K2717
Abstract: transistor k2717
Text: 2SK2717 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2717 DC−DC Converter and Motor Drive Applications z Low drain−source ON-resistance : RDS (ON) = 2.3 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.4 S (typ.)
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2SK2717
K2717
transistor k2717
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2SK41
Abstract: k4114
Text: 2SK4114 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK4114 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.2 Ω (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.)
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2SK4114
2SK41
k4114
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Untitled
Abstract: No abstract text available
Text: TK6B60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK6B60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.)
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TK6B60D
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Untitled
Abstract: No abstract text available
Text: TK15H50C TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VI TK15H50C ○ Switching Regulator Applications • Unit: mm Low drain−source ON resistance : RDS (ON) = 0. 33 Ω (typ.) : |Yfs| = 8.5 S (typ.) • High forward transfer admittance
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TK15H50C
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IC tc4013bp
Abstract: TC4013BP
Text: TC4013BP/BF TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC4013BP,TC4013BF TC4013B Dual D-Type Flip Flop TC4013B contains two independent circuits of D type flip-flop. The input level applied to DATA input are transferred to Q and Q output by rising edge of the clock pulse. When SET input is
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TC4013BP/BF
TC4013BP
TC4013BF
TC4013B
TC4013BP
DIP14-P-300-2
OP14-P-300-1
IC tc4013bp
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k4a60db
Abstract: K4A60 K4A60D
Text: TK4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK4A60DB Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON-resistance: RDS (ON) = 1.6 Ω(typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600V)
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TK4A60DB
k4a60db
K4A60
K4A60D
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k14a55
Abstract: K14A55D TK14A55D transistor K14A55D
Text: TK14A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK14A55D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.5 S (typ.)
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TK14A55D
k14a55
K14A55D
TK14A55D
transistor K14A55D
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2SK4105
Abstract: K4105 2SK41 K-410
Text: 2SK4105 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK4105 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.)
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2SK4105
SC-67
2-10R1B
2SK4105
K4105
2SK41
K-410
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SMJ9914
Abstract: No abstract text available
Text: SMJ9914A GRIB CONTROLLER JU N E 1 9 8 6 - R E V ISE D M A R C H 1988 • Handles AH IEEE-488 1975/78 Functions • Compatible with IEEE-488A 1980 Supplement • Maximum Transfer Rate . . . Greater Than 360 Kilobytes/Second • Talker and Listener Function T, TE, L, LE
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SMJ9914A
IEEE-488
IEEE-488A
SN75160/161/162
SMJ9914
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l20pF
Abstract: No abstract text available
Text: TOSHIBA 3SK249 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3SK249 Unit in mm TV TUNER, UHF RF AMPLIFIER APPLICATIONS. 2. 1+0. 1 • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance. : Crss = 20fF Typ. • Low Noise Figure.
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3SK249
l20pF
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2SK161
Abstract: 2SK161GR vI652
Text: SILICON N CHANNEL JUNCTION TYPE FIELD EFFECT TRANSISTOR 2SK161 U nit in mm FM TU N ER A P P LIC A T IO N S . VH F B A N D A M P LIF IE R A PP LIC A T IO N S . Low Noise Figure • • : NF = 2.5dB Typ. (f= 100MHz) High Forward Transfer Admittance : |Yfs| = 9mS (Typ.)
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2SK161
100MHz)
2SK161
2SK161-0
2SK161-Y
2SK161-GR
2SK161GR
vI652
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Untitled
Abstract: No abstract text available
Text: 3SK226 SILICON N CH ANNEL DUAL GATE M O S T Y P E FIELD EF F E C T T R A N SIST O R TV TUNER, VHF RF AM PLIFIER APPLICATIONS. FM TUNER APPLICATIONS. U nit in mm +Q2 2.9 - 0.3 • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance : Crss = 0.015pF Typ.
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3SK226
015pF
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2SK2038
Abstract: Transistor TOSHIBA 2SK
Text: TOSHIBA 2SK2038 Field Effect Transistor U n it in m m Silicon N Channel MOS Type rc-MOS 11.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance • R ds (ON) = 1 (Typ-) • High Forward Transfer Adm ittance - Yfs' = 3.OS (Typ.)
