Untitled
Abstract: No abstract text available
Text: Product Data Sheet September 27, 2002 TGA4501-SCC 24-31 GHz Ka Band HPA Key Features • 0.25 um pHEMT Technology • 23 dB Nominal Gain • 34.5 dBm Nominal P1dB • 40 dBm IMD3 Typical • Bias 6 V @ 2.1 A Primary Applications • Satellite Ground Terminal
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TGA4501-SCC
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136.21
Abstract: 901 704 16 08 55 TGA4501-EPU TGA4501-SCC 914-28 51815
Text: S-Parameter Data for TGA4501-SCC TGA4501-EPU Vd = 6V, Id = 2.12A ±5% Frequency GHz 20 20.1 20.2 20.3 20.4 20.5 20.6 20.7 20.8 20.9 21 21.1 21.2 21.3 21.4 21.5 21.6 21.7 21.8 21.9 22 22.1 22.2 22.3 22.4 22.5 22.6 22.7 22.8 22.9 23 23.1 23.2 23.3 23.4 23.5
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TGA4501-SCC
TGA4501-EPU
136.21
901 704 16 08 55
TGA4501-EPU
TGA4501-SCC
914-28
51815
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Untitled
Abstract: No abstract text available
Text: Advanced Product Information August 2, 2002 TGA4501-EPU 28-31 GHz Ka Band HPA Key Features • 0.25 um pHEMT Technology • 23 dB Nominal Gain • 34.5 dBm Nominal P1dB • 40 dBm OTOI Typical • Bias 6 V @ 2.1 A Primary Applications • Satellite Ground Terminal
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TGA4501-EPU
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TGA4505-EPU
Abstract: No abstract text available
Text: Product Data Sheet Not Recommended for New Designs July 22, 2003 TGA4501-SCC TriQuint Recommends the TGA4505-EPU be used for New Designs 24-31 GHz Ka Band HPA Key Features • 0.25 um pHEMT Technology • 23 dB Nominal Gain • 34.5 dBm Nominal P1dB • 40 dBm IMD3 Typical
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TGA4501-SCC
Abstract: No abstract text available
Text: Not Recommended for New Designs Product Data Sheet November 19, 2003 TGA4501-SCC TriQuint Recommends the TGA4505-EPU be used for New Designs 24-31 GHz Ka Band HPA Key Features • 0.25 um pHEMT Technology • 23 dB Nominal Gain • 34.5 dBm Nominal P1dB •
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TGA4501-SCC
Abstract: No abstract text available
Text: Product Data Sheet October 7, 2002 TGA4501-SCC 24-31 GHz Ka Band HPA Key Features • 0.25 um pHEMT Technology • 23 dB Nominal Gain • 34.5 dBm Nominal P1dB • 40 dBm IMD3 Typical • Bias 6 V @ 2.1 A Primary Applications • Satellite Ground Terminal
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Untitled
Abstract: No abstract text available
Text: Advanced Product Information December 14, 2001 TGA4501-EPU 28-31 GHz Ka Band HPA Key Features • 0.25 um pHEMT Technology • 18 dB Nominal Gain • 34.5 dBm Nominal P1dB • 40 dBm OTOI Typical • Bias 6 V @ 2.1 A Primary Applications • Satellite Ground Terminal
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TGA4501-EPU
0007-inch
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TGA4501-EPU
Abstract: No abstract text available
Text: Advanced Product Information December 14, 2001 TGA4501-EPU 28-31 GHz Ka Band HPA Key Features • 0.25 um pHEMT Technology • 18 dB Nominal Gain • 34.5 dBm Nominal P1dB • 40 dBm OTOI Typical • Bias 6 V @ 2.1 A Primary Applications • Satellite Ground Terminal
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ka band high power fet amplifier schematic
Abstract: No abstract text available
Text: 0.25-µm mmW pHEMT 2MI Process Data Sheet 4.6 µm PLATING CAP TOP PLATE 2000 Å NITRIDE 0.75 µm FIRST METAL TaN RESISTOR T-GATE ACTIVE REGION OHMIC METAL EXCEPT VIA SEMI-INSULATING GaAs SUBSTRATE VIA UNDER CAP 0.25-µm 2MI Process Cross Section General Description
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12 volt-30 amp power diode
Abstract: ka-band amplifier high power fet amplifier schematic fet ft 30 GHZ ka band high power fet amplifier schematic pHEMT transistor ka-band mixer 10 ghz driver amplifier FET differential amplifier circuit Ka-band
Text: 0.25-µm mmW pHEMT 2MI Process Data Sheet 4.6 µm PLATING CAP TOP PLATE 2000 Å NITRIDE 0.75 µm FIRST METAL TaN RESISTOR T-GATE ACTIVE REGION OHMIC METAL EXCEPT VIA SEMI-INSULATING GaAs SUBSTRATE VIA UNDER CAP 0.25-µm 2MI Process Cross Section General Description
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