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    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /¿PD431008L 1M-BIT CM OS FAST STATIC RAM 128K-WORD BY 8-BIT D escription The,uPD431008L is a high speed, low power, 1, 048, 576 bits 131,072 w ords by 8 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.


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    PD431008L 128K-WORD uPD431008L 32-pin PD431008LLE-A17 431008LLE-A20 b427525 oo8t8885 PDF

    Untitled

    Abstract: No abstract text available
    Text: NEC NEC Electronics Inc. fiPD431008 131,072 X 8-Bit Static CMOS RAM Description Pin Configuration The /JPD431008 is a 131,072-word by 8-bit static RAM fabricated with advanced silicon-gate technology. Its unique design uses CMOS peripheral circuits and Nchannel memory cells to make the /yPD431008 a high­


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    fiPD431008 /JPD431008 072-word /yPD431008 /L/PD431008 32-pin tPD431008 JUPD431008 JJPD431008 PDF