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    TF 431 Search Results

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    TF 431 Price and Stock

    McGill Microwave Systems Ltd RG213-TF-4310M(QTY:12M)

    COAX CBL TNC TO 4.3/10
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RG213-TF-4310M(QTY:12M) Ammo Pack 1
    • 1 $103.41
    • 10 $98.71
    • 100 $103.41
    • 1000 $103.41
    • 10000 $103.41
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    McGill Microwave Systems Ltd LMR-400-TF-4310M(QTY:14FT)

    COAX CBL TNC TO 4.3/10
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey LMR-400-TF-4310M(QTY:14FT) Bulk 1
    • 1 $78.16
    • 10 $74.602
    • 100 $78.16
    • 1000 $78.16
    • 10000 $78.16
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    McGill Microwave Systems Ltd LMR-400-FR-TF-4310M(QTY:7M)

    COAX CBL TNC TO 4.3/10
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey LMR-400-FR-TF-4310M(QTY:7M) Ammo Pack 1
    • 1 $123.71
    • 10 $118.083
    • 100 $123.71
    • 1000 $123.71
    • 10000 $123.71
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    McGill Microwave Systems Ltd RG214-LSZH-TF-4310M(QTY:17M)

    COAX CBL TNC TO 4.3/10
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RG214-LSZH-TF-4310M(QTY:17M) Ammo Pack 1
    • 1 $199.48
    • 10 $190.418
    • 100 $199.48
    • 1000 $199.48
    • 10000 $199.48
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    McGill Microwave Systems Ltd LMR-400-DB-TF-4310M(QTY:50M)

    COAX CBL TNC TO 4.1/30
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey LMR-400-DB-TF-4310M(QTY:50M) Ammo Pack 1
    • 1 $393.11
    • 10 $375.238
    • 100 $393.11
    • 1000 $393.11
    • 10000 $393.11
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    TF 431 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TF4311AJ Texas Instruments Quad 2-Input NAND Buffers Original PDF
    TF4311AN Texas Instruments Quad 2-Input NAND Buffers Original PDF
    TF4315AJ Texas Instruments Hex Inverting Buffers Original PDF
    TF4315AN Texas Instruments Hex Inverting Buffers Original PDF
    TF4316AJ Texas Instruments Quad Bilateral Switches Original PDF
    TF4316AN Texas Instruments Quad Bilateral Switches Original PDF

    TF 431 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Ultrafast Photodetectors GmbH

    Abstract: G7096-03
    Text: ULTRAFAST MSM PHOTODETECTORS G4176 SERIES GaAs G7096 SERIES (InGaAs) Ultrafast response of several tens picosecond FEATURES Ultrafast response *1 G4176-03 : tr , tf = 30 ps (Typ.) G7096-03 : tr = 40 ps*1(Typ.) Low dark current G4176 series : 100 pA (Ta=25 °C)


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    G4176 G7096 G4176-03 G7096-03 G4176-03 G4176-01 G7096-01 Ultrafast Photodetectors GmbH G7096-03 PDF

    G4176-03

    Abstract: MSM photodetector G417603 Ultrafast Photodetectors GMbh GaAs MSM G4176 G4176-01 G7096 G7096-01 photodetectors
    Text: PRELIMINARY DATA ULTRAFAST MSM PHOTODETECTORS G4176 SERIES GaAs G7096 SERIES (InGaAs) Ultrafast response of several tens picosecond FEATURES Ultrafast response G4176-03 : tr , tf = 30 ps (Typ.) G7096-03 : tr = 40 ps (Typ.) Low dark current G4176 series : 100 pA (Ta=25 °C)


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    G4176 G7096 G4176-03 G7096-03 G4176-01 G7096-01 G4176-03 MSM photodetector G417603 Ultrafast Photodetectors GMbh GaAs MSM G4176-01 G7096-01 photodetectors PDF

    Untitled

    Abstract: No abstract text available
    Text: ULTRAFAST MSM PHOTODETECTORS G4176 SERIES GaAs Ultrafast response of several tens picosecond FEATURES Ultrafast response *1 tr , tf = 30 ps (Typ.) Low dark current 100 pA (Ta=25 °C) Large photosensitive area 200 mm *1: Values excluding response time of light source, bias tee, assembly circuit,


