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    TO 92 CASE N10 Search Results

    TO 92 CASE N10 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CS-DSDMDB09MF-010 Amphenol Cables on Demand Amphenol CS-DSDMDB09MF-010 9-Pin (DB9) Deluxe D-Sub Cable - Copper Shielded - Male / Female 10ft Datasheet
    CS-DSDMDB15MF-002.5 Amphenol Cables on Demand Amphenol CS-DSDMDB15MF-002.5 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Female 2.5ft Datasheet
    CS-DSDMDB15MM-025 Amphenol Cables on Demand Amphenol CS-DSDMDB15MM-025 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Male 25ft Datasheet
    CS-DSDMDB25MM-010 Amphenol Cables on Demand Amphenol CS-DSDMDB25MM-010 25-Pin (DB25) Deluxe D-Sub Cable - Copper Shielded - Male / Male 10ft Datasheet
    CS-DSDMDB37MM-002.5 Amphenol Cables on Demand Amphenol CS-DSDMDB37MM-002.5 37-Pin (DB37) Deluxe D-Sub Cable - Copper Shielded - Male / Male 2.5ft Datasheet

    TO 92 CASE N10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    25N100A

    Abstract: .25N100 25N100 N100
    Text: Low VCE sat High speed IGBT IXGH/IXGM 25 N100 IXGH/IXGM 25 N100A Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1000 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 T C = 25°C 50 A IC90


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    PDF N100A 25N100 25N100A O-204AE 25N100A .25N100 25N100 N100

    LM136

    Abstract: LM136Z LT1009 LT1009CZ NCV1009 NCV1009D NCV1009Z DIODE smd marking N7
    Text: NCV1009 2.5 Volt Reference The NCV1009 is a precision trimmed 2.5 V ±5.0 mV shunt regulator diode. The low dynamic impedance and wide operating current range enhances its versatility. The tight reference tolerance is achieved by on–chip trimming which minimizes voltage tolerance and


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    PDF NCV1009 NCV1009 NCV1009Z LT1009CZ LM136Z r14525 NCV1009/D LM136 LT1009 NCV1009D NCV1009Z DIODE smd marking N7

    Untitled

    Abstract: No abstract text available
    Text: NCV1009 2.5 Volt Reference The NCV1009 is a precision trimmed 2.5 V ±5.0 mV shunt regulator diode. The low dynamic impedance and wide operating current range enhances its versatility. The tight reference tolerance is achieved by on–chip trimming which minimizes voltage tolerance and


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    PDF NCV1009 NCV1009Z LT1009CZ LM136Z LT1009 LM136 r14525 NCV1009/D

    Zener diode smd marking N1

    Abstract: 1009Z 1009D Diode smd marking N4
    Text: NCV1009 2.5 Volt Reference The NCV1009 is a precision trimmed 2.5 V ±5.0 mV shunt regulator diode. The low dynamic impedance and wide operating current range enhances its versatility. The tight reference tolerance is achieved by on–chip trimming which minimizes voltage tolerance and


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    PDF NCV1009 NCV1009Z LT1009CZ LM136Z LT1009 LM136 r14525 NCV1009/D Zener diode smd marking N1 1009Z 1009D Diode smd marking N4

    zener n7

    Abstract: DIODE smd marking N7 LM136 LM136Z LT1009 LT1009CZ NCV1009 NCV1009D NCV1009Z
    Text: NCV1009 2.5 Volt Reference The NCV1009 is a precision trimmed 2.5 V ±5.0 mV shunt regulator diode. The low dynamic impedance and wide operating current range enhances its versatility. The tight reference tolerance is achieved by on−chip trimming which minimizes voltage tolerance and


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    PDF NCV1009 NCV1009 NCV1009Z LT1009CZ LM136Z-2 LT1009 NCV1009/D zener n7 DIODE smd marking N7 LM136 LM136Z NCV1009D NCV1009Z

    Untitled

    Abstract: No abstract text available
    Text: NCV1009 2.5 Volt Reference The NCV1009 is a precision trimmed 2.5 V ±5.0 mV shunt regulator diode. The low dynamic impedance and wide operating current range enhances its versatility. The tight reference tolerance is achieved by on−chip trimming which minimizes voltage tolerance and


