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    TN201 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TN2010H-6FP STMicroelectronics Discrete Semiconductor Products - Thyristors - SCRs - HIGH TEMPERATURE 20A SCRS Original PDF
    TN2010H-6G STMicroelectronics SCR 600MV 20A D2PAK Original PDF
    TN2010H-6G-TR STMicroelectronics Discrete Semiconductor Products - Thyristors - SCRs - HIGH TEMPERATURE 20A SCRS Original PDF
    TN2010H-6T STMicroelectronics Discrete Semiconductor Products - Thyristors - SCRs - HIGH TEMPERATURE 20A SCRS Original PDF
    TN2010L Unknown Shortform Datasheet & Cross References Data Short Form PDF
    TN2010L Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF
    TN2010T Unknown Original PDF
    TN2010T-T1 Vishay Intertechnology N-Channel Enhancement-Mode MOSFET Transistor Original PDF
    TN2015H-6FP STMicroelectronics Discrete Semiconductor Products - Thyristors - SCRs - SCR 600V 20A TO-220FPAB Original PDF
    TN2015H-6T STMicroelectronics Discrete Semiconductor Products - Thyristors - SCRs - SCR 600V 20A TO-220 Original PDF
    TN2017 Continental Device India TO-237 Plastic Package Transistors Scan PDF
    TN2017 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    TN2017 Continental Device India NPN Transistor, TO-237 Scan PDF
    TN2017 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    TN2017 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    TN2017 National Semiconductor NPN Medium Power Transistors Scan PDF
    TN2017 National Semiconductor Transistors Scan PDF
    TN2017 National Semiconductor Shortform National Semiconductor Datasheet Short Form PDF

    TN201 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TN2010T

    Abstract: No abstract text available
    Text: TN2010T N-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 200 11 0.8 to 3.0 0.12 Features Benefits Applications D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc.


    Original
    PDF TN2010T O-236 OT-23) S-52426--Rev. 14-Apr-97 TN2010T

    TN2010T

    Abstract: Marking Code For TN2010 R1 MARKING CODE
    Text: TN2010T N-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 200 11 0.8 to 3.0 0.12 Features Benefits Applications D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc.


    Original
    PDF TN2010T O-236 OT-23) 18-Jul-08 TN2010T Marking Code For TN2010 R1 MARKING CODE

    Untitled

    Abstract: No abstract text available
    Text: TN2010T N-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 200 11 0.8 to 3.0 0.12 Features Benefits Applications D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc.


    Original
    PDF TN2010T O-236 OT-23) 08-Apr-05

    512-Point

    Abstract: No abstract text available
    Text: TN201 Fast Fourier Transforms on the Rabbit 2000 INTRODUCTION The Fourier transform is frequently used to analyze and modify real-world signals and waveforms. The Fourier transform is usually defined as ∞ X f = ∫ x ( t )e – j2πft dt . –∞ When the independent variable corresponds to time, the transform variable corresponds to frequency, in which case X(f) is called the spectrum of x(t). The original x(t) may be recovered from


    Original
    PDF TN201 512-Point

    TN2010T

    Abstract: No abstract text available
    Text: TN2010T N-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 200 11 0.8 to 3.0 0.12 Features Benefits Applications D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc.


    Original
    PDF TN2010T O-236 OT-23) S-52426--Rev. 14-Apr-97 TN2010T

    TN2010T

    Abstract: No abstract text available
    Text: TN2010T N-Channel Enhancement-Mode MOS Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 200 11 0.8 to 3.0 0.085 Features Benefits Applications D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc.


    Original
    PDF TN2010T O-236 OT-23) P-38212--Rev. 15-Aug-94 TN2010T

    TN201

    Abstract: No abstract text available
    Text: TN201 Fast Fourier Transforms on the Rabbit The Fourier transform is frequently used to analyze and modify real world signals and waveforms. The Fourier transform is usually defined as: ∞ ∫ X f = x ( t )e – j2πft dt –∞ When the independent variable corresponds to time, the transform variable corresponds to frequency, in


    Original
    PDF TN201 TN201

    2U 37 diode

    Abstract: M810S KT934B diode 2N4000 2N2196 KT934G KT646A 2N6390 2N2197 semelab 2N2197
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 35 40 >= 50 BSX46•6 MH8106 MS106 MS106 BCX55-6 TN2017 2N2017 BC141B ~g~~t~g 55 60 65 70 2N2197 BD415 2N6551 BC141C BSX46·16 BCX55·16 2SD1615 2SD1615 2S01615A 2SD1615A BD320 SD1527·8 BFR22


    Original
    PDF 220AB 205AD 2N4923 2N4000 MM3020 2SD221F BCX56 DTL1653 2U 37 diode M810S KT934B diode 2N4000 2N2196 KT934G KT646A 2N6390 2N2197 semelab 2N2197

    TN2010T

    Abstract: No abstract text available
    Text: TN2010T Siliconix NĆChannel EnhancementĆMode MOS Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 200 11 0.8 to 3.0 0.085 Features Benefits Applications D D D D D D D D D D D HighĆVoltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc.


