AP176
Abstract: TIA-1000-4
Text: Coaxial RF Instrument Amplifier 50Ω TIA-1000-4 High Power 100 to 1000 MHz Features • instrument model with built-in power supply, 110V/220V operation • high power output at 3.5dB compression, 42dBm typ. • high reverse isolation, 55 dB typ. • 100% burn-in at +25°C, 48 hrs
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TIA-1000-4
10V/220V
42dBm
AP176
AP176
TIA-1000-4
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Untitled
Abstract: No abstract text available
Text: Coaxial RF Instrument Amplifier 50Ω TIA-1000-4 High Power 100 to 1000 MHz Features • instrument model with built-in power supply, 110V/220V operation • high power output at 3.5dB compression, 42dBm typ. • high reverse isolation, 55 dB typ. • 100% burn-in at +25°C, 48 hrs
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TIA-1000-4
10V/220V
42dBm
AP176
TIA-1000-4
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Untitled
Abstract: No abstract text available
Text: Coaxial RF Instrument Amplifier 50Ω TIA-1000-1R8 High Power 0.50 to 1000 MHz Features • instrument model with built-in power supply, 110V/220V operation • high power output at 3.5dB compression, 37dBm typ. • high gain, 38 dB typ. • high reverse isolation, 80 dB typ.
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TIA-1000-1R8
10V/220V
37dBm
AP175
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TIA-1000-4
Abstract: No abstract text available
Text: RF Instrument Amplifier TIA-1000-4 Typical Performance Curves Gain Directivity 27.0 10 26.5 15 Gain @ 110V Gain dB 25.5 25.0 24.5 24.0 25 30 35 40 23.5 45 23.0 50 22.5 55 22.0 100 200 300 400 500 600 Directivity @ 110V 20 Directivity (dB) 26.0 700 800 900
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TIA-1000-4
TIA-1000-4
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AP176
Abstract: TIA-1000-4
Text: Coaxial RF Instrument Amplifier 50Ω TIA-1000-4 High Power 100 to 1000 MHz Features • instrument model with built-in power supply, 110V/220V operation • high power output at 3.5dB compression, 42dBm typ. • high reverse isolation, 55 dB typ. • 100% burn-in at +25°C, 48 hrs
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TIA-1000-4
10V/220V
42dBm
AP176
AP176
TIA-1000-4
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Untitled
Abstract: No abstract text available
Text: RF Instrument Amplifier TIA-1000-4-2 Typical Performance Data :1 220V NOISE FIGURE (dB) 220V Pout at 1dB Comp. (dBm) 220V 3.27 1.14 2.30 1.41 1.40 1.18 1.24 1.06 1.23 1.52 13.27 14.65 14.30 13.14 12.02 11.69 9.76 7.26 8.32 8.82 40.63 40.14 37.90 38.79 38.58
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TIA-1000-4-2
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Untitled
Abstract: No abstract text available
Text: Coaxial RF Instrument Amplifier 50Ω TIA-1000-1R8 High Power 0.50 to 1000 MHz Features • instrument model with built-in power supply, 110V/220V operation • high power output at 3.5dB compression, 37dBm typ. • high gain, 38 dB typ. • high reverse isolation, 80 dB typ.
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10V/220V
37dBm
TIA-1000-1R8
AP175
RANGE800
TIA-1000-1R8
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Untitled
Abstract: No abstract text available
Text: Coaxial RF Instrument Amplifier 50Ω TIA-1000-1R8 High Power 0.50 to 1000 MHz Features • instrument model with built-in power supply, 110V/220V operation • high power output at 3.5dB compression, 37dBm typ. • high gain, 38 dB typ. • high reverse isolation, 80 dB typ.