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    PDF NCV1009 NCV1009 NCV1009Z LT1009CZ LM136Zâ NCV1009/D

    CS1009

    Abstract: CS1009GD8 CS1009GDR8 CS1009GZ3 LM136 LM136Z LT1009 LT1009CZ
    Text: CS1009 2.5 Volt Reference The CS1009 is a precision trimmed 2.5 V ±5.0 mV shunt regulator diode. The low dynamic impedance and wide operating current range enhances its versatility. The tight reference tolerance is achieved by on–chip trimming which minimizes voltage tolerance and temperature


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    PDF CS1009 CS1009 CS1009GZ LT1009CZ LM136Z r14525 CS1009/D CS1009GD8 CS1009GDR8 CS1009GZ3 LM136 LT1009

    samsung R540 service

    Abstract: Samsung R418 Preface Notebook Computer socket 479 schematic diagram computer voltage CPU hard drive CD Drive Insyde bios manual W83L517 samsung lcd tv power supply schematic schematic diagram crt tv samsung Z0301
    Text: Preface Notebook Computer M350C/M360C Service Manual Preface I Preface Notice The company reserves the right to revise this publication or to change its contents without notice. Information contained herein is for reference only and does not constitute a commitment on the part of the manufacturer or any subsequent vendor. They assume no responsibility or liability for any errors or inaccuracies that may appear in this publication nor are


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    PDF M350C/M360C samsung R540 service Samsung R418 Preface Notebook Computer socket 479 schematic diagram computer voltage CPU hard drive CD Drive Insyde bios manual W83L517 samsung lcd tv power supply schematic schematic diagram crt tv samsung Z0301

    CS1009GZ3

    Abstract: CS1009 CS1009GD8 CS1009GDR8 LM136 LM136Z LT1009 LT1009CZ Zener diode smd marking N1
    Text: CS1009 2.5 Volt Reference The CS1009 is a precision trimmed 2.5 V ±5.0 mV shunt regulator diode. The low dynamic impedance and wide operating current range enhances its versatility. The tight reference tolerance is achieved by on–chip trimming which minimizes voltage tolerance and temperature


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    PDF CS1009 CS1009 CS1009GZ LT1009CZ LM136Z r14525 CS1009/D CS1009GZ3 CS1009GD8 CS1009GDR8 LM136 LT1009 Zener diode smd marking N1

    Untitled

    Abstract: No abstract text available
    Text: Back CS1009 2.5 Volt Reference The CS1009 is a precision trimmed 2.5 V ±5.0 mV shunt regulator diode. The low dynamic impedance and wide operating current range enhances its versatility. The tight reference tolerance is achieved by on–chip trimming which minimizes voltage tolerance and temperature


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    PDF CS1009 CS1009GZ LT1009CZ LM136Z LT1009 LM136 r14525 CS1009/D

    Wakefield Thermal Solutions TYPE 120

    Abstract: intel packaging handbook 240800 Diode Mark N10 f 6061 A80960JD-33 A80960JD-40 A80960JD-50 A80960JD-66 A80960JT-100 A80960JT-75
    Text: 80960JA/JF/JD/JT 3.3 V Microprocessor 1.0 Packaging Information: 80960Jx 3.3 V Processors The 80960Jx is offered with four speeds and three package types. The 132-pin Pin Grid Array PGA device is specified for operation at VCC = 3.3 V ± 0.15 V over a case temperature range of


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    PDF 80960JA/JF/JD/JT 80960Jx 132-pin A80960JT-100 A80960JT-75 A80960JD-66 A80960JD-50 A80960JD-40 A80960JD-33 Wakefield Thermal Solutions TYPE 120 intel packaging handbook 240800 Diode Mark N10 f 6061 A80960JD-33 A80960JD-40 A80960JD-50 A80960JD-66 A80960JT-100 A80960JT-75

    A80960JD-33

    Abstract: A80960JD-40 A80960JD-50 A80960JD-66 A80960JT-100 A80960JT-75 NG80960JT-100 NG80960JT-75
    Text: 80960Jx 3.3 V Microprocessor 1.0 Packaging Information: 80960Jx 3.3 V Processors The 80960Jx is offered with four speeds and three package types. The 132-pin Pin Grid Array PGA device is specified for operation at VCC = 3.3 V ± 0.15 V over a case temperature range of


