IC 741 OPAMP
Abstract: SAA 1251 7106CPL TDA2620 SAA1121 LM 4440 AUDIO AMPLIFIER CIRCUIT touch dimmer TC 306H TDA 2310 TDA 2060 7107CPL
Text: Lineaire IC’s Lineaire IC’s dil to 99 dil 8 to 99 dil 18 to 78 to 99 dil 20 to 99 cer dip to 78 Wij leveren een groot aantal lineaire ic's uit voorraad. Kunt u een bepaald type niet vinden, aarzel dan niet ons telefonisch te raadplegen. Veelal kunnen wij u op korte
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74F552
Abstract: 74F552QC 74F552SC C1995 M28B V28A 9561 TL F 9561 74f552 national
Text: 74F552 Octal Registered Transceiver with Parity and Flags General Description The ’F552 octal transceiver contains two 8-bit registers for temporary storage of data flowing in either direction Each register has its own clock pulse and clock enable input as
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74F552
74F552
74F552QC
74F552SC
C1995
M28B
V28A
9561
TL F 9561
74f552 national
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AS5C4008
Abstract: No abstract text available
Text: SRAM AS5C4008 512K x 8 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATION 32-Pin DIP (CW), 32-Pin LCC (EC) 32-Pin SOJ (ECJ) • SMD 5962-95600 • SMD 5962-95613 • MIL STD-883 A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0
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AS5C4008
STD-883
32-Pin
9561326HTC
5962-9561306HTC
5962-9561325HTC
5962-9561320HTC
5962-9561305HTC
AS5C4008
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BYW34
Abstract: No abstract text available
Text: BYW32-BYW36 Fast Avalanche Sinterglass Diode Features Glass passivated junction Hermetically sealed package Low reverse current Soft recovery characteristics Applications Fast rectification and switching diode for example for TV-line output circuits and switch mode power supply
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BYW32-BYW36
MIL-STD-750,
BYW32
BYW33
BYW34
BYW35
BYW36
100K/W
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BYW36 v
Abstract: BYW32 BYW33 BYW34 BYW35 BYW36
Text: BYW32.BYW36 Vishay Telefunken Fast Silicon Mesa Rectifiers Features D D D D Glass passivated junction Hermetically sealed package Low reverse current Soft recovery characteristics Applications 94 9539 Fast rectifier and switch for example for TV–line output
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BYW32.
BYW36
BYW32
BYW33
BYW34
BYW35
D-74025
24-Jun-98
BYW36 v
BYW32
BYW33
BYW34
BYW35
BYW36
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Untitled
Abstract: No abstract text available
Text: BYW32 / 33 / 34 / 35 / 36 VISHAY Vishay Semiconductors Fast Avalanche Sinterglass Diode Features • • • • Glass passivated junction Hermetically sealed package Low reverse current Soft recovery characteristics Applications Fast rectification and switching diode for example for
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BYW32
OD-57
MIL-STD-750,
BYW33
BYW34
BYW35
BYW36
D-74025
12-Aug-04
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BYW32
Abstract: BYW33 BYW34 BYW35 BYW36
Text: BYW32.BYW36 Vishay Telefunken Fast Silicon Mesa Rectifiers Features D D D D Glass passivated junction Hermetically sealed package Low reverse current Soft recovery characteristics Applications 94 9539 Fast rectifier and switch for example for TV–line output
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BYW32.
BYW36
BYW32
BYW33
D-74025
27-Sep-00
BYW32
BYW33
BYW34
BYW35
BYW36
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BYW34
Abstract: BYW36 BYW32 BYW33 BYW35
Text: BYW32.BYW36 Fast Silicon Mesa Rectifiers Features D D D D Glass passivated junction Hermetically sealed package Low reverse current Soft recovery characteristics Applications Fast rectifier and switch for example for TV–line output circuits and switch mode power supply
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BYW32.
