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    TRANSISTOR 164 MOTOROLA Search Results

    TRANSISTOR 164 MOTOROLA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 164 MOTOROLA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MRF861

    Abstract: transistor 470
    Text: MOTOROLA Order this document by MRF861/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF861 Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the


    Original     		PDF MRF861/D MRF861 MRF861/D* MRF861 transistor 470

    358E-06

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF858S NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800 – 960 MHz.


    Original     		PDF MRF858S MRF858S 358E-06

    MRF858S

    Abstract: ic 0941 358E-06 ic 319A transistor motorola 351 BD136 MMBT2222ALT1 250UF
    Text: MOTOROLA Order this document by MRF858S/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF858S NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the


    Original     		PDF MRF858S/D MRF858S MRF858S ic 0941 358E-06 ic 319A transistor motorola 351 BD136 MMBT2222ALT1 250UF

    MRF5811LT1

    Abstract: MRF5811L 742 792 07 742 792 71 Transistor motorola 418 742 792 116 NF50 TUNER 0436 HP11590B
    Text: MOTOROLA Order this document by MRF5811LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF5811LT1 NPN Silicon High-Frequency Transistor • • • • • • • • Designed for high current, low power amplifiers up to 1.0 GHz. Low Noise 2.0 dB @ 500 MHz


    Original     		PDF MRF5811LT1/D MRF5811LT1 MRF5811LT1/D* MRF5811LT1 MRF5811L 742 792 07 742 792 71 Transistor motorola 418 742 792 116 NF50 TUNER 0436 HP11590B

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA MRF858S NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800–960 MHz. CLASS A 800–960 MHz 3.6 W CW , 24 V


    Original     		PDF MRF858S/D MRF858S

    BD136

    Abstract: MMBT2222ALT1 MRF858S
    Text: MOTOROLA Order this document by MRF858S/D SEMICONDUCTOR TECHNICAL DATA MRF858S NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the


    Original     		PDF MRF858S/D MRF858S BD136 MMBT2222ALT1 MRF858S

    MRF858S

    Abstract: transistor C14 BD136 MMBT2222ALT1 358E-06 motorola to-59
    Text: MOTOROLA Order this document by MRF858S/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF858S NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the


    Original     		PDF MRF858S/D MRF858S MRF858S transistor C14 BD136 MMBT2222ALT1 358E-06 motorola to-59

    MRF5811

    Abstract: MRF5811L TRANSISTOR SF 128 HP11590B HP11590
    Text: MOTOROLA Order this document by MRF5811LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF5811LT1 NPN Silicon High-Frequency Transistor • • • • • • • • Designed for high current, low power amplifiers up to 1.0 GHz. Low Noise 2.0 dB @ 500 MHz


    Original     		PDF MRF5811LT1/D MRF5811LT1 MRF5811LT1 MRF5811LT1/D MRF5811 MRF5811L TRANSISTOR SF 128 HP11590B HP11590

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor MRF166W N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages to 30 – 500 MHz. • Push–Pull Configuration Reduces Even Numbered Harmonics


    Original     		PDF MRF166W

    transistor motorola 351

    Abstract: BD136 MMBT2222ALT1 MRF858 MRF858S PG1112 898E-03
    Text: MOTOROLA Order this document by MRF858/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF858 MRF858S NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the


    Original     		PDF MRF858/D MRF858 MRF858S MRF858 MRF858/D* transistor motorola 351 BD136 MMBT2222ALT1 MRF858S PG1112 898E-03

    motorola L6

    Abstract: linear amplifier 470-860 TPV7025
    Text: MOTOROLA Order this document by TPV7025/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Linear Power Transistor TPV7025 . . . designed for output stages in Band IV & V TV transmitter amplifiers. Internal matching of both input and output along with use of a push–pull package


    Original     		PDF TPV7025/D TPV7025 TPV7025/D* motorola L6 linear amplifier 470-860 TPV7025

    RF power amplifier 49 MHz

    Abstract: No abstract text available
    Text: MOTOROLA The RF MOSFET Line Power Field Effect Transistor MRF166W N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages to 30 – 500 MHz. • Push–Pull Configuration Reduces Even Numbered Harmonics


