Brown Boveri induction Motor
Abstract: sj 2025 ic sj 2025 ASEA fast thyristor berulub F GD Rectifiers BROWN BOVERI servo motor bn16 brown Boveri diode Diode BN16
Text: IGBT Module Half-Bridge Configuration VII200-12G4 IC DC VCES VCE(sat) 3 High Short Circuit SOA Capability Symbol Test Conditions VCES VCGR T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MΩ VGES VGEM Continuous Transient IC25 IC100 ICM T C = 25°C
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VII200-12G4
IC100
Brown Boveri induction Motor
sj 2025
ic sj 2025
ASEA fast thyristor
berulub F
GD Rectifiers
BROWN BOVERI servo motor
bn16
brown Boveri diode
Diode BN16
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western 142c
Abstract: ge c20f intel 8231 MCS-51 MACRO ASSEMBLER V2.2 854140 1401 intel 83C51FA ASM51 8635 intel 910-555
Text: APPLICATION BRIEF September 1988 Software Serial Port Implemented with the PCA BETSY JONES ECO APPLICATIONS ENGINEER k lntelorporat~on.1988- I Order Number: 270531-002 lntel Corporation makes no warranty for the use of its products and assurnes no responsibility for any errors which may
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ACE51,
ACE96.
ACE180
/TP491/059014M/PE
western 142c
ge c20f
intel 8231
MCS-51 MACRO ASSEMBLER V2.2
854140
1401 intel
83C51FA
ASM51
8635 intel
910-555
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Untitled
Abstract: No abstract text available
Text: TRANSITRONIX DC/DC Converter Series Datasheet Datasheet # U010022 TEU-series Single and Dual Output DC/DC Converter – Regulated > 10-Watts > Ultra-Wide 4:1 Input Range > Efficiencies to 80% (typical) > > Short Circuit Protection > 1,500 VDC Isolation ELECTRICAL SPECIFICATIONS
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U010022
10-Watts
2400mA
2000mA
833mA
667mA
30mVp-p
100mVp-p
TEU28H03K10-2
TEU28H05K10-2
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18V75V
Abstract: No abstract text available
Text: TRANSITRONIX DC/DC Converter Series Datasheet Datasheet # U012020 TEU-series Single Output DC/DC Converter - Regulated > 12-Watts > Wide 4:1 Input Range > Efficiencies to 88% > Remote Control > 1,500 VDC Isolation ELECTRICAL SPECIFICATIONS All specifications are typical at nominal input, full load, and 25°C unless otherwise noted.
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U012020
12-Watts
3500mA
2400mA
1000mA
800mA
85mVp-p
TEU28H03K12
18V75V
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input 9V 18V output 5V 1000mA
Abstract: 18V75V
Text: TRANSITRONIX DC/DC Converter Series Datasheet Datasheet # U005021 TEU-series Single and Dual Output DC/DC Converter - Regulated > 5-Watts > Ultra-wide 4:1 Input Range > Efficiencies to 80% > No Heat Sink Required > No Other Components Required > 1,600 VDC Isolation
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U005021
1200mA
1000mA
500mA
500mA
250mA
400mA
200mA
40mVp-p
input 9V 18V output 5V 1000mA
18V75V
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lm 1741
Abstract: tda power amplifier circuit diagram audio amplifier tda ic tda 2006 TDA audio power amplifier
Text: TDA 2006 TEUSPOJMKIK] electronic Creative Technologies AUDIO POWER AMPLIFIER Technology: Bipolar Features: o Outputstage short circuit protected o Characteristic specification according to DIN 45000 o Thermal shut down protected o Simple mounting Case: 5-leads special case plastic
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5S70
Abstract: No abstract text available
Text: 2 SE D fc^QMS? 0 0 0 0 3 7 3 ON CHIP SYSTEMS t. T-TS-S CURTIS ELECTROMUSIC SPECIALTIES 110 Highland Ave. Los Gatos, CA USA 408) 395-3350 TLX 499-2868 C E M 5 5 7 0 BUS CONTROLLED SIGNAL PROCESSOR Preliminary, January 1987 Description ' The CEM 5570 is an audio signal processing block controllable
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it-13-81
HC/38
12//Sâ
5S70
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29LV008B
Abstract: MBM29LV008T
