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    HPC Optics FS-TRAN-SFP-SR-HPC

    FIBER TXRX SFP+ 10.5GBPS 850NM
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    HPC Optics FN-TRAN-SFP-SR-HPC

    FORTINET COMPATIBLE FN-TRAN-SFP+
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    HPC Optics FN-TRAN-SFP-GC-HPC

    FORTINET COMPATIBLE FG-TRAN-SFP+
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    DigiKey FN-TRAN-SFP-GC-HPC Tray 49
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    Eaton Bussmann POE-TRANSFORMER

    KIT POE FLYBACK TRANSFORMER
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    Banner Engineering Corp BWA-CURRENT-TRANSFORMER-150A

    CURR SENSE XFMR 150A IN-LINE
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    TRANSF Datasheets (56)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AD22 Transforming Technologies OUTLET GROUND ADAPTER Original PDF
    CC0037 Transforming Technologies 6' COIL CORD, BLACK, 4MM Original PDF
    CC0043 Transforming Technologies 12' COIL CORD, BLACK, 4MM Original PDF
    CP1518 Transforming Technologies COMMON GROUND, 15', 1 MEG, MALE Original PDF
    CP2522 Transforming Technologies LOW PRFL CMN GND CORD10MM MALE Original PDF
    CP2524 Transforming Technologies LOW PROFILE, 15', 1 MEG, FEMALE Original PDF
    CP4070 Transforming Technologies METAL BENCH MOUNT GROUND CORD Original PDF
    CS1090 Transforming Technologies ESD UNIVERSAL SNAP KIT, 10MM Original PDF
    DK-AD22 Transforming Technologies OUTLET GROUND ADAPTER Original PDF
    DK-CC0037 Transforming Technologies 6' COIL CORD, BLACK, 4MM, CLASSI Original PDF
    DK-CC0043 Transforming Technologies 12' COIL CORD, BLACK, 4MM, CLASS Original PDF
    DK-CP1518 Transforming Technologies COMMON PT. GROUND (CPT), 15', 1 Original PDF
    DK-CP2522 Transforming Technologies LOW PROFILE CPT, 15', 1 MEG, MAL Original PDF
    DK-CP2524 Transforming Technologies LOW PROFILE CPT, 15', 1 MEG, FEM Original PDF
    DK-CP4070 Transforming Technologies METAL BENCH MOUNT GROUND, 4MM, 1 Original PDF
    DK-CS1010 Transforming Technologies CLINCH SNAP, 10MM, FEMALE Original PDF
    DK-CS1020 Transforming Technologies CLINCH SNAP, 10MM, MALE Original PDF
    DK-CS1090 Transforming Technologies UNIVERSAL SNAP KIT Original PDF
    DK-FSM2424B Transforming Technologies 2'X2' FIELD SERVICE KIT, BLUE, 2 Original PDF
    DK-FSM2424R Transforming Technologies 2'X2' FIELD SERVICE KIT, RED, 2 Original PDF

    TRANSF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K2717

    Abstract: transistor k2717
    Text: 2SK2717 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2717 DC−DC Converter and Motor Drive Applications z Low drain−source ON-resistance : RDS (ON) = 2.3 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.4 S (typ.)


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    PDF 2SK2717 K2717 transistor k2717

    2SK41

    Abstract: k4114
    Text: 2SK4114 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK4114 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.2 Ω (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.)


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    PDF 2SK4114 2SK41 k4114

    Untitled

    Abstract: No abstract text available
    Text: TK6B60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK6B60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.)


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    PDF TK6B60D

    Untitled

    Abstract: No abstract text available
    Text: TK15H50C TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VI TK15H50C ○ Switching Regulator Applications • Unit: mm Low drain−source ON resistance : RDS (ON) = 0. 33 Ω (typ.) : |Yfs| = 8.5 S (typ.) • High forward transfer admittance


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    PDF TK15H50C

    IC tc4013bp

    Abstract: TC4013BP
    Text: TC4013BP/BF TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC4013BP,TC4013BF TC4013B Dual D-Type Flip Flop TC4013B contains two independent circuits of D type flip-flop. The input level applied to DATA input are transferred to Q and Q output by rising edge of the clock pulse. When SET input is


