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    TRANSISTOR 1T Search Results

    TRANSISTOR 1T Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 1T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1030mhz

    Abstract: 2TD12 HV400 SM200 1090mhz
    Text: HVV1011-040 HVV1214-075 L-Band Avionics Pulsed Power Transistor HVV1011-040 The innovative Semiconductor Company! HVV1011-040 L-Band Radar Pulsed Power Transistor 1030-1090MHz, 50!s Pulse, 5% Transistor Duty L-Band Avionics Pulsed Power L-Band Avionics Pulsed


    Original     		PDF HVV1011-040 HVV1214-075 HVV1011-040 1030-1090MHz, HVV1011-035 1030mhz 2TD12 HV400 SM200 1090mhz

    Untitled

    Abstract: No abstract text available
    Text: BLP15M7160P Power LDMOS transistor Rev. 2 — 10 June 2014 Product data sheet 1. Product profile 1.1 General description A 160W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The


    Original     		PDF BLP15M7160P

    Untitled

    Abstract: No abstract text available
    Text: BLP15M7160P Power LDMOS transistor Rev. 1 — 10 January 2014 Objective data sheet 1. Product profile 1.1 General description A 160W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The


    Original     		PDF BLP15M7160P

    Untitled

    Abstract: No abstract text available
    Text: BLF642 Broadband power LDMOS transistor Rev. 2 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent


    Original     		PDF BLF642

    Untitled

    Abstract: No abstract text available
    Text: BLF644P Broadband power LDMOS transistor Rev. 2 — 27 June 2014 Product data sheet 1. Product profile 1.1 General description A 70 W LDMOS RF power transistor for broadcast transmitter, communications and industrial applications. The transistor is suitable for the frequency range HF to 1300 MHz.


    Original     		PDF BLF644P

    Untitled

    Abstract: No abstract text available
    Text: BLF647PS Broadband power LDMOS transistor Rev. 2 — 18 November 2013 Product data sheet 1. Product profile 1.1 General description A 200 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The


    Original     		PDF BLF647PS

    C570X7R1H106KT000N

    Abstract: 771-BLF642112 SOT467 Technical Specifications of DVB-T2 Transmitter DVB-T2 blf642,112 blf642 C570x
    Text: BLF642 Broadband power LDMOS transistor Rev. 2 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent


    Original     		PDF BLF642 771-BLF642112 BLF642 C570X7R1H106KT000N SOT467 Technical Specifications of DVB-T2 Transmitter DVB-T2 blf642,112 C570x

    blf642

    Abstract: rogers 5880
    Text: BLF642 Broadband power LDMOS transistor Rev. 2 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent


    Original     		PDF BLF642 blf642 rogers 5880

    UT-090C-25

    Abstract: BLF647P 130005 power transistor
    Text: BLF647P Broadband power LDMOS transistor Rev. 2 — 12 April 2013 Product data sheet 1. Product profile 1.1 General description A 200 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The


    Original     		PDF BLF647P UT-090C-25 BLF647P 130005 power transistor

    BLF642

    Abstract: SOT-46 RF transmitter nxp
    Text: BLF642 Broadband power LDMOS transistor Rev. 1 — 8 March 2011 Objective data sheet 1. Product profile 1.1 General description A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent


    Original     		PDF BLF642 BLF642 SOT-46 RF transmitter nxp

    Untitled

    Abstract: No abstract text available
    Text: BLF645 Broadband power LDMOS transistor Rev. 01 — 27 January 2010 Product data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The


    Original     		PDF BLF645 BLF645

    BLF645

    Abstract: C4532X7R1E475MT020U RF35
    Text: BLF645 Broadband power LDMOS transistor Rev. 01 — 27 January 2010 Product data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The


    Original     		PDF BLF645 BLF645 C4532X7R1E475MT020U RF35

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b'lE D bbS3T31 DD3D7DD 1Tb BIAPX Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF bbS3T31 O220AB BUK457-400B

