MMBT2222A
Abstract: PMBT2907A
Text: DISCRETE SEMICONDUCTORS DATA SHEET MMBT2222A NPN switching transistor Product specification Supersedes data of 2000 Apr 11 2004 Jan 16 Philips Semiconductors Product specification NPN switching transistor MMBT2222A FEATURES PINNING • High current max. 600 mA
|
Original
|
MMBT2222A
PMBT2907A.
MAM255
SCA76
R75/02/pp7
MMBT2222A
PMBT2907A
|
PDF
|
7E SOT23 NXP
Abstract: 771-MMBTA92215 MAM256
Text: DISCRETE SEMICONDUCTORS DATA SHEET MMBTA92 PNP high-voltage transistor Product specification Supersedes data of 2000 Apr 11 2004 Jan 16 Philips Semiconductors Product specification PNP high-voltage transistor MMBTA92 FEATURES PINNING • Low current max. 100 mA
|
Original
|
MMBTA92
MMBTA42.
MMBTA92
SCA76
R75/02/pp6
771-MMBTA92215
7E SOT23 NXP
MAM256
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT MMBTA92 PNP high-voltage transistor Product specification Supersedes data of 2000 Apr 11 2004 Jan 16 Philips Semiconductors Product specification PNP high-voltage transistor MMBTA92 PINNING FEATURES • Low current max. 100 mA
|
Original
|
MMBTA92
MMBTA42.
MAM256
SCA76
R75/02/pp6
|
PDF
|
transistor marking zg
Abstract: PBSS4320T PBSS5320T
Text: DISCRETE SEMICONDUCTORS DATA SHEET PBSS4320T 20 V NPN low VCEsat transistor Product specification Supersedes data of 2002 Aug 08 2004 Mar 18 Philips Semiconductors Product specification 20 V NPN low VCEsat transistor PBSS4320T QUICK REFERENCE DATA FEATURES
|
Original
|
PBSS4320T
SCA76
R75/02/pp10
transistor marking zg
PBSS4320T
PBSS5320T
|
PDF
|
PBSS5140T
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET PBSS5140T 40 V low VCEsat PNP transistor Product specification Supersedes data of 2001 Jul 20 2004 Jan 07 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5140T QUICK REFERENCE DATA FEATURES
|
Original
|
PBSS5140T
SCA76
R75/03/pp9
PBSS5140T
|
PDF
|
MMBTA42
Abstract: MMBTA92 transistor marking code 7e IBM type 1
Text: DISCRETE SEMICONDUCTORS DATA SHEET MMBTA92 PNP high-voltage transistor Product specification Supersedes data of 2000 Apr 11 2004 Jan 16 Philips Semiconductors Product specification PNP high-voltage transistor MMBTA92 FEATURES PINNING • Low current max. 100 mA
|
Original
|
MMBTA92
MMBTA42.
MAM256
SCA76
R75/02/pp6
MMBTA42
MMBTA92
transistor marking code 7e
IBM type 1
|
PDF
|
MMBT2222A
Abstract: PMBT2907A transistor mmbt2222a
Text: DISCRETE SEMICONDUCTORS DATA SHEET MMBT2222A NPN switching transistor Product data sheet Supersedes data of 2000 Apr 11 2004 Jan 16 NXP Semiconductors Product data sheet NPN switching transistor MMBT2222A FEATURES PINNING • High current max. 600 mA PIN
|
Original
|
MMBT2222A
PMBT2907A.