    Original
    PDF TN2010T P-38212--Rev. TN2010T

    mosfet cross reference

    Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
    Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is


    Original
    PDF T0-92 options4206A ZVN4206C ZVN4206E ZVN4306A TN2106K1 VN2210N3 TN0606N3 TN0606N6 mosfet cross reference pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode

    88E1340

    Abstract: 88E6122 marvell 88E6122 datasheet 88e1121r ET1011C HX1188NL 88E1121 BCM5241 BCM1190 BCM5395
    Text: LAN DISCRETE TRANSFORMER MODULES Pulse Discrete Transformer Modules Pulse offers the most comprehensive line of discrete LAN transformer modules available to the OEM worldwide. Modules 10/100/1000BASE-T are optimized for all major LAN transceivers. All modules provide electrical circuit isolation that meets IEEE


    Original
    PDF 10/100/1000BASE-T 88E1340 88E6122 marvell 88E6122 datasheet 88e1121r ET1011C HX1188NL 88E1121 BCM5241 BCM1190 BCM5395

    transistor SMD s72

    Abstract: nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p
    Text: ВВЕДЕНИЕ Впервые, сделана столь масштабная попытка, разобраться с маркировкой компонентов поверхностного монтажа SMD . Конечно, книга не является панацеей, но на взгляд авторов должна существенно помочь в той


    Original
    PDF OT323 BC818W MUN5131T1. BC846A SMBT3904, MVN5131T1 SMBT3904 OT323 transistor SMD s72 nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p

    mosfet cross reference

    Abstract: bs170 replacement VN10KM replacement CROSS REFERENCE 2n6661 BST72A replacement BSN10 "cross reference" BST72A CROSS equivalent of BS250 ZVNL110A cross reference vn10km cross
    Text: MOSFET Cross Reference* Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number 2N6660 2N6660 IRFF110 VN2210N2 VN0605T TN2106K1-G ZVN0540A VN0550N3-G


    Original
    PDF 2N6660 IRFF110 VN2210N2 VN0605T TN2106K1-G ZVN0540A VN0550N3-G 2N6661 mosfet cross reference bs170 replacement VN10KM replacement CROSS REFERENCE 2n6661 BST72A replacement BSN10 "cross reference" BST72A CROSS equivalent of BS250 ZVNL110A cross reference vn10km cross

    tn2010l

    Abstract: TN2010 TN201
    Text: BW 5P& TN201 OL, TN241 OL N-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY TO-92 TO-226AA V(BRJDSS PART NUMBER 'X ' •d (A) TN2010L 200 10 0.18 TN2410L 240 10 0.18 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VNDB24 3 1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)


    OCR Scan
    PDF TN201 TN241 O-226AA) TN2010L TN2410L VNDB24 TN2010

    2A 5A10

    Abstract: NSD106 NSD104 NSD6178 TO-202 transistor NPN 2N4239 2N5321 D40D10 D40D11 D40D13
    Text: NATL SEMICÔND DISCRETE 2SE D- • bSG113Q GQ377âS 1 ■ 7"^/ NPN Medium Power Transistors by Ascending Vceo (Continued) H fe @ lc /V Ce Vce (sat) (V) ’ Vceo (V) Min Max (mA/V) NSE181 PN3568 TN2017 60 60 60 50 40 50 250 120 200 10/1 150/1 200/10 0.9 0.25


    OCR Scan
    PDF bSG113Q GQ377aS NSE181 PN3568 TN2017 O-202 O-237 TN2102 2N5321 2A 5A10 NSD106 NSD104 NSD6178 TO-202 transistor NPN 2N4239 D40D10 D40D11 D40D13

    VNDB24

    Abstract: TN201 VN2406L
    Text: VNDB24 N-Channel Enhancement-Mode MOSFET TYPE PACKAGE Single TO-220 VN2406D Single TO-92 TO-226AA VN2406L, TN201 OL, TN2410L Single TO-237 VN2406M Single Chip • Available as VNDB1CHP DEVICE TYPICAL CHARACTERISTICS 1 2 3 4 5 V DS (V) 1 2 V GS (V)


    OCR Scan
    PDF VNDB24 O-220 O-226AA) O-237 VN2406D VN2406L, TN201 TN2410L VN2406M VNDB24 VN2406L

    2N6591

    Abstract: No abstract text available
    Text: NATL SEMICÔND DISCRETE 2SE ». • bSG1130 G0377Ô5 1 ■ NPN Medium Power Transistors by Ascending Vceo (V) Min NSE181 PN3568 TN2017 60 60 60 50 40 50 250 120 200 TN2102 65 40 2N5321 D40D10 D40D11 D40D13 D40D14 NSD6178 75 75 75 75 75 75 40 50 120 50 120


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    PDF bSG1130 G0377 NSE181 PN3568 TN2017 TN2102 2N5321 D40D10 D40D11 D40D13 2N6591

    TN2010L

    Abstract: No abstract text available
    Text: .Zf in c o rp o ra te d VNDB1 DIE N-Channel Enhancement-Mode MOS Transistor V N D B 1C H P * TN2010L TN2410L VN2406D/L/M VN2410L/M ‘ Meets or exceeds specification for all part numbers listed below For additional design information please consult the typical performance curves VNDB24.


