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    TRANSISTOR 03 SMD Search Results

    TRANSISTOR 03 SMD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 03 SMD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A1502

    Abstract: smd diode code GS Q67065-A7009 SMD CODE G13
    Text: Preliminary Data Sheet IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 2.7 mΩ ID


    Original     		PDF IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPB100N06S3L-03 IPI100N06S3L-03 PG-TO263-3-2 A1502 smd diode code GS Q67065-A7009 SMD CODE G13

    Q67042-S4057

    Abstract: SPB100N03S2-03 SPI100N03S2-03 SPP100N03S2-03 PN0303
    Text: Preliminary data SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 OptiMOSâ Power-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • 175°C operating temperature ID • Avalanche rated P-TO262-3-1 max. SMD version 30 V 3 mΩ


    Original     		PDF SPI100N03S2-03 SPP100N03S2-03 SPB100N03S2-03 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP100N03S2-03 Q67042-S4058 PN0303 Q67042-S4057 SPB100N03S2-03 SPI100N03S2-03 PN0303

    Q67042-S4057

    Abstract: ANPS071E SPB100N03S2-03 SPI100N03S2-03 SPP100N03S2-03 PN0303 Q67042-S4058
    Text: SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode RDS on max. SMD version 3 mΩ • Excellent Gate Charge x RDS(on) product (FOM) ID • Superior thermal resistance


    Original     		PDF SPI100N03S2-03 SPP100N03S2-03 SPB100N03S2-03 SPP100N03S2-03 Q67042-S4058 Q67042-S4057 PN0303 Q67042-S4116 Q67042-S4057 ANPS071E SPB100N03S2-03 SPI100N03S2-03 PN0303 Q67042-S4058

    2n0303

    Abstract: INFINEON PART MARKING SPB80N03S2-03 smd diode 2420 SMD MARKING CODE transistor SMD TRANSISTOR MARKING code TC transistor vds rds 12 id 80a to220 ANPS071E SPI80N03S2-03 SPP80N03S2-03
    Text: SPI80N03S2-03 SPP80N03S2-03,SPB80N03S2-03 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode RDS on max. SMD version 3.1 mΩ • Excellent Gate Charge x RDS(on) product (FOM) ID 80 A • Superior thermal resistance


    Original     		PDF SPI80N03S2-03 SPP80N03S2-03 SPB80N03S2-03 SPP80N03S2-03 Q67040-S4247 Q67040-S4258 2N0303 Q67042-S4079 2n0303 INFINEON PART MARKING SPB80N03S2-03 smd diode 2420 SMD MARKING CODE transistor SMD TRANSISTOR MARKING code TC transistor vds rds 12 id 80a to220 ANPS071E SPI80N03S2-03

    3PN0603

    Abstract: INFINEON smd PART MARKING ANPS071E BIPP100N06S3-03 IPB100N06S3-03 IPI100N06S3-03 IPP100N06S3-03
    Text: Target data sheet IPI100N06S3-03 IPP100N06S3-03,IPB100N06S3-03 OptiMOS-T Power-Transistor Product Summary Feature VDS • n-Channel RDS on • Enhancement mode ID • AEC Q101 qualified • Low On-Resistance RDS(on) max. SMD version P- TO262 -3-1 55 V


    Original     		PDF IPI100N06S3-03 IPP100N06S3-03 IPB100N06S3-03 IPP100N06S3-03 3PN0603 BIPP100N06S3-03, 3PN0603 INFINEON smd PART MARKING ANPS071E BIPP100N06S3-03 IPB100N06S3-03 IPI100N06S3-03

    Q67042-S4057

    Abstract: No abstract text available
    Text: SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 OptiMOS =Power-Transistor Product Summary Feature 30 VDS  N-Channel RDS on  Enhancement mode ID  Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance max. SMD version P- TO262 -3-1 V m


