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    TO-251 MOSFET Search Results

    TO-251 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    TO-251 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate MOSFETS CJD02N60 N-Channel Power MOSFET TO-251 General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading


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    O-251 CJD02N60 O-251 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate MOSFETS CJD01N60 N-Channel Power MOSFET TO-251 General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading


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    O-251 CJD01N60 O-251 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate MOSFETS CJD01N60 N-Channel Power MOSFET TO-251 General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading


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    O-251 CJD01N60 O-251 PDF

    PJP1N80

    Abstract: No abstract text available
    Text: PJP1N80 / PJU1N80 TO-220AB/TO-251 800V N-Channel Enhancement Mode MOSFET FEATURES TO-220AB • 1A, 800V, RDS ON =16Ω@VGS=10V, ID=0.5A • • • • • TO-251 Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current


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    PJP1N80 PJU1N80 O-220AB/TO-251 O-220AB IEC61249 2002/95/EC O-220AB O-251 MIL-STD-750 PDF

    D2N60

    Abstract: U2N60
    Text: PJD2N60 / PJU2N60 TO-252 / TO-251 600V N-Channel Enhancement Mode MOSFET FEATURES • 2A, 600V, RDS ON =4.6Ω@VGS=10V, ID=1.0A • • • • • • TO-251 TO-252 Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current


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    PJD2N60 PJU2N60 2002/95/EC O-252 O-251 O-252 O-251 MIL-STD-750 D2N60 U2N60 PDF

    P1N80

    Abstract: U1N80 ELER
    Text: PJP1N80 / PJU1N80 TO-220AB/TO-251 800V N-Channel Enhancement Mode MOSFET FEATURES TO-220AB • 1A, 800V, RDS ON =16Ω@VGS=10V, ID=0.5A • • • • • • TO-251 Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current


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    PJP1N80 PJU1N80 O-220AB/TO-251 O-220AB O-251 2002/95/EC O-220AB O-251 MIL-STD-750 PJP1N80 P1N80 U1N80 ELER PDF

    SID15N10

    Abstract: MosFET 15N10
    Text: SID15N10 15A, 100V, RDS ON 110mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-251 DESCRIPTION The SID15N10 provide the designer with the best combination of fast switching. The TO-251 package is


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    SID15N10 O-251 SID15N10 O-251 15N10 22-Apr-2013 MosFET 15N10 PDF

    IRFU210A

    Abstract: IRFU230A FDU3706 FDU6030BL FDU6512A FDU6612A FDU6644 FDU6680A FDU6692 FDU7030BL
    Text: Discrete MOSFET TO-251 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-251(IPAK) N-Channel FDU3706 20 Single 0.009 0.011 0.016 - 16 50 44 FDU6512A 20 Single - 0.021 0.031


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    O-251 O-251 FDU3706 FDU6512A ISL9N308AD3 ISL9N312AD3 ISL9N306AD3 FDU6644 FDU6680A FDU7037P06 IRFU210A IRFU230A FDU3706 FDU6030BL FDU6512A FDU6612A FDU6644 FDU6680A FDU6692 FDU7030BL PDF

    SID05N10

    Abstract: MosFET 05n10
    Text: SID05N10 5A , 100V , RDS ON 170 mΩ Ω N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen-free TO-251 DESCRIPTION The SID05N10 provide the designer with the best combination of fast switching, The TO-251 package is


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    SID05N10 O-251 SID05N10 O-251 05N10 40nction 300us, 26-Dec-2011 MosFET 05n10 PDF

    CEP50N06

    Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
    Text: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223


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    O-251/TO-252 O-220/TO-263 OT-23 OT-223 OT-89 2928-8J O-220FM CEP50N06 CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139 PDF

    mosfet 300V 10A

    Abstract: M01N60 mosfet 10V 10A n channel mosfet mosfet 10a 600v 2a 400v mosfet to-251 FAST RECOVERY DIODE 10A 400V
    Text: N Channel MOSFET M01N60 1.0A PIN CONFIGURATION TO-251 FEATURE TO-252 Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits


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    M01N60 O-251 O-252 O-251/252 00A/S mosfet 300V 10A M01N60 mosfet 10V 10A n channel mosfet mosfet 10a 600v 2a 400v mosfet to-251 FAST RECOVERY DIODE 10A 400V PDF

    mosfet 600V 20A

    Abstract: M02N60 Mosfet 600V, 20A TO 220 Package High current N CHANNEL MOSFET MOSFET 400V TO-220 n channel mosfet 600V 2A MOSFET N-channel N channel mosfet TO220
    Text: N Channel MOSFET M02N60 2.0A PIN CONFIGURATION TO-251 FEATURE TO-252 Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits


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    M02N60 O-251 O-252 O-251/252 O-220 00A/S mosfet 600V 20A M02N60 Mosfet 600V, 20A TO 220 Package High current N CHANNEL MOSFET MOSFET 400V TO-220 n channel mosfet 600V 2A MOSFET N-channel N channel mosfet TO220 PDF

    PJ1N60

    Abstract: No abstract text available
    Text: PJ1N60 Power Field Effect Transistor T he PJ1N60 Series is a high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage- TO-252 TO-251 blocking capability without degrading performance over time.In addition, this advanced MOSFET is designed to withstand high


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    PJ1N60 voltageTO-251 O-252 O-252 27BSC 05BSC PDF

