Untitled
Abstract: No abstract text available
Text: NXP 600 V HF-TL lamp drivers UBA2015, UBA2015A and UBA2016A Fluorescent lamp drivers for HF-TL with PFC control, dimming and boost function Specially designed for use with electronic ballasts, and based on NXP’s GreenChip technology, these highly integrated controller ICs support all common lamp types and configurations.
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UBA2015,
UBA2015A
UBA2016A
UBA2015)
UBA2015A)
UBA2016A)
001aam531
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Untitled
Abstract: No abstract text available
Text: TACT SWITCHES SERIES TL 1150 SWITCHES TACT SWITCHES 50mA @ 30 VDC Life Expectancy: 1,000,000 cycles Contact Resistance: 100mΩ @ 5 VDC Insulation Resistance: 100mΩ min. Dielectric Strength: 600 VAC Actuation Force: 70 ±20 gf Travel: FEATURES & BENEFITS
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function of diac
Abstract: diac BIPOLAR block diagram of diac DIAC transistor diac BIPOLAR DIAC DATASHEET DIAC EQUIVALENT circuit half-bridge converter MOROCCO st diac
Text: VK06TL / VK06TLS ELECTRONIC DRIVER FOR TL BALLASTS DATA BRIEF TYPE VK06TL VK06TLS BV Icrms 600 V 0.7 A EMITTER SWITCH POWER OUTPUT STAGE INTEGRATED ANTIPARALLEL COLLECTOR GROUND DIODE • ACCURATE 5% PRECISION tON CONTROL ■ INTEGRATED DIAC FUNCTION
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VK06TL
VK06TLS
SO-16
VK06TL13TR
VK06TL,
function of diac
diac BIPOLAR
block diagram of diac
DIAC
transistor diac BIPOLAR
DIAC DATASHEET
DIAC EQUIVALENT circuit
half-bridge converter
MOROCCO
st diac
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Untitled
Abstract: No abstract text available
Text: SERIES TL 1140 SWITCHES TACT SWITCHES TACT SWITCHES SPECIFICATIONS 100mΩ @ 5 VDC Insulation Resistance: 100mΩ min. Dielectric Strength: 600 VAC Actuation Force: 70 ±20 gf PUSHBUTTON SWITCHES 1,000,000 cycles Contact Resistance: NAVIGATION SWITCHES 50mA@30 VDC
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schottky barrier diode b22
Abstract: FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08
Text: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 2nd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode
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OD-123
O-220F-2pin
O-251
O-252)
O-220-2pin
O-220
O-220F
O-262
schottky barrier diode b22
FCH20U10
Schottky Diode B29
fcu20a40
10ERB20
niec FCHS10A12
FCQS10A065
EC30QSA045
FCHS10A12
fchs20a08
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Untitled
Abstract: No abstract text available
Text: MCC HIGH EFFICIENT RECTIFIERS OPERATING/STORAGE TEMPERATURE RANGE: -55°C TO 150°C Average Forward Maximum Working Forward Peak Current @ HalfReverse Current Peak Surge Current Wave @ VRWM Reverse @ 8.3mS MCC Resistive Load Voltage Superimposed @ 25°C TL*
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HER101S
HER102S
HER103S
HER104S
HER105S
HER106S
HER107S
HER108S
EGP10A
EGP10B
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Untitled
Abstract: No abstract text available
Text: CGA-6618Z CGA-6618Z Dual CATV 5MHz to 1000MHz High Linearity GaAs HBT Amplifier DUAL CATV 5MHz to 1000MHz HIGH LINEARITY GaAs HBT AMPLIFIER Package: ESOP-8 Product Description Features RFMD’s CGA-6681Z is a high performance GaAs HBT MMIC amplifier. Designed
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CGA-6618Z
1000MHz
1000MHz
CGA-6681Z
DS120502
CGA6618ZSB
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CGA-3318
Abstract: CGA6618 CGA-6618 CGA-6618Z ETC1-1-13 SOIC-08 ETC-1-1-13 CGA-6681 macom marking
Text: CGA-6618 Z CGA-6618(Z) Dual CATV 1MHz to 1000MHz High Linearity GaAs HBT Amplifier DUAL CATV 1MHz to 1000MHz HIGH LINEARITY GaAs HBT AMPLIFIER RoHS Compliant and Pb-Free Product (Z Part Number) Package: ESOP-8 Product Description Features RFMD’s CGA-6681(Z) is a high performance GaAs HBT MMIC Amplifier. Designed
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CGA-6618
1000MHz
1000MHz
CGA-6681
greatl061
EDS-101993
CGA-6618
CGA-3318
CGA6618
CGA-6618Z
ETC1-1-13
SOIC-08
ETC-1-1-13
macom marking
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macom marking
Abstract: No abstract text available
Text: CGA-6618Z CGA-6618Z Dual CATV 5MHz to 1000MHz High Linearity GaAs HBT Amplifier DUAL CATV 5MHz to 1000MHz HIGH LINEARITY GaAs HBT AMPLIFIER Package: ESOP-8 Product Description Features RFMD’s CGA-6681Z is a high performance GaAs HBT MMIC amplifier. Designed
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CGA-6618Z
1000MHz
CGA-6618Z
CGA-6681Z
DS120502
CGA6618ZSB
macom marking
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CGA6618Z
Abstract: No abstract text available