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10V/220V
37dBm
TIA-1000-1R8
AP175
TIA-1000-1R8
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AP175
Abstract: AP176
Text: AMPLIFIERS 50 Ω RF Instrument HIGH POWER 0.5 to 1000 MHz TIA up to 10W +40 dBm output FREQ. MHz MODEL NO. fL fU GAIN, dB Min. MAXIMUM POWER, dBm Input Output Flatness (1 dB Comp.) Max. Max. Typ. Min. (no damage) TIA-900-10 TIA-1000-4 100-900 100-1000 28
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TIA-900-10
TIA-1000-4
TIA-1000-1R8
AP176
AP175
AP175
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Patent Guide
Abstract: minicircuits LEE-49 HFCN-2700A GALI-84 VBFZ-780 ZHL-20W-13 ade-2ask LFCN-160 ZFL-500LN
Text: Mini-Circuits Patent Guide Mini-Circuits Model U.S. Patent ADC-10-1R. 6,133,525 . 6,140,887 ADC-10-4. 6,133,525 . 6,140,887 ADC-10-4-75. 6,133,525 . 6,140,887 ADC-10-4-75R. 6,133,525
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ADC-10-1R.
ADC-10-4.
ADC-10-4-75.
ADC-10-4-75R.
ADC-12-4-75.
ADC-12-7550.
ADC-15-4.
ADC-15-4-75.
ADC-16-4-75.
ADC-18-4-75.
Patent Guide
minicircuits
LEE-49
HFCN-2700A
GALI-84
VBFZ-780
ZHL-20W-13
ade-2ask
LFCN-160
ZFL-500LN
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BT412
Abstract: AP176 BT451 TIA-1000-1R8 TIA-1000-4 TIA-900-10 NF 2-20V
Text: AMPLIFIERS 50 Ω RF Instrument HIGH POWER 0.5 to 1000 MHz TIA up to 10W +40 dBm output FREQ. (MHz) MODEL NO. TIA-900-10 TIA-1000-4 TIA-1000-1R8 GAIN (dB) fL-f U Min. Flatness Max. 100-900 100-1000 0.50-1000 28 19 35 ±2.5 ±1.5 ±2.0 MAXIMUM POWER (dBm)
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TIA-900-10
TIA-1000-4
TIA-1000-1R8
AP176
AP175
BT412
AP176
BT451
TIA-1000-1R8
TIA-1000-4
TIA-900-10
NF 2-20V
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TIA-1000-1R8
Abstract: 4609
Text: Coaxial RF Instrument Amplifier 50Ω TIA-1000-1R8 High Power 0.50 to 1000 MHz Features • instrument model with built-in power supply, 110V/220V operation • high power output at 3.5dB compression, 37dBm typ. • high gain, 38 dB typ. • high reverse isolation, 80 dB typ.
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10V/220V
37dBm
TIA-1000-1R8
AP175
TIA-1000-1R8
4609
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Untitled
Abstract: No abstract text available
Text: Coaxial RF Instrument Amplifier 50Ω TIA-1000-1R8 High Power 0.50 to 1000 MHz Features • instrument model with built-in power supply, 110V/220V operation • high power output at 3.5dB compression, 37dBm typ. • high gain, 38 dB typ. • high reverse isolation, 80 dB typ.
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10V/220V
37dBm
TIA-1000-1R8
AP175
RANGE00
TIA-1000-1R8
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TIA-1000-1R8
Abstract: No abstract text available
Text: Coaxial RF Instrument Amplifier 50Ω TIA-1000-1R8 High Power 0.50 to 1000 MHz Features • instrument model with built-in power supply, 110V/220V operation • high power output at 3.5dB compression, 37dBm typ. • high gain, 38 dB typ. • high reverse isolation, 80 dB typ.