    Untitled

    Abstract: No abstract text available
    Text: PJ2N60 Power Field Effect Transistor T he PJ2N60 Series is a high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage- blocking capability without degrading performance over time.In TO-251 addition, this advanced MOSFET is designed to withstand high


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    PJ2N60 voltageTO-251 O-252 O-251 O-252 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT50N03 Power MOSFET 45A, 25V N-CHANNEL POWER MOSFET 1 TO-251  FEATURES * RDS ON < 14mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified  1 TO-252 SYMBOL


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    UT50N03 O-251 O-252 O-252D UT50N03L-TM3-T UT50N03G-TM3-T UT50N03L-TN3-T UT50N03G-TN3-T UT50N03L-TN3-R UT50N03G-TN3-R PDF

    N mosfet 100v 200A

    Abstract: No abstract text available
    Text: ST36N10D N Channel Enhancement Mode MOSFET 36.0A DESCRIPTION STN36N10D is used trench technology to provide excellent RDS on and gate charge. Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION (D-PAK) TO-252 TO-251


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    ST36N10D STN36N10D O-252 O-251 00V/20 O-252 O-251 ST36N10D N mosfet 100v 200A PDF

    IXTU1N80P

    Abstract: T1N80 1N80P
    Text: Preliminary Technical Information PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated TO-263 IXTA G S VDSS ID25 IXTA1N80P IXTP1N80P IXTU1N80P IXTY1N80P RDS(on) TO-251 (IXTU) TO-220 (IXTP) (TAB) G G (TAB) S Test Conditions VDSS TJ = 25°C to 150°C


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    O-263 IXTA1N80P IXTP1N80P IXTU1N80P IXTY1N80P O-251 O-220 IXTU1N80P T1N80 1N80P PDF

    1N80P

    Abstract: T1N80 IXTU1N80P IXTA1N80P IXTA1N80 IXTP1N80P
    Text: Preliminary Technical Information PolarTM Power MOSFET IXTA1N80P IXTP1N80P IXTU1N80P IXTY1N80P N-Channel Enhancement Mode Avalanche Rated TO-263 IXTA G S VDSS ID25 RDS(on) TO-251 (IXTU) TO-220 (IXTP) (TAB) G G (TAB) D S Symbol Test Conditions VDSS TJ = 25°C to 150°C


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    IXTA1N80P IXTP1N80P IXTU1N80P IXTY1N80P O-263 O-251 O-220 1N80P T1N80 IXTU1N80P IXTA1N80P IXTA1N80 IXTP1N80P PDF

    168B

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT50N03 Power MOSFET 45A, 25V N-CHANNEL POWER MOSFET „ 1 FEATURES TO-252 * RDS ON = 14mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified „ 1 SYMBOL TO-251 2.Drain


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    UT50N03 O-252 O-251 UT50N03L-TM3-T UT50N03G-TM3-T UT50N03L-TN3-R UT50N03G-TN3-R UT50N03L-TN3-T UT50N03G-TN3-T 168B PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarTM Power MOSFET VDSS = 500V = 5A ID25 RDS on ≤ 1.4Ω Ω IXTU5N50P IXTY5N50P IXTA5N50P IXTP5N50P N-Channel Enhancement Mode Avalanche Rated TO-251 (IXTU) G S D (Tab) TO-252 (IXTY) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


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    IXTU5N50P IXTY5N50P IXTA5N50P IXTP5N50P O-251 O-252 O-220 O-251 PDF

    IXTA5N50P

    Abstract: IXTP5N50P IXTU5N50P
    Text: IXTU5N50P IXTY5N50P IXTA5N50P IXTP5N50P PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS = 500V = 5A ID25 RDS on ≤ 1.4Ω Ω TO-251 (IXTU) G S D (Tab) TO-252 (IXTY) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


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    IXTU5N50P IXTY5N50P IXTA5N50P IXTP5N50P O-251 O-252 O-263 O-220AB O-251 O-220 IXTP5N50P PDF

    ut3055

    Abstract: diode BA 158 mosfet BA 95 S
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3055 Power MOSFET 12A, 25V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION TO-252 The UTC UT3055 is N-Channel logic level enhancement mode field effect transistor. „ SYMBOL 2.Drain 1 TO-251 1.Gate 3.Source „ ORDERING INFORMATION


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    UT3055 O-252 UT3055 O-251 UT3055-TM3-T UT3055L-TM3-T UT3055-TN3-R UT3055L-TN3-R UT3055-TN3-T UT3055L-TN3-T diode BA 158 mosfet BA 95 S PDF

    STD5NE10

    Abstract: No abstract text available
    Text: STD5NE10 N - CHANNEL 100V - 0.32 Ω - 5A TO-251/TO-252 STripFET POWER MOSFET TYPE STD5NE10 VDSS R DS on ID 100 V < 0.4 Ω 5A TYPICAL RDS(on) = 0.32 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE TESTED 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION


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    STD5NE10 O-251/TO-252 O-251 STD5NE10 PDF

    Untitled

    Abstract: No abstract text available
    Text: VDSS ID25 IXTU05N100 IXTY05N100 High Voltage Power MOSFET = = ≤ RDS on 1000V 750mA Ω 17Ω N-Channel Enhancement Mode Avalanche Rated TO-251 G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


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    IXTU05N100 IXTY05N100 750mA O-251 05N100M PDF