MAM255
R75/02/pp7
MMBT2222A
PMBT2907A
transistor mmbt2222a
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TRANSISTOR MODULE SQD400AA100 SQD400AA10 0 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from Semiconductor elements for
|
OCR Scan
|
SQD400AA100
SQD400AA10
-400A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TRANSISTOR MODULES- SQQ300BA60 U L;E 76102 M ) is a Darlington power transistor module with a , high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode (trr: 200ns). The mounting base of the module is electrically isolated
|
OCR Scan
|
SQQ300BA60
200ns)
hrEfe750
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TRANSISTOR MODULE SOD300A40/6Q UL;E76102 M SQD300A is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for
|
OCR Scan
|
OD300A40/6Q
E76102
SQD300A
400/600V
--A40
0Q02B06
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TRANSISTOR MODULE SQP200A40/60 UL;E76102 M S Q D 2 0 0 A is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for
|
OCR Scan
|
SQP200A40/60
E76102
400/600V
CI022aS
SQD200A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TRANSISTOR MODULE SQP400AA120 S Q D 4 0 0 A A 1 2 0 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from Semiconductor elements for
|
OCR Scan
|
SQP400AA120
a400A
00020m
SQD400AA120
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TRANSISTOR MODULE SQD300AA120 UL;E 76102 M S Q D 3 0 0 A A 1 2 0 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for
|
OCR Scan
|
SQD300AA120
DDD2213
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TRANSISTOR MODULE SQD400BA60 UL;E76102 M S Q D 4 0 0 B A 6 0 is a Darlington power transistor module with a U LTR A HIGH h F E , high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode (trr: 2 0 0 n s ). The mounting base of the module is electrically isolated
|
OCR Scan
|
SQD400BA60
E76102
7TU243
|
PDF
|
|
|
2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
|
OCR Scan
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TRANSISTOR MODULE QCA200A40/60 Q C A 2 00 A is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semicon
|
OCR Scan
|
QCA200A40/60
400/600V
QCA200A
|
PDF
|
BUX37
Abstract: transistor da 307 dg173 TO-204AA transistor
Text: G E SOLI» STATE DI 3875081 G E “SOLID STATE _ File N um b er ' ’ D eT| 3û750fll 00173DS 4 '01E 17305 D T * 3 ^"2.^ Darlington Power Transistor# 1243 BUX37 15-Ampere N-P-N Monolithic Darlington Power Transistor « TERMINAL DESIGNATIONS 400 V , 35 W
|
OCR Scan
|
DG173DS
BUX37
15-Ampere
O-204AA
RCA-BUX37
O-204AA
50fll
DD17307
BUX37
transistor da 307
dg173
TO-204AA transistor
|
PDF
|
d 2539 transistor
Abstract: QCA50AA120
Text: TRANSISTOR MODULE QCA50ÄA120 UL;E76102 M Q C A 5 0 A A 1 2 0 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. T he mounting base of the module is electrically isolated
|
OCR Scan
|
QCA5QAA120
QCA50AA1
E76102
d 2539 transistor
QCA50AA120
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TRANSISTOR MODULE QCA200AA100 UL;E76102 M Q C A 2 0 0 A A 1 0 0 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated
|
OCR Scan
|
QCA200AA100
E76102
QDQ2Q12
|
PDF
|
sqd35J
Abstract: No abstract text available
Text: TRANSISTOR M O D U LE < non -IS O L A T E D TYPE SQD35JA140/160 S Q D 3 5 J A is a high speed, high power Darlington transistor designed for Resonance circuit. The transistor has a reverse paralleled fast recovery diode. • Vcbo= 1600V MAX, lc = 35A For AC200V Line)
|
OCR Scan
|
SQD35JA140/160
AC200V
SQD35JA140
SQD35JA160
SQD35JA
sqd35J
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TRANSISTOR MODULES QCA75BA60 UL;E76102 M) Q C A 7 5 B A 6 0 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE. high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode ( t r r : 2 0 0 n s ). The mounting base of the module
|
OCR Scan
|
QCA75BA60
E76102
Rati300V
150mA
DDDS17R
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TRANSISTOR MODULE Q C A 150A A 120 U L;E 76102 M QCA1 5 0 A A 1 2 0 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated
|
OCR Scan
|
|
PDF
|
QF20AA60
Abstract: QF20AA40 SANREX QF20AA60
Text: TRANSISTOR M O D U L E t h r e e p h a s e s b r id g e t y p e QF20AA40/60 Q F 2 0 A A is a six pack Darlington power transistor module which has six transistors connected in three phase bridge configuration. Each transistor has a reverse paralleled fast recovery diode. The
|
OCR Scan
|
QF20AA40/60
QF20AA
400/600V
7niS43
QF20AA60
QF20AA40
SANREX QF20AA60
|
PDF
|
2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
|
OCR Scan
|
2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
|
PDF
|