Text: FUJITSU SEMICONDUCTOR DATASHEET DS05-20825-1E Polling and Toggle Bit f^ j^ fé 'fp r^ ^ é c tio n of program or erase cycle completion • Ready-Busy output RY/BY '//;>;.-./>/ Hardware method for detecéioà^of'program or erase cycle completion • Automatic sleep modfrv;///
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DS05-20825-1E
MBM29LV008T/MBM29LV008B
F9609
29LV008B
MBM29LV008T
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29F800TA
Abstract: 29f800ba MBM29F800 29F800T
Text: • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP I (Package suffix: PFTN - Normal Bend Type, PFTR - Reversed Bend Type)
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48-pin
44-pin
F9811
29F800TA
29f800ba
MBM29F800
29F800T
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vfd 5x7
Abstract: JIS-C-6220 T90MS EIS BMW 4116 ram ic 6 digit VFD BCM sdk M66004SP VFd 5X7 DOT M66004
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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M66004SP/FP
16-DIGIÃ
vfd 5x7
JIS-C-6220
T90MS
EIS BMW
4116 ram ic
6 digit VFD
BCM sdk
M66004SP
VFd 5X7 DOT
M66004
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UEI 410
Abstract: DM54S74J DM54S74W DM74S74M DM74S74N J14A M14A N14A W14B
Text: June 1989 D M 54S 74/D M 74S 74 Dual P o sitive-E dge-Triggered D Flip-Flops w ith Preset, Clear, and C om p lem en tary O utputs General Description This device contains two independent positive-edge-trig gered D flip-flops with complementary outputs. The informa
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DM54S74/DM74S74
UEI 410
DM54S74J
DM54S74W
DM74S74M
DM74S74N
J14A
M14A
N14A
W14B
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Untitled
Abstract: No abstract text available
Text: ça WHITE /MICROELECTRONICS WF4M32-XXX5 4MX32 5V FLASH MODULE, SMD 5962-97531 pending PRELIMINARY* FEATURES • Access Times of 1 0 0 ,1 2 0 ,150ns ■ User configurable as 8Mx16 or 16Mx8 in HIP and G4T packages. ■ Packaging: • 66-pin, PGA Type, 1.385 inch square, Hermetic Ceramic
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WF4M32-XXX5
4MX32
150ns
8Mx16
16Mx8
66-pin,
01HXX*
64KByte
120ns
02HXX*
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tower pro sg 90
Abstract: No abstract text available
Text: SGS-THOMSON Æ M28F410 M28F420 ÍL [ fï C M O S 4 Megabit x8 or x16, 7 Blocks FLASH M E M O R Y ADVANCE DATA DUAL x8 andx16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP56 and S044 MEMORY ERASE in BLOCKS - One 16K Byte or 8K Word Boot Block (top or bottom location) with hardware write and
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M28F410
M28F420
andx16
TSOP56
20/25mA
M28F410,
7W1S37
tower pro sg 90
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Untitled
Abstract: No abstract text available
Text: JAt. ’ o « * ’ ^ A DIGITAL ASSP MITSUBISHI M66004SP/FP 16 Digit 5x7 Segment VFD Controller/Driver DESCRIPTION PIN CONFIGURATION TOP VIEW The M66004SP/FP is a controller/driver for 16 digit, 5x7 segment vacuum fluorescent displays (VFD). The M66004SP/FP is made using
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M66004SP/FP
M66004SP/FP
DIG11-
-DIG13
J-MDIG15
DIG06-Â
MDS-ASSP-02-06-91-
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C 4429
Abstract: R4421-02
Text: V «UK£ 1 3 N 0 V 20-6277d - Z O- I Ï 7 Ï U a3awnN ONiMvaa 3~nyOS,vSUl UüüJNi sysiiQ ^1» '+ ININ 900- î 030 fr9/t + DVHJ S3 0 N V U 3 1 0 1 OMOí NJh s i n i j dlv 1 O N iM vaa A s s v SU I 62017~\ZOŸ H ~d3d : ¿ Q l‘ NMVdO 9C2‘ a io qxhd kJ JddV
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R4421-02
03h-i
R4428-
R4427
R4426-
R4425
R4424-
R4423
29S-s29
R4422-
C 4429
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Untitled
Abstract: No abstract text available
Text: A D V A N C E IN F O R M A T IO N AMDtl Am29SL800B 8 Megabit 1 M X 8-Bit/512 K x 16-Bit CMOS 1.8 Volt-only Super Low Voltage Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 1.8 to 2.2 V for read, program, and erase operations
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Am29SL800B
8-Bit/512
16-Bit)