Text: CGA-6618Z CGA-6618Z Dual CATV 1MHz to 1000 MHz High Linearity GaAs HBT Amplifier DUAL CATV 1MHz to 1000MHz HIGH LINEARITY GaAs HBT AMPLIFIER Package: ESOP-8 Product Description Features RFMD’s CGA-6681Z is a high performance GaAs HBT MMIC Amplifier. Designed
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CGA-6618Z
CGA-6618Z
1000MHz
CGA-6681Z
CGA6618ZSB
CGA6618ZSQ
CGA6618ZSR
CGA6618Z
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high power amp 100mhz 1w
Abstract: CGA-3318 CGA3318 CGA3318Z CGA-3318Z ETC1-1-13 SOIC-08
Text: CGA-3318 Z CGA-3318(Z) Dual CATV Broadband High Linearity SiGe HBT Amplifier DUAL CATV BROADBAND HIGH LINEARITY SiGe HBT AMPLIFIER RoHS Compliant and Pb-Free Product (Z Part Number) Package: ESOP-8 Product Description Features RFMD’s CGA-3318(Z) is a high performance Silicon Germanium HBT MMIC Amplifier. Designed with SiGe process technology for excellent linearity at an exceptional
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CGA-3318
EDS-101993
CGA3318
CGA3318Z
CGA-3318Z
CGA-3318
high power amp 100mhz 1w
CGA3318
CGA3318Z
CGA-3318Z
ETC1-1-13
SOIC-08
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SOIC-08
Abstract: CGA3318 CGA-3318 CGA3318Z CGA-3318Z ETC1-1-13 NT135
Text: CGA-3318 CGA-3318Z Product Description Sirenza Microdevice’s CGA-3318 is a high performance Silicon Germanium HBT MMIC Amplifier. Designed with SiGe process technology for excellent linearity at an exceptional price. A Darlington configuration is utilized for
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CGA-3318
CGA-3318Z
CGA-3318
1000pF
ECB-101611
EDS-101993
CGA3318
CGA3318Z
SOIC-08
CGA3318
CGA3318Z
CGA-3318Z
ETC1-1-13
NT135
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CGA3318ZSR
Abstract: CGA-3318
Text: CGA-3318Z CGA-3318Z Dual CATV Broadband High Linearity SiGe HBT Amplifier DUAL CATV BROADBAND HIGH LINEARITY SiGe HBT AMPLIFIER Package: ESOP-8 Product Description Features RFMD’s CGA-3318Z is a high performance Silicon Germanium HBT MMIC Amplifier. Designed with SiGe process technology for excellent linearity at an exceptional
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CGA-3318Z
CGA-3318Z
CGA3318
CGA3318Z
CGA3318ZSB
CGA3318ZSQ
25pcs
CGA3318ZSR
CGA3318ZSR
CGA-3318
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marking code macom
Abstract: macom marking Macom marking code CGA-3318
Text: CGA-3318Z CGA-3318Z Dual CATV Broadband High Linearity SiGe HBT Amplifier DUAL CATV BROADBAND HIGH LINEARITY SiGe HBT AMPLIFIER Package: ESOP-8 Product Description Features RFMD’s CGA-3318Z is a high performance Silicon Germanium HBT MMIC Amplifier. Designed with SiGe process technology for excellent linearity at an exceptional
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CGA-3318Z
CGA-3318Z
MatchGA-3318Z
CGA3318
CGA3318Z
CGA3318ZSB
CGA3318ZSQ
CGA3318ZSR
marking code macom
macom marking
Macom marking code
CGA-3318
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T106, scr
Abstract: T106 thyristor T106D1 T106 scr EC103B T106B1 3-lead Compak SCR T106 2N6565 S4004VS2
Text: s ge ka * L. U. ED Z NI E5 G 39 CO 716 E R #E ed ct le Se c Pa Fi le TO-92 *TO-220 Isolated 3-lead Compak TO-202 TO-252 D-Pak TO-251 V-Pak A K G Sensitive SCRs 0.8 A to 10 A E5 General Description The Teccor line of sensitive SCR semiconductors are half-wave
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O-220
O-202
O-252
O-251
O-220
T106, scr
T106 thyristor
T106D1
T106 scr
EC103B
T106B1
3-lead Compak
SCR T106
2N6565
S4004VS2
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RBS 6000
Abstract: RBS 6000 -ericsson RBS 3000 rbs 5000 LT 428 RBS 200 BP107 G-117 G-118 G-119
Text: RBS8 7000A Powerex, Inc., 200 Hillls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 H iO tl POWGT - — General Purpose Rectifier 7000 Amperes Average 600 Volts
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BP107,
400um
RBS 6000
RBS 6000 -ericsson
RBS 3000
rbs 5000
LT 428
RBS 200
BP107
G-117
G-118
G-119
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Untitled
Abstract: No abstract text available
Text: r Z J SGS-THOMSON T08 A SENSITIVE GATE TRIACS FEATURES • It RMS = 0.8 A ■ Vdrm = 200 V to 600 V ■ Igt ^ 10 mA ABSOLUTE RATINGS (limiting values) Param eter Sym bol IT(RMS) ITSM Value Unit A RMS on-state current ( 360° conduction angle ) Tl= 55°C
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EP600
Abstract: altera ep320 altera EP600 ep600i EP600 eprom ep800 EP600 programming EP6001
Text: A N b r~ & €P600 D v A '' n !A ERASABLE p r o g r a m m a b l e L O G IC DEVICE FEATURES GENERAL DESCRIPTION • H igh density over 600 gates replacem ent fo r T TL and 74HC. • Advanced CH M O S EPROM technology, allows erase and reprogram. • High speed, tpd = 25 ns.
