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    TOSHIBA MARKING MC Search Results

    TOSHIBA MARKING MC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA MARKING MC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TA4500F TOSHIBA Bipolar Linear Integrated Circuit SiGe Monolithic TA4500F 1.9 GHz Band RX Fronted IC PHS, Digital Cordless Telecommunication Applications Features • Low-noise amplifier / down-conversion mixer • Integrated local buffer amplifier • Single positive power supply: VCC = 3.0 V


    Original     		PDF TA4500F

    MURATA GRM15

    Abstract: No abstract text available
    Text: TA4500F TOSHIBA Bipolar Linear Integrated Circuit SiGe Monolithic TA4500F 1.9 GHz Band RX Front-End IC PHS, Digital Cordless Telecommunication Applications Features • Low-noise amplifier / down-conversion mixer • Integrated local buffer amplifier • Single positive power supply: VCC = 3.0 V


    Original     		PDF TA4500F MURATA GRM15

    Untitled

    Abstract: No abstract text available
    Text: GT10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10G131 Strobe Flash Applications Unit: mm • 5th generation trench gate structure IGBT • Enhancement-mode • 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 200 A) • Peak collector current: IC = 200 A (max)


    Original     		PDF GT10G131

    Untitled

    Abstract: No abstract text available
    Text: TPCF8003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSⅣ TPCF8003 Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) =14 mΩ (typ.)


    Original     		PDF TPCF8003

    SAFDA243MRD

    Abstract: SAFDA243MRD9X00R00 9006 MCR01 TA4500F SAFDA243MRD9X00 SAFDA SAFDA243
    Text: TA4500F TOSHIBA Bipolar Linear Integrated Circuit SiGe Monolithic TA4500F 1.9 GHz Band RX Front-End IC PHS, Digital Cordless Telecommunication Applications Features • Low-noise amplifier / down-conversion mixer • Integrated local buffer amplifier • Single positive power supply: VCC = 3.0 V


    Original     		PDF TA4500F SAFDA243MRD SAFDA243MRD9X00R00 9006 MCR01 TA4500F SAFDA243MRD9X00 SAFDA SAFDA243

    10G131

    Abstract: No abstract text available
    Text: GT10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10G131 Strobe Flash Applications Unit: mm • 5th generation trench gate structure IGBT • Enhancement-mode • 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 200 A) • Peak collector current: IC = 200 A (max)


    Original     		PDF GT10G131 10G131

    Untitled

    Abstract: No abstract text available
    Text: TPC6012 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSⅣ TPC6012 Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 20 mΩ (typ.)


    Original     		PDF TPC6012

    PW-Mold

    Abstract: No abstract text available
    Text: TTC012 Bipolar Transistors Silicon NPN Triple-Diffused Type TTC012 1. Applications • High-Speed High-Voltage Switching • Switching Voltage Regulators • High-Speed DC-DC Converters 2. Features 1 High speed switching : tf = 0.15 µs (typ.) (IC = 0.5 A)


    Original     		PDF TTC012 PW-Mold

    Untitled

    Abstract: No abstract text available
    Text: GT10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10G131 Strobe Flash Applications Unit: mm • 5th generation trench gate structure IGBT • Enhancement-mode • 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 200 A) • Peak collector current: IC = 200 A (max)


    Original     		PDF GT10G131

    TTA005

    Abstract: No abstract text available
    Text: TTA005 Bipolar Transistors Silicon PNP Epitaxial Type TTA005 1. Applications • High-Speed Switching • DC-DC Converters 2. Features 1 High DC current gain: hFE = 200 to 500 (IC = -0.5 A) (2) Low collector saturation voltage: VCE(sat) = -0.27 V (max) (IC = -1.6 A, IB = -53 mA)


    Original     		PDF TTA005 TTA005

    Untitled

    Abstract: No abstract text available
    Text: TTA005 Bipolar Transistors Silicon PNP Epitaxial Type TTA005 1. Applications • High-Speed Switching • DC-DC Converters 2. Features 1 High DC current gain: hFE = 200 to 500 (IC = -0.5 A) (2) Low collector saturation voltage: VCE(sat) = -0.27 V (max) (IC = -1.6 A, IB = -53 mA)


