Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR 1240 Search Results

    TRANSISTOR 1240 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 1240 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    T491D476M020AS

    Abstract: TRANSISTOR SMD 2X K transistor j127 BLA0912-250 T491D226M020AS
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLA0912-250 Avionics LDMOS transistor Preliminary specification 2003 Oct 24 Philips Semiconductors Preliminary specification Avionics LDMOS transistor BLA0912-250 PINNING - SOT502A FEATURES • High power gain


    Original     		PDF M3D379 BLA0912-250 OT502A SCA74 613524/06/pp11 T491D476M020AS TRANSISTOR SMD 2X K transistor j127 BLA0912-250 T491D226M020AS

    NP48N055CHE

    Abstract: MP25 transistor MP-25 NP48N055DHE NP48N055EHE
    Text: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR NP48N055CHE, NP48N055DHE, NP48N055EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching


    Original     		PDF NP48N055CHE, NP48N055DHE, NP48N055EHE O-262 MP-25 O-220AB MP-25) NP48N055DHE NP48N055CHE NP48N055CHE MP25 transistor NP48N055DHE NP48N055EHE

    BCX17

    Abstract: BCX19
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BCX19 NPN general purpose transistor Product specification Supersedes data of 2000 Jul 28 2004 Jan 16 Philips Semiconductors Product specification NPN general purpose transistor BCX19 FEATURES PINNING • High current 500 mA


    Original     		PDF BCX19 BCX17. MAM255 SCA76 R75/05/pp6 BCX17 BCX19

    BCX19

    Abstract: BCX17 BCX19 NXP
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BCX19 NPN general purpose transistor Product data sheet Supersedes data of 2000 Jul 28 2004 Jan 16 NXP Semiconductors Product data sheet NPN general purpose transistor BCX19 FEATURES PINNING • High current 500 mA PIN


    Original     		PDF BCX19 BCX17. MAM255 R75/05/pp6 BCX19 BCX17 BCX19 NXP

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BCX19 NPN general purpose transistor Product data sheet Supersedes data of 2000 Jul 28 2004 Jan 16 NXP Semiconductors Product data sheet NPN general purpose transistor BCX19 PINNING FEATURES • High current 500 mA PIN • Low voltage (45 V).


    Original     		PDF BCX19 BCX17. MAM255 R75/05/pp6

    BLF188XR NXP

    Abstract: blf188
    Text: BLF188XR; BLF188XRS Power LDMOS transistor Rev. 5 — 12 November 2013 Product data sheet 1. Product profile 1.1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Table 1.


    Original     		PDF BLF188XR; BLF188XRS BLF188XR BLF188XR NXP blf188

    Untitled

    Abstract: No abstract text available
    Text: BLA0912-250R Avionics LDMOS power transistor Rev. 2 — 15 October 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the


    Original     		PDF BLA0912-250R OT502A

    smd JH transistor

    Abstract: 250 B 340 smd Transistor T491D476M020AS BLA0912-250R J2 JH
    Text: BLA0912-250R Avionics LDMOS power transistor Rev. 3 — 1 December 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the


    Original     		PDF BLA0912-250R OT502A smd JH transistor 250 B 340 smd Transistor T491D476M020AS BLA0912-250R J2 JH

    250 B 340 smd Transistor

    Abstract: smd JH transistor BLA0912-250 T491D476M020AS
    Text: BLA0912-250 Avionics LDMOS transistor Rev. 3 — 26 November 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the


    Original     		PDF BLA0912-250 OT502A 103itions 250 B 340 smd Transistor smd JH transistor BLA0912-250 T491D476M020AS

    T491D226M020AS

    Abstract: T491D476M020AS smd JH transistor
    Text: BLA0912-250R Avionics LDMOS power transistor Rev. 01 — 3 March 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the


    Original     		PDF BLA0912-250R OT502A BLA0912-250R T491D226M020AS T491D476M020AS smd JH transistor

    Untitled

    Abstract: No abstract text available
    Text: BLA0912-250 Avionics LDMOS transistor Rev. 3 — 26 November 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the


    Original     		PDF BLA0912-250 OT502A

    Untitled

    Abstract: No abstract text available
    Text: BLA0912-250R Avionics LDMOS power transistor Rev. 3 — 1 December 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the


    Original     		PDF BLA0912-250R OT502A

    NV SMD TRANSISTOR

    Abstract: philips resistor TRANSISTOR L2 BLA0912-250 T491D226M020AS T491D476M020AS TANTALUM SMD CAPACITOR JTIDS smd transistor w1 gp3511
    Text: BLA0912-250 Avionics LDMOS transistor Rev. 02 — 22 July 2004 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the


    Original     		PDF BLA0912-250 OT502A NV SMD TRANSISTOR philips resistor TRANSISTOR L2 BLA0912-250 T491D226M020AS T491D476M020AS TANTALUM SMD CAPACITOR JTIDS smd transistor w1 gp3511

    2SC 8550

    Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
    Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4


    Original     		PDF 3SK309 3SK317 3SK318 BB101C BB102C BB301C BB302C BB304C BB305C BB501C 2SC 8550 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545

    transistor BC 339

    Abstract: transistor BC 336 BC190 bc 339 transistor BC 55 MC 340 transistor transistor bc 337 BC 170 transistor capacite 335
    Text: NPN ÇILICON TRANSISTOR TRANSISTOR NPN S ILIC IU M Switching and amplifier Available on A and B groups 64 V V CEO Commutation et amplification Utifisabfe pour les groupes A et B 200 mA 'c m i 125-260 A h21e 2 mA-5 V 1240-500 B Case TO-18 • See outline drawing ÇB-6 on last pages


    OCR Scan     		PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    transistor b 1238

    Abstract: fld pcb
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. The device features very low on-state resistance and has


    OCR Scan     		PDF BUK9840-55 OT223 OT223. transistor b 1238 fld pcb

    Untitled

    Abstract: No abstract text available
    Text: KD424520HB Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 H iQ h ~ B 6 tB Dual Darlington Transistor Module 200 Amperes/600 Volts Description: The Powerex High-Beta Dual Darlington Transistor Modules are high power devices designed for


    OCR Scan     		PDF KD424520HB Amperes/600 J4b21

    R1200

    Abstract: diode v3e
    Text: FF 50 R 12 KF Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte VcES Maximum rated values Ic Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 0 ,1 5 5 °C/W RthJC ° c / w DC, pro Zweig / per arm


    OCR Scan     		PDF 3403ES7 R1200 diode v3e

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: FF 50 R 12 KF Transistor Transistor Elektrische Eigenschaften Electrical properties VCES Maximum rated values 1200 V 50 A Ic Therm ische Eigenschaften Therm al properties Rthjc DC, pro B austein/p e r module 0,155 C/W ’C/W DC, pro Zweig / per arm 0,31 C/W


    OCR Scan     		PDF 3403ES7

    diode D83

    Abstract: 50m01 U300 KD424520HB d82 diode darlington 40A
    Text: fOMEREX KD424520HB Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 H i C f h mB O t B Dual Darlington Transistor Module 200 Amperes/600 Volts O U T L I N E DR A WI N G Description: The Powerex High-Beta Dual Darlington Transistor Modules are


    OCR Scan     		PDF KD424520HB Amperes/600 diode D83 50m01 U300 KD424520HB d82 diode darlington 40A