Untitled
Abstract: No abstract text available
Text: RN2101CT ~ RN2106CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101CT, RN2102CT, RN2103CT RN2104CT, RN2105CT, RN2106CT Switching Applications Inverter Circuit Applications Interface Circuit Applications
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RN2101CT
RN2106CT
RN2101CT,
RN2102CT,
RN2103CT
RN2104CT,
RN2105CT,
RN1101CT
RN1106CT
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Untitled
Abstract: No abstract text available
Text: RN2107CT ~ RN2109CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2107CT, RN2108CT, RN2109CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications
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RN2107CT
RN2109CT
RN2107CT,
RN2108CT,
RN1107CT
RN1109CT
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Untitled
Abstract: No abstract text available
Text: RN2110,RN2111 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2110, RN2111 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT 1.6 ±0.2 AND DRIVER CIRCUIT APPLICATIONS. • With Built-in Bias Resistors • Simplify Circuit Design
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RN2110
RN2111
RN2110,
RN1110,
RN1111
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN2001-RN2006 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2001, RN2002, RN2003 RN2004, RN2005, RN2006 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS Unit in mm . 5.1 MAX. • With Built-in Bias Resistors
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RN2001-RN2006
RN2001,
RN2002,
RN2003
RN2004,
RN2005,
RN2006
RN1001
RN1006
RN2001
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RN4605
Abstract: No abstract text available
Text: TOSHIBA RN4605 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4605 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT + 0.2 AND DRIVER CIRCUIT APPLICATIONS. 2.8-0.3 1.6 • • • • + 0.2 -
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RN4605
RN4605
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN2421-RN2427 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2421, RN2422, RN2423, RN2424 RN2425, RN2426, RN2427 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS Unit in mm + 0.5 High Current Type (Iq (M ax.)= _ 800mA)
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RN2421-RN2427
RN2421,
RN2422,
RN2423,
RN2424
RN2425,
RN2426,
RN2427
800mA)
RN1421
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN2407,RN2408,RN2409 TOSHIBA TRANSISTOR SILOCON PNP EPITAXIAL TYPE PCT PROCESS RN2407, RN2408, RN2409 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS + 0.5 • With Built-in Bias Resistors • Simplify Circuit Design
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RN2407
RN2408
RN2409
RN2407,
RN2408,
RN2409
RN1407
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RN2223
Abstract: ko iq
Text: TOSHIBA RN2221-RN2227 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2221, RN2222, RN2223, RN2224 RN2225, RN2226, RN2227 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS Unit in mm 4.2MAX. High Current Type (l£ (MAX)= —800mA)
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RN2221-RN2227
RN2221,
RN2222,
RN2223,
RN2224
RN2225,
RN2226,
RN2227
--800mA)
RN1221
RN2223
ko iq
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transistor 2204
Abstract: No abstract text available
Text: TOSHIBA RN2201-RN2206 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2201, RN2202, RN2203 RN2204, RN2205, RN2206 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS 4.2MAX. • • • • With Built-in Bias Resistors
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RN2201-RN2206
RN2201,
RN2202,
RN2203
RN2204,
RN2205,
RN2206
RN1201
RN1206
RN2201
transistor 2204
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TRANSISTOR MARKING YB
Abstract: RN2901 RN2902 RN2903 RN2904 RN2905 RN2906 TRANSISTOR MARKING TE US6
Text: TOSHIBA RN2901-RN2906 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2901, RN2902, RN2903, RN2904, RN2905, RN2906 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • Including Two Devices in US6 (Ultra Super Mini Type with 6 leads)
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RN2901-RN2906
RN2901,
RN2902,
RN2903,
RN2904,
RN2905,
RN2906
RN1901-RN1906
RN2901
RN2902
TRANSISTOR MARKING YB
RN2903
RN2904
RN2905
RN2906
TRANSISTOR MARKING TE US6
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN2401,RN2402,RN2403,RN2404,RN2405,RN2406 TOSHIBA TRANSISTOR SILOCON PNP EPITAXIAL TYPE PCT PROCESS RN2401, RN2402, RN2403 RN2404, RN2405, RN2406 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS • W ith Bu ilt- in B ia s Resistors
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RN2401
RN2402
RN2403
RN2404
RN2405
RN2406
RN2401,
RN2402,
RN2403
RN2404,
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN4610 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4610 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT + 0.2 AND DRIVER CIRCUIT APPLICATIONS. 2.8-0.3 + 0.2 1 .6 - 0 .1 • • •
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RN4610
961001EAA2'
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LM 1709
Abstract: No abstract text available
Text: TOSHIBA RN2707-RN2709 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2707, RN2708, RN2709 U nit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. 1 .2 5 1 0 .1 -m- » 1 - 1— • t !
