Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TOSHIBA 2SJ377 Search Results

    TOSHIBA 2SJ377 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA 2SJ377 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SK2056

    Abstract: 2SK1603 2SK1723 2sk1377 transistor 2SK1603 2SK2146 2SK2351 MOSFET 2sk1357 transistor 2sk1213 2SK2402
    Text: TOSHIBA TOSHIBA POWER MOSFETs 1Q, 1999 Alphanumerically Toshiba Power MOSFET List Alphanumerically Part VDSS RDS ON Number (V) (Ω) ID (A) Package Generation Status 2SJ147 -60 0.2 -12 TO-220IS π -MOSII Non-Promotion 2SJ183 -60 0.35 -5 POWER MOLD L - π -MOSIII


    Original     		2SJ147 O-220IS 2SJ183 2SJ200 2SJ201 2SJ224 O-220FL/SM 2SJ238 2SJ239 2SJ240 2SK2056 2SK1603 2SK1723 2sk1377 transistor 2SK1603 2SK2146 2SK2351 MOSFET 2sk1357 transistor 2sk1213 2SK2402 PDF

    2SK3566 equivalent

    Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
    Text: 2007-12 PRODUCT GUIDE Power MOSFETs Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		BCE0017E S-167 BCE0017F 2SK3566 equivalent 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent PDF

    J377

    Abstract: j377 datasheet 2SJ377 silicon power J377 transistor j377
    Text: 2SJ377 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ377 Relay Drive, DC−DC Converter and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.) High forward transfer admittance


    Original     		2SJ377 J377 j377 datasheet 2SJ377 silicon power J377 transistor j377 PDF

    2SJ377

    Abstract: No abstract text available
    Text: 2SJ377 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ377 Relay Drive, DC−DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.) High forward transfer admittance


    Original     		2SJ377 2SJ377 PDF

    J377

    Abstract: 2SJ377 j377 datasheet silicon power J377 transistor j377
    Text: 2SJ377 2 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type L −π−MOSV 2SJ377 Relay Drive, DC/DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON-resistance : RDS (ON) = 0.16 Ω (typ.) High forward transfer admittance


    Original     		2SJ377 J377 2SJ377 j377 datasheet silicon power J377 transistor j377 PDF

    J377

    Abstract: silicon power J377 2SJ377 transistor j377
    Text: 2SJ377 2 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type L −π−MOSV 2SJ377 Relay Drive, DC/DC Converter and Motor Drive Applications Unit: mm z 4 V gate drive z Low drain−source ON-resistance : RDS (ON) = 0.16 Ω (typ.) z High forward transfer admittance


    Original     		2SJ377 J377 silicon power J377 2SJ377 transistor j377 PDF

    2SJ377

    Abstract: No abstract text available
    Text: 2SJ377 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ377 Relay Drive, DC−DC Converter and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.) l High forward transfer admittance


    Original     		2SJ377 2SJ377 PDF

    J377

    Abstract: 2SJ377
    Text: 2SJ377 2 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type L −π−MOSV 2SJ377 Relay Drive, DC/DC Converter and Motor Drive Applications Unit: mm 1.7 ± 0.2 6.8 MAX. 5.2 ± 0.2 : RDS (ON) = 0.16 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.0 S (typ.)


    Original     		2SJ377 J377 2SJ377 PDF

    J377

    Abstract: 2sj377
    Text: 2SJ377 2 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type L −π−MOSV 2SJ377 Relay Drive, DC/DC Converter and Motor Drive Applications Unit: mm z 4 V gate drive z Low drain−source ON-resistance : RDS (ON) = 0.16 Ω (typ.) z High forward transfer admittance


    Original     		2SJ377 J377 2sj377 PDF

    2SJ377

    Abstract: J377
    Text: 2SJ377 2 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type L −π−MOSV 2SJ377 Relay Drive, DC/DC Converter and Motor Drive Applications Unit: mm 1.5 ± 0.2 6.5 ± 0.2 z High forward transfer admittance : |Yfs| = 4.0 S (typ.) 5.5 ± 0.2 : RDS (ON) = 0.16 Ω (typ.)


    Original     		2SJ377 2SJ377 J377 PDF

    TK12A10K3

    Abstract: tk12a10k TK33A60V TPCA*8065 TK40E10K3 SSM6K407TU TPCA*8064 tk6a65d equivalent TPCA*8036 TK100G10N1
    Text: Semiconductor Catalog 2012-3 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 4


    Original     		PDF

    2SK2056

    Abstract: 2SK1603 2SK1377 2SK537 2SK1723 2SK1213 transistor 2SK1603 2sk1603 datasheet 2SJ239 2SK2352
    Text: [ 9 ] Superseded and Discontinued Product List [ 9 ] Superseded and Discontinued Product List [ 9 ] Superseded and Discontinued Product List 1. Superseded Products The following listed products are no longer being promoted in Toshiba’s marketing. Please refer to Recommended Replacement Part Number.