BYW36
BYW32
BYW33
BYW34
BYW35
D-74025
12-Dec-94
BYW34
BYW36
BYW32
BYW33
BYW35
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BYW32
Abstract: BYW32 diode
Text: BYW32 / 33 / 34 / 35 / 36 Vishay Semiconductors Fast Avalanche Sinterglass Diode Features • • • • • • Glass passivated junction Hermetically sealed package e2 Low reverse current Soft recovery characteristics Lead Pb -free component Component in accordance to RoHS 2002/95/EC
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BYW32
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
BYW33
BYW34
BYW35
BYW36
BYW32 diode
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Untitled
Abstract: No abstract text available
Text: BYW32.BYW36 Vishay Semiconductors Fast Silicon Mesa Rectifiers Features D D D D Glass passivated junction Hermetically sealed package Low reverse current Soft recovery characteristics Applications 94 9539 Fast rectifier and switch for example for TV–line output
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BYW32.
BYW36
BYW32
BYW33
BYW34
BYW35
BYW36
D-74025
27-Sep-00
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BYW36
Abstract: BYW32 BYW33 BYW34 BYW35
Text: BYW32 / 33 / 34 / 35 / 36 Vishay Semiconductors Fast Avalanche Sinterglass Diode Features • • • • • • Glass passivated junction Hermetically sealed package e2 Low reverse current Soft recovery characteristics Lead Pb -free component Component in accordance to RoHS 2002/95/EC
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Original
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BYW32
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
BYW32
200ed
08-Apr-05
BYW36
BYW33
BYW34
BYW35
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PDF
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BYW32
Abstract: No abstract text available
Text: BYW32 to BYW36 VISHAY Vishay Semiconductors Fast Avalanche Sinterglass Diode Features • • • • Glass passivated junction Hermetically sealed package Low reverse current Soft recovery characteristics Applications Fast rectifier and switch for example for TV-line output
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BYW32
BYW36
MILSTD-750,
BYW33
BYW34
BYW35
BYW36
D-74025
09-Oct-00
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BYW32
Abstract: BYW33 BYW34 BYW35 BYW36
Text: BYW32 to BYW36 VISHAY Vishay Semiconductors Fast Avalanche Sinterglass Diode \ Features • • • • Glass passivated junction Hermetically sealed package Low reverse current Soft recovery characteristics Applications Fast rectification and switching diode for example for
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BYW32
BYW36
MIL-STD-750,
BYW32
BYW33
BYW34
D-74025
07-Jan-03
BYW33
BYW34
BYW35
BYW36
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BYW32
Abstract: BYW33 BYW34 BYW35 BYW36
Text: BYW32 / 33 / 34 / 35 / 36 Vishay Semiconductors Fast Avalanche Sinterglass Diode Features • • • • • • Glass passivated junction Hermetically sealed package e2 Low reverse current Soft recovery characteristics Lead Pb -free component Component in accordance to RoHS 2002/95/EC
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Original
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BYW32
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
BYW32
200lectual
18-Jul-08
BYW33
BYW34
BYW35
BYW36
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we vqe 24 d
Abstract: 52B33 TA 8445 45558 SEEQ 52B33 52B13 72482
Text: / 52B13/52B23/52B33 52B13H/52B23H/52B33H t r r '7 5 000701 P R E L IM IN A R Y D A TA S H E E T Electrically Erasable ROM March 1983 Features • In p u t L atch es ■ S ingle 5 V S u p p ly ■ S p ecified over \f e e ±10% R ange ■ T TL B yte E ras e/B y te W rite /C h ip C lear
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52B13/52B23/52B33
52B13H/52B23H/52B33H
52B13
52B13H
52B23
52B23H
52B33
52B33H
200i0i/40K/383
we vqe 24 d
TA 8445
45558
SEEQ 52B33
72482
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SEEQ 52B33
Abstract: 52B23 memory 52B13 WE VQE 11 E WE VQE 24 E 19Jl WE VQE 23 E SEEQ 52B23 5252 S 52B33