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR MODULE Q CA75AA120 UL;E76102 M QCA75AA1 2 0 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated


    OCR Scan     		PDF CA75AA120 E76102 QCA75AA1 -10sec

    transistor r06

    Abstract: MEL709
    Text: CRÛ 1T1UJU / W NPN SILICON PHOTO TRANSISTOR DESCRIPTION MEL709 is NPN silicon photo-transistor with external base connection and built in a standard T-l 3/4 5mm water clear package. This device is suitable for use in a light sensor of the industrial control


    OCR Scan     		PDF MEL709 100uA MEL709-A of2854Â 6S477 Nov-99 transistor r06

    2SC2352

    Abstract: z239
    Text: NEC SILICON TRANSISTOR BfCTRON OEVKE 2SC2352 VHF MIXER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS The 2SC2352 is an NPN silicon epitaxial transistor intended fo r use as a in millimeters inches V H F m ixer in a tun er o f a T V receiver.


    OCR Scan     		PDF 2SC2352 2SC2352 11-i-- z239

    transistor A4t 85

    Abstract: 3b5 transistor transistor A4t 45 transistor A4t
    Text: b5E D m VllDÔSb DQbSTBl 1T4 • PHIN PHILIPS INTERNATIONAL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 470 MHz communications band. Features: • multi-base structure and emitter-ballasting resistors for an optimum temperature profile


    OCR Scan     		PDF BLU30/12 OT-119) 711GfiEti transistor A4t 85 3b5 transistor transistor A4t 45 transistor A4t

    transistor marking T2

    Abstract: TRANSISTOR 436 SCHMITT-TRIGGER application BCV63 BCV64 BCV64B bcv64 SOT143 NPN PNP SOT-143 700 v power transistor
    Text: • ^53^31 GGEMSSM HAPX N AMER PHILIPS/DISCRETE BCV64 BCV64B b7E D SILICON PLANAR TRANSISTOR Double P N-P transistor in a plastic SOT-143 envelope. Intended fo r Schmitt-trigger applications. N-P-N complement is the BCV63. QUICK REFERENCE DATA transistor Collector-emitter voltage open base


    OCR Scan     		PDF BCV64 BCV64B OT-143 BCV63. DDEU55b transistor marking T2 TRANSISTOR 436 SCHMITT-TRIGGER application BCV63 BCV64B bcv64 SOT143 NPN PNP SOT-143 700 v power transistor

    BUK566-60A

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors PowerMOS transistor BUK566-60A Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope


    OCR Scan     		PDF BUK566-60A OT404 BUK566-60A

    BUK562-60A

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors PowerMOS transistor BUK562-60A Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for


    OCR Scan     		PDF BUK562-60A OT404 BUK562-60A

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK564-200A Logic level FET_ GENERAL DESCRIPTION QUICK REFERENCE DATA SYMBOL N-channel enhancement mode logic level fieid-effect power transistor in a


    OCR Scan     		PDF BUK564-200A BUK564-200A

    BCY67

    Abstract: HTI 2E 101S Q62702-C254
    Text: BCY67 PNP Transistor for low-noise AF pre-stages BCY 67 is an epitaxial PNP silicon planar transistor in a case 18 A 3 DIN 41 876 T O -18 . The collector is electrically connected to the case. The transistor has been designed for especially low-noise pre-stages as well as in


    OCR Scan     		PDF BCY67 BCY67 10ZkHz HTI 2E 101S Q62702-C254

    BLW95

    Abstract: neutralization push-pull PHILIPS 4312 amplifier IEC134 w896 SOT-121A
    Text: PHILIPS I N T ERNATIONAL bSE D • 711002b ÜObBHQB J 323 PHIN BLW95 H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-AB operated high power industrial and m ilita ry transm itting equipment in the h.f. band. The transistor presents excellent performance as a


    OCR Scan     		PDF 00b3403 BLW95 711002b 00b3411 7Z77903 7Z77902 BLW95 neutralization push-pull PHILIPS 4312 amplifier IEC134 w896 SOT-121A