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    TO220 RTHJA Search Results

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    SCR PNPN

    Abstract: NTE5499 scr 6A NTE5498 scr 12a
    Text: NTE5498 & NTE5499 Silicon Controlled Rectifier SCR 12 Amp, TO220 Description: The NTE5498 and NTE5499 silicon controlled rectifiers are high performance glass passivated PNPN devices in a TO220 type package designed for general purpose high current applications


    Original     		PDF NTE5498 NTE5499 NTE5498 NTE5499 SCR PNPN scr 6A scr 12a

    NTE5438

    Abstract: NTE5437
    Text: NTE5437 & NTE5438 Silicon Controlled Rectifier SCR 8 Amp Senstitive Gate, TO220 Description: The NTE5437 and NTE5438 are silicon controlled rectifiers (SCR) in a TO220 type package designed for general purpose high voltage applications where gate sensitivity is required.


    Original     		PDF NTE5437 NTE5438 NTE5437 NTE5438

    NTE5536

    Abstract: 12v, 40a scr "Silicon Controlled Rectifier" 800V 12V 40A Relay SCR 800V 40A
    Text: NTE5536 Silicon Controlled Rectifier SCR 800V, 40 Amp, TO220 Description: The NTE5536 is a silicon controlled rectifier (SCR) in a TO220 type package designed for use as back−to−back SCR output devices for solid state relays or applications requiring high surge operation.


    Original     		PDF NTE5536 NTE5536 12v, 40a scr "Silicon Controlled Rectifier" 800V 12V 40A Relay SCR 800V 40A

    diode schottky 1000V 10a

    Abstract: "Dual Schottky Rectifier" NTE6086 10 AMP 1000V RECTIFIER DIODE
    Text: NTE6086 Silicon Dual Schottky Rectifier 100V, 10 Amp, TO220 Description: The NTE6086 is a silicon dual power rectifier in a TO220 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: D 20 Amps Total 10 Amps Pre Diode Leg


    Original     		PDF NTE6086 NTE6086 diode schottky 1000V 10a "Dual Schottky Rectifier" 10 AMP 1000V RECTIFIER DIODE

    12N50C3

    Abstract: No abstract text available
    Text: SPP12N50C3 SPI12N50C3, SPA12N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF SPP12N50C3 SPI12N50C3, SPA12N50C3 P-TO220-3-31 PG-TO220-3-31 PG-TO262-3-1 PG-TO220-3-1 P-TO220-3-1 PG-TO-220-3-31: SPP12N50C3 12N50C3

    16N50C3

    Abstract: Q67040-S4581 16N50 SPA16N50C3 SPI16N50C3 SPP16N50C3 AN-TO220-3-31-01 P-TO220-3-31
    Text: SPP16N50C3, SPI16N50C3 SPA16N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.28 Ω ID 16 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1 P-TO220-3-1


    Original     		PDF SPP16N50C3, SPI16N50C3 SPA16N50C3 P-TO220-3-31 P-TO262-3-1 P-TO220-3-1 P-TO-220-3-31: SPP16N50C3 16N50C3 Q67040-S4581 16N50 SPA16N50C3 SPI16N50C3 SPP16N50C3 AN-TO220-3-31-01 P-TO220-3-31

    04n50c3

    Abstract: SPA04N50C3
    Text: SPP04N50C3, SPB04N50C3 SPA04N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.95 Ω ID 4.5 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1


    Original     		PDF SPP04N50C3, SPB04N50C3 SPA04N50C3 P-TO220-3-31 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: SPP04N50C3 04n50c3 SPA04N50C3

    1614G

    Abstract: No abstract text available
    Text: SPP15P10P G SIPMOS Power-Transistor Product Summary Feature • P-Channel VDS -100 V • Enhancement mode RDS on 0.24 Ω • Avalanche rated ID -15 A • dv/dt rated PG-TO220-3 Drain pin 2 Type Package SPP15P10P PG-TO220-3 Gate pin1 Lead free Marking