Text: v. O c <F V 000701 r ^ %>' ,J> 7 52 B 13/ 52 B 23/ 52B 33 52B 13H / 52 B 23 H / 52 B 33H Electrically Erasable RO M March 1983 P R E L IM IN A R Y D A T A S H E E T Features • Input Latches ■ ■ ■ ■ ■ ■ ■ ■ th e o th e r d e v ic e s in th e fa m ily re q u ire o n ly a T TL
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52B13/52B23/52B33
52B13H/52B23H/52B33H
52B13
52B13H
52B23
52B23H
52B33
52B33H
200101/40K/383
SEEQ 52B33
52B23 memory
WE VQE 11 E
WE VQE 24 E
19Jl
WE VQE 23 E
SEEQ 52B23
5252 S
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Untitled
Abstract: No abstract text available
Text: AUSTIN SEMICONDUCTOR, INC. 512K x 8 SRAM SRAM LOW POW ER, EVO LU TIO NA RY PINO UT AVAILABLE AS MILITARY SPECIFICATION • SMD 5962-95613 Pending • MIL STD-883 PIN ASSIGNMENT Top View 32-Pin DIP 32-Pin SOJ FEATURES • Ultra Low Power with 2V Data Retention
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AS5C4009LL
STD-883
100ns
32-Pin
DS000017
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95812
Abstract: 54F651FM 54F651SDM 74F651SC 74F651SPC F651 J24F M24B N24C 96b1
Text: 651*652 National Semiconductor 54F/74F651 • 54F/74F652 T ransceivers/Registers General Description Features These devices consist of bus transceiver circuits with D-type flip-flops, and co ntro l circuitry arranged fo r m ulti plexed transm ission of data d irectly from the input bus or
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54F/74F651
54F/74F652
95812
54F651FM
54F651SDM
74F651SC
74F651SPC
F651
J24F
M24B
N24C
96b1
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triac tag 8518
Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
Text: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference
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IC LA 78141 characteristics
Abstract: NRED 61 A302 ud
Text: TLC5510 8-BIT HIGH-SPEED ANALOG-TO-DIGITAL CONVERTER SLAS095A-SEPTEM BER 1994-R EVISED NOVEMBER 1994 8-Blt Resolution Linearity Error ±0.75 LSB Max 25°C ±1 LSB Max (-20 °C to 75°C) Differential Lineality Error ±0.5 LSB (25°C) ±0.75 LSB M ax(-20°C to 75°C)
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TLC5510
SLAS095A-SEPTEM
1994-R
CXD1175
IC LA 78141 characteristics
NRED 61
A302 ud
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diode E1110
Abstract: lN4002 LN4003 ANA 618 20010 TDB 0123 km b3170 E1110 Diode UB8560D MAA723 moc 2030
Text: elektronik-bauelem ente I WT VD AVL 1 /8 7 Bl. 2 E r l ä u t e r u n g e n z u m I n h a l t und zu d e n A n g a b e n d e r B a u e l e m e n t e - V e r g l e i c h s l i s t e D ie B a u e l e m e n t e - V e r g l e i c h s l i s t e e n t h ä l t a l l e in d e r B i l a n z v e r a n t w o r t u n g d e s V E B K o m b i n a t
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bj 9561
Abstract: 74F552 74F552QC 74F552SC M28B V28A cesn 74f552 national CPR00
Text: ß Ul <J1 ro National Semiconductor 74F552 Octal Registered Transceiver with Parity and Flags General Description The 'F552 octal transceiver contains two 8-bit registers for temporary storage of data flowing in either direction. Each register has its own clock pulse and clock enable input as
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74F552
bS0112S
ODfl255fl
bj 9561
74F552QC
74F552SC
M28B
V28A
cesn
74f552 national
CPR00
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PDF
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Untitled
Abstract: No abstract text available
Text: 74F552 Octal Registered Transceiver with Parity and Flags General Description The ’F552 octal transceiver contains two 8 -bit registers for temporary storage of data flowing in either direction. Each register has its own clock pulse and clock enable input as
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74F552
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d 4464 c
Abstract: No abstract text available
Text: 552 EHSemiconductor National 54F/74F552 Octal Registered Transceiver with Parity and Flags General Description T h e 'F552 octa l transceiver co ntains tw o 8-bit registers fo r te m p o ra ry storage o f data flow ing in e ithe r direction. Each register has its own clo ck pulse and clo ck enable input as
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54F/74F552
d 4464 c
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