    Original     		PDF TTA005

    Untitled

    Abstract: No abstract text available
    Text: TTC008 Bipolar Transistors Silicon NPN Triple-Diffused Type TTC008 1. Applications • High-Speed High-Voltage Switching • Switching Voltage Regulators • High-Speed DC-DC Converters 2. Features 1 High collector-emitter voltage: VCEO = 285 V, VCES = 600 V


    Original     		PDF TTC008

    Untitled

    Abstract: No abstract text available
    Text: TPC6110 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅥ TPC6110 Power Management Switch Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 43 mΩ (typ.) • Low leakage current: IDSS = −10 A (max) (VDS = −30 V)


    Original     		PDF TPC6110

    Untitled

    Abstract: No abstract text available
    Text: TPC6011 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV TPC6011 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 16 mΩ (typ.) • Low leakage current: IDSS = 10 A (max) (VDS = 30 V)


    Original     		PDF TPC6011

    TPCF8002

    Abstract: No abstract text available
    Text: TPCF8002 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOS Ⅳ TPCF8002 Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to a small and thin package • Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)


    Original     		PDF TPCF8002 TPCF8002

    TPCF8003

    Abstract: No abstract text available
    Text: TPCF8003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSⅣ TPCF8003 Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) =14 mΩ (typ.)


    Original     		PDF TPCF8003 TPCF8003

    Untitled

    Abstract: No abstract text available
    Text: TTC014 Bipolar Transistors Silicon NPN Triple-Diffused Type TTC014 1. Applications • High-Speed High-Voltage Switching • Switching Voltage Regulators • High-Speed DC-DC Converters 2. Features 1 High DC current gain : hFE = 100 to 200 (IC = 0.1 A) (2)


    Original     		PDF TTC014

    Untitled

    Abstract: No abstract text available
    Text: TA76431S TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA76431S Adjustable Precision Shunt Regulator Features z Precision reference voltage: VREF = 2.495 V ± 2.2% z Small temperature coefficient: |αVREF| = 46 ppm/°C z Adjustable output voltage: VREF ≤ VOUT ≤ 36 V


    Original     		PDF TA76431S

    ttC014

    Abstract: No abstract text available
    Text: TTC014 Bipolar Transistors Silicon NPN Triple-Diffused Type TTC014 1. Applications • High-Speed High-Voltage Switching • Switching Voltage Regulators • High-Speed DC-DC Converters 2. Features 1 High DC current gain : hFE = 100 to 200 (IC = 0.1 A) (2)


    Original     		PDF TTC014 ttC014

    GT20J121

    Abstract: gt20j1
    Text: GT20J121 Discrete IGBTs Silicon N-Channel IGBT GT20J121 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications • Dedicated to Partial-Switching Power Factor Correction PFC Applications Note: The product(s) described herein should not be used for any other application.


    Original     		PDF GT20J121 O-220SIS GT20J121 gt20j1

    Untitled

    Abstract: No abstract text available
    Text: TPCF8003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOS TPCF8003 Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) =14 m •


    Original     		PDF TPCF8003

    Untitled

    Abstract: No abstract text available
    Text: TPC6111 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSV TPC6111 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 33 mΩ (typ.) • Low leakage current: IDSS = −10 A (max) (VDS = −20 V)


    Original     		PDF TPC6111

    TA76431S

    Abstract: ta76 ta76 "pin compatible" LSTM ta76*431s ta76 431s
    Text: TA76431S TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA76431S Adjustable Precision Shunt Regulator Features z Precision reference voltage: VREF = 2.495 V ± 2.2% z Small temperature coefficient: |αVREF| = 46 ppm/°C z Adjustable output voltage: VREF ≤ VOUT ≤ 36 V


    Original     		PDF TA76431S TA76431S ta76 ta76 "pin compatible" LSTM ta76*431s ta76 431s

    431s

    Abstract: ta76 ta76 ic TA76431S TA76431S equivalent
    Text: TA76431S TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA76431S Adjustable Precision Shunt Regulator Features z Precision reference voltage: VREF = 2.495 V ± 2.2% z Small temperature coefficient: |αVREF| = 46 ppm/°C z Adjustable output voltage: VREF ≤ VOUT ≤ 36 V


    Original     		PDF TA76431S 431s ta76 ta76 ic TA76431S TA76431S equivalent