    Original     		PDF SPP15P10P PG-TO220-3 SPP15P10P 15P10P -200A/ 1614G

    04n60c3

    Abstract: 04N60C3 equivalent smd transistor G18 04n60 04N60C SPB04N60C3 SPA04N60C3 SPP04N60C3 transistor C 331
    Text: SPP04N60C3, SPB04N60C3 SPA04N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.95 Ω ID 4.5 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1


    Original     		PDF SPP04N60C3, SPB04N60C3 SPA04N60C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: SPP04N60C3 04n60c3 04N60C3 equivalent smd transistor G18 04n60 04N60C SPB04N60C3 SPA04N60C3 SPP04N60C3 transistor C 331

    Untitled

    Abstract: No abstract text available
    Text: BDS20 BDS21 SEME LAB MECHANICAL DATA Dimensions in mm SILICON EPITAXIAL BASE COMPLEMENTARY DARLINGTON POWER TRANSISTORS IN TO220 PACKAGE 4.6 1 0.6 0.8 3.6 Dia. 1 0 .6 1 3 .5 16.5 BDS20SM BDS21SM 1 23 1 3 .7 0 FEATURES • HERMETIC TO220 METAL OR CERAMIC PACKAGES


    Original     		PDF BDS20 BDS21 BDS20SM BDS21SM O220M O220SM

    Untitled

    Abstract: No abstract text available
    Text: SPP15P10P G SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel VDS -100 V • Enhancement mode RDS on 0.24 Ω • Avalanche rated ID -15 A • dv/dt rated PG-TO220-3 Drain pin 2 Type Package SPP15P10P PG-TO220-3 Gate pin1 Marking Source


    Original     		PDF SPP15P10P PG-TO220-3 SPP15P10P 15P10P -200A/

    Untitled

    Abstract: No abstract text available
    Text: SPP12N50C3 SPI12N50C3, SPA12N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated FP PG-TO220-3-31 PG-TO262- PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP12N50C3 SPI12N50C3, SPA12N50C3 PG-TO220-3-31 PG-TO262- PG-TO220 P-TO220-3-31 P-TO220-3-1 PG-TO-220-3-31

    Untitled

    Abstract: No abstract text available
    Text: SPP04N80C3 SPA04N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 1.3 Ω ID 4 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP04N80C3 SPA04N80C3 PG-TO220-3-31 PG-TO220 P-TO220-3-31 PG-TO-220-3-31: Q67040-S4433 04N80C3

    04n60c3

    Abstract: Q67040-S4366
    Text: SPP04N60C3, SPB04N60C3 SPA04N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.95 Ω ID 4.5 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1


    Original     		PDF SPP04N60C3, SPB04N60C3 SPA04N60C3 P-TO220-3-31 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: SPP04N60C3 04n60c3 Q67040-S4366

    08N50C3

    Abstract: SPI08N50C3 P-TO-220-3-31 SPA08N50C3 SPP08N50C3 08N50
    Text: SPP08N50C3, SPI08N50C3 SPA08N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.6 Ω ID 7.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1 P-TO220-3-1


    Original     		PDF SPP08N50C3, SPI08N50C3 SPA08N50C3 P-TO220-3-31 P-TO262-3-1 P-TO220-3-1 P-TO-220-3-31: SPP08N50C3 08N50C3 SPI08N50C3 P-TO-220-3-31 SPA08N50C3 SPP08N50C3 08N50

    04N80C3

    Abstract: 04N80C3* TO220 SPA04N80C3 SPP04N80C3 PG-TO220-3-31 SP000216300 04n80
    Text: SPP04N80C3 SPA04N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 1.3 Ω ID 4 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP04N80C3 SPA04N80C3 PG-TO220-3-31 PG-TO220 P-TO220-3-31 PG-TO-220-3-31: Q67040-S4433 04N80C3 04N80C3 04N80C3* TO220 SPA04N80C3 SPP04N80C3 SP000216300 04n80

    04n60c3

    Abstract: 04N60C 04N60C3 equivalent 04N60 Q67040-S4407 SPA04N60C3 Q67040-S4366 SPB04N60C3 SPP04N60C3 SPB04N60C3 SMD
    Text: Final data SPP04N60C3, SPB04N60C3 SPA04N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.95 Ω ID 4.5 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1


