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    TP251 Search Results

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    TP251 Price and Stock

    Microchip Technology Inc TP2510N8-G

    MOSFET P-CH 100V 480MA TO243AA
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    DigiKey TP2510N8-G Digi-Reel 13,500 1
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    TP2510N8-G Cut Tape 13,500 1
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    TP2510N8-G Reel 12,000 2,000
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    Mouser Electronics TP2510N8-G 4,100
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    Verical TP2510N8-G 14,000 2,000
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    TP2510N8-G 13,500 500
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    TP2510N8-G 1,340 59
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    TP2510N8-G Reel 2,000
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    Onlinecomponents.com TP2510N8-G 13,500
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    NAC TP2510N8-G 2,000
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    Master Electronics TP2510N8-G 13,500
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    Diodes Incorporated ZXTP25100CZTA

    TRANS PNP 100V 1A SOT89-3
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    DigiKey ZXTP25100CZTA Reel 13,000 1,000
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    TME ZXTP25100CZTA 1
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    Avnet Asia ZXTP25100CZTA 8 Weeks 1,000
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    Diodes Incorporated ZXTP25100CFHTA

    TRANS PNP 100V 1A SOT23-3
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    DigiKey ZXTP25100CFHTA Digi-Reel 10,329 1
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    Newark ZXTP25100CFHTA Cut Tape 1,175 1
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    Avnet Asia ZXTP25100CFHTA 26 Weeks 3,000
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    Diodes Incorporated ZXTP25100BFHTA

    TRANS PNP 100V 2A SOT23-3
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    DigiKey ZXTP25100BFHTA Cut Tape 6,095 1
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    ZXTP25100BFHTA Reel 6,000 3,000
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    Diodes Incorporated ZXTP25140BFHQTA

    TRANS PNP 140V 1A SOT23-3
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    DigiKey ZXTP25140BFHQTA Cut Tape 3,217 1
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    TP251 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TP251 Unknown Cross Reference Datasheet Scan PDF
    TP251 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    TP251 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    TP251 Total Power International Single and Dual Output DC/DC Converters Scan PDF
    TP2510 Supertex P-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    TP2510 Supertex P-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    TP2510N8 Supertex SEMICONDUCTOR DEVICE, TRANSISTOR, P-CHANNEL MOSFET SOT-89 Original PDF
    TP2510N8 Supertex P-Channel Enhancement-Mode Vertical DMOS FET Original PDF
    TP2510N8-G Supertex Low Threshold P-Channel Enhancement Mode Vertical DMOS FETs Original PDF
    TP2510ND Supertex P-Channel Enhancement-Mode Vertical DMOS FET Original PDF
    TP251A Unknown Basic Transistor and Cross Reference Specification Scan PDF
    TP251A Sprague Semiconductor Data Book 1977 Scan PDF
    TP251B Unknown Basic Transistor and Cross Reference Specification Scan PDF
    TP251B Sprague Semiconductor Data Book 1977 Scan PDF
    TP251CA Unknown Basic Transistor and Cross Reference Specification Scan PDF
    TP251CA Sprague Semiconductor Data Book 1977 Scan PDF
    TP251NR Total Power International Single and Dual Output DC/DC Converters Scan PDF

    TP251 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    b0914

    Abstract: No abstract text available
    Text: TP2510 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination


    Original
    TP2510 125pF DSFP-TP2510 B091408 b0914 PDF

    Untitled

    Abstract: No abstract text available
    Text: TP251 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)40 I(C) Max. (A)200m Absolute Max. Power Diss. (W)2.9 Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


    Original
    TP251 PDF

    TP5A

    Abstract: TP2510 TP2510N8 TP2510ND
    Text: TP2510 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-243AA* Die† -100V 3.5Ω -2.4V -1.5A TP2510N8 TP2510ND * Same as SOT-89. Product supplied on 2000 piece carrier tape reels.


    Original
    TP2510 O-243AA* -100V TP2510N8 TP2510ND OT-89. O-243AA 125pF TP5A TP2510 TP2510N8 TP2510ND PDF

    TP5A

    Abstract: TP2510 TP2510N8 TP2510ND
    Text: TP2510 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-243AA* Die† -100V 3.5Ω -2.4V -1.5A TP2510N8 TP2510ND * Same as SOT-89. Product supplied on 2000 piece carrier tape reels.


