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    TOSHIBA PNP RN Search Results

    TOSHIBA PNP RN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA PNP RN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: RN2101CT ~ RN2106CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101CT, RN2102CT, RN2103CT RN2104CT, RN2105CT, RN2106CT Switching Applications Inverter Circuit Applications Interface Circuit Applications


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    PDF RN2101CT RN2106CT RN2101CT, RN2102CT, RN2103CT RN2104CT, RN2105CT, RN1101CT RN1106CT

    RN1110ACT

    Abstract: RN1111ACT RN2110ACT RN2111ACT
    Text: RN2110ACT,RN2111ACT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2110ACT,RN2111ACT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm


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    PDF RN2110ACT RN2111ACT RN1110ACT, RN1111ACT RN1110ACT RN1111ACT RN2111ACT

    RN2112ACT

    Abstract: RN2113ACT
    Text: RN2112ACT,RN2113ACT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN2112ACT,RN2113ACT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm


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    PDF RN2112ACT RN2113ACT RN1112CT, RN1113CT RN2113ACT

    RN1101ACT

    Abstract: RN1106ACT RN2101ACT RN2102ACT RN2103ACT RN2104ACT RN2105ACT RN2106ACT 1D43
    Text: RN2101ACT ~ RN2106ACT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101ACT,RN2102ACT,RN2103ACT RN2104ACT,RN2105ACT,RN2106ACT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications


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    PDF RN2101ACT RN2106ACT RN2101ACT RN2102ACT RN2103ACT RN2104ACT RN2105ACT RN1101ACT RN1106ACT RN1106ACT RN2103ACT RN2106ACT 1D43

    Untitled

    Abstract: No abstract text available
    Text: RN2112ACT,RN2113ACT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN2112ACT, RN2113ACT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm


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    PDF RN2112ACT RN2113ACT RN2112ACT, RN1112CT, RN1113CT

    RN1901AFS

    Abstract: RN2901AFS RN2902AFS RN2903AFS RN2904AFS RN2905AFS RN2906AFS
    Text: RN2901AFS~RN2906AFS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Transistor with Built-in Bias Resistor) RN2901AFS, RN2902AFS, RN2903AFS RN2904AFS, RN2905AFS, RN2906AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications


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    PDF RN2901AFS RN2906AFS RN2901AFS, RN2902AFS, RN2903AFS RN2904AFS, RN2905AFS, RN2902AFS RN1901AFS RN2902AFS RN2903AFS RN2904AFS RN2905AFS RN2906AFS

    Untitled

    Abstract: No abstract text available
    Text: RN2110CT,RN2111CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2110CT,RN2111CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications 0.65±0.02 3


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    PDF RN2110CT RN2111CT RN1110CT, RN1111CT

    Untitled

    Abstract: No abstract text available
    Text: RN2107CT ~ RN2109CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2107CT,RN2108CT,RN2109CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm


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    PDF RN2107CT RN2109CT RN2107CT RN2108CT RN1107CT RN1109CT RN2108CT

    RN1101FS

    Abstract: RN1106FS RN2101FS RN2102FS RN2103FS RN2104FS RN2105FS RN2106FS
    Text: RN2101FS~RN2106FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101FS,RN2102FS,RN2103FS RN2104FS,RN2105FS,RN2106FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm


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    PDF RN2101FS RN2106FS RN2102FS RN2103FS RN2104FS RN2105FS RN1101FS RN1106FS RN1106FS RN2103FS RN2106FS

    Untitled

    Abstract: No abstract text available
    Text: RN2101CT ~ RN2106CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101CT,RN2102CT,RN2103CT RN2104CT,RN2105CT,RN2106CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications


    Original
    PDF RN2101CT RN2106CT RN2101CT RN2102CT RN2103CT RN2104CT RN2105CT RN1101CT RN1106CT

    Untitled

    Abstract: No abstract text available
    Text: RN2701JE~RN2706JE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2701JE,RN2702JE,RN2703JE RN2704JE,RN2705JE,RN2706JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm


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    PDF RN2701JE RN2706JE RN2702JE RN2703JE RN2704JE RN2705JE RN1701JE RN1706JE

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN2001-RN2006 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2001, RN2002, RN2003 RN2004, RN2005, RN2006 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS Unit in mm . 5.1 MAX. • With Built-in Bias Resistors


