NPT35015
Abstract: NPT35015D r04350 12061C103KAT2A EAR99 JESD22-A114 JESD22-A115 j146 NPT35015DT
Text: NPT35015 Datasheet Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3000 - 6000MHz • 18W P3dB CW Power
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NPT35015
6000MHz
EAR99
NDS-005
NPT35015D
r04350
12061C103KAT2A
JESD22-A114
JESD22-A115
j146
NPT35015DT
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Untitled
Abstract: No abstract text available
Text: NPT35015 Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3300 - 3800 MHz • 18W P3dB CW Power • 25W P3dB peak envelope power
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NPT35015
EAR99
NDS-005
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Untitled
Abstract: No abstract text available
Text: NPT35015 Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3300 - 3800 MHz • 18W P3dB CW Power • 25W P3dB peak envelope power
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NPT35015
EAR99
NDS-005
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Untitled
Abstract: No abstract text available
Text: T2G6001528-Q3 18W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features
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T2G6001528-Q3
T2G6001528-Q3
TQGaN25
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18w transistor
Abstract: No abstract text available
Text: T2G6001528-Q3 18W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features
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T2G6001528-Q3
T2G6001528-Q3
TQGaN25
18w transistor
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S2-1111
Abstract: No abstract text available
Text: PD57018-E PD57018S-E RF POWER transistor, LdmoST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 18W with 16.5dB gain @ 945MHz /28V ■ New RF plastic package
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PD57018-E
PD57018S-E
945MHz
PowerSO-10RF
PD57018
PowerSO-10RF.
S2-1111
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2SC2782A
Abstract: 2SC2782 NPN 2SC2782 transistor 2sc2782
Text: 2SC2782A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782A VHF BAND POWER AMPLIFIER APPLICATIONS Unit in mm z Output Power : Po = 80W Min. (f = 175MHz, VCC = 12.5V, Pi = 18W) ABSOLUTE MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING
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2SC2782A
175MHz,
2SC2782A
2SC2782
NPN 2SC2782
transistor 2sc2782
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Untitled
Abstract: No abstract text available
Text: T2G6001528-Q3 18W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features
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T2G6001528-Q3
T2G6001528-Q3
TQGaN25
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NPN 2SC2782
Abstract: transistor 2sc2782 2SC2782
Text: 2SC2782 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS Unit in mm Output Power : Po = 80W Min. (f = 175MHz, VCC = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage
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2SC2782
175MHz,
2-13C1A
000707EAA1
175MHz
NPN 2SC2782
transistor 2sc2782
2SC2782
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S2-1111
Abstract: No abstract text available
Text: PD57018-E PD57018S-E RF POWER transistor, LdmoST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 18W with 16.5dB gain @ 945MHz /28V ■ New RF plastic package
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PD57018-E
PD57018S-E
945MHz
PowerSO-10RF
PD57018
PowerSO-10RF.
S2-1111
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Untitled
Abstract: No abstract text available
Text: 2SC2782A TOSHIBA Transistor Silicon Npn Epitaxial Planar Type 2SC2782A VHF Band Power Amplifier Applications Unit in mm z Output Power : Po = 80W Min. (f = 175MHz, VCC = 12.5V, Pi = 18W) Absolute Maximum Ratings (Tc = 25°C) CHARACTERISTIC SYMBOL RATING
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2SC2782A
175MHz,
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NPN 2SC2782
Abstract: transistor 2sc2782
Text: 2SC2782A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782A VHF BAND POWER AMPLIFIER APPLICATIONS Unit in mm z Output Power : Po = 80W Min. (f = 175MHz, VCC = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage
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2SC2782A
175MHz,
2-13C1A
2SC2782
NPN 2SC2782
transistor 2sc2782
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NPN 2SC2782
Abstract: No abstract text available
Text: 2SC2782A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782A VHF BAND POWER AMPLIFIER APPLICATIONS Unit in mm z Output Power : Po = 80W Min. (f = 175MHz, VCC = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage
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2SC2782A
175MHz,
2-13C1A
2SC2782
NPN 2SC2782
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2SC2782
Abstract: NPN 2SC2782 transistor 2sc2782
Text: 2SC2782 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS Unit in mm l Output Power : Po = 80W Min. (f = 175MHz, VCC = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage
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2SC2782
175MHz,
2-13C1A
000707EAA1
175MHz
2SC2782
NPN 2SC2782
transistor 2sc2782
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omron plc CQM1H CPU 51 configuration
Abstract: CQM1-ID212 OMRON CQM1H-CPU51 OMRON CQM1 programming manual OMRON CQM1H-CPU11 OMRON plc programming console manual CQM1H-CPU51 programming manual CQM1-PA206 omron Communication cables pin diagram OMRON plc programming console manual cqm1h-cpu51
