bsd214
Abstract: philips bsd215 BSD213 BSD215 BSD212 KT 117 diode t7e L7E transistor IEC134
Text: • titiS3T31 00E374S 15fl ■ N AUER P H I L I P S / D I S C R E T E APX BSD212 to BSD215 L7E D MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTORS Symmetrical insulated gate silicon M O S field-effect transistor of the N-channel enhancement mode type. These transistors are herm etically sealed in a TO-72 envelope and feature a low ON-resistance, high
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titiS3T31
00E374S
BSD212
BSD215
BSD213
BSD215
BSD214
philips bsd215
KT 117
diode t7e
L7E transistor
IEC134
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T-33-73
Abstract: BUT21C BUT21B IEC134 BUT21
Text: ESE D N AMER PHILIPS/DI SCRETE • II titiS3T31 0010035 T '' BUT21B BUT21C T - S 3 - I 3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a T0-220 envelope with electrically isolated seating plane. Intended for use in converters, inverters, switching regulators, motor control
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titiS3T31
BUT21B
BUT21C
T0-220
O-220AB.
BUT211B
T-33-13
7Z94B37
T-33-73
BUT21C
IEC134
BUT21
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BFR84
Abstract: transistor bfr84
Text: BFR84 _/ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a metal TO-72 envelope w ith source and substrate connected to the case, intended fo r a wide range o f v.h.f. applications, such as v.h.f. television tuners, f.m. tuners,
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BFR84
titiS3T31
0035T11
BFR84
transistor bfr84
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optocoupler 357
Abstract: No abstract text available
Text: SL5504 J V O PTO C O U PLER Optically coupled isolator consisting of an infrared emitting GaAs diode and a high voltage silicon npn phototransistor w ith accessible base. Plastic envelope. Suitable for TTL integrated circuits Features • High output/input DC current transfer ratio
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SL5504
bbS3T31
QD35S64
optocoupler 357
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r3305
Abstract: PTB32005X PTB32001X PTB32003X
Text: J N AMER PH I L I P S / D I S C R E T E ObE LbSBTBl D OD1S1DS 1 • PTB32001X PTB32003X PTB32005X MICROW AVE POW ER T RA N SISTO R S N-P-N silicon transistors for use in common-base class-B power amplifiers up to 4,2 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide
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PTB32001X
PTB32003X
PTB32005X
bfci53cÃ
001510e}
PTB32003X
r3305
PTB32005X
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transistor BD 263
Abstract: No abstract text available
Text: BFR29 _ / V . N-CHANNEL INSULATED GATE MOS-FET Depletion type field-effect transistor in a TO-72 metal envelope with the substrate connected to the case. It is intended for linear applications in the audio as well as the i.f, and v.h.f. frequency region, and in
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BFR29
003Sf
bb53331
bb53T31
0035T03
transistor BD 263
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CNX62
Abstract: BS415 sot174
Text: N AMER PHILIPS/DISCRETE 25E D • bbSB TBl GOHIQÜ? .1 ■ Jl CNX62 r - 4 | - 8 5 H IG H -VO LTAGE OPTOCOUPLER The CNX62 is an optocoupler consisting of an infrared emitting GaAs diode and a silicon npn phototransistor irr a dual-in-line Dl L plastic envelope. The base is not connected.
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CNX62
CNX62
E90700
0110b
804/VDE
bb53T31
T-41-83
BS415
sot174
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BGD601
Abstract: No abstract text available
Text: bbiB'm Philips Semiconductors 0032323 lì44 I AP X Product specification BGD601 CATV amplifier module N AUER P H I L I P S / D I S C R E T E PINNING-SOT115C FEATURES DESCRIPTION PIN • Excellent linearity PIN CONFIGURATION input • Extremely low noise 1
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BGD601
PINNING-SOT115C
46dBmV;
BGD601
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s3331
Abstract: No abstract text available
Text: Philips Components BS107 Data sheet status Preliminary specification date of issue February 1991 N-channel enhancement mode vertical D-MOS transistor PINNING - TO-92 variant PIN CONFIGURATION FEATURES PIN • Direct interface to C-M O S, TTL, etc. • High speed switching
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BS107
yP1031
s3331
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Untitled
Abstract: No abstract text available
Text: CNX48U OPTOCOUPLER T O /& t > C —Z Z j Opto-isolator comprising an infrared em itting G aAs diode and a silicon npn Darlington phototransistor w ith accessible base. Plastic 6-lead dual-in line D IL envelope. Features • V e ry high output/input D C current transfer ratio
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CNX48U
E90700
0110b
86/HD
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BUK427-400A
Abstract: 100-P BUK427-400B lD25-c RI LGR
Text: N AMER btiS3'i31 □□202 bS SSE D P H I L I P S / D I SC RE T E 4 PowerMOS transistor BUK427-400A BUK427-400B • GENERAL DESCRIPTION SYMBOL CO Û > N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in
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BUK427-400A
BUK427-400B
BUK427
-400A
-400B
100-P
BUK427-400B
lD25-c
RI LGR
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