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EP600
EP600contains
EP320
altera ep320
altera EP600
ep600i
EP600 eprom
ep800
EP600 programming
EP6001
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Untitled
Abstract: No abstract text available
Text: R E V 1 S I C N S LTR C DESCRIPTION BY/A P P’ D DATE E .C .N . 10000 REVISE PER CURRENT STD; REDRAW 0 9 /1 5 /9 3 TL/ 1 .450 [36.83] MAX • 28 15 nnnnnnnnnnnnnn .600 [15.24] MAX GLASS .5201.006 [13.21 ± 0.15] .025 [0.64 uuuuuuuu U U U U U' 14 □ .030 .055 t y p
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040IN
M0-103,
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ST134W
Abstract: st-1187
Text: e * SLOTTED OPTICAL SWITCH q D Pïm m m ics H22A4/5/6 SYMBOL h ir íiT l 1 " tL 4b ! bi SECTION X - X LEAD PROFILE ST134WH A A, b fa. □, 0, e 9> “ JfllUMETERS MAX, UN. 50.7 11.0 3.0 3.2 ,750 .600 .50 NOM. 11.6 1Í1.0 3.0 S3 7.5 6.S 2.3 2.8 I s s, r 6.1$
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H22A4/5/6
ST134W
ST1187
st-1187
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ST-132
Abstract: st137
Text: SLOTTED OPTICAL SWITCH IPflElEtTRfiliCS CNY28 p SVMSOL MILLIMETERS MIN. WUr A 10.7 11.0 A, 3.0 32 fin 3-0 3Z -r tL ©1 4 0 _ *> i SECTIONX-X T~ LEAD PROFILE J i *b b, D R -g 4 r -4 ,.i„ *2 T ?! I E L A #p Q SEATING PLANE S S, T A ir j 7 x X .750 600 .60 MOM.
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CNY28
5T1339
ST-132
st137
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M-0103
Abstract: No abstract text available
Text: R E V 1S 1O N S LTR DESCRIPTION E.C.N. DATE F R E V I S E AND REDRAW PE R CURR ENT STA NDARD ; UPDATE T IT L E & H IL / A E R O STAMP. 11048 08/10/95 BY/APP'D TL/ •1.490 MAX[37.85] 28 15 .600 MAX [15.24] R . 0 5 5 MAX [1.4] TYP- 1 14 .590-.620 • [14.99-15.75]
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M0-103,
MIL-PRF-38535
MKT-J28A
M-0103
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Untitled
Abstract: No abstract text available
Text: e ^ Tstg Tj Vrm Io a s » -M Ä Ä £ ü $ 1SJ± 2, MWÆ mmm Ifsm 50Hz JESife 7 * ';> n s i i Ta=25t: 50Hz ÏL ^SM 3N £ * i£ L T i= 25t: Vf Ir B il 6 ja TL=25t: If=1A V r=V rm • V - KPbI • Ü H F b! ii y - -5 5 -1 5 0 150 600 0.75 1 45 V A V 1.1 10
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D1F60A
000505b
B2113Ã
0GG5027
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TY6004
Abstract: TY504 TYN 6004 TYN 125 tyn 5 BRY 300 TY 6004 tyn 604 n TYN604 TL4006
Text: thyristors < 80 Arms thyristors < 80 A eff THOMSON-CSF Tam b = 25 ° C Types T L 1003 T L 2003 T L 4003 T L 6003 T L 8003 •o Vrrm = V D RM ■t s m 10 m s ■rm @ v r r m ■dm @ V d r m Tj m ax A (V) (A) m ax (m A) 1 100 200 400 600 800 70 2 dv/dt @ 67% V d r iv i
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TL1003
CB-274I
TY6004
TY504
-TY6004
TY504
TYN 6004
TYN 125
tyn 5
BRY 300
TY 6004
tyn 604 n
TYN604
TL4006
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