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    G4176 G4176-03 G4176-01 G4176-03 SE-164 LPRD1022E05 PDF

    G4176-03

    Abstract: G7096-03 G417603 G4176 G7096 LPRD1022J03
    Text: PRELIMINARY DATA 超高速MSMフォトディテクタ G4176シリーズ(GaAs) G7096シリーズ(InGaAs) 超高速応答を実現した受光素子 •特長 ●超高速応答 G4176-03 : tr , tf = 30 ps(Typ.) G7096-03 : tr = 40 ps(Typ.)


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    G4176GaAs G7096InGaAs G4176-03 G7096-03 G4176 G4176-01 G7096-01 G4176-03 G7096-03 G417603 G4176 G7096 LPRD1022J03 PDF

    MIP2

    Abstract: MIP16 MIP805
    Text: Intelligent Power Devices IPDs MIP805 Silicon MOS IC • Features unit: mm 0.25±0.1 Part A M Di ain sc te on na tin nc ue e/ d 12° ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g


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    MIP805 MIP13£ MIP14£ MIP15£ MIP16£ MIP17£ MIP18£ MIP01£ MIP02£ MIP10£ MIP2 MIP16 MIP805 PDF

    Untitled

    Abstract: No abstract text available
    Text: 超高速MSMフォトディテクタ G4176シリーズ(GaAs) 超高速応答を実現した受光素子 •特長 ●超高速応答 *1 tr , tf = 30 ps(Typ.) ●低暗電流 100 pA Ta=25 ℃ ●大受光面積 200 mm□


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    G4176ã G4176-03 G4176-01 G4176-03ã LPRD1022J05 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN5126 ._ 2SC5238 NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications F eatures • High speed tf = 100ns typ . • High breakdown voltage (Vcbo = 1500V).


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    EN5126 2SC5238 100ns 90195YK TA-0415 D0S0412 PDF

    Untitled

    Abstract: No abstract text available
    Text: THICK FILM SURFACE MOUNT NETWORKS RESISTORS •CAPSSCOLS ♦D E U tf LINES SMN SERIES FEATURES □ Standard small outline packages sizes, 14* or 16 Pin. □ Choice of gull-wing or J-lead. □ Epoxy-molded for improved durability and environmental performance.


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    100ppm/Â joint161 50ppm/Â 16-Pln PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI DIGITAL ASSP M66700P/WP DUAL HIGH-SPEED CCD CLOCK DRIVER FEATURES • Output logic amplitude: 12V • High-speed rise/fall time tr = tf = 33ns (typical) Cl = 1000pF • High output “H” level voltage: (Vcc - 1) V minimum • Low output “L” level voltage: 0.5V maximum


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    M66700P/WP 1000pF M66700WPTa 390pF 200pF 680pF M66700 PDF

    UI132

    Abstract: 2SC4425
    Text: Ordering n u m b e r:EN 2848 _ 2 S C 4 4 2 5 NPN Triple Diffused Planar Silicon Transistor Sw itching R egulator A pplications F eatures . High breakdown voltage, high reliability • Fast switching speed tf: 0.1 ps typ • WideASO • Adoption of MBIT process


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    2SC4425 UI132 2SC4425 PDF

    Untitled

    Abstract: No abstract text available
    Text: ß R lIÜ M M tf In te l 28F020 2048K 256K x 8 FLASH MEMORY SmartDie Product Specification Flash Electrical Chip Erase — 2 Second Typical Chip Erase Quick-Pulse Programming Algorithm — 10 ¡xs Typical Byte Program — 4 Second Chip Program 100K Erase/Program Cycles Typical


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    28F020 2048K X28F020-90 ER-20, ER-24, RR-60, AP-316, AP-325, PDF

    2222 031 capacitor philips

    Abstract: TRANSISTOR 43IL 271 Ceramic Disc Capacitors BLF348 015 capacitor philips 2222 032 capacitor MKT Philips VCB228 Philips 2222 capacitor 2222 035 electrolytic capacitor
    Text: P hilips Sem iconductors VHF linear push-pull power MOS transistor PH ILIPS T - tf- lZ INTERNATIONAL 5bE D 711 005b BLF348 D0M3RD3 031 H P H I N PIN CONFIGURATIO N FE A T U R E S • High power gain • Easy power control • Good thermal stability • Gold metallization ensures