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pb12jn
Abstract: thomson lcc PTC THERMISTOR FOR DEGAUSSING PTC thermistors for degaussing
Text: iS É ii rp Q ‘TTVVÇ^*, \ ¡5X • Ü H p f X* N ; ; ^ ; ; « & \\ w í. ssêtosss^âsss^s^ssâs^0 » K'XsviV.vN <. xÿ. VAJVM W M \SVM \VM W AW M SyM W Xw'fl<\W rtW M SV/rt\S / vw ^ V. s^N ' .w % i N ••S > s s . » V * \ V Í ^ * ' V *■*. ’.v.’.sv!;
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h/155
pb12jn
thomson lcc
PTC THERMISTOR FOR DEGAUSSING
PTC thermistors for degaussing
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ECL81
Abstract: ecf82 ecf 802 ey51 EM 80 ECC 85 EL-84 tube EABC 80 tube tube cathodique Rafena
Text: M it diesem Katalog wollen wir Ihnen in kurzer Form Einblick in das Produk tionsprogramm unseres Werkes geben. Sollten Sie für einzelne G e rä te besonderes Interesse haben, so schreiben Sie uns bitte; wir übersenden Ihnen gern d ie gewünschten ausführlichen
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nana30Ha
wana30H
ECL81
ecf82
ecf 802
ey51
EM 80
ECC 85
EL-84 tube
EABC 80 tube
tube cathodique
Rafena
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Untitled
Abstract: No abstract text available
Text: SN74CBT3386 10-BIT FET BUS-EXCHANGE SWITCH WITH EXTENDED VOLTAGE RANGE SCDS022E - MAY 1995 - REVISED MARCH 1998 Functionally Equivalent to QS3386 5-Q Switch Connection Between Two Ports TTL-Compatible Input Levels Uses Vce of 5 V and Vpp of -2 V Package Options Include Plastic Shrink
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SN74CBT3386
10-BIT
SCDS022E
QS3386
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Untitled
Abstract: No abstract text available
Text: SN54LV125A, SN74LV125A QUADRUPLE BUS BUFFER GATES WITH 3-STATE OUTPUTS SCES124A - DECEMBER 1997 - REVISED MARCH 1998 EPICM Enhanced-Performance Implanted CMOS Process SN54LV125A . . . J OR W PACKAGE SN74LV125A . . . D, DB, DGV, NS, OR PW PACKAGE (TOP VIEW)
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SN54LV125A,
SN74LV125A
SCES124A
JESD17
MIL-STD-883,
300-mil
SN54LV125A
SN74LV125A
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ICL7196
Abstract: ICL7136CPL 3 TA 7136 p LEM LT 100S ICL7136cpl
Text: 19-0951; Rev 2; 9/96 y n y ix iy n Low Power, 3Î6 Digit A /D Convertor The Maxim ICL7136 is a monofithic analog to digital con verter with very high input impedance. On-board active components include segment drivers, segment decod ers, voltage reference and a clock circuit. The ICL7136
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ICL7136
15pVp
ICL7136
ICL7196
ICL7136CPL 3
TA 7136 p
LEM LT 100S
ICL7136cpl
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hy53c464ls
Abstract: A211D HY53C464LF70 hy53c464 hvof
Text: HY53C464 Series “H Y U N D A I 64Kx 4-bit CMOS DRAM DESCRIPTION The HY53C464 is fast dynamic RAM organized 65,536 x 4-bit. The HY53C464 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.
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HY53C464
330mil
18pin
335f8
1AA02-20-MAY94
HY53C464S
hy53c464ls
A211D
HY53C464LF70
hvof
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O09P
Abstract: No abstract text available
Text: TMS29LF400T, TMS29LF400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH MEMORIES • • • • • • • • • 524288 By 8 Bits 262144 By 16 Bits Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors - One 32K-Byte/16K-Word Sector
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TMS29LF400T,
TMS29LF400B
8-BIT/262144
16-BIT
44-Pin
48-Pin
O09P
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Untitled
Abstract: No abstract text available
Text: TO SH IBA TH50VSF1302/1303AAXB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SR A M A N D FLASH M E M O R Y M IXED MULTI CHIP PACKAGE DESCRIPTION The TH50VSF1302/1303AAXB is a package of mixed 2,097,152-bit SRAM and 8,388,608-bit FLASH
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TH50VSF1302/1303AAXB
TH50VSF1302/1303AAXB
152-bit
608-bit
48-pin
40//A
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