Text: PRODUCT OVERVIEW CQM1H Programmable Controller Features The CQM1H series programmable controller offers advanced flexibility, powerful communication options, and has features traditionally found only in full rack PLC systems. The CQM1H’s rack-less modular design allows the
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CQM1-PRO01-E
C200H-PRO27-E
C200H-CN222
C200H-CN422
CS1W-CN114
WS02-CXPC1-EV1
1-800-55-OMRON
W363-E1-1
W365-E1-1
W364-E1-1
omron plc CQM1H CPU 51 configuration
CQM1-ID212
OMRON CQM1H-CPU51
OMRON CQM1 programming manual
OMRON CQM1H-CPU11
OMRON plc programming console manual
CQM1H-CPU51 programming manual
CQM1-PA206
omron Communication cables pin diagram
OMRON plc programming console manual cqm1h-cpu51
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Untitled
Abstract: No abstract text available
Text: <Silicon RF Power Modules > RA18H1213G RoHS Compliance , 1.24-1.30GHz 18W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA18H1213G is a 18-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 1.24- to 1.30-GHz range. The battery can be connected directly to the drain of the
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RA18H1213G
30GHz
RA18H1213G
18-watt
30-GHz
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RA18H1213G-101
Abstract: No abstract text available
Text: <Silicon RF Power Modules > RA18H1213G RoHS Compliance , 1.24-1.30GHz 18W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA18H1213G is a 18-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 1.24- to 1.30-GHz range. The battery can be connected directly to the drain of the
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RA18H1213G
RA18H1213G
18-watt
30-GHz
RA18H1213G-101
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transistor marking code 18W
Abstract: RA18H1213G RA18H1213G-101 f1270 Transistor 18W on
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA18H1213G RoHS Compliance , 1.24-1.30GHz 18W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA18H1213G is a 18-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 1.24- to
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RA18H1213G
30GHz
RA18H1213G
18-watt
30-GHz
transistor marking code 18W
RA18H1213G-101
f1270
Transistor 18W on
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omron plc CQM1H CPU 51 configuration
Abstract: OMRON CQM1H-CPU51 CQM1H-CPU51 programming manual OMRON CQM1 programming manual CQM1-ID212 OMRON CQM1H-CPU11 Omron CQM1H SUPPORT SOFTWARE OMRON plc programming console manual cqm1h-cpu51 CQM1-TC001 Omron CQM1H-CPU21
Text: PRODUCT OVERVIEW CQM1H Programmable Controller Features The CQM1H series programmable controller offers advanced flexibility, powerful communication options, and has features traditionally found only in full rack PLC systems. The CQM1H’s rack-less modular design allows the
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CQM1-PRO01-E
C200H-PRO27-E
C200H-CN222
C200H-CN422
CS1W-CN114
WS02-CXPC1-EV1
1-800-55-OMRON
W363-E1-1
W365-E1-1
W364-E1-1
omron plc CQM1H CPU 51 configuration
OMRON CQM1H-CPU51
CQM1H-CPU51 programming manual
OMRON CQM1 programming manual
CQM1-ID212
OMRON CQM1H-CPU11
Omron CQM1H SUPPORT SOFTWARE
OMRON plc programming console manual cqm1h-cpu51
CQM1-TC001
Omron CQM1H-CPU21
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33PFX4
Abstract: 2SC2782 NPN 2SC2782 transistor 2sc2782 18W 12 transistor 1BW TRANSISTOR 10ID 10A ferrite bead 132pF 156pF
Text: TO SHIBA 2SC2782 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS • Unit in mm Output Power : Po = 80W Min. (f= 175MHz, V e e = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING
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2SC2782
175MHz,
2-13C1A
961001EAA2'
33PFX4
2SC2782
NPN 2SC2782
transistor 2sc2782
18W 12 transistor
1BW TRANSISTOR
10ID
10A ferrite bead
132pF
156pF
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transistor 2sc2782
Abstract: NPN 2SC2782
Text: TOSHIBA 2SC2782 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS. U nit in mm ia 4 ± a 5 O utput Power : Po = 80W Min. (f = 175MHz, V c c = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL
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2SC2782
175MHz,
2-13C1A
961001EAA2'
transistor 2sc2782
NPN 2SC2782
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SC2782 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C2 78 2 VHF BAND POWER AMPLIFIER APPLICATIONS • U n it in mm 1 8 .4 ± Q 5 Output Power : Po = 80W Min. (f= 175MHz, VCC = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC
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2SC2782
175MHz,
961001EAA2'
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2SC1945
Abstract: 2SC1945 Transistor
Text: MITSUBISHI RF POWER TRANSISTOR 2SC1945 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1945 is a silicon NPN epitaxial planar type transistor designed for R F power amplifiers on HF band mobile radio applications. 9.1 ± 0 . 7 FEATURES « S 3 .6 ± 0 .2
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2SC1945
2SC1945
27MHz
O-220
27MHz.
2SC1945 Transistor
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TRANSISTOR 2sC1945
Abstract: 2sc1945 2sC1945 NPN ABE 710
Text: MITSUBISHI RF POWER TRANSISTOR 2SC1945 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1945 is a silicon NPN epitaxial planar type transistor designed for R F power amplifiers on HF band mobile radio applications. 9.1 ± 0 . 7 FEATURES D im ensions in mm
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2SC1945
2SC1945
27MHz
T0-220
27MHz.
TRANSISTOR 2sC1945
2sC1945 NPN
ABE 710
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