    Original
    TP2510 O-243AA* -100V TP2510N8 TP2510ND OT-89. O-243AA 125pF TP5A TP2510 TP2510N8 TP2510ND PDF

    TP2510

    Abstract: No abstract text available
    Text: TP2510 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TP2510 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si


    Original
    TP2510 TP2510 A020309 PDF

    Untitled

    Abstract: No abstract text available
    Text: TP251A Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A) Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original
    TP251A PDF

    A110507

    Abstract: tp5aw
    Text: TP2510 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination


    Original
    TP2510 125pF TP2510 O-243AA OT-89) O-243, DSFP-TP2510 A110507 A110507 tp5aw PDF

    tp5aw

    Abstract: TP2510 TP2510N8-G TP2510ND
    Text: TP2510 Low Threshold P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► These low threshold enhancement-mode normally-off transistors utilize a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination


    Original
    TP2510 125pF O-243, A082307 tp5aw TP2510 TP2510N8-G TP2510ND PDF

    TO-243AA

    Abstract: TP2510 TP2510N8 TP2510N8-G TP2510ND tp5a
    Text: TP2510 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) -100V 3.5Ω -2.4V -1.5A Order Number / Package Die† TO-243AA* TP2510N8 TP2510ND TP2510N8-G * Same as SOT-89. Product supplied on 2000 piece carrier tape reels.


    Original
    TP2510 -100V O-243AA* TP2510N8 TP2510ND TP2510N8-G OT-89. O-243AA 125pF TO-243AA TP2510 TP2510N8 TP2510N8-G TP2510ND tp5a PDF

    TP2510

    Abstract: No abstract text available
    Text: Supertex inc. TP2510 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TP2510 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description


    Original
    TP2510 TP2510 A031610 PDF

    tp5aw

    Abstract: TP5A Most TP2510 TP2510N8-G TP2510ND
    Text: TP2510 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination


    Original
    TP2510 125pF DSFP-TP2510 B022309 tp5aw TP5A Most TP2510 TP2510N8-G TP2510ND PDF

    TP2506

    Abstract: TP2510ND TO-243AA TP2510 TP2510N8 P024 TP2506ND
    Text: TP2506/TP2510 TP2506 TP2510 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-243AA* Dice† -60V 3.5Ω -2.4V -1.5A — TP2506ND -100V 3.5Ω -2.4V


    Original
    TP2506/TP2510 TP2506 TP2510 O-243AA* TP2506ND -100V TP2510N8 TP2510ND OT-89. TP2506 TP2510ND TO-243AA TP2510 TP2510N8 P024 TP2506ND PDF

    Untitled

    Abstract: No abstract text available
    Text: TP2510 Low Threshold P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► These low threshold enhancement-mode normally-off transistors utilize a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination


    Original
    TP2510 125pF O-243AA OT-89) A032807 PDF

    Untitled

    Abstract: No abstract text available
    Text: TP251NR Linear ICs dc-to-dc/Charge Pump Voltage Converter status Military/High-RelN Output Voltage Nominal V 9.0 Load Current Max. (A)200m Drop-Out Volt Max. P(D) Max. (W) Nom. Supp (V)5.0 Minimum Operating Temp (øC)-25 Maximum Operating Temp (øC)71 Package StyleModule


    Original
    TP251NR Code24-241 Pins24 NumberLN02400241 PDF

    TA 7136 p

    Abstract: TP2510 TP2510N8 TP2510ND
    Text: TP2510 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-243AA* Die† -100V 3.5Ω -2.4V -1.5A TP2510N8 TP2510ND * Same as SOT-89. Product supplied on 2000 piece carrier tape reels.


    Original
    TP2510 O-243AA* -100V TP2510N8 TP2510ND OT-89. TA 7136 p TP2510 TP2510N8 TP2510ND PDF

    Untitled

    Abstract: No abstract text available
    Text: TP2510 Superte x inc. Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ R d S ON VQS(th) I d (ON) b v dgs (max) (max) (min) TO-243AA* Diet -100V 3.5£2 -2.4V -1.5A TP2510N8 TP2510ND * Same as SOT-89. Product supplied on 2000 piece carrier tape reels.


