Untitled
Abstract: No abstract text available
Text: Advance Product Information December 18, 2002 27 - 32 GHz 1W Power Amplifier TGA4509-EPU Key Features • • • • • • • Chip Dimensions 2.4 mm x 1.2 mm x 0.1 mm 22 dB Nominal Gain @ 30 GHz 30 dBm Nominal Pout @ P1dB 25% PAE @ P1dB -10 dB Nominal Return Loss
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Abstract: No abstract text available
Text: Ka-Band Packaged 1W PA TGA4509-SM Key Features • • • • • • Frequency Range: 28-31 GHz 30 dBm Nominal P1dB 22 dB Nominal Gain Bias Conditions: Vd = 6 V, Idq_tot = 420 mA Id = 800mA under RF drive Compact 4 x 4 QFN with 20 leads Package Dimensions: 4.0 x 4.0 x 1.2 mm
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TGA4509
Abstract: No abstract text available
Text: Product Data Sheet August 5, 2008 27 - 31 GHz 1W Power Amplifier TGA4509 Key Features • • • • • • • • 22 dB Nominal Gain @ 30 GHz 30 dBm Nominal Pout @ P1dB 25% PAE @ P1dB -10 dB Nominal Return Loss Built-in Power Detector 0.25-µm mmW pHEMT 3MI
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MMIC code 420
Abstract: No abstract text available
Text: Ka-Band Packaged 1W PA TGA4509-SM Key Features • • • • • • Frequency Range: 28-31 GHz 30 dBm Nominal P1dB 22 dB Nominal Gain Bias Conditions: Vd = 6 V, Idq_tot = 420 mA Id = 800mA under RF drive Compact 4 x 4 QFN with 20 leads Package Dimensions: 4.0 x 4.0 x 1.2 mm
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Untitled
Abstract: No abstract text available
Text: Advance Product Information Jan 17, 2005 27 - 31 GHz 1W Power Amplifier TGA4509-EPU Key Features • • • • • • • • 22 dB Nominal Gain @ 30 GHz 30 dBm Nominal Pout @ P1dB 25% PAE @ P1dB -10 dB Nominal Return Loss Built-in Power Detector 0.25-µm mmW pHEMT 3MI
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Abstract: No abstract text available
Text: Advance Product Information February 14, 2008 Ka-Band Packaged 1W PA TGA4509-SM Key Features • • • • • • Frequency Range: 28-31 GHz 30 dBm Nominal P1dB 19 dB Nominal Gain Bias Conditions: Vd = 6 V, Idq_tot = 420 mA Id = 800mA under RF drive Compact 4 x 4 QFN with 20 leads
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TFN diode
Abstract: No abstract text available
Text: Advance Product Information May 19, 2004 27 - 31 GHz 1W Power Amplifier TGA4509-EPU Key Features • • • • • • • Chip Dimensions 2.4 mm x 1.2 mm x 0.1 mm 22 dB Nominal Gain @ 30 GHz 30 dBm Nominal Pout @ P1dB 25% PAE @ P1dB -10 dB Nominal Return Loss
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Untitled
Abstract: No abstract text available
Text: Advance Product Information September 14, 2006 Ka-Band Packaged 1W PA TGA4509-SM Key Features • • • • • • Frequency Range: 28-31 GHz 30 dBm Nominal P1dB 19 dB Nominal Gain Bias Conditions: Vd = 6 V, Idq_tot = 420 mA Id = 800mA under RF drive
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Abstract: No abstract text available
Text: Advance Product Information February 16, 2005 Ka-Band Packaged 1W PA TGA4509-SM Key Features • • • • Frequency Range: 28-31 GHz 30 dBm Nominal P1dB 19 dB Nominal Gain Bias Conditions: Vd = 6 V, Idq = 420 mA Id = 800mA under RF drive Compact 4 x 4 QFN with 20 leads
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MA 2831
Abstract: No abstract text available
Text: Ka-Band Packaged 1W PA TGA4509-SM Key Features • • • • • • Frequency Range: 28-31 GHz 30 dBm Nominal P1dB 22 dB Nominal Gain Bias Conditions: Vd = 6 V, Idq_tot = 420 mA Id = 800mA under RF drive Compact 4 x 4 QFN with 20 leads Package Dimensions: 4.0 x 4.0 x 1.2 mm
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MA 2831
Abstract: No abstract text available
Text: Ka-Band Packaged 1W PA TGA4509-SM Key Features • • • • • • Frequency Range: 28-31 GHz 30 dBm Nominal P1dB 22 dB Nominal Gain Bias Conditions: Vd = 6 V, Idq_tot = 420 mA Id = 800mA under RF drive Compact 4 x 4 QFN with 20 leads Package Dimensions: 4.0 x 4.0 x 1.2 mm
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TGA1193-EPU
Abstract: TGA4509-EPU
Text: Not Recommended for New Designs Advance Product Information September 9, 2001 TriQuint Recommends the TGA4509-EPU be used for New Designs 27- 32 GHz Ka Band HPA TGA1193-EPU Key Features • • • • • • 0.25 um pHEMT Technology 15dB Nominal Gain at 30GHz
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TGA1172
Abstract: TGA1172-SCC TGA4509-EPU MA2726
Text: Not Recommended for New Designs Product Datasheet September 26, 2002 TriQuint Recommends the TGA4509-EPU be used for New Designs 27 - 32 GHz 1W Power Amplifier TGA1172-SCC Key Features • • • • • • 0.25 um pHEMT Technology 16 dB Nominal Gain 29 dBm Nominal P1dB
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36dBm
28GHz
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TGA1172
0007-inch