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    PDF TN2010L TN2410L VN2406D/L/M VN2410L/M VNDB24.

    T1P42C

    Abstract: No abstract text available
    Text: TO-220 PIN CONFIGURATION 1. BASE 2 . COLLECTOR 3. EMITTER 4. COLLECTOR c DIM E ,01 0 -I A B C D E F G H J K L M N 3 G MIN MAX 14,42 9,63 3,56 16.51 10,67 4,83 0,90 1,40 3,88 2,79 3,43 0,56 14,73 6,35 2,92 - 1,15 3,75 2,29 2,54 12,70 - 2,03 - 7 31,24 DEG TO-220 Power Package Transistors NPN


    OCR Scan
    PDF O-220 O-220 O-237-2 00014QÃ T1P42C

    Untitled

    Abstract: No abstract text available
    Text: Tem ic Siliconix_ _ N-Channel Enhancement-Mode MOS Transistor Product Summary V bk d ss M in (V) r DS(on) M ax (Q ) Vg s (Ui) (V) Id (A) 200 11 0.8 to 3.0 0.085 Features • • • • • Low On-Resistance: 9.5 Q


    OCR Scan
    PDF O-236 OT-23) TN2010T P-38212--Rev.

    2N6706

    Abstract: 2n6730 tn2905 CSC1573 MPSW13 2N6705 2N6707 2N6711 cil916 2N6713
    Text: TO-237 DIM A B C D E F G H K L MIN 4,32 4,45 3,18 0,41 0,35 1,14 12,70 5.DEG MAX 5,33 5,20 4,19 0,55 0,50 0,55 1,40 2,54 - A L L DIM EN SIO N S A R E IN M.M. L L PIN CONFIGURATION AVAILABLE IN TO-237 CDIL Code Style 3 TO-237 PIN 1 PIN 2 PIN 3 Emitter Base


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    PDF O-237 O-237 O-237-1 O-237-2 TN4037 O-237-2 TN4234 2N6706 2n6730 tn2905 CSC1573 MPSW13 2N6705 2N6707 2N6711 cil916 2N6713

    2N5715

    Abstract: transistor 2N3569 2N3569 d44c3 NSDU07 d40p3 "NPN Transistors" 2n3567 u3sg dd354 2N3566
    Text: NATL SEMICOND {DISCRETE} 650 1130 NATL SEMICOND, CM CM u CN Sfl DE | b S O U H O 003SmE 28C 35412 DISCRETE CN CN CN 7 CN CN "D _ Z 0. ' S - / y -c// - 3* 3 - (0 Max NF (dB) o CN Ï CO o Ô) St'S S .?.£ s O O in in o in o in o in . O in o in • o >o <


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    PDF 003SmE DD3543D tSD113D 2N5715 transistor 2N3569 2N3569 d44c3 NSDU07 d40p3 "NPN Transistors" 2n3567 u3sg dd354 2N3566

    2N8714

    Abstract: TN221S CN100 CN100A TN2219A TN2270 TN635 1X3053 ql232
    Text: CONTINENTAL DEVICE INDIA b3E D • 2333314 000014^ 14P B r i m - TO-237 -PLASTIC PACKAGE TRANSISTORS NPN Maximum Ratings Electrical Characteristics III Typ* Vcbo Ha (V) vCEO M vEBO (V) Un Mm Mm CIL2331Y 80 60 8 0.10 60


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    PDF 23a33T4 O-237 L2331Y O-237-1 TNS37 O-237-2 O2017 CN100 2N8714 TN221S CN100A TN2219A TN2270 TN635 1X3053 ql232

    ztx450 equivalent

    Abstract: transistor equivalent ZTX651 ztx650 equivalent MPS651 equivalent MPS751 equivalent ztx751 equivalent ZTX749 equivalent transistor ztx MPSW92 equivalent ZTX Zetex
    Text: Z E T E X S U P ER E LIN E CROSS R EFER EN C E LIST This Cross-Reference List is intended as a guide to the selection of a direct or near equivalent device from the Zetex Super E-Line Range. Individual device specifications should be checked in detail before


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    PDF 2N6714 2N6715 2N6716 2N6717 2N6718 2N6719 2N6720 2N6721 2N6722 2N6723 ztx450 equivalent transistor equivalent ZTX651 ztx650 equivalent MPS651 equivalent MPS751 equivalent ztx751 equivalent ZTX749 equivalent transistor ztx MPSW92 equivalent ZTX Zetex