NPN Transistor VCEO 1000V
Abstract: 2SC5416 NPN Transistor VCEO 1000V ic15a
Text: Ordering number : EN5696 NPN Triple Diffused Planar Silicon Transistor 2SC5416 Inverter Lighting Applications Features Package Dimensions • High breakdown voltage. • High reliability Adoption of HVP process . • Adoption of MBIT process. unit: mm 2079B-TO220FI (LS)
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EN5696
2SC5416
2079B-TO220FI
2SC5416]
NPN Transistor VCEO 1000V
2SC5416
NPN Transistor VCEO 1000V ic15a
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EN5817
Abstract: TA-1043 2SC5417 58173
Text: Ordering number : EN5817 NPN Triple Diffused Planar Silicon Transistor 2SC5417 Inverter Lighting Applications Features Package Dimensions • High breakdown voltage. • High reliability Adoption of HVP process . • Adoption of MBIT process. unit: mm 2079B-TO220FI (LS)
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EN5817
2SC5417
2079B-TO220FI
2SC5417]
EN5817
TA-1043
2SC5417
58173
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PDF
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IT1172
Abstract: No abstract text available
Text: BFL4036 Ordering number : ENA1830 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET BFL4036 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on =0.4Ω (typ.) Input capacitance Ciss=1000pF (typ.) 10V drive Specifications
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BFL4036
ENA1830
1000pF
A1830-5/5
IT1172
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Untitled
Abstract: No abstract text available
Text: BFL4007 Ordering number : ENA1689 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET BFL4007 General-Purpose Switching Device Applications Features • • Reverse recovery time trr=95ns typ Input capacitance Ciss=1200pF (typ) • • ON-resistance RDS(on)=0.52Ω (typ)
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BFL4007
ENA1689
1200pF
A1689-5/5
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PDF
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Untitled
Abstract: No abstract text available
Text: RD0506LS-SB5 Ordering number : ENA1611 SANYO Semiconductors DATA SHEET RD0506LS-SB5 Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=600V . High reliability. Easy to be mounted, good heat dissipation.
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RD0506LS-SB5
ENA1611
A1611-3/3
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FL4037
Abstract: No abstract text available
Text: BFL4037 Ordering number : ENA1831 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET BFL4037 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on =0.33Ω (typ.) Input capacitance Ciss=1200pF (typ.) 10V drive Specifications
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BFL4037
ENA1831
1200pF
A1831-5/5
FL4037
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STP3NA100
Abstract: STP3NA100FI
Text: STP3NA100 STP3NA100FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V DSS R DS on ID STP3NA100 STP3NA100FI 1000 V 1000 V <5 Ω <5Ω 3.5 A 2A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 4.3 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED
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STP3NA100
STP3NA100FI
100oC
O-220
O-220FI
STP3NA100
STP3NA100FI
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PDF
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K4089
Abstract: 2SK4089LS
Text: 2SK4089LS Ordering number : ENA0557 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4089LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability Adoption of HVP process .
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2SK4089LS
ENA0557
A0557-5/5
K4089
2SK4089LS
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EN8624
Abstract: 2SK3095LS
Text: 2SK3095LS Ordering number : EN8624 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK3095LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee.
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2SK3095LS
EN8624
150described
EN8624
2SK3095LS
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K2628
Abstract: transistors k2628 2sk2628 2SK2628ALS ENA0363A ENA0363
Text: 2SK2628ALS Ordering number : ENA0363A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK2628ALS General-Purpose Switching Device Applications Features • • • Low ON-resistance. Low Qg. Ultrahigh-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C
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2SK2628ALS
ENA0363A
A0363-5/5
K2628
transistors k2628
2sk2628
2SK2628ALS
ENA0363A
ENA0363
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PDF
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2sc6093
Abstract: 2SC6093LS
Text: 2SC6093LS Ordering number : ENA0274 SANYO Semiconductors DATA SHEET NPN Triple Diffused Planar Silicon Transistor 2SC6093LS Color TV Horizontal Deflection Output Applications Features • • • • • High speed. High breakdown voltage VCBO=1500V . High reliability (Adoption of HVP process).