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2SK2038
DRAI11
2SK2038
Transistor TOSHIBA 2SK
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2SK1357
Abstract: 2Sk1357 transistor
Text: 2SK1357 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE jt-MOS h -5 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. 1 5.9 MAX. *3.2±0 2 FEATURES: • Low Drain-Source ON Resistance : RDS(0N)=2.5Q (Typ.) •High Forward Transfer Admittance : I Y f s ! = 2. 0S( Typ. )
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2SK1357
300/uA
10jKS
2SK1357
2Sk1357 transistor
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800v nmos
Abstract: No abstract text available
Text: TOSHIBA 2SK1365 Field Effect Transistor Unit in mm Silicon N Channel MOS Type n-MOS 11.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance - Rds(on ) = 1 (Typ.) • High Forward Transfer Admittance - Yfs' = 4. OS (Typ.)
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2SK1365
800v nmos
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2SK2030
Abstract: No abstract text available
Text: T O S H IB A 2SK2030 Field Effect Transistor Unit in mm Silicon N Channel M OS Type ti-MOS IV High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance " r d s (ON) = 0.1 OQ (Typ.) • High Forward Transfer Adm ittance - Yfs = 3 .OS (Typ.)
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2SK2030
2SK2030
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2SJ201
Abstract: 2SJ20
Text: TOSHIBA FIELD EFFECT TRANSISTOR 2SJ201 SILICON P CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm 03.3 ±0.2 20.5MAX : Vd s s ^-ZOOV MIN. 16.01 . High Breakdown Voltage . High Forward Transfer Admittance : | Yfs | -5.OS (TYP.) : « o -H o O (D
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2SJ201
2SK1530
Ta-25
2-21F1B
-10mA,
2SJ201
2SJ20
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TIL186
Abstract: No abstract text available
Text: TILI 86-1, TILI 86-2, TIL186-3, TIL186 4 AC INPUT OPTOCOUPLERS 0 2 9 8 1 , DECEMBER 1 9 8 6 -R E V IS E D JUNE 198 9 • A-C Signal Input • Choice of Four Current Transfer Ratios • Gallium Arsenide Dual-Diode Infrared Sources Coupled to a Silicon NPN Photo-Transistor
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TIL186-3,
TIL186
E65085
aA186
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 3SK291 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-CHANNEL DUAL GATE MOS TYPE 3SK291 TV TUNER, UHF RF AMPLIFIER APPLICATIONS : • Superior Cross Modulation Performance • Low Reverse Transfer Capacitance : Crss = 0.016pF Typ. • Low Noise Figure
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3SK291
016pF
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TPC8001 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI TPC8001 LITHIUM ION BATTERY PORTABLE MACHINES AN D TOOLS INDUSTRIAL APPLICATIONS Unit in mm NOTE BOOK PC Low Drain-Source ON Resistance : Rd S (ON)= 15mfi (Typ.) High Forward Transfer Admittance: |Yfs| = llS (Typ.)
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TPC8001
15mfi
10//A
20kfl)
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transistor d 4515
Abstract: Transistor 4515 2-21F1C GT20D101
Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT20D101 SILICON N CHANNEL TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage ¿3.3 ¿0.2 20.5MAX : Vc e s =250V MIN. . High Forward Transfer Admittance : | Yfe | =10S (TYP.) . Complementary to GT20D201
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GT20D101
GT20D201
2-21F1C
transistor d 4515
Transistor 4515
2-21F1C
GT20D101
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2SC3136
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR -2SC3136 TV VHF M IX E R A PPLICATIONS. • • U n i t in m m High Conversion Gain : Gce = 23dB Typ. Low Reverse Transfer Capacitance : Cre = 0.4pF (Typ.) M A X IM U M RATIN GS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage
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-2SC3136
SC-43
260MHz
2SC3136
SCN-5962AC0-C5)
TTA25A200A
2SC3136
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK2842 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2842 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm Low Drain-Source ON Resistance • High Forward Transfer Admittance : |Yfs| = 9.0S (Typ.)
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2SK2842
100//A
20kfi)
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T20D201
Abstract: gt20d201
Text: TOSHIBA GT20D201 Insulated Gate Bipolar Transistor U nit in m m Silicon P Channel MOS Type High Power Amplifier Application Features • High Breakdown Voltage - VCES = -250V Min • High Forward Transfer Admittance - Yfs' = 10S (Typ.) • Complementary to GT20D101
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GT20D201
-250V
GT20D101
T20D201
T20D201
gt20d201
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