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    BLF348 711005b 2222 031 capacitor philips TRANSISTOR 43IL 271 Ceramic Disc Capacitors BLF348 015 capacitor philips 2222 032 capacitor MKT Philips VCB228 Philips 2222 capacitor 2222 035 electrolytic capacitor PDF

    MG100J2YS1

    Abstract: No abstract text available
    Text: GTR MODULE SILICON N CHANNEL IGBT MG100J2YS1 HIGH P O W E R S W I T C H I N G APPLICATIONS, M O T O R CONT R O L APPLICATIONS. . High Input Impedance . High Speed : tf=0.35;is Max. trr=0.25ns(Max.) . Low Saturation Voltage : VcE(sat)=4.0V(Max.) . Enhancement-Mode


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    MG100J2YS1 MG100J2YS1 PDF

    t51q

    Abstract: No abstract text available
    Text: <g MOTOROLA Military 10506 Triple 4-3-3 Input NOR Gate ELECTRICALLY TESTED PER: MIL-M-38510/06004 HP0 unni The 10506 is a triple 4-3-3 input NOR gate. • 35 mW Max/Gate No Load) • tp(j = 2.8 ns typ • tr, tf = 2.0 ns typ (20% - 80%) AVAILABLE AS PIN ASSIGNMENTS


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    MIL-M-38510/06004 10506/BXAJC MC12015DR2 t51q PDF

    transistor tt 2222

    Abstract: C7f TRANSISTOR BLY92C BLY92C/01 BLY92
    Text: Philips Semiconductors b b S 3 T 3 1 Q 0 2 tì 7 4 0 CHT • A P X ^ u c ^ p e c m c a tfó n BLY92C/01 VHF power transistor N AUER PHILIPS/DISCRETE b*lE » PIN CONFIGURATION DESCRIPTION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,


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    BLY92C/01 OT122F PINNING-SOT122F_ MBB012 transistor tt 2222 C7f TRANSISTOR BLY92C BLY92C/01 BLY92 PDF

    Untitled

    Abstract: No abstract text available
    Text: M M O T O R O LA Military 10503 Quad 2-Input OR Gate ELECTRICALLY TESTED PER: MPG 10503 The 10503 is a quad 2 input OR gate. The 10503 provides one gate with OR/NOR outputs. • 40 mW Max/Gate (No Load) M P 0 u if iir • tpd = 2.0 ns typ • tr, tf = 2.0 ns typ (20% - 80%)


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    10503/BXAJC PDF

    Untitled

    Abstract: No abstract text available
    Text: M m o t o r o Military 10504 l a Quad 2-Input AND Gate ELECTRICALLY TESTED PER: MIL-M-38510/06201 The 10504 is a quad 2 input AND gate. One of the gates has AND/ NAND outputs available. M P 0 /////// • 50 mW Max/Gate (No Load) • tpd = 2.7 ns typ • tr, tf = 2.0 ns typ (20% - 80%)


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    MIL-M-38510/06201 10504/BXAJC PDF

    E10505

    Abstract: No abstract text available
    Text: M M O T O R O L A Military 10505 Triple 2-3-2 OR/NOR Gate ELECTRICALLY TESTED PER: MIL-M-38510/06003 MPO UHM Th e 10505 is a triple 2-3-2 input OR/NOR gate. • 35 mW Max/Gate (No Load) • tpcj = 2.0 ns typ • tr, tf = 2.0 ns typ (20% - 80% ) A V A ILA B LE A S


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    MIL-M-38510/06003 10505/BXAJC MC12015DR2 E10505 PDF

    BP75N

    Abstract: 7MBP75NA060-01 onsi
    Text: •B±%ìm-j.-zfa5i? h tr= = Fuji New Semiconductor Products _ , v . i [ ± IG B T - IP M N V U — X • ♦ ■ 600V/75A/7tfófi 7M B P 75NA 060-01 Jt Features 7 h 7. -f 7 7 -pte-tf— v • & S < X '- Z M & lm # ; * r h la il't i ■ Low sw itch in g -su rg e and noise


