k3314
Abstract: 2SK3314
Text: 2SK3314 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3314 Chopper Regulator and DC−DC Converter Applications Motor Drive Applications Fast reverse recovery time Unit: mm : trr = 105 ns (typ.) Built-in high-speed free-wheeling diode
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2SK3314
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K3316
Abstract: 2SK3316
Text: 2SK3316 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3316 Switching Regulator Applications z Fast reverse recovery time Unit: mm : trr = 60 ns (typ.) z Built-in high-speed free-wheeling diode z Low drain−source ON resistance
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2SK3316
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K3316
Abstract: 2SK3316
Text: 2SK3316 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3316 Switching Regulator Applications z Fast reverse recovery time Unit: mm : trr = 60 ns (typ.) z Built-in high-speed free-wheeling diode z Low drain−source ON resistance
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2SK3316
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k3316
Abstract: 2SK3316
Text: 2SK3316 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3316 Switching Regulator Applications z Fast reverse recovery time Unit: mm : trr = 60 ns (typ.) z Built-in high-speed free-wheeling diode z Low drain−source ON resistance
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2SK3316
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k3314
Abstract: 2SK3314
Text: 2SK3314 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3314 Chopper Regulator and DC−DC Converter Applications Motor Drive Applications z Fast reverse recovery time Unit: mm : trr = 105 ns (typ.) z Built-in high-speed free-wheeling diode
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2SK3314
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2SK3314
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K3313
Abstract: 2SK3313
Text: 2SK3313 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3313 Chopper Regulator and DC−DC Converter Applications Motor Drive Applications z Fast reverse recovery time Unit: mm : trr = 90 ns (typ.) z Built-in high-speed free-wheeling diode
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2SK3313
K3313
2SK3313
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Untitled
Abstract: No abstract text available
Text: MP6757 TOSHIBA GTR Module Silicon N Channel IGBT MP6757 High Power Switching Applications Motor Control Applications Unit: mm • The electrodes are isolated from case. • 6 IGBTs are 6 free wheeling diodes are built into 1 package. • Enhancement-mode •
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MP6757
2-78A1A
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k3316
Abstract: 2sk3316
Text: 2SK3316 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3316 Switching Regulator Applications Fast reverse recovery time Unit: mm : trr = 60 ns (typ.) Built-in high-speed free-wheeling diode Low drain−source ON resistance : RDS (ON) = 1.6 Ω (typ.)
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2SK3316
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k3314
Abstract: 2SK3314
Text: 2SK3314 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3314 Chopper Regulator and DC−DC Converter Applications Motor Drive Applications z Fast reverse recovery time Unit: mm : trr = 105 ns (typ.) z Built-in high-speed free-wheeling diode
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2SK3314
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k3314
Abstract: No abstract text available
Text: 2SK3314 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3314 Chopper Regulator and DC−DC Converter Applications Motor Drive Applications z Fast reverse recovery time Unit: mm : trr = 105 ns (typ.) z Built-in high-speed free-wheeling diode
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2SK3314
15HIBA
k3314
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K3314
Abstract: 2SK3314
Text: 2SK3314 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3314 Chopper Regulator and DC−DC Converter Applications Motor Drive Applications z Fast reverse recovery time Unit: mm : trr = 105 ns (typ.) z Built-in high-speed free-wheeling diode
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2SK3314
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k3313
Abstract: 2SK3313
Text: 2SK3313 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3313 Chopper Regulator and DC−DC Converter Applications Motor Drive Applications z Fast reverse recovery time Unit: mm : trr = 90 ns (typ.) z Built-in high-speed free-wheeling diode
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2SK3131
Abstract: TRANSISTOR 2sk3131
Text: 2SK3131 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3131 Chopper Regulator DC−DC Converter and Motor Drive Applications Fast reverse recovery time Unit: mm : trr = 105 ns (typ.) Built-in high-speed free-wheeling diode Low drain−source ON resistance
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2SK3131
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2SK3131
Abstract: No abstract text available
