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    TOSHIBA B1495 Search Results

    TOSHIBA B1495 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA B1495 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: 2SB1495 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1495 High-Power Switching Applications Unit: mm • High DC current gain: hFE = 2000 min (VCE = −2 V, IC = −2 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −1.5 A) • Complementary to 2SD2257


    Original     		PDF 2SB1495 2SD2257

    b1495

    Abstract: 2SB1495 2SD2257
    Text: 2SB1495 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1495 High-Power Switching Applications Unit: mm • High DC current gain: hFE = 2000 min (VCE = −2 V, IC = −2 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −1.5 A) • Complementary to 2SD2257


    Original     		PDF 2SB1495 2SD2257 b1495 2SB1495 2SD2257

    B1495

    Abstract: 2SB1495 2SD2257
    Text: 2SB1495 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1495 High-Power Switching Applications Unit: mm • High DC current gain: hFE = 2000 min (VCE = −2 V, IC = −2 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −1.5 A) • Complementary to 2SD2257


    Original     		PDF 2SB1495 2SD2257 B1495 2SB1495 2SD2257

    toshiba b1495

    Abstract: No abstract text available
    Text: 2SB1495 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1495 High-Power Switching Applications Unit: mm • High DC current gain: hFE = 2000 min (VCE = −2 V, IC = −2 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −1.5 A) • Complementary to 2SD2257


    Original     		PDF 2SB1495 2SD2257 2-10R1A toshiba b1495