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    PDF TC4013BP/BF TC4013BP TC4013BF TC4013B TC4013BP DIP14-P-300-2 OP14-P-300-1 IC tc4013bp

    k4a60db

    Abstract: K4A60 K4A60D
    Text: TK4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK4A60DB Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON-resistance: RDS (ON) = 1.6 Ω(typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600V)


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    PDF TK4A60DB k4a60db K4A60 K4A60D

    SMJ9914

    Abstract: No abstract text available
    Text: SMJ9914A GRIB CONTROLLER JU N E 1 9 8 6 - R E V ISE D M A R C H 1988 • Handles AH IEEE-488 1975/78 Functions • Compatible with IEEE-488A 1980 Supplement • Maximum Transfer Rate . . . Greater Than 360 Kilobytes/Second • Talker and Listener Function T, TE, L, LE


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    PDF SMJ9914A IEEE-488 IEEE-488A SN75160/161/162 SMJ9914

    l20pF

    Abstract: No abstract text available
    Text: TOSHIBA 3SK249 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3SK249 Unit in mm TV TUNER, UHF RF AMPLIFIER APPLICATIONS. 2. 1+0. 1 • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance. : Crss = 20fF Typ. • Low Noise Figure.


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    PDF 3SK249 l20pF

    2SK161

    Abstract: 2SK161GR vI652
    Text: SILICON N CHANNEL JUNCTION TYPE FIELD EFFECT TRANSISTOR 2SK161 U nit in mm FM TU N ER A P P LIC A T IO N S . VH F B A N D A M P LIF IE R A PP LIC A T IO N S . Low Noise Figure • • : NF = 2.5dB Typ. (f= 100MHz) High Forward Transfer Admittance : |Yfs| = 9mS (Typ.)


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    PDF 2SK161 100MHz) 2SK161 2SK161-0 2SK161-Y 2SK161-GR 2SK161GR vI652

    Untitled

    Abstract: No abstract text available
    Text: IN T E G R A T E D C I R C U IT S UC1871 UC2871 UC3871 U N IT R O D E Resonant Fluorescent Lamp Driver 1nA ICC when Disabled PWM Control fo r LCD Supply Zero Voltage Switched ZVS on Push-Pull Drivers Open Lamp Detect Circuitry 4.5V to 20V Operation Non-saturating Transform er


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    PDF UC1871 UC2871 UC3871 UC3871,

    Untitled

    Abstract: No abstract text available
    Text: 3SK226 SILICON N CH ANNEL DUAL GATE M O S T Y P E FIELD EF F E C T T R A N SIST O R TV TUNER, VHF RF AM PLIFIER APPLICATIONS. FM TUNER APPLICATIONS. U nit in mm +Q2 2.9 - 0.3 • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance : Crss = 0.015pF Typ.


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    PDF 3SK226 015pF

    2SK2038

    Abstract: Transistor TOSHIBA 2SK
    Text: TOSHIBA 2SK2038 Field Effect Transistor U n it in m m Silicon N Channel MOS Type rc-MOS 11.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance • R ds (ON) = 1 (Typ-) • High Forward Transfer Adm ittance - Yfs' = 3.OS (Typ.)


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    PDF 2SK2038 DRAI11 2SK2038 Transistor TOSHIBA 2SK

    2SK1357

    Abstract: 2Sk1357 transistor
    Text: 2SK1357 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE jt-MOS h -5 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. 1 5.9 MAX. *3.2±0 2 FEATURES: • Low Drain-Source ON Resistance : RDS(0N)=2.5Q (Typ.) •High Forward Transfer Admittance : I Y f s ! = 2. 0S( Typ. )


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    PDF 2SK1357 300/uA 10jKS 2SK1357 2Sk1357 transistor

    2SK1928

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1928 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOS Type rc-MOS II h iZ . High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance - RiD S (O N ) = 0.7Q [Typ.) • High Forward Transfer Admittance


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    PDF 2SK1928 ij100A/MS 2SK1928

    2SK2030

    Abstract: No abstract text available
    Text: T O S H IB A 2SK2030 Field Effect Transistor Unit in mm Silicon N Channel M OS Type ti-MOS IV High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance " r d s (ON) = 0.1 OQ (Typ.) • High Forward Transfer Adm ittance - Yfs = 3 .OS (Typ.)