    Original     		PDF SPP04N60C3, SPB04N60C3 SPA04N60C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: SPP04N60C3 04n60c3 04N60C 04N60C3 equivalent 04N60 Q67040-S4407 SPA04N60C3 Q67040-S4366 SPB04N60C3 SPP04N60C3 SPB04N60C3 SMD

    06n80c3

    Abstract: SPA06N80C3 06N80 TO220 HEATSINK DATASHEET PG-TO220-3-31 Q67040-S4351 SPP06N80C3
    Text: SPP06N80C3 SPA06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.9 Ω ID 6 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP06N80C3 SPA06N80C3 PG-TO220-3-31 PG-TO220 P-TO220-3-31 PG-TO-220-3-31: Q67040-S4351 06N80C3 06n80c3 SPA06N80C3 06N80 TO220 HEATSINK DATASHEET Q67040-S4351 SPP06N80C3

    03N60C3

    Abstract: SPB03N60C3 03n60 SPP03N60C3 SPA03N60C3 ID32 transistor smd list spa03n
    Text: Final data SPP03N60C3, SPB03N60C3 SPA03N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 1.4 Ω ID 3.2 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1


    Original     		PDF SPP03N60C3, SPB03N60C3 SPA03N60C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: SPP03N60C3 03N60C3 SPB03N60C3 03n60 SPP03N60C3 SPA03N60C3 ID32 transistor smd list spa03n

    08n50c3

    Abstract: SPA08N50C3 PG-TO220-3-31 SPI08N50C3 SPP08N50C3 Q67040-S4567
    Text: SPP08N50C3, SPI08N50C3 SPA08N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.6 Ω ID 7.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262 PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP08N50C3, SPI08N50C3 SPA08N50C3 PG-TO220-3-31 PG-TO262 PG-TO220 P-TO220-3-31 PG-TO-220-3-31: SPP08N50C3 08n50c3 SPA08N50C3 SPI08N50C3 SPP08N50C3 Q67040-S4567

    15N60C3

    Abstract: TRANSISTOR 15n60c3 SP000216325 SPP15N60C3 Q67040-S4600 VDD480V Q67040-S4601
    Text: SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.28 Ω ID 15 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3 PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP15N60C3, SPI15N60C3 SPA15N60C3 P-TO220-3-31 PG-TO220-3-31 PG-TO262-3 PG-TO220 PG-TO-220-3-31: SPP15N60C3 15N60C3 TRANSISTOR 15n60c3 SP000216325 Q67040-S4600 VDD480V Q67040-S4601

    SP000216312

    Abstract: 11N6
    Text: SPP11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3 PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 PG-TO220-3-31 PG-TO262-3 PG-TO220 PG-TO-220-3-31: SPI11N60C3 SP000216312 11N6

    12N50C3

    Abstract: PG-TO220-FP PG-TO220-3-31 SPA12N50C3 SPI12N50C3 SPP12N50C3 smd transistor 331
    Text: SPP12N50C3 SPI12N50C3, SPA12N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated FP PG-TO220-3-31 PG-TO262- PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP12N50C3 SPI12N50C3, SPA12N50C3 PG-TO220-3-31 PG-TO262- PG-TO220 P-TO220-3-31 P-TO220-3-1 PG-TO-220-3-31 12N50C3 PG-TO220-FP SPA12N50C3 SPI12N50C3 SPP12N50C3 smd transistor 331

    12N50C3

    Abstract: SPA12N50C3 PG-TO220-3-31 SPI12N50C3 SPP12N50C3 SP000216322 INFINEON marking
    Text: SPP12N50C3 SPI12N50C3, SPA12N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262- PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP12N50C3 SPI12N50C3, SPA12N50C3 PG-TO220-3-31 PG-TO262- PG-TO220 P-TO220-3-31 P-TO220-3-1 PG-TO-220-3-31: 12N50C3 SPA12N50C3 SPI12N50C3 SPP12N50C3 SP000216322 INFINEON marking