 20245 35 Watts, 2.1–2.2 GHz Wide-Band CDMA Power Transistor Description The 20245 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz frequency band. Rated at 35 watts minimum output power for PEP applications, it is	Original	PDF	G-200 1-877-GOLDMOS 1301-PTB package 20223
Johanson Piston Trimmer Abstract: G200 Text: e PTB 20235 70 Watts, 2.1–2.2 GHz Wideband CDMA Power Transistor Description The 20235 is a class AB, NPN, push-pull RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 70 watts PEP minimum output power, it is specifically intended for operation as a	Original	PDF	1-877-GOLDMOS 1301-PTB Johanson Piston Trimmer G200
PTB 20245 Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ Text: e PTB 20245 35 Watts, 2.1–2.2 GHz Wide-Band CDMA Power Transistor Description The 20245 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz frequency band. Rated at 35 watts minimum output power for PEP applications, it is	Original	PDF	G-200 1-877-GOLDMOS 1301-PTB PTB 20245 RF NPN POWER TRANSISTOR C 10-12 GHZ
Johanson Piston Trimmer Abstract: Transistor 025l Text: e PTB 20235 70 Watts, 2.1–2.2 GHz Wideband CDMA Power Transistor Description The 20235 is a class AB, NPN, push-pull RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 70 watts PEP power output, it is specifically intended for operation as a final stage	Original	PDF	1-877-GOLDMOS 1301-PTB Johanson Piston Trimmer Transistor 025l
2sb504 Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52 Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle	OCR Scan	PDF
itt 3906 Abstract: 2n3904 TRANSISTOR REPLACEMENT GUIDE 2n2222 itt 741TC 2n3904, itt itt 3904 741CE 2N3799 MOTOROLA TRANSISTOR REPLACEMENT GUIDE itt 2n2222 Text: SPRflGUE "ZT SERIES TPQ QUAD TRAHSISTOR ARRAYS The Sprague Series TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent transistors. Shown are eight NPN types, Five PNP types, and nine NPN/PNP dual complementary pairs.	OCR Scan	PDF	14-lead MC1439G MC1439P1 MC1741CG MC1741CP1 MC3003 MC3491P* MC7437L MC7438L MC75451P itt 3906 2n3904 TRANSISTOR REPLACEMENT GUIDE 2n2222 itt 741TC 2n3904, itt itt 3904 741CE 2N3799 MOTOROLA TRANSISTOR REPLACEMENT GUIDE itt 2n2222
1NBA Abstract: resistor PT-200 Text: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE FA1A4Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR M INI MOLD FEATURES PACKAGE DIMENSIONS • in millimeters Resistor Built-in T Y P E o—V W 2.8 + 0.2 1.5 R i = 1 0 k i2 Rl 0.65i8;is •	OCR Scan	PDF	1987M 1NBA resistor PT-200
c38 transistor Abstract: 2160 transistor Johanson Piston Trimmer Text: ERICSSON ^ PTB 20235 70 Watts, 2.1-2.2 GHz Wideband CDMA Power Transistor Description The 20235 is a class AB, NPN, push-pull RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 70 watts PEP minimum output power, it is specifically intended for operation as a	OCR Scan	PDF	BATC100) c38 transistor 2160 transistor Johanson Piston Trimmer
L450A Abstract: NPN transistor 5 watts Ericsson RF POWER TRANSISTOR Text: ERICSSON ^ PTE 20231 * 18 Watts, 2.1-2.2 GHz Cellular Radio RF Power Transistor Description The 20231 isaclassA/AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Bated at 18 watts minimum output power in class AB and 8 watts minimum output power	OCR Scan	PDF	G-200. BCP56 L450A NPN transistor 5 watts Ericsson RF POWER TRANSISTOR
RF NPN POWER TRANSISTOR C 10-12 GHZ Abstract: No abstract text available Text: ERICSSON ^ PTB 20245 35 Watts, 2.1-2.2 GHz PCN/PCS Power Transistor Description The 20245 is a class AB, NPN com mon em itter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz frequency band. Rated at 35 watts minim um output power for PEP applications, it is	OCR Scan	PDF	ATC-100 G-200 BCP56 RF NPN POWER TRANSISTOR C 10-12 GHZ

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TRANSISTOR 2120 Search Results

TRANSISTOR 2120 Result Highlights (5)

TRANSISTOR 2120 Datasheets Context Search

Carlo Gavazzi G2120

transistor 625

MRA936

T6661

Untitled

Untitled

c5750x7s2a106m

Untitled

Untitled

Untitled

Untitled

Untitled

D260-4118-0000

pm2222a

package 20223

Johanson Piston Trimmer

PTB 20245

Johanson Piston Trimmer

2sb504

itt 3906

1NBA

c38 transistor

L450A

RF NPN POWER TRANSISTOR C 10-12 GHZ