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    TOSHIBA PNP RN Search Results

    TOSHIBA PNP RN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA PNP RN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: RN2101CT ~ RN2106CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101CT, RN2102CT, RN2103CT RN2104CT, RN2105CT, RN2106CT Switching Applications Inverter Circuit Applications Interface Circuit Applications


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    PDF RN2101CT RN2106CT RN2101CT, RN2102CT, RN2103CT RN2104CT, RN2105CT, RN1101CT RN1106CT

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN2301-RN2306 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2301, RN2302, RN2303 RN2304, RN2305, RN2306 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS With Built-in Bias Resistors Simplify Circuit Design


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    PDF RN2301-RN2306 RN2301, RN2302, RN2303 RN2304, RN2305, RN2306 RN1301 RN2301 RN2302

    Untitled

    Abstract: No abstract text available
    Text: RN2110,RN2111 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2110, RN2111 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT 1.6 ±0.2 AND DRIVER CIRCUIT APPLICATIONS. • With Built-in Bias Resistors • Simplify Circuit Design


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    PDF RN2110 RN2111 RN2110, RN1110, RN1111

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN2001-RN2006 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2001, RN2002, RN2003 RN2004, RN2005, RN2006 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS Unit in mm . 5.1 MAX. • With Built-in Bias Resistors


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    PDF RN2001-RN2006 RN2001, RN2002, RN2003 RN2004, RN2005, RN2006 RN1001 RN1006 RN2001

    nj TRANSISTOR

    Abstract: No abstract text available
    Text: TOSHIBA RN2107F-RN2109F TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2107F, RN2108F, RN2109F Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • 1.6 ± 0.1 With Built-in Bias Resistors


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    PDF RN2107F-RN2109F RN2107F, RN2108F, RN2109F RN1107F RN1109F RN2107F RN2108F RN2107F-2109F nj TRANSISTOR

    RN4605

    Abstract: No abstract text available
    Text: TOSHIBA RN4605 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4605 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT + 0.2 AND DRIVER CIRCUIT APPLICATIONS. 2.8-0.3 1.6 • • • • + 0.2 -


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    PDF RN4605 RN4605

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN2421-RN2427 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2421, RN2422, RN2423, RN2424 RN2425, RN2426, RN2427 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS Unit in mm + 0.5 High Current Type (Iq (M ax.)= _ 800mA)


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    PDF RN2421-RN2427 RN2421, RN2422, RN2423, RN2424 RN2425, RN2426, RN2427 800mA) RN1421

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN2407,RN2408,RN2409 TOSHIBA TRANSISTOR SILOCON PNP EPITAXIAL TYPE PCT PROCESS RN2407, RN2408, RN2409 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS + 0.5 • With Built-in Bias Resistors • Simplify Circuit Design


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    PDF RN2407 RN2408 RN2409 RN2407, RN2408, RN2409 RN1407

    RN2223

    Abstract: ko iq
    Text: TOSHIBA RN2221-RN2227 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2221, RN2222, RN2223, RN2224 RN2225, RN2226, RN2227 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS Unit in mm 4.2MAX. High Current Type (l£ (MAX)= —800mA)


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    PDF RN2221-RN2227 RN2221, RN2222, RN2223, RN2224 RN2225, RN2226, RN2227 --800mA) RN1221 RN2223 ko iq

    RN4603

    Abstract: No abstract text available
    Text: TOSHIBA RN4603 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4603 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. + 0.2 2.8 -0.3 1.6-0.1 + 0.2 • • • •


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    PDF RN4603 RN4603

    transistor 2204

    Abstract: No abstract text available
    Text: TOSHIBA RN2201-RN2206 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2201, RN2202, RN2203 RN2204, RN2205, RN2206 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS 4.2MAX. • • • • With Built-in Bias Resistors


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    PDF RN2201-RN2206 RN2201, RN2202, RN2203 RN2204, RN2205, RN2206 RN1201 RN1206 RN2201 transistor 2204

    TRANSISTOR MARKING YB

    Abstract: RN2901 RN2902 RN2903 RN2904 RN2905 RN2906 TRANSISTOR MARKING TE US6
    Text: TOSHIBA RN2901-RN2906 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2901, RN2902, RN2903, RN2904, RN2905, RN2906 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • Including Two Devices in US6 (Ultra Super Mini Type with 6 leads)