    Original     		PDF SPI100N03S2-03 SPP100N03S2-03 SPB100N03S2-03 SPB100N03S2-03 Q67042-S4058 Q67042-S4057 Q67042-S4116 PN0303

    3pn06l03

    Abstract: ANPS071E smd diode marking 78A 3pn06 INFINEON PART MARKING to263 K TRANSISTOR SMD MARKING CODE INFINEON smd PART MARKING OPTIMOS TRANSISTOR BIPP100N06S3L-03 INFINEON PART MARKING
    Text: Target data sheet IPI100N06S3L-03 IPP100N06S3L-03,IPB100N06S3L-03 OptiMOS-T Power-Transistor Feature • n-Channel • Enhancement mode • Logic Level • AEC Q101 qualified Product Summary VDS 55 V RDS on max. SMD version 2.7 mΩ ID 100 A P- TO262 -3-1


    Original     		PDF IPI100N06S3L-03 IPP100N06S3L-03 IPB100N06S3L-03 IPP100N06S3L-03 3PN06L03 BIPP100N06S3L-03, 3pn06l03 ANPS071E smd diode marking 78A 3pn06 INFINEON PART MARKING to263 K TRANSISTOR SMD MARKING CODE INFINEON smd PART MARKING OPTIMOS TRANSISTOR BIPP100N06S3L-03 INFINEON PART MARKING

    A SMD CODE MARKING

    Abstract: IPB100N06S3-03 IPI100N06S3-03 IPP100N06S3-03 PG-TO263-3-2 SP0000-87982 3pn06 3PN0603
    Text: IPB100N06S3-03 IPI100N06S3-03, IPP100N06S3-03 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 3.0 mΩ ID 100 A • MSL1 up to 260°C peak reflow


    Original     		PDF IPB100N06S3-03 IPI100N06S3-03, IPP100N06S3-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 EIA/JESD22-A114-B SP0000-87982 A SMD CODE MARKING IPB100N06S3-03 IPI100N06S3-03 IPP100N06S3-03 PG-TO263-3-2 SP0000-87982 3pn06 3PN0603

    4P04L03

    Abstract: IPP120P04P4L-03 IPB120P04P4L-03
    Text: IPB120P04P4L-03 IPI120P04P4L-03, IPP120P04P4L-03 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 3.1 mW ID -120 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB120P04P4L-03 IPI120P04P4L-03, IPP120P04P4L-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI120P04P4L-03 4P04L03 IPP120P04P4L-03

    3PN0403

    Abstract: IPB100N04S3-03 IPI100N04S3-03 IPP100N04S3-03 PG-TO263-3-2 GD 898
    Text: Preliminary Data Sheet IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3-03 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on (SMD Version) 3.0 mΩ ID 100 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1


    Original     		PDF IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3PN0403 IPI100N04S3-03 3PN0403 IPB100N04S3-03 IPI100N04S3-03 IPP100N04S3-03 PG-TO263-3-2 GD 898

    3pn06l03

    Abstract: 690 d80 IPB100N06S3L-03 IPI100N06S3L-03 IPP100N06S3L-03 PG-TO263-3-2 SP0000-87978 SMD CODE G13
    Text: IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 2.7 mΩ ID 100 A • MSL1 up to 260°C peak reflow


    Original     		PDF IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 EIA/JESD22-A114-B SP0000-87978 3pn06l03 690 d80 IPB100N06S3L-03 IPI100N06S3L-03 IPP100N06S3L-03 PG-TO263-3-2 SP0000-87978 SMD CODE G13

    3pn0403

    Abstract: IPB100N04S3-03 IPP100N04S3-03 IPI100N04S3-03 PG-TO263-3-2 Application Note ANPS071E
    Text: IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3-03 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on (SMD Version) 2.5 mΩ ID 100 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3PN0403 IPI100N04S3-03 3pn0403 IPB100N04S3-03 IPP100N04S3-03 IPI100N04S3-03 PG-TO263-3-2 Application Note ANPS071E