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TIA-1000-1R8
10V/220V
37dBm
AP175
TIA-1000-1R8
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BT412
Abstract: No abstract text available
Text: AMPLIFIERS 50 Ω RF Instrument HIGH POWER 0.5 to 1000 MHz TIA up to 10W +40 dBm output FREQ. (MHz) MODEL NO. TIA-900-10 TIA-1000-4 TIA-1000-1R8 GAIN (dB) fL-fU Min. Flatness Max. 100-900 100-1000 0.50-1000 28 19 35 ±2.5 ±1.5 ±2.0 MAXIMUM POWER (dBm)
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TIA-900-10
TIA-1000-4
TIA-1000-1R8
AP176
AP175
BT412
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Untitled
Abstract: No abstract text available
Text: Mini-Circuits - Specification for Amplifier - TIA-1000-4 Amplifier print this page TIA-1000-4 Frequency MHz fL - fU GAIN, dB Min. Maximum Power, dBm Dynamic Range VSWR Output Input Max. 1 dB Min. (no Flatness Comp. damage) 100-1000 19 ±1.50 +39.00 +36.00 +25.00
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TIA-1000-4
TIA-1000
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Untitled
Abstract: No abstract text available
Text: Mini-Circuits - Specification for Amplifier - TIA-1000-1R8 Amplifier print this page TIA-1000-1R8 Frequency MHz fL - fU GAIN, dB Min. Maximum Power, dBm Dynamic Range VSWR Output Input Max. 1 dB Min. (no Flatness Comp. damage) NF dB Typ. DC-1000 35 ±2.00 +35.00 +32.00 +7.00
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TIA-1000-1R8
DC-1000
TIA-1000
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Microcontroller Handbook
Abstract: power amplifier 3000W with PCB
Text: Beratung und Vertrieb: SF/2010 IF RF MICROWAVE COMPONENTS GUIDE TM finds the model you need, Instantly. For pricing / availability, complete specifications, data sheets, RoHS compatibility, performance data /curves, pcb layouts, drawings shopping online, see minicircuits.com
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SF/2010
Microcontroller Handbook
power amplifier 3000W with PCB
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Untitled
Abstract: No abstract text available
Text: Coaxial RF Instrument Amplifier 50Ω TIA-1000-4 High Power 100 to 1000 MHz Features • instrument model with built-in power supply, 110V/220V operation • high power output at 3.5dB compression, 42dBm typ. • high reverse isolation, 55 dB typ. • 100% burn-in at +25°C, 48 hrs
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10V/220V
42dBm
TIA-1000-4
AP176
TIA-1000-4
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Untitled
Abstract: No abstract text available
Text: Coaxial RF Instrument Amplifier 50Ω TIA-1000-4 High Power 100 to 1000 MHz Features • instrument model with built-in power supply, 110V/220V operation • high power output at 3.5dB compression, 42dBm typ. • high reverse isolation, 55 dB typ. • 100% burn-in at +25°C, 48 hrs
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TIA-1000-4
10V/220V
42dBm
AP176
10ations
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AP176
Abstract: No abstract text available
Text: RF Instrument ’•'"Ssii-s*, Amplifiers high power up to 10W +40 dBm output .5 to 1000 MHz, 50 ohms MODEL NO FREQ. MHz 'l - 'u GAIN, dB INPUT OUTPUT Max. flatness (1dB comp.) min. m a x . TYP. MIN (no damage) NF dB typ. IP3 dBm typ. In CAPD DATA AC POWER
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TIA-900-10
TIA-1000-4
AP176
AP175
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Untitled
Abstract: No abstract text available
Text: A m p l if ie r s RF Instrument 50 Q High Power 0.5 to 1000 MHz 1| * G A IN , dB 11 •Hi V TIA up to 1OW +40 dBm output FREQ. MHz ¡¡¡111 M A XIM U M POWER. dBm D YN AM IC RANGE ! AC POWER VSWR CAPD DATA Case Style ¡ ¡ ¡ llillll MODEL NO. TIA-900-10
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TIA-900-10
TIA-1000-4
TIA-1000-
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Untitled
Abstract: No abstract text available
Text: A mplifiers RF Instrument 50 Q H ig h P ower 0 .5 to w o o MFlz up to 1OW +40 dBm output G A IN , dB FREQ. MHz MODEL NO* a v : Mfn, Max. MAXIMUM POWER, dBm DYNAM IC RANGE nf Output fnput (le B C o m j .) Max. Typ. W w i.(tiotJt8nc ®) m ty p . VSWR m dBm
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Untitled
Abstract: No abstract text available
Text: A m p l if ie r s 50 Q RF Instrument H ig h P o w e r 0.5 to 1000 MHz up to 1OW +40 dBm output FREQ. (MHz) GAIN (dB) MODEL NO. TIA-900-10 TIA-1000-4 TIA-1000-1R8 100-900 100-1000 0.50-1000 Min. Heines* Max. 28 19 35 ±2.5 ±1.5 ±2.0 MAXIMUM POWER (dBm)
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TIA-900-10
TIA-1000-4
TIA-1000-1R8
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