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    PDF RN2901-RN2906 RN2901, RN2902, RN2903, RN2904, RN2905, RN2906 RN1901-RN1906 RN2901 RN2902 TRANSISTOR MARKING YB RN2903 RN2904 RN2905 RN2906 TRANSISTOR MARKING TE US6

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN2010,RN2011 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2010, RN2011 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS 5.1 M AX. • • • • With Built-in Bias Resistors Simplify Circuit Design


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    PDF RN2010 RN2011 RN2010, RN1010, RN1011

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN2401,RN2402,RN2403,RN2404,RN2405,RN2406 TOSHIBA TRANSISTOR SILOCON PNP EPITAXIAL TYPE PCT PROCESS RN2401, RN2402, RN2403 RN2404, RN2405, RN2406 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS • W ith Bu ilt- in B ia s Resistors


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    PDF RN2401 RN2402 RN2403 RN2404 RN2405 RN2406 RN2401, RN2402, RN2403 RN2404,

    LM 1709

    Abstract: No abstract text available
    Text: TOSHIBA RN2707-RN2709 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2707, RN2708, RN2709 U nit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. 1 .2 5 1 0 .1 -m- » 1 - 1— • t !


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    PDF RN2707-RN2709 RN2707, RN2708, RN2709 RN2707 RN2708 LM 1709

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN2307-RN2309 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2307, RN2308, RN2309 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS 2.1 ¿ 0.1 • • • • 1.25±0.1 With Built-in Bias Resistors


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    PDF RN2307-RN2309 RN2307, RN2308, RN2309 RN1307 RN2307 RN2308 SC-70

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN2101F-RN2106F TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2101F, RN2102F, RN2103F RN2104F, RN2105F, RN2106F Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • 1.6 ± 0.1 With Built-in Bias Resistors


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    PDF RN2101F-RN2106F RN2101F, RN2102F, RN2103F RN2104F, RN2105F, RN2106F RN1101F RN1106F RN2101F

    RN2507

    Abstract: RN2508 RN2509
    Text: TOSHIBA R N 2507-R N 2509 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2507, RN2508, RN2509 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • U nit in mm Including Two Devices in SMV (Super Mini Type with 5 leads)


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    PDF RN2507-RN2509 RN2507, RN2508, RN2509 RN1507-RN1509 RN2507 RN2508 RN2509

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN2310,RN2311 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2310, RN2311 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS • • • • With Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process


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    PDF RN2310 RN2311 RN2310, RN1310, RN1311 RN2310

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN2412,RN2413 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2412, RN2413 U nit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. + 0.5 2 .5 - 0 .3 • With Built-in Bias Resistors • Sim plify Circuit Design


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    PDF RN2412 RN2413 RN2412, RN1412, RN1413

    Marking HEB

    Abstract: RN2607 RN2608 RN2609
    Text: TOSHIBA RN2607-RN2609 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2607, RN2608, RN2609 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. + 0.2 2 .8 -0 .3 + 0.2 1.6-0.1 Including Two Devices in SM6 (Super Mini Type with 6 leads)


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    PDF RN2607-RN2609 RN2607, RN2608, RN2609 RN1607-RN1609 RN2607 RN2608 RN2609 RN2608 Marking HEB

    Untitled

    Abstract: No abstract text available
    Text: Tb TOSHIBA {DISCRETE/OPT0> 9097250 TOSHIBA D lf| 1017550 □007331 DISCRETE/OPTO SILICON PNP EPITAXIA L TYPE (PCT PROCESS) _ (DARLINGTON POWER)_ INDUSTRIAL APPLICATIONS Unit in nun SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS.


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    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN2967-RN2969 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2967, RN2968, RN2969 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. Unit in mm 2.1 ±0.1 1. 2 5 ± 0.1 • Including Two Devices in US6 (Ultra Super Mini Type with 6


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    PDF RN2967-RN2969 RN2967, RN2968, RN2969 RN1967 RN1969 RN2967 RN2968

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN2110F,RN2111F TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN711Í1F RN7111F • m ■ 'm g ■ m ■ 'm ■ ■ ■ ■■ SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • With Built-in Bias Resistors


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    PDF RN2110F RN2111F RN711 RN7111F RN1110F, RN1111F RN2110F RN2111F