    3N0403

    Abstract: No abstract text available
    Text: Preliminary Data Sheet IPB80N04S3-03 IPI80N04S3-03, IPP80N04S3-03 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 3.2 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1


    Original     		PDF IPB80N04S3-03 IPI80N04S3-03, IPP80N04S3-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPB80N04S3-03 IPI80N04S3-03 3N0403

    PN03L03

    Abstract: Q67042-S4055 40h120 ANPS071E SPB100N03S2L-03 SPI100N03S2L-03 SPP100N03S2L-03 Q67042-S4056
    Text: SPI100N03S2L-03 SPP100N03S2L-03,SPB100N03S2L-03 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode RDS on max. SMD version 2.7 mΩ ID 100 A • Logic Level • Excellent Gate Charge x R DS(on) P- TO262 -3-1 P- TO263 -3-2


    Original     		PDF SPI100N03S2L-03 SPP100N03S2L-03 SPB100N03S2L-03 Q67042-S4056 SPB100N03S2L-03 Q67042-S4055 PN03L03 Q67042-S4094 PN03L03 Q67042-S4055 40h120 ANPS071E SPI100N03S2L-03 Q67042-S4056

    3pn06l03

    Abstract: ANPS071E IPB100N06S3L-03 IPI100N06S3L-03 IPP100N06S3L-03 PG-TO263-3-2 D1053
    Text: IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 2.7 mΩ ID 100 A Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified


    Original     		PDF IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3PN06L03 IPI100N06S3L-03 3pn06l03 ANPS071E IPB100N06S3L-03 IPI100N06S3L-03 IPP100N06S3L-03 PG-TO263-3-2 D1053

    3PN0603

    Abstract: ANPS071E IPB100N06S3-03 IPI100N06S3-03 IPP100N06S3-03 PG-TO263-3-2
    Text: IPB100N06S3-03 IPI100N06S3-03, IPP100N06S3-03 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 3.0 mΩ ID 100 A Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified


    Original     		PDF IPB100N06S3-03 IPI100N06S3-03, IPP100N06S3-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3PN0603 IPI100N06S3-03 3PN0603 ANPS071E IPB100N06S3-03 IPI100N06S3-03 IPP100N06S3-03 PG-TO263-3-2

    3N0403

    Abstract: IPB80N04S3-03 PG-TO263-3-2 ANPS071E IPI80N04S3-03 IPP80N04S3-03 J3205
    Text: IPB80N04S3-03 IPI80N04S3-03, IPP80N04S3-03 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 3.2 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB80N04S3-03 IPI80N04S3-03, IPP80N04S3-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N0403 IPI80N04S3-03 3N0403 IPB80N04S3-03 PG-TO263-3-2 ANPS071E IPI80N04S3-03 IPP80N04S3-03 J3205

    2n03l03

    Abstract: 2N03L SPB80N03S2L-03 ANPS071E SPI80N03S2L-03 SPP80N03S2L-03 INFINEON PART MARKING to263
    Text: SPI80N03S2L-03 SPP80N03S2L-03,SPB80N03S2L-03 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode RDS on max. SMD version 2.8 mΩ ID 80 A • Logic Level • Excellent Gate Charge x R DS(on) P- TO262 -3-1 P- TO263 -3-2


    Original     		PDF SPI80N03S2L-03 SPP80N03S2L-03 SPB80N03S2L-03 SPP80N03S2L-03 Q67040-S4248 Q67040-S4259 2N03L03 Q67042-S4078 2n03l03 2N03L SPB80N03S2L-03 ANPS071E SPI80N03S2L-03 INFINEON PART MARKING to263

    PN03L03

    Abstract: Q67042-S4055 Q67042-S4094
    Text: SPI100N03S2L-03 SPP100N03S2L-03,SPB100N03S2L-03 OptiMOS =Power-Transistor Product Summary Feature 30 VDS  N-Channel RDS on  Enhancement mode max. SMD version ID  Logic Level  Excellent Gate Charge x RDS(on) P- TO262 -3-1 P- TO263 -3-2 V 2.7 m 100 A P- TO220 -3-1