    Original     		PDF MRF166W/D MRF166W MRF166W/D RF power amplifier 49 MHz

    transistor motorola 114-8

    Abstract: MRF861 2n2222 npn transistor motorola s 114-8 2N2222 SOA power transistor 2n2222 motorola 114-8
    Text: Order this data sheet by MRF861/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF861 NPN Silicon RF Power Transistor M otorola Preferred Device CLASS A 800-960 MHz 27 W CW , 24 V NPN SILICON RF POWER TRANSISTOR Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier


    OCR Scan     		PDF MRF861/D 2PHX33727Q-0 transistor motorola 114-8 MRF861 2n2222 npn transistor motorola s 114-8 2N2222 SOA power transistor 2n2222 motorola 114-8

    zt156

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TPV7025 The RF Line UHF Linear Power Transistor . . . designed for output stages in Band IV & V TV transmitter amplifiers. Internal matching of both input and output along with use of a push-pull package configuration aids broadband amplifier designs.


    OCR Scan     		PDF TPV7025 TPV7025 zt156

    960SN

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF858 MRF858S NPN Silicon RF Pow er Transistor Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800-960 MHz.


    OCR Scan     		PDF MRF858 MRF858S MRF858S 960SN

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF858 MRF858S NPN Silicon RF Pow er Transistor Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 80 0 -9 6 0 MHz.


    OCR Scan     		PDF MRF858 MRF858S

    MRF162

    Abstract: S21171 triode FU 33 MOTOROLA TRANSISTOR 712
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F162 The RF MOSFET Line RF P o w er Field E ffe c t Transistor N-Channel Enhancement-Mode . . . designed for wideband large-signal output and driver applications up to 400 MHz range. • Guaranteed 28 Volt, 400 MHz Performance


    OCR Scan     		PDF MRF162, MRF162 AN215A RF162 S21171 triode FU 33 MOTOROLA TRANSISTOR 712

    ATIC 59 C1

    Abstract: 301Ah transistor bd136 mrf857s 03Af
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor Designed for 24 Volt U H F large-signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 8 0 0 -9 6 0 MHz.


    OCR Scan     		PDF F857S MRF857S ATIC 59 C1 301Ah transistor bd136 03Af

    MRF857S

    Abstract: transistor bd136 MRF857S equivalent 305D-01
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt U H F large-signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 8 0 0 -9 6 0 MHz.


    OCR Scan     		PDF 305D-01, MRF857S transistor bd136 MRF857S equivalent 305D-01

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF587 The RF Line NPN Silicon High-Frequency Transistor . . . designed for use in high-gain, low-noise, ultra-linear, tuned and wideband amplifiers. Ideal for use in CATV, MÄTV, and instrumentation applications. •


    OCR Scan     		PDF MRF587 CT050 45004B MRF587

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Linear Power Transistor . . . designed for output stages in Band IV & V TV transm itter amplifiers. Internal m atching of both input and output along with use of a p u s h -p u ll package configuration aids broadband am plifier designs.


    OCR Scan     		PDF Junc03 TPV7025

    bd135 equivalent

    Abstract: RF NPN POWER TRANSISTOR 2 WATT 2 GHZ rohm mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ Arlon mallory 170 bd136 equivalent mrf2006
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line RF Pow er Bipolar Transistors M RF20060 M RF20060S The MRF20060 and MRF20060S are designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high


    OCR Scan     		PDF MRF20060 MRF20060S Impedanc159 IS22I bd135 equivalent RF NPN POWER TRANSISTOR 2 WATT 2 GHZ rohm mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ Arlon mallory 170 bd136 equivalent mrf2006

    10 watt power transistor bd

    Abstract: BD 166, 168, 170
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD165 BD169 Plastic Medium Power Silicon NPN Transistor 1.5 AMPERE POWER TRANSISTORS NPN SILICON 45, 60,80 VOLTS 20 WATTS . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.


    OCR Scan     		PDF BD165 BD169 10 watt power transistor bd BD 166, 168, 170

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF5811LT1 NPN S ilicon H igh-Frequency Transistor • • • • • • • • Designed for high current, low power amplifiers up to 1.0 GHz. Low Noise 2.0 dB @ 500 MHz Low Intermodulation Distortion


    OCR Scan     		PDF MRF5811LT1 18A-05, OT-143) MRF5811LT1