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    PDF 2SK2030 2SK2030

    2SJ201

    Abstract: 2SJ20
    Text: TOSHIBA FIELD EFFECT TRANSISTOR 2SJ201 SILICON P CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm 03.3 ±0.2 20.5MAX : Vd s s ^-ZOOV MIN. 16.01 . High Breakdown Voltage . High Forward Transfer Admittance : | Yfs | -5.OS (TYP.) : « o -H o O (D


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    PDF 2SJ201 2SK1530 Ta-25 2-21F1B -10mA, 2SJ201 2SJ20

    20TAWG

    Abstract: 3E2A UC1901 UC2901
    Text: Iapplication flj IN F Ö 1 H 1 available j UNITRODE UC1901 UC2901 UC3901 Isolated Feedback Generator FEATURES DESCRIPTION • An Amplitude-Modulation System for Transformer Coupling an Isolated Feedback Error Signal The UC1901 family is designed to solve many of the problems associ­


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    PDF UC1901 UC2901 UC3901 700nA, 20TAWG 3E2A

    TIL186

    Abstract: No abstract text available
    Text: TILI 86-1, TILI 86-2, TIL186-3, TIL186 4 AC INPUT OPTOCOUPLERS 0 2 9 8 1 , DECEMBER 1 9 8 6 -R E V IS E D JUNE 198 9 • A-C Signal Input • Choice of Four Current Transfer Ratios • Gallium Arsenide Dual-Diode Infrared Sources Coupled to a Silicon NPN Photo-Transistor


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    PDF TIL186-3, TIL186 E65085 aA186

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 3SK291 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-CHANNEL DUAL GATE MOS TYPE 3SK291 TV TUNER, UHF RF AMPLIFIER APPLICATIONS : • Superior Cross Modulation Performance • Low Reverse Transfer Capacitance : Crss = 0.016pF Typ. • Low Noise Figure


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    PDF 3SK291 016pF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TPC8001 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI TPC8001 LITHIUM ION BATTERY PORTABLE MACHINES AN D TOOLS INDUSTRIAL APPLICATIONS Unit in mm NOTE BOOK PC Low Drain-Source ON Resistance : Rd S (ON)= 15mfi (Typ.) High Forward Transfer Admittance: |Yfs| = llS (Typ.)


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    PDF TPC8001 15mfi 10//A 20kfl)

    transistor d 4515

    Abstract: Transistor 4515 2-21F1C GT20D101
    Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT20D101 SILICON N CHANNEL TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage ¿3.3 ¿0.2 20.5MAX : Vc e s =250V MIN. . High Forward Transfer Admittance : | Yfe | =10S (TYP.) . Complementary to GT20D201


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    PDF GT20D101 GT20D201 2-21F1C transistor d 4515 Transistor 4515 2-21F1C GT20D101

    2SC3136

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR -2SC3136 TV VHF M IX E R A PPLICATIONS. • • U n i t in m m High Conversion Gain : Gce = 23dB Typ. Low Reverse Transfer Capacitance : Cre = 0.4pF (Typ.) M A X IM U M RATIN GS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage


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    PDF -2SC3136 SC-43 260MHz 2SC3136 SCN-5962AC0-C5) TTA25A200A 2SC3136

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2842 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2842 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm Low Drain-Source ON Resistance • High Forward Transfer Admittance : |Yfs| = 9.0S (Typ.)


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    PDF 2SK2842 100//A 20kfi)

    T20D201

    Abstract: gt20d201
    Text: TOSHIBA GT20D201 Insulated Gate Bipolar Transistor U nit in m m Silicon P Channel MOS Type High Power Amplifier Application Features • High Breakdown Voltage - VCES = -250V Min • High Forward Transfer Admittance - Yfs' = 10S (Typ.) • Complementary to GT20D101


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    PDF GT20D201 -250V GT20D101 T20D201 T20D201 gt20d201