    Original     		PDF SPI100N03S2L-03 SPP100N03S2L-03 SPB100N03S2L-03 Q67042-S4056 SPB100N03S2L-03 Q67042-S4055 PN03L03 Q67042-S4094

    4n0603

    Abstract: 4N06 4N060 IPB120N06S4-03 IPI120N06S4-03 IPP120N06S4-03 PG-TO263-3-2
    Text: IPB120N06S4-03 IPI120N06S4-03, IPP120N06S4-03 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 2.8 mΩ ID 120 A Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • AEC Q101 qualified • MSL1 up to 260°C peak reflow


    Original     		PDF IPB120N06S4-03 IPI120N06S4-03, IPP120N06S4-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N0603 IPI120N06S4-03 4n0603 4N06 4N060 IPB120N06S4-03 IPI120N06S4-03 IPP120N06S4-03 PG-TO263-3-2

    4n0403

    Abstract: IPP80N04S4-03 IPB80N04S4-03 IPI80N04S4-03 PG-TO263-3-2 smd marking 5260
    Text: IPB80N04S4-03 IPI80N04S4-03, IPP80N04S4-03 OptiMOS -T2 Power-Transistor Product Summary Features V DS 40 V R DS on ,max (SMD version) 3.3 mΩ ID 80 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow


    Original     		PDF IPB80N04S4-03 IPI80N04S4-03, IPP80N04S4-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N0403 IPI80N04S4-03 4n0403 IPP80N04S4-03 IPB80N04S4-03 IPI80N04S4-03 PG-TO263-3-2 smd marking 5260

    6r950c6

    Abstract: 6r950c IPx60R950C6 infineon marking TO-252 PG-TO263 IPD60R950C6 IPP60R950C6 Diode SMD SJ 19 6R950
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R950C6 Data Sheet Rev. 2.1, 2010-03-11 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPD60R950C6, IPB60R950C6 IPP60R950C6, IPA60R950C6


    Original     		PDF IPx60R950C6 IPD60R950C6, IPB60R950C6 IPP60R950C6, IPA60R950C6 726-IPB60R950C6 IPB60R950C6 6r950c6 6r950c IPx60R950C6 infineon marking TO-252 PG-TO263 IPD60R950C6 IPP60R950C6 Diode SMD SJ 19 6R950

    6R950C6

    Abstract: IPA60R950C6 IPB60R950C6 IPD60R950C6 IPP60R950C6 JESD22 infineon marking TO-252 IPx60R950C6 TRANSISTOR SMD MARKING g1
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R950C6 Data Sheet Rev. 2.1, 2010-03-11 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPD60R950C6, IPB60R950C6 IPP60R950C6, IPA60R950C6


    Original     		PDF IPx60R950C6 IPD60R950C6, IPB60R950C6 IPP60R950C6, IPA60R950C6 6R950C6 IPA60R950C6 IPB60R950C6 IPD60R950C6 IPP60R950C6 JESD22 infineon marking TO-252 IPx60R950C6 TRANSISTOR SMD MARKING g1

    6r950c6

    Abstract: MOSFET TRANSISTOR SMD MARKING CODE 11 transistor 600v IPA60R950C6 IPB60R950C6 IPD60R950C6 IPP60R950C6 JESD22 to220 pcb footprint
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R950C6 Data Sheet Rev. 2.1, 2010-03-11 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPD60R950C6, IPB60R950C6 IPP60R950C6, IPA60R950C6


    Original     		PDF IPx60R950C6 IPD60R950C6, IPB60R950C6 IPP60R950C6, IPA60R950C6 6r950c6 MOSFET TRANSISTOR SMD MARKING CODE 11 transistor 600v IPA60R950C6 IPB60R950C6 IPD60R950C6 IPP60R950C6 JESD22 to220 pcb footprint