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    7MBP75Ã A060-01 00V/75A/7 DDDS74S 7MBP75NA060-01 BP75N 7MBP75NA060-01 onsi PDF

    LX431B

    Abstract: LX431C LX431
    Text: - 266 - • CR.BOX a m & iS fë Ta =25*C ^ # L X 4 3 1 B, L X 4 3 1 C Vcc (x u V ^ ( r a = 25’C) 14 * ÜL le VccfV) iftl 5e ft ft 5e ft 'I' « * Vcc n 12 — + 1 8 V V,d + 300 V fr Vi V Pd Icc 2X 105 -15 - 5 ±10 Vo '] 1 »J 5Ë $ h ft & m tf. m 5e m te


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    2X105 LX431B LX431C 3X1011 LX431B LX431C LX431 PDF

    ED6A

    Abstract: e91e ed9b E17A ed9a E5AF E2AF ea93 TOSHIBA ADDC ed4b
    Text: TOSHIBA TLCS-870 V g y T 'tì, TLCS-870 > V - X f£JS Sii & f i ^ Ko TlEÎÈ L X t o 1 . 8.1 1 LD A, (x) ^ í y ^ fj Í0 8 H' -7 > t “ ÿ CDU - K l (ì-tf n T-x > ü fg ^ á b f) Í - t 0 f!l x. tì\ i co LD A, (x) ti, x #±Ü1îO^ -Ç V b ~r ^ K$%❖ jitf b b %


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    TLCS-870 TLCS-870 RAMcO00FC 0102H 00FCH 11110000B 11011000B 11111111B 00001111B 10100110B ED6A e91e ed9b E17A ed9a E5AF E2AF ea93 TOSHIBA ADDC ed4b PDF

    Untitled

    Abstract: No abstract text available
    Text: t ' tT IC AN306 AN 306 VTR * 7 I IS APC mn/VTR Color APC Circuit ^/D escription AN 306 l i , VTR <r>ij y — APC E1S# ¿ l T t ä l t ? tl fWHÜ&T-fo I ^ iS /F e a tu re s • s i , ti 7 — n É tt-y tf& z .fr ñ íñ 'é • a p c ias&<7 3f ^ i) r x t s M i S i ^ w


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    AN306 767kHz 688kHz 01/iF PDF

    LM 4138

    Abstract: HL 482 RAM 4163 cd 4162 GFIJ c 4161
    Text: TO SH IB A TLCS-870/X V 3 y - t r í i , TLCS-870/X v V - X 1.10.1 t< flJ g S íift'íív ^ c o v i-c ia ili L T $¿3S/3£Í& B n ^ 1 LD A, (x) ^ í y ^ fj Í08H' -7 > t “ #±Ü liO ^ ï 'J fi-tf n f X h ÿ (?) n — ^ K$% ❖ j i t f b b %> f) t “ -tfn T-x M l f g H Í -9 i ¿ H i <0,


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    TLCS-870/X 000FC 00102H 00FCH 11110000B 11011000B 11111111B 00001111B 10100110B LM 4138 HL 482 RAM 4163 cd 4162 GFIJ c 4161 PDF

    nec 7815

    Abstract: transistor NEC D 986 ic LC 7815 6111 WA NEC D 986 2SA1847 ic 7815 M/NEC 7815
    Text: ~7~ — $ y • — h ÿ i j n > / \° 7 - S ilic o n P o w e r T r a n s is t o r 2SA1847 P N P X f $ * y T JU M y y ^ 2SA1847&, > h 7 > y ' X ^ h-7>v^^TföVcE(sat ThFE^' t'<7)TDC/DC=]>/\'U T U íS T -T o 7 i / T ) \ s T - £ > 7 m & T & t o n m * :ñ im t i: ''S v 'r - ;yr*¡ti>v, n £ i = i *


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    2SA1847 2SA1847& D15593JJ2V0DS00 nec 7815 transistor NEC D 986 ic LC 7815 6111 WA NEC D 986 2SA1847 ic 7815 M/NEC 7815 PDF