Text: 2SK3131 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3131 Chopper Regulator DC−DC Converter and Motor Drive Applications z Fast reverse recovery time Unit: mm : trr = 105 ns (typ.) z Built-in high-speed free-wheeling diode z Low drain−source ON resistance
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2SK3131
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2SK3131
Abstract: No abstract text available
Text: 2SK3131 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3131 Chopper Regulator DC−DC Converter and Motor Drive Applications z Fast reverse recovery time Unit: mm : trr = 105 ns (typ.) z Built-in high-speed free-wheeling diode z Low drain−source ON resistance
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2SK3131
15HIBA
2SK3131
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2SK3131
Abstract: No abstract text available
Text: 2SK3131 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3131 Chopper Regulator DC−DC Converter and Motor Drive Applications z Fast reverse recovery time Unit: mm : trr = 105 ns (typ.) z Built-in high-speed free-wheeling diode z Low drain−source ON resistance
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2SK3131
2SK3131
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Untitled
Abstract: No abstract text available
Text: MP6757 TOSHIBA GTR Module Silicon N Channel IGBT MP6757 High Power Switching Applications Motor Control Applications Unit: mm • The electrodes are isolated from case. · 6 IGBTs are 6 free wheeling diodes are built into 1 package. · Enhancement-mode · High speed : tf = 0.35 µs max (IC = 25 A)
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MP6757
2-78A1A
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TA8323F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MULTI CHIP TA 8 323 F LOW SATURATION VOLTAGE DRIVER FOR MOTOR TA8323F is Multi Chip 1C incorporates 6 low saturation discrete transistors which equipped bias resistor and free wheeling diode.
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OCR Scan
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TA8323F
TA8323F
SSOP16
RN5006)
RN6006)
MFP-16
SSOP16-P-225-1
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MG30G6EL2
Abstract: EGA-HG30G6EL2-1 TOSHIBA bat dt60A toshiba free wheeling diode
Text: TOSHIBA SEMICONDUCTOR TOSHIBA GTR MODULE MG30G6EL2 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES! . The Collector is Isolation from Case. . 6 Power Transistors and 6 Free Wheeling Diodes are Built Into 1 Package.
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OCR Scan
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MG30G6EL2
IC-30A)
12-FABTOH-TAB
2-72A2A
EGA-HG30G6EL2-1
MG30G6EL2
Ta-25
EGA-MG30G6EL2-3
TOSHIBA bat
dt60A
toshiba free wheeling diode
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MP6757 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MP6757 Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 05.7 ± 0.2 • The electrodes are isolated from case. • 6 IGBTs are 6 free wheeling diodes are built into 1 package.
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OCR Scan
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MP6757
2-78A1A
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K2525
Abstract: TA8323 RN5006 RN6006 SSOP16 TA8323F
Text: TO SH IBA TENTATIVE TA8323F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MULTI CHIP TA8323F LOW SATURATION VOLTAGE DRIVER FOR MOTOR TA8323F is Multi Chip 1C incorporates 6 low saturation discrete transistors which equipped bias resistor and free wheeling diode.
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OCR Scan
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TA8323F
TA8323F
SSOP16
K2525
TA8323
RN5006
RN6006
SSOP16
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MG300M1FK1
Abstract: DIODE S3L DIODE TP S3L
Text: T O SH IB A TOSHIBA GTR MODULE SEMICONDUCTOR MG300M1FK1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 2-M6 FEATURES: . The Collector is Isolated from Case . With Built-in Free Wheeling Diode
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OCR Scan
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MP6757
Abstract: 2-78a1a VQE 12 44G1
Text: TO SH IBA MP6757 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MP6757 Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 05.7 ±0.2 The electrodes are isolated from case. 6 IGBTs are 6 free wheeling diodes are built intu 1 package. Enhancement-mode
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OCR Scan
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MP6757
2-78A1A
MP6757
2-78a1a
VQE 12
44G1
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MG50M2CK1
Abstract: EGA-MG50M2CK1-1
Text: TOSHIBA GTR MODULE TOSHIBA SEMICONDUCTOR MG50M2CK1 SILICON NPN TRIPLE DIFFUSED TYPE TECH N ICA L DATA HIGH POWER S W I T C H I N G APPLICATIONS. M O T O R CONT O R L APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling
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OCR Scan
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MG50M2CK1
EGA-MG50M2CK1-4)
MG50M2CK1
EGA-MG50M2CK1-1
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