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    PDF 80960Jx 132-pin A80960JT-100 A80960JT-75 A80960JD-66 A80960JD-50 A80960JD-40 A80960JD-33 A80960JD-33 A80960JD-40 A80960JD-50 A80960JD-66 A80960JT-100 A80960JT-75 NG80960JT-100 NG80960JT-75

    samsung R540 service

    Abstract: 37 TV samsung lcd Schematic circuit diagram W83L517 Preface Notebook Computer ALC201 samsung lcd tv power supply schematic "Smoke Sensor MQ2 Insyde bios manual z1021 37 TV samsung lcd Schematic
    Text: Preface Notebook Computer M350C/M360C/M361C/M362C Service Manual Preface I Preface Notice The company reserves the right to revise this publication or to change its contents without notice. Information contained herein is for reference only and does not constitute a commitment on the part of the manufacturer or any subsequent vendor. They assume no responsibility or liability for any errors or inaccuracies that may appear in this publication nor are


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    PDF M350C/M360C/M361C/M362C Z3002 Z3011 DTC114EUA 71-M3500-D02) Z3004 Z3007 Z3010 DTA114EUA Z3012 samsung R540 service 37 TV samsung lcd Schematic circuit diagram W83L517 Preface Notebook Computer ALC201 samsung lcd tv power supply schematic "Smoke Sensor MQ2 Insyde bios manual z1021 37 TV samsung lcd Schematic

    DIODE smd marking N7

    Abstract: CS1009 CS1009GD8 CS1009GDR8 CS1009GZ3 LM136 LM136Z LT1009 LT1009CZ
    Text: CS1009 2.5 Volt Reference The CS1009 is a precision trimmed 2.5 V ±5.0 mV shunt regulator diode. The low dynamic impedance and wide operating current range enhances its versatility. The tight reference tolerance is achieved by on–chip trimming which minimizes voltage tolerance and temperature


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    PDF CS1009 CS1009 CS1009GZ LT1009CZ LM136Z r14525 CS1009/D DIODE smd marking N7 CS1009GD8 CS1009GDR8 CS1009GZ3 LM136 LT1009

    b3 JF

    Abstract: MARK AD9 80960JA 80960JD 80960JT 273109
    Text: 80960JA/JF/JD/JS/JC/JT 3.3 V Embedded 32-Bit Microprocessor Datasheet Product Features • ■ ■ ■ ■ Code Compatible with all 80960Jx Processors High-Performance Embedded Architecture — One Instruction/Clock Execution — Core Clock Rate is: 1x the Bus Clock for 80960JA/JF/JS


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    PDF 80960JA/JF/JD/JS/JC/JT 32-Bit 80960Jx 80960JA/JF/JS 80960JD/JC 80960JT 80960JA 80960JF/JD b3 JF MARK AD9 80960JD 80960JT 273109

    NG80960JC-40

    Abstract: No abstract text available
    Text: 80960JA/JF/JD/JS/JC/JT 3.3 V Embedded 32-Bit Microprocessor Datasheet Product Features • ■ ■ ■ ■ Code Compatible with all 80960Jx Processors High-Performance Embedded Architecture — One Instruction/Clock Execution — Core Clock Rate is: 1x the Bus Clock for 80960JA/JF/JS


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    PDF 80960JA/JF/JD/JS/JC/JT 32-Bit 80960Jx 80960JA/JF/JS 80960JD/JC 80960JT 80960JA 80960JF/JD NG80960JC-40

    Untitled

    Abstract: No abstract text available
    Text: g ixYs VDSS ! RDS on 1000 V 10 A 1.20 n 1000 V 12 A 1.05 Û IXTH/IXTM10 N100 IXTH/IXTM12 N100 MegaMOS FET 1D25 N-Channel Enhancement Mode Maximum Ratings Symbol Test Conditions v’ DSS ^ v 0GR Td = 25°C to 150“C; RGS = 1 Mi2 = 25°C to 150°C 1000 V


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    PDF IXTH/IXTM10 IXTH/IXTM12 10N100 12N100 O-247 O-204 O-247 IXTH10N100

    BX1750A

    Abstract: BX1750A-3D BX1750 MIL-STD-1750 CMGA17-P113 surom 5962-8951901MXC CMGA5-P113 mil-std-1750a 5962-8951903mxc
    Text: REVISIONS LTR DATE DESC R IPTIO N REV SH EE T REV SH EE T A PPROVED YR-M O -DA Technical changes to 1.2.2 and 1.4. Technical changes in table I. Adjustment to figure 4. Editorial changes throughout. 90-08-15 William K. Heckman Add device types 02, 03, 92, and 93. Update boilerplate to full OPOPN SMD.