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2SC6093LS
ENA0274
A0274-4/4
2sc6093
2SC6093LS
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K2632
Abstract: 2SK2632LS 2SK2632 TA-2380 K263 TO-220FI-LS
Text: 注文コード No. N 5 5 3 1 B 2SK2632LS No. N 5 5 3 1 B N2000 新 半導体ニューズ No.N5531A とさしかえてください。 2SK2632LS 特長 N チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。
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2SK2632LS
N2000
N5531A
IT00748
IT00754
IT00753
K2632
2SK2632LS
2SK2632
TA-2380
K263
TO-220FI-LS
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PDF
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2SK1446
Abstract: No abstract text available
Text: Ordering number:EN3449A N-Channel Silicon MOSFET 2SK1446 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-state resistance. · Ultrahigh-speed switching. · Micaless package facilitating easy mounting. unit:mm 2078B [2SK1446] 4.5
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EN3449A
2SK1446
2078B
2SK1446]
O-220FI
2SK1446
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PDF
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2SK1445
Abstract: No abstract text available
Text: Ordering number:EN3448A N-Channel Silicon MOSFET 2SK1445 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-state resistance. · Ultrahigh-speed switching. · Micaless package facilitating easy mounting. unit:mm 2078B [2SK1445] 4.5
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EN3448A
2SK1445
2078B
2SK1445]
O-220FI
2SK1445
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2SK1444
Abstract: 34473
Text: Ordering number:EN3447C N-Channel Silicon MOSFET 2SK1444 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-state resistance. · Ultrahigh-speed switching. · Micaless package facilitating easy mounting. unit:mm 2078B [2SK1444] 4.5
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EN3447C
2SK1444
2078B
2SK1444]
O-220FI
2SK1444
34473
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PDF
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TN4R05
Abstract: No abstract text available
Text: TN4R05 Ordering number : ENA0212 ExPD Excellent Power Device TN4R05 Switching Regulator IC for RCC Method Power Supplies Applications Features • • • • • Original control IC for Delay RCC-type. High voltage power MOSFET with current sense. Overload protection.
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TN4R05
ENA0212
O-220FI5H.
A0212-4/4
TN4R05
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200v 5A mosfet
Abstract: 2sk4198 2SK4198LS k4198 K419
Text: 2SK4198LS Ordering number : ENA1171 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4198LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process.
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2SK4198LS
ENA1171
A1171-5/5
200v 5A mosfet
2sk4198
2SK4198LS
k4198
K419
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PDF
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A1270
Abstract: transistor A1270 RD2004 A1270 transistor datasheet RD2004LN A-1270 a1270* transistor
Text: RD2004LN Ordering number : ENA1270A SANYO Semiconductors DATA SHEET RD2004LN Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=400V . High reliability. One-point fixing type plastic molded package facilitating easy mounting and heat dissipation.
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RD2004LN
ENA1270A
A1270-3/3
A1270
transistor A1270
RD2004
A1270 transistor datasheet
RD2004LN
A-1270
a1270* transistor
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PDF
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RD2004
Abstract: No abstract text available
Text: RD2004LS-SB5 Ordering number : ENA1612 SANYO Semiconductors DATA SHEET RD2004LS-SB5 Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=400V . High reliability. One-point fixing type plastic molded package facilitating easy mounting and heat dissipation.
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RD2004LS-SB5
ENA1612
A1612-3/3
RD2004
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Untitled
Abstract: No abstract text available
Text: • UH Series Lineup Absolute maximum ratings at Ta = 25°C Type No. ftdtage v t» l m Vcss V 2SK1455 2SK1456 «0 P* (A) m 0.2 Electrical characteristics at Ta = 25°C . . Bpsm Clss tVfsl % {«#} typ-ma* mtitom ax typ atVGS = i0V (pF) m m m 30
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OCR Scan
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2SK1455
2SK1456
2SK1458
O-220FI
O-220
2SK1459
2SK1462
2SK1463
2SK1464
2SK1465
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SK2044 AP A d v a n c e d P e rfo rm a n c e Series _ Vdss“ 600V N Channel Power M OSFET £4286 F e a tu r e s • Low ON resistance. ■Very high-speed sw itching. • H igh-speed diode (trr= 120ns). ■M icaless package facilitatin g mounting.
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OCR Scan
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2SK2044
120ns)
O-220FI
51193TH
X-9260
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PDF
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M9412
Abstract: 2SC5047
Text: SANIYO T r a n s i s t o r s f o r Very Hig h - D e f i n i t i o n CRT D i s p l a y H o r i z o n t a l D e f l e c t i o n Output Use 2 otc S t r u c t u r e a n d S t ru c tu r e p a tt e r n e d with a large number of u n i t s c o n s i s t i n g of base
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OCR Scan
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DD54RCLS
2SC3894
2SC3895
2SC3896
2SC3897,
2SC4770,
2SC4923,
2SC4924.
2SC3995,
2SC3996,
M9412
2SC5047
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PDF
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TO-126LP
Abstract: No abstract text available
Text: Precautions when handling transistors 1. Lead forming and cutting Sanyo transistor products are available in a range of lead configurations and lengths. As required, however, you can form or cut package leads to meet the needs of specific applications. As a general precaution, you should always handle
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OCR Scan
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PDF
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2SK2632
Abstract: 2SK2636 TS9938 2SK2436 2SK2634
Text: • AP Series Lineup New H-lll Series VDSS = 800V, N- channel Absolute maximum ratings atTa =25°C Type No. Package Vtm m 2SK2631 TP 2SK2632 TO-220FI TS9928 TO-220FI A ^DS(on) typ/max at V«*=15V Cita Crss typ (PF) Qg typ <nC) (300) (45) (8) 3.6/4.8 550
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OCR Scan
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2SK2631
2SK2632
TS9928
2SK2633
2SK2634
2SK2435
TS9934
TS9938
TS9936
2SK2635
2SK2636
2SK2436
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