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MA2726
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Untitled
Abstract: No abstract text available
Text: Ka-Band Packaged 1W PA TGA4509-SM Key Features • • • • Frequency Range: 28-31 GHz 30 dBm Nominal P1dB 22 dB Nominal Gain Bias Conditions: Vd = 6 V, Idq_tot = 420 mA Id = 800mA under RF drive Compact 4 x 4 QFN with 20 leads Package Dimensions: 4.0 x 4.0 x 1.2 mm
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MA 2831
Abstract: MMIC code 420 ESD 141 RO4003 TGA4509-SM ka-band amplifier
Text: Ka-Band Packaged 1W PA TGA4509-SM Key Features • • • • • • Frequency Range: 28-31 GHz 30 dBm Nominal P1dB 22 dB Nominal Gain Bias Conditions: Vd = 6 V, Idq_tot = 420 mA Id = 800mA under RF drive Compact 4 x 4 QFN with 20 leads Package Dimensions: 4.0 x 4.0 x 1.2 mm
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MMIC code 420
ESD 141
RO4003
ka-band amplifier
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MA 2831
Abstract: RO4003 TGA4509-SM
Text: Advance Product Information November 11, 2005 Ka-Band Packaged 1W PA TGA4509-SM Key Features • • • • • • Frequency Range: 28-31 GHz 30 dBm Nominal P1dB 19 dB Nominal Gain Bias Conditions: Vd = 6 V, Idq_tot = 420 mA Id = 800mA under RF drive Compact 4 x 4 QFN with 20 leads
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Untitled
Abstract: No abstract text available
Text: Advance Product Information March 24, 2008 Ka-Band Packaged 1W PA TGA4509-SM Key Features • • • • Frequency Range: 28-31 GHz 30 dBm Nominal P1dB 22 dB Nominal Gain Bias Conditions: Vd = 6 V, Idq_tot = 420 mA Id = 800mA under RF drive Compact 4 x 4 QFN with 20 leads
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Abstract: No abstract text available
Text: Advance Product Information April 25, 2005 Ka-Band Packaged 1W PA TGA4509-SM Key Features • • • • Frequency Range: 28-31 GHz 30 dBm Nominal P1dB 19 dB Nominal Gain Bias Conditions: Vd = 6 V, Idq = 420 mA Id = 800mA under RF drive Compact 4 x 4 QFN with 20 leads
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10KW
Abstract: TGA4509 TGA4509-EPU 50W 4 GHz linear power amplifier
Text: Advance Product Information January 23, 2003 27 - 32 GHz 1W Power Amplifier TGA4509-EPU Key Features • • • • • • • Chip Dimensions 2.4 mm x 1.2 mm x 0.1 mm 22 dB Nominal Gain @ 30 GHz 30 dBm Nominal Pout @ P1dB 25% PAE @ P1dB -10 dB Nominal Return Loss
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TGA2517
Abstract: TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125
Text: 02/2010 Triquint SEMICONDUCTOR Product Selection Guide 2010 ABOUT TRIQUINT SEMICONDUCTOR ABOUT TRIQUINT SEMICONDUCTOR Corporate Headquarters – Hillsboro, Oregon Corporate Headquarters – Hillsboro, OR Semiconductor is Digital a leading TriQuint TriQuint
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cus937
TGA2517
TQP6M9002
TQM653029
TGS4304
SG-O1-16
TGA2503
TAT7469
TGA9092-SCC
854651
AH125
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TGA2519-SG
Abstract: HPA Ku TGF4350-EPU HPA41 ic 7435 TGC4401-EPU ku vsat amplifier TGA2512 price tga8658 TGA2519
Text: Microwave / Millimeter Wave Products GaAs MMICs and Discretes for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: i n f o - s a l e s @ t q s . c o m
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AsareavailableforkeybandsacrossDCto100GHz
Alldevicesare100%
11GHzCut-OffFreq
TGC1430F-EPU
TGC1430G-EPU
TGC4401-EPU
TriQuintSemiconductor5/06
S11/S22
DC-20
DC-18
TGA2519-SG
HPA Ku
TGF4350-EPU
HPA41
ic 7435
TGC4401-EPU
ku vsat amplifier
TGA2512 price
tga8658
TGA2519
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TGA2517
Abstract: TQP6M9002 TQM7M5013 TGA4943-SL CGB241 TQM6M4003 bt ag402 TGA4956-SM TQM6M4048 TGA9092-SCC
Text: TABLE OF CONTENTS About TriQuint Semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Guide by Market Automotive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4
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TG2H214220-FL
Abstract: TGA2572 TGA2573 lte transceiver TGA2540-FL TQM963014 TGA2517 TQM6M9069 TQP6M9002 TQM7M5013
Text: Product Selection Guide Choose TriQuint’s Innovative RF Solutions Connecting the Digital World to the Global Network Welcome to Our Product Selection Guide Table of Contents About TriQuint Semiconductor.3 Guide by Market Automotive. 4
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ka band lna
Abstract: TGA4820-EPU ka band Limiter HPA Ku diode 142 19C ka Band LNA, mixer TGB2001-EPU HPA-40 ka band power fet ka band space lna
Text: Microwave / Millimeter Wave Products GaAs MMICs for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: [email protected] Web: www.triquint.com TriQuint uses proven 0.25µm power pHEMT and 0.15µm LN processes to design MMICs for
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