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    PDF 5962-R190-93 5962-R138-94 5962-R182-96 BX1750A BX1750A-3D BX1750 MIL-STD-1750 CMGA17-P113 surom 5962-8951901MXC CMGA5-P113 mil-std-1750a 5962-8951903mxc

    C289

    Abstract: IXTM5N100A
    Text: Standard Power MOSFET ix t h / ix t m s n io o IXTH/IXTM 5 N100A VD S S ^ D25 1000 V 1000 V 5A 5A D D S o n 2.4 £1 2.0 Q N-Channel Enhancement Mode Symbol Maximum Ratings Test Conditions V v oss T j = 25°C to 150“C 1000 V VDGR T j = 25°C to 150°C; RGS = 1 M il


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    PDF N100A O-247 O-204 O-247 C2-88 IXTH5N100 1XTM5N100 C2-89 C289 IXTM5N100A

    2N100

    Abstract: C285 IXTP2N100A
    Text: ItilXYS IXTA/fXTP 2 N100 IXTA/IXTP 2 N100A VDSS ^D25 1000 V 1000 V 2A 2A p DS on 7.0 Û 6.0 ß N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VOSS Tj = 25°C to 150°C 1000 V V Tj = 25°C to 150°C; RGS= 1 M fi 1000 V Vos VGSM Continuous


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    PDF N100A O-220 O-263 2N100 2N100A 2N100A C2-85 C285 IXTP2N100A

    15N100

    Abstract: No abstract text available
    Text: VDSS HiPerFET Power MOSFETs p ^D25 DS on 1000 V 14 A 0.75 Ü 1000V 15 A 0.7 Q trr < 200 ns ix f h / i x f x i 4 n io o IXFH/IXFX15 N100 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Preliminary data Symbol Test Conditions Maximum Ratings


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    PDF IXFH/IXFX15 14N100 15N100 K30Ts

    Untitled

    Abstract: No abstract text available
    Text: OIXYS V CES Low VCE ,i(| IGBT High Speed IGBT IXGH 12 N100 IXGH 12 N100A e _ Symbol Test Conditions VCES Tj = $ Maximum Ratings 25°C to 150°C 1000 v CGR Tj = 25°C to 150°C; RGE = 1 MQ 1000 V Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C 24 A


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    PDF N100A O-247 -247S

    DIODE B44 sot

    Abstract: IXTK21 B44 diode IXTN21N100
    Text: IXTK21 N100 IXTN21N100 High Voltage MegaMOS FETs DSS D25 RDS on = 1000 V = 21 A = 0.55 Q N-Channel, Enhancement Mode TO-264 AA (IXTK) Maximum Ratings IXTN IXTK Symbol Test Conditions VDSS T, = 25°C to 150°C Tj = 25°C to 150°C; Ras = 1 MO V«, Vas V


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    PDF IXTK21 IXTN21N100 O-264 21N100 21N100 DIODE B44 sot B44 diode IXTN21N100

    cat c15 ecm

    Abstract: 1Kx32 asus f3 ARRAY MICROSYSTEMS asus n10 a66210 D110 d4oc1 asus n5
    Text: a66311 RECONFIGURABLE a r r a y S T O R E R a S ADVANCE DATA SHEET- REVISION 1.1, MAR, 1992 GENERAL DESCRIPTION: FEATURES: The Reconfigurable array Store (RaS) is an application specific memory chip for the a66xxx family of array pro­ cessing devices. The RaS can be used to implement data


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    PDF t21992 a66311 a66xxx cat c15 ecm 1Kx32 asus f3 ARRAY MICROSYSTEMS asus n10 a66210 D110 d4oc1 asus n5