Untitled
Abstract: No abstract text available
Text: RN2101CT ~ RN2106CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101CT, RN2102CT, RN2103CT RN2104CT, RN2105CT, RN2106CT Switching Applications Inverter Circuit Applications Interface Circuit Applications
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RN2101CT
RN2106CT
RN2101CT,
RN2102CT,
RN2103CT
RN2104CT,
RN2105CT,
RN1101CT
RN1106CT
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN2301-RN2306 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2301, RN2302, RN2303 RN2304, RN2305, RN2306 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS With Built-in Bias Resistors Simplify Circuit Design
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RN2301-RN2306
RN2301,
RN2302,
RN2303
RN2304,
RN2305,
RN2306
RN1301
RN2301
RN2302
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Untitled
Abstract: No abstract text available
Text: RN2110,RN2111 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2110, RN2111 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT 1.6 ±0.2 AND DRIVER CIRCUIT APPLICATIONS. • With Built-in Bias Resistors • Simplify Circuit Design
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RN2110
RN2111
RN2110,
RN1110,
RN1111
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN2001-RN2006 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2001, RN2002, RN2003 RN2004, RN2005, RN2006 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS Unit in mm . 5.1 MAX. • With Built-in Bias Resistors
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RN2001-RN2006
RN2001,
RN2002,
RN2003
RN2004,
RN2005,
RN2006
RN1001
RN1006
RN2001
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nj TRANSISTOR
Abstract: No abstract text available
Text: TOSHIBA RN2107F-RN2109F TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2107F, RN2108F, RN2109F Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • 1.6 ± 0.1 With Built-in Bias Resistors
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RN2107F-RN2109F
RN2107F,
RN2108F,
RN2109F
RN1107F
RN1109F
RN2107F
RN2108F
RN2107F-2109F
nj TRANSISTOR
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RN4605
Abstract: No abstract text available
Text: TOSHIBA RN4605 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4605 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT + 0.2 AND DRIVER CIRCUIT APPLICATIONS. 2.8-0.3 1.6 • • • • + 0.2 -
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RN4605
RN4605
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN2421-RN2427 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2421, RN2422, RN2423, RN2424 RN2425, RN2426, RN2427 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS Unit in mm + 0.5 High Current Type (Iq (M ax.)= _ 800mA)
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RN2421-RN2427
RN2421,
RN2422,
RN2423,
RN2424
RN2425,
RN2426,
RN2427
800mA)
RN1421
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN2407,RN2408,RN2409 TOSHIBA TRANSISTOR SILOCON PNP EPITAXIAL TYPE PCT PROCESS RN2407, RN2408, RN2409 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS + 0.5 • With Built-in Bias Resistors • Simplify Circuit Design
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RN2407
RN2408
RN2409
RN2407,
RN2408,
RN2409
RN1407
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RN2223
Abstract: ko iq
Text: TOSHIBA RN2221-RN2227 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2221, RN2222, RN2223, RN2224 RN2225, RN2226, RN2227 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS Unit in mm 4.2MAX. High Current Type (l£ (MAX)= —800mA)
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RN2221-RN2227
RN2221,
RN2222,
RN2223,
RN2224
RN2225,
RN2226,
RN2227
--800mA)
RN1221
RN2223
ko iq
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RN4603
Abstract: No abstract text available
Text: TOSHIBA RN4603 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4603 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. + 0.2 2.8 -0.3 1.6-0.1 + 0.2 • • • •
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RN4603
RN4603
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transistor 2204
Abstract: No abstract text available
Text: TOSHIBA RN2201-RN2206 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2201, RN2202, RN2203 RN2204, RN2205, RN2206 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS 4.2MAX. • • • • With Built-in Bias Resistors
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RN2201-RN2206
RN2201,
RN2202,
RN2203
RN2204,
RN2205,
RN2206
RN1201
RN1206
RN2201
transistor 2204
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TRANSISTOR MARKING YB
Abstract: RN2901 RN2902 RN2903 RN2904 RN2905 RN2906 TRANSISTOR MARKING TE US6
Text: TOSHIBA RN2901-RN2906 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2901, RN2902, RN2903, RN2904, RN2905, RN2906 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • Including Two Devices in US6 (Ultra Super Mini Type with 6 leads)
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RN2901-RN2906
RN2901,
RN2902,
RN2903,
RN2904,
RN2905,
RN2906
RN1901-RN1906
RN2901
RN2902
TRANSISTOR MARKING YB
RN2903
RN2904
RN2905
RN2906
TRANSISTOR MARKING TE US6
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN2010,RN2011 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2010, RN2011 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS 5.1 M AX. • • • • With Built-in Bias Resistors Simplify Circuit Design
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RN2010
RN2011
RN2010,
RN1010,
RN1011
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN2401,RN2402,RN2403,RN2404,RN2405,RN2406 TOSHIBA TRANSISTOR SILOCON PNP EPITAXIAL TYPE PCT PROCESS RN2401, RN2402, RN2403 RN2404, RN2405, RN2406 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS • W ith Bu ilt- in B ia s Resistors
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RN2401
RN2402
RN2403
RN2404
RN2405
RN2406
RN2401,
RN2402,
RN2403
RN2404,
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LM 1709
Abstract: No abstract text available
Text: TOSHIBA RN2707-RN2709 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2707, RN2708, RN2709 U nit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. 1 .2 5 1 0 .1 -m- » 1 - 1— • t !