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    PDF RN2001-RN2006 RN2001, RN2002, RN2003 RN2004, RN2005, RN2006 RN1001 RN1006 RN2001

    RN2223

    Abstract: ko iq
    Text: TOSHIBA RN2221-RN2227 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2221, RN2222, RN2223, RN2224 RN2225, RN2226, RN2227 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS Unit in mm 4.2MAX. High Current Type (l£ (MAX)= —800mA)


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    PDF RN2221-RN2227 RN2221, RN2222, RN2223, RN2224 RN2225, RN2226, RN2227 --800mA) RN1221 RN2223 ko iq

    transistor 2204

    Abstract: No abstract text available
    Text: TOSHIBA RN2201-RN2206 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2201, RN2202, RN2203 RN2204, RN2205, RN2206 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS 4.2MAX. • • • • With Built-in Bias Resistors


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    PDF RN2201-RN2206 RN2201, RN2202, RN2203 RN2204, RN2205, RN2206 RN1201 RN1206 RN2201 transistor 2204

    LM 1709

    Abstract: No abstract text available
    Text: TOSHIBA RN2707-RN2709 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2707, RN2708, RN2709 U nit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. 1 .2 5 1 0 .1 -m- » 1 - 1— • t !


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    PDF RN2707-RN2709 RN2707, RN2708, RN2709 RN2707 RN2708 LM 1709

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN2101F-RN2106F TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2101F, RN2102F, RN2103F RN2104F, RN2105F, RN2106F Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • 1.6 ± 0.1 With Built-in Bias Resistors


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    PDF RN2101F-RN2106F RN2101F, RN2102F, RN2103F RN2104F, RN2105F, RN2106F RN1101F RN1106F RN2101F

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN2310,RN2311 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2310, RN2311 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS • • • • With Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process


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    PDF RN2310 RN2311 RN2310, RN1310, RN1311 RN2310

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN2412,RN2413 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2412, RN2413 U nit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. + 0.5 2 .5 - 0 .3 • With Built-in Bias Resistors • Sim plify Circuit Design


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    PDF RN2412 RN2413 RN2412, RN1412, RN1413

    Marking HEB

    Abstract: RN2607 RN2608 RN2609
    Text: TOSHIBA RN2607-RN2609 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2607, RN2608, RN2609 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. + 0.2 2 .8 -0 .3 + 0.2 1.6-0.1 Including Two Devices in SM6 (Super Mini Type with 6 leads)


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    PDF RN2607-RN2609 RN2607, RN2608, RN2609 RN1607-RN1609 RN2607 RN2608 RN2609 RN2608 Marking HEB

    Untitled

    Abstract: No abstract text available
    Text: Tb TOSHIBA {DISCRETE/OPT0> 9097250 TOSHIBA D lf| 1017550 □007331 DISCRETE/OPTO SILICON PNP EPITAXIA L TYPE (PCT PROCESS) _ (DARLINGTON POWER)_ INDUSTRIAL APPLICATIONS Unit in nun SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS.


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN2110F,RN2111F TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN711Í1F RN7111F • m ■ 'm g ■ m ■ 'm ■ ■ ■ ■■ SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • With Built-in Bias Resistors


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    PDF RN2110F RN2111F RN711 RN7111F RN1110F, RN1111F RN2110F RN2111F

    RN4611

    Abstract: No abstract text available
    Text: TOSHIBA RN4611 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4611 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. Unit in mm + 0.2 2 .8 -0 .3 + 0.2 1. 6 - 0.1 Including Two Devices in SM6 (Super Mini Type with 6 leads)


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    PDF RN4611 RN4611

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN2410,RN2411 TOSHIBA TRANSISTOR SILOCON PNP EPITAXIAL TYPE PCT PROCESS R N 7 A i n g RN7A11 • m ■ v ■ m ■ v ■ ■ ■ SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS • With Built-in Bias Resistors • Simplify Circuit Design


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    PDF RN2410 RN2411 RN7A11 RN1410, RN1411 RN2410

    RN4602

    Abstract: No abstract text available
    Text: TOSHIBA RN4602 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4602 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. + 0.2 2.8-0.3 + 0.2 1 .6 - 0 .1 Including Two Devices in SM6 (Super Mini Type with 6 leads)


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    PDF RN4602 RN4602