Untitled
Abstract: No abstract text available
Text: RN2101CT ~ RN2106CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101CT, RN2102CT, RN2103CT RN2104CT, RN2105CT, RN2106CT Switching Applications Inverter Circuit Applications Interface Circuit Applications
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RN2101CT
RN2106CT
RN2101CT,
RN2102CT,
RN2103CT
RN2104CT,
RN2105CT,
RN1101CT
RN1106CT
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RN1110ACT
Abstract: RN1111ACT RN2110ACT RN2111ACT
Text: RN2110ACT,RN2111ACT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2110ACT,RN2111ACT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm
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RN2110ACT
RN2111ACT
RN1110ACT,
RN1111ACT
RN1110ACT
RN1111ACT
RN2111ACT
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RN2112ACT
Abstract: RN2113ACT
Text: RN2112ACT,RN2113ACT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN2112ACT,RN2113ACT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm
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RN2112ACT
RN2113ACT
RN1112CT,
RN1113CT
RN2113ACT
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RN1101ACT
Abstract: RN1106ACT RN2101ACT RN2102ACT RN2103ACT RN2104ACT RN2105ACT RN2106ACT 1D43
Text: RN2101ACT ~ RN2106ACT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101ACT,RN2102ACT,RN2103ACT RN2104ACT,RN2105ACT,RN2106ACT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
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RN2101ACT
RN2106ACT
RN2101ACT
RN2102ACT
RN2103ACT
RN2104ACT
RN2105ACT
RN1101ACT
RN1106ACT
RN1106ACT
RN2103ACT
RN2106ACT
1D43
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Untitled
Abstract: No abstract text available
Text: RN2112ACT,RN2113ACT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN2112ACT, RN2113ACT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm
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RN2112ACT
RN2113ACT
RN2112ACT,
RN1112CT,
RN1113CT
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RN1901AFS
Abstract: RN2901AFS RN2902AFS RN2903AFS RN2904AFS RN2905AFS RN2906AFS
Text: RN2901AFS~RN2906AFS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Transistor with Built-in Bias Resistor) RN2901AFS, RN2902AFS, RN2903AFS RN2904AFS, RN2905AFS, RN2906AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
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RN2901AFS
RN2906AFS
RN2901AFS,
RN2902AFS,
RN2903AFS
RN2904AFS,
RN2905AFS,
RN2902AFS
RN1901AFS
RN2902AFS
RN2903AFS
RN2904AFS
RN2905AFS
RN2906AFS
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Untitled
Abstract: No abstract text available
Text: RN2110CT,RN2111CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2110CT,RN2111CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications 0.65±0.02 3
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RN2110CT
RN2111CT
RN1110CT,
RN1111CT
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Untitled
Abstract: No abstract text available
Text: RN2107CT ~ RN2109CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2107CT,RN2108CT,RN2109CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm
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RN2107CT
RN2109CT
RN2107CT
RN2108CT
RN1107CT
RN1109CT
RN2108CT
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RN1101FS
Abstract: RN1106FS RN2101FS RN2102FS RN2103FS RN2104FS RN2105FS RN2106FS
Text: RN2101FS~RN2106FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101FS,RN2102FS,RN2103FS RN2104FS,RN2105FS,RN2106FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm
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RN2101FS
RN2106FS
RN2102FS
RN2103FS
RN2104FS
RN2105FS
RN1101FS
RN1106FS
RN1106FS
RN2103FS
RN2106FS
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Untitled
Abstract: No abstract text available
Text: RN2101CT ~ RN2106CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101CT,RN2102CT,RN2103CT RN2104CT,RN2105CT,RN2106CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications
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RN2101CT
RN2106CT
RN2101CT
RN2102CT
RN2103CT
RN2104CT
RN2105CT
RN1101CT
RN1106CT
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Untitled
Abstract: No abstract text available
Text: RN2701JE~RN2706JE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2701JE,RN2702JE,RN2703JE RN2704JE,RN2705JE,RN2706JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm
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RN2701JE
RN2706JE
RN2702JE
RN2703JE
RN2704JE
RN2705JE
RN1701JE
RN1706JE
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN2001-RN2006 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2001, RN2002, RN2003 RN2004, RN2005, RN2006 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS Unit in mm . 5.1 MAX. • With Built-in Bias Resistors
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RN2001-RN2006
RN2001,
RN2002,
RN2003
RN2004,
RN2005,
RN2006
RN1001
RN1006
RN2001
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RN2223
Abstract: ko iq
Text: TOSHIBA RN2221-RN2227 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2221, RN2222, RN2223, RN2224 RN2225, RN2226, RN2227 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS Unit in mm 4.2MAX. High Current Type (l£ (MAX)= —800mA)
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RN2221-RN2227
RN2221,
RN2222,
RN2223,
RN2224
RN2225,
RN2226,
RN2227
--800mA)
RN1221
RN2223
ko iq
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transistor 2204
Abstract: No abstract text available
Text: TOSHIBA RN2201-RN2206 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2201, RN2202, RN2203 RN2204, RN2205, RN2206 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS 4.2MAX. • • • • With Built-in Bias Resistors
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RN2201-RN2206
RN2201,
RN2202,
RN2203
RN2204,
RN2205,
RN2206
RN1201
RN1206
RN2201
transistor 2204
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LM 1709
Abstract: No abstract text available
Text: TOSHIBA RN2707-RN2709 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2707, RN2708, RN2709 U nit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. 1 .2 5 1 0 .1 -m- » 1 - 1— • t !