    OCR Scan
    TP2510 O-243AA* TP2510N8 TP2510ND -100V OT-89. PDF

    VP1304N2

    Abstract: TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2
    Text: _ _ fflpSupertex inc. Device Page # Device Page # Device A lp h a n u m e ric Index Page # Device Page# 2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 20 24 28 28 28 TN2106K1 TN2106N3 TN2124K1 TN2501N8 TN2501ND 57 57 61 63 63 TP2504ND TP2506ND TP2510N8 TP2510ND


    OCR Scan
    2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 DN2535ND DN2540N2 DN2540N3 DN2540N5 DN2540N8 VP1304N2 TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2 PDF

    Untitled

    Abstract: No abstract text available
    Text: ^ TP2516 TP2520 S j I I r . zj r r jij 'f 1 r I r*, •mimimu . .immilli _ Low T h rash o M P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss / ^DS ON ^GS(th) ^D(ON) b v dgs (max) (max) (min)


    OCR Scan
    TP2516 TP2520 O-243AA* TP2520N8 TP2516ND TP2520ND -160V -200V TP2516/TP2520 PDF

    TP2511

    Abstract: No abstract text available
    Text: 12E D I b B t i ? 25 M MOTOROLA MOTOROLA SC QGÔÔ24E XSTRS/R *ì | F 1-33-H SEMICONDUCTOR TECHNICAL DATA TP2511 Advance Inform ation The RF Line UHF P o w e r T ran sisto r l o w — 470 M H z UHF POWER TRANSISTOR The TP2511 is designed for 12.5 V UHF amplifiers. Its construction which incorporates


    OCR Scan
    1-33-H TP2511 TP2511 PDF

    Untitled

    Abstract: No abstract text available
    Text: TP2510 Supertex inc. Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / ^DS ON ^GS(th) I d (ON) b v dgs (max) (max) (min) TO-243AA* Diet -100V 3.5£2 -2.4V -1.5A TP2510N8 TP2510ND * Sam e as SO T-89. Product supplied on 2000 piece carrier tape reels.


    OCR Scan
    TP2510 O-243AA* -100V TP2510N8 TP2510ND 125pF PDF

    p023 diode

    Abstract: No abstract text available
    Text: ^ ^ Si i I r ^ zj r* r TP2506 TP2510 Low Thrash o B 1[ i r * , •mimimu . .immilli _ P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^DS ON ^GS(th) ^D(ON) b v dgs (max) (max) (min) TO-243AA*


    OCR Scan
    TP2506 TP2510 O-243AA* TP2510N8 TP2506ND TP2510ND -100V TP2506/TP2510 p023 diode PDF

    Untitled

    Abstract: No abstract text available
    Text: T P 25C LjèSupertex inc. Low T h r e s h o l d P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss/ R d s <o n V o s th ) '□(ON) b v dgs (max) (max) (min) TO-243AA* DICEt -160V 12a -2.4V -0.75A — TP2516ND


    OCR Scan
    O-243AA* TP2516ND TP2520ND -160V -200V TP2520N8 OT-89, TP25C PDF

    Untitled

    Abstract: No abstract text available
    Text: ^ TP o TP2516 Supertex inc. 252 Low Thresh old P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information ^ G S th b v dqs (max) (max) (min) TO-243AA* DICE+ -160V 12£2 -2.4V -0.75A — TP2516ND -200V 12Î2 -2.4V -0.75A TP2520N8 TP2520ND z ^D S (O N )


    OCR Scan
    TP2516 O-243AA* TP2520N8 TP2516ND TP2520ND -160V -200V OT-89. TP2516/TP2520 PDF

    Untitled

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    Text: i£E D I t3b?as4 MOTORCLA MOTOROLA Goafiam 7 | SC X S T R S /R X 'S l F SEM IC O N D U C T O R TECHNICAL DATA TP2510 Advance Inform ation The RF Line U H F P o w e r T ra n sisto r 10 W — 470 M H z UHF PO W ER T R A N S IS T O R The TP2510 is d esigned for 12.5 V U H F amplifiers. Its construction which incorporates


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