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RN2707-RN2709
RN2707,
RN2708,
RN2709
RN2707
RN2708
LM 1709
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN2307-RN2309 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2307, RN2308, RN2309 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS 2.1 ¿ 0.1 • • • • 1.25±0.1 With Built-in Bias Resistors
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RN2307-RN2309
RN2307,
RN2308,
RN2309
RN1307
RN2307
RN2308
SC-70
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN2310,RN2311 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2310, RN2311 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS • • • • With Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process
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RN2310
RN2311
RN2310,
RN1310,
RN1311
RN2310
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN2412,RN2413 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2412, RN2413 U nit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. + 0.5 2 .5 - 0 .3 • With Built-in Bias Resistors • Sim plify Circuit Design
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RN2412
RN2413
RN2412,
RN1412,
RN1413
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Marking HEB
Abstract: RN2607 RN2608 RN2609
Text: TOSHIBA RN2607-RN2609 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2607, RN2608, RN2609 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. + 0.2 2 .8 -0 .3 + 0.2 1.6-0.1 Including Two Devices in SM6 (Super Mini Type with 6 leads)
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RN2607-RN2609
RN2607,
RN2608,
RN2609
RN1607-RN1609
RN2607
RN2608
RN2609
RN2608
Marking HEB
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Untitled
Abstract: No abstract text available
Text: Tb TOSHIBA {DISCRETE/OPT0> 9097250 TOSHIBA D lf| 1017550 □007331 DISCRETE/OPTO SILICON PNP EPITAXIA L TYPE (PCT PROCESS) _ (DARLINGTON POWER)_ INDUSTRIAL APPLICATIONS Unit in nun SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS.
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN2967-RN2969 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2967, RN2968, RN2969 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. Unit in mm 2.1 ±0.1 1. 2 5 ± 0.1 • Including Two Devices in US6 (Ultra Super Mini Type with 6
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RN2967-RN2969
RN2967,
RN2968,
RN2969
RN1967
RN1969
RN2967
RN2968
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN2110F,RN2111F TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN711Í1F RN7111F • m ■ 'm g ■ m ■ 'm ■ ■ ■ ■■ SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • With Built-in Bias Resistors
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RN2110F
RN2111F
RN711
RN7111F
RN1110F,
RN1111F
RN2110F
RN2111F
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RN4609
Abstract: No abstract text available
Text: TOSHIBA RN4609 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4609 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT Unit in mm AND DRIVER CIRCUIT APPLICATIONS. + 0.2 2 .8-0.3 + 0.2 1. 6 - 0.1 • Including Two Devices in SM6 (Super Mini Type with 6 leads)
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RN4609
RN4609
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RN4611
Abstract: No abstract text available
Text: TOSHIBA RN4611 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4611 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. Unit in mm + 0.2 2 .8 -0 .3 + 0.2 1. 6 - 0.1 Including Two Devices in SM6 (Super Mini Type with 6 leads)
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RN4611
RN4611
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN2410,RN2411 TOSHIBA TRANSISTOR SILOCON PNP EPITAXIAL TYPE PCT PROCESS R N 7 A i n g RN7A11 • m ■ v ■ m ■ v ■ ■ ■ SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS • With Built-in Bias Resistors • Simplify Circuit Design
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RN2410
RN2411
RN7A11
RN1410,
RN1411
RN2410
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RN4602
Abstract: No abstract text available
Text: TOSHIBA RN4602 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4602 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. + 0.2 2.8-0.3 + 0.2 1 .6 - 0 .1 Including Two Devices in SM6 (Super Mini Type with 6 leads)
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RN4602
RN4602
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