    Original     		2SK2235 2SK2057 2SK3462 2SK2837 2SK2741 2SK2231 2SK2742 2SK2077 2SK2746 2SK1487 2SK2056 2SK1603 2SK1377 2SK537 2SK1723 2SK1213 transistor 2SK1603 2sk1603 datasheet 2SJ239 2SK2352 PDF

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603 PDF

    2SK1603

    Abstract: 2SK2056 2SK1377 2SK1349 2sk2402 2SK1117 2SK1213 transistor 2SK1603 2SK423 2sk1855
    Text: Small-Signal MOSFETs Toshiba presents a range of small-signal MOSFET S-MOS devices developed for various switching and interface applications. The high-current S-MOS Family has been developed principally for high-current switching applications and has been added to the S-MOS product line. The devices which comprise this family exhibit ultra-low ON-resistance (RDS(ON) and


    Original     		3515C-0202 F-93561, 2SK1603 2SK2056 2SK1377 2SK1349 2sk2402 2SK1117 2SK1213 transistor 2SK1603 2SK423 2sk1855 PDF

    2sk4110

    Abstract: 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent
    Text: 2007-3 PRODUCT GUIDE Power MOSFETs 1.Features and Structure. 2 2.New Power MOSFET Products . 3


    Original     		BCE0017D S-167 BCE0017E 2sk4110 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent PDF

    2SJ377

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ377 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ377 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm 4V Gate Drive Low Drain-Souree ON Resistance


    OCR Scan     		2SJ377 2SJ377 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ377 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-tt-M O SV 2SJ377 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U STRIA L APPLICATIO NS U n it in mm RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 4V G ate Drive


    OCR Scan     		2SJ377 20kf2) PDF

    2SJ377

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ377 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ377 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 4V Gate Drive Low Drain-Source ON Resistance : Rd S (ON) = 0.160 (Typ.)


    OCR Scan     		2SJ377 2SJ377 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ377 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-tt-M O SV 2SJ377 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 4V Gate Drive Low Drain-Source ON Resistance : Rd S (ON)= 0.160 (Typ.)


    OCR Scan     		2SJ377 --60V) PDF

    2n 3904 411

    Abstract: 2SB 407 2SK176 Toshiba 2SC3281 K 1113 2sk toshiba TA4100F TOSHIBA 2N
    Text: TOSHIBA Appendix i SV 1 8 6 . 9 1S V 229. 11 1SV237 . 13


    OCR Scan     		1SV237 1SV239. 1SV257 TA4100F. YTS2222. YTS2222A. YTS2907. YTS2907A. YTS3904. YTS3906. 2n 3904 411 2SB 407 2SK176 Toshiba 2SC3281 K 1113 2sk toshiba TA4100F TOSHIBA 2N PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR TOSHIBA TECHNICAL 2SJ377 DATA SILICON P CHANNEL MOS TYPE L2 - 7 T - M O S V (2SJ377) H IG H S P E E D , H IG H C U R R E N T S W IT C H IN G A P P L IC A T IO N S INDUSTRIAL APPLICATIONS R E L A Y D R IV E, DC-DC C O N V E R T E R A N D M O T O R D R IV E


    OCR Scan     		2SJ377 2SJ377) 0-16fi --60V) 20kfi) 2SJ377 PDF

    2SJ377

    Abstract: relay IR
    Text: TOSHIBA 2SJ377 TO SHIBA FIELD EFFECT TRANSISTOR SILICON P C HANN EL MOS TYPE L2-? r-M O S V 2SJ377 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SW ITCHING APPLICATIONS RELAY DRIVE, DC-DC CONVERTER A N D M O TO R DRIVE APPLICATIONS 4V Gate Drive


    OCR Scan     		2SJ377 relay IR PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SH IB A TOSHIBA FIELD EFFECT TRANSISTOR 77 SILICON P CHANNEL MOS TYPE L2- tt-M OSV n R M r 2SJ377 v M r ^ HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS « INDUSTRIAL APPLICATIONS Unit in mm RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 4V Gate Drive


    OCR Scan     		2SJ377 --100/iA --60V) --10V, ----25V, PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ377 Field Effect Transistor U nit in m m Silicon P Channel MOS Type L2-k-MOS V High Speed, High Current Switching, DC-DC Converter Chopper Regulator and Motor Drive Applications Features • 4V Gate Drive • Low Drain-Source ON Resistance ~ Rds(ON) = 0.16 i i (Typ.)


    OCR Scan     		2SJ377 PDF