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RN2707-RN2709
RN2707,
RN2708,
RN2709
RN2707
RN2708
LM 1709
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN2101F-RN2106F TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2101F, RN2102F, RN2103F RN2104F, RN2105F, RN2106F Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • 1.6 ± 0.1 With Built-in Bias Resistors
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RN2101F-RN2106F
RN2101F,
RN2102F,
RN2103F
RN2104F,
RN2105F,
RN2106F
RN1101F
RN1106F
RN2101F
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN2310,RN2311 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2310, RN2311 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS • • • • With Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process
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RN2310
RN2311
RN2310,
RN1310,
RN1311
RN2310
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN2412,RN2413 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2412, RN2413 U nit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. + 0.5 2 .5 - 0 .3 • With Built-in Bias Resistors • Sim plify Circuit Design
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RN2412
RN2413
RN2412,
RN1412,
RN1413
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Marking HEB
Abstract: RN2607 RN2608 RN2609
Text: TOSHIBA RN2607-RN2609 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2607, RN2608, RN2609 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. + 0.2 2 .8 -0 .3 + 0.2 1.6-0.1 Including Two Devices in SM6 (Super Mini Type with 6 leads)
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RN2607-RN2609
RN2607,
RN2608,
RN2609
RN1607-RN1609
RN2607
RN2608
RN2609
RN2608
Marking HEB
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Untitled
Abstract: No abstract text available
Text: Tb TOSHIBA {DISCRETE/OPT0> 9097250 TOSHIBA D lf| 1017550 □007331 DISCRETE/OPTO SILICON PNP EPITAXIA L TYPE (PCT PROCESS) _ (DARLINGTON POWER)_ INDUSTRIAL APPLICATIONS Unit in nun SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS.
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN2110F,RN2111F TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN711Í1F RN7111F • m ■ 'm g ■ m ■ 'm ■ ■ ■ ■■ SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • With Built-in Bias Resistors
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RN2110F
RN2111F
RN711
RN7111F
RN1110F,
RN1111F
RN2110F
RN2111F
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RN4611
Abstract: No abstract text available
Text: TOSHIBA RN4611 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4611 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. Unit in mm + 0.2 2 .8 -0 .3 + 0.2 1. 6 - 0.1 Including Two Devices in SM6 (Super Mini Type with 6 leads)
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RN4611
RN4611
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN2410,RN2411 TOSHIBA TRANSISTOR SILOCON PNP EPITAXIAL TYPE PCT PROCESS R N 7 A i n g RN7A11 • m ■ v ■ m ■ v ■ ■ ■ SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS • With Built-in Bias Resistors • Simplify Circuit Design
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RN2410
RN2411
RN7A11
RN1410,
RN1411
RN2410
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RN4602
Abstract: No abstract text available
Text: TOSHIBA RN4602 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4602 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. + 0.2 2.8-0.3 + 0.2 1 .6 - 0 .1 Including Two Devices in SM6 (Super Mini Type with 6 leads)
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RN4602
RN4602
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