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    TOSHIBA TRANSISTOR K2610 Search Results

    TOSHIBA TRANSISTOR K2610 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA TRANSISTOR K2610 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    k2610 toshiba

    Abstract: toshiba transistor k2610 K2610 transistor k2610 K261
    Text: 2SK2610 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2610 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 2.3 Ω (typ.) High forward transfer admittance : |Yfs|= 4.4 S (typ.)


    Original     		2SK2610 k2610 toshiba toshiba transistor k2610 K2610 transistor k2610 K261 PDF

    K2610

    Abstract: transistor k2610 Toshiba K2610 k2610 toshiba 2SK2610
    Text: 2SK2610 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2610 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 2.3 Ω (typ.) High forward transfer admittance : |Yfs|= 4.4 S (typ.)


    Original     		2SK2610 K2610 K2610 transistor k2610 Toshiba K2610 k2610 toshiba 2SK2610 PDF

    K2610

    Abstract: k2610 toshiba transistor k2610 2SK2610 k261 SC-65 toshiba transistor k2610
    Text: 2SK2610 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2610 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 2.3 Ω (typ.) z High forward transfer admittance : |Yfs|= 4.4 S (typ.)


    Original     		2SK2610 K2610 k2610 toshiba transistor k2610 2SK2610 k261 SC-65 toshiba transistor k2610 PDF

    k2610 toshiba

    Abstract: K2610 transistor k2610 Toshiba K2610 toshiba transistor k2610 2SK2610 SC-65 DIODE 436
    Text: 2SK2610 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2610 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 2.3 Ω (typ.) z High forward transfer admittance : |Yfs|= 4.4 S (typ.)


    Original     		2SK2610 k2610 toshiba K2610 transistor k2610 Toshiba K2610 toshiba transistor k2610 2SK2610 SC-65 DIODE 436 PDF

    K2610

    Abstract: transistor k2610 Toshiba K2610 k2610 toshiba 2SK2610 SC-65 K-261
    Text: 2SK2610 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2610 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 2.3 Ω (typ.) z High forward transfer admittance : |Yfs|= 4.4 S (typ.)


    Original     		2SK2610 K2610 K2610 transistor k2610 Toshiba K2610 k2610 toshiba 2SK2610 SC-65 K-261 PDF