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RN2707-RN2709
RN2707,
RN2708,
RN2709
RN2707
RN2708
LM 1709
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN2307-RN2309 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2307, RN2308, RN2309 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS 2.1 ¿ 0.1 • • • • 1.25±0.1 With Built-in Bias Resistors
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RN2307-RN2309
RN2307,
RN2308,
RN2309
RN1307
RN2307
RN2308
SC-70
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN2101F-RN2106F TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2101F, RN2102F, RN2103F RN2104F, RN2105F, RN2106F Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • 1.6 ± 0.1 With Built-in Bias Resistors
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RN2101F-RN2106F
RN2101F,
RN2102F,
RN2103F
RN2104F,
RN2105F,
RN2106F
RN1101F
RN1106F
RN2101F
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RN2507
Abstract: RN2508 RN2509
Text: TOSHIBA R N 2507-R N 2509 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2507, RN2508, RN2509 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • U nit in mm Including Two Devices in SMV (Super Mini Type with 5 leads)
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RN2507-RN2509
RN2507,
RN2508,
RN2509
RN1507-RN1509
RN2507
RN2508
RN2509
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN2310,RN2311 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2310, RN2311 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS • • • • With Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process
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RN2310
RN2311
RN2310,
RN1310,
RN1311
RN2310
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN2412,RN2413 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2412, RN2413 U nit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. + 0.5 2 .5 - 0 .3 • With Built-in Bias Resistors • Sim plify Circuit Design
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RN2412
RN2413
RN2412,
RN1412,
RN1413
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Marking HEB
Abstract: RN2607 RN2608 RN2609
Text: TOSHIBA RN2607-RN2609 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2607, RN2608, RN2609 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. + 0.2 2 .8 -0 .3 + 0.2 1.6-0.1 Including Two Devices in SM6 (Super Mini Type with 6 leads)
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RN2607-RN2609
RN2607,
RN2608,
RN2609
RN1607-RN1609
RN2607
RN2608
RN2609
RN2608
Marking HEB
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Untitled
Abstract: No abstract text available
Text: Tb TOSHIBA {DISCRETE/OPT0> 9097250 TOSHIBA D lf| 1017550 □007331 DISCRETE/OPTO SILICON PNP EPITAXIA L TYPE (PCT PROCESS) _ (DARLINGTON POWER)_ INDUSTRIAL APPLICATIONS Unit in nun SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS.
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN2967-RN2969 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2967, RN2968, RN2969 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. Unit in mm 2.1 ±0.1 1. 2 5 ± 0.1 • Including Two Devices in US6 (Ultra Super Mini Type with 6
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RN2967-RN2969
RN2967,
RN2968,
RN2969
RN1967
RN1969
RN2967
RN2968
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN2110F,RN2111F TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN711Í1F RN7111F • m ■ 'm g ■ m ■ 'm ■ ■ ■ ■■ SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • With Built-in Bias Resistors
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RN2110F
RN2111F
RN711
RN7111F
RN1110F,
RN1111F
RN2110F
RN2111F
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