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    TEST CIRCUITS FOR MOSFET CAPACITANCE Search Results

    TEST CIRCUITS FOR MOSFET CAPACITANCE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    TEST CIRCUITS FOR MOSFET CAPACITANCE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    diode AR S1 99

    Abstract: S3 DIODE schottky 486 smps
    Text: Advanced Technical Information Parallel, Buck & Boost Configurations for SMPS, PFC & Motor Control Circuits S1 HiPerFET MOSFET Diode Test Conditions VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 100 V VGS Continuous ±20 V Transient


    Original     		PDF 100N10S1 100N10S2 100N10S3 diode AR S1 99 S3 DIODE schottky 486 smps

    48N50Q

    Abstract: buck pfc IXFE44N50QD2 IXFE44N50QD3 IXFE48N50QD2 IXFE48N50QD3 44N50Q IXFK48N50
    Text: HiPerFETTM Power MOSFETs VDSS IXFE44N50QD2 IXFE44N50QD3 500 V IXFE48N50QD2 IXFE48N50QD3 500 V Buck & Boost Configurations for PFC & Motor Control Circuits ID cont RDS(on) trr 0.12 Ω 35 ns 0.11 Ω 35 ns 39 A 41A 3 3 4 2 2 4 D2 HiPerFET MOSFET Symbol Test Conditions


    Original     		PDF IXFE44N50QD2 IXFE44N50QD3 IXFE48N50QD2 IXFE48N50QD3 44N50Q 48N50Q IXFK48N50Q IXFE44N50 48N50Q buck pfc 44N50Q IXFK48N50

    calculating of switching transformer

    Abstract: 200khz power mosfet test circuits for Mosfet capacitance mosfet power totem pole CIRCUIT pulse transformer fet zvs ZCS 3 5 3 5 calculating rectifier circuits fast switching FET forward converter zvs driver
    Text: A More Realistic Characterization Of Power MOSFET Output Capacitance Coss The Power MOSFET has gained popularity and become the dominant switching device in power electronics since 1975. Its fast switching speed has extended power conversion switching frequencies from the 20kHz range of


    Original     		PDF 20kHz 100kHz. calculating of switching transformer 200khz power mosfet test circuits for Mosfet capacitance mosfet power totem pole CIRCUIT pulse transformer fet zvs ZCS 3 5 3 5 calculating rectifier circuits fast switching FET forward converter zvs driver

    test circuits for Mosfet capacitance

    Abstract: pulse transformer fet 100C AN-1001 how to test mosfet A More Realistic Characterization of Power MOSFET Output Capacitance Coss
    Text: Application Note AN-1001 A More Realistic Characterization of Power MOSFET Output Capacitance Coss Table of Contents 1. Introduction . 1 Power MOSFETs and switching frequency . 1


    Original     		PDF AN-1001 test circuits for Mosfet capacitance pulse transformer fet 100C AN-1001 how to test mosfet A More Realistic Characterization of Power MOSFET Output Capacitance Coss

    2N60B

    Abstract: 2N60A 2N60 power mosfet 2N60 TO-251 UTC 2n60 2n60 MOSFEt 2N60G 2N60L equivalent utc 2n60l 2n60 equivalent
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ 1 TO-220F 1 TO-220F1 FEATURES * RDS ON = 5Ω@VGS = 10V * Ultra Low gate charge (typical 9.0nC) * Low reverse transfer capacitance (CRSS = typical 5.0 pF) * Fast switching capability


    Original     		PDF O-220 O-220F O-220F1 QW-R502-053 2N60B 2N60A 2N60 power mosfet 2N60 TO-251 UTC 2n60 2n60 MOSFEt 2N60G 2N60L equivalent utc 2n60l 2n60 equivalent

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N65L Preliminary 2A, 650V N-CHANNEL POWER MOSFET „ 1 1 TO-220F 1 TO-220F1 FEATURES * RDS ON = 5.0Ω@VGS = 10V * Ultra Low gate charge (typical 9.0nC) * Low reverse transfer capacitance (CRSS = typical 5.0 pF) * Fast switching capability


    Original     		PDF 2N65L O-220 2N65L O-220F O-220F1 QW-R502-580

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 4N65 Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET „ 1 1 1 TO-220F1 TO-220F2 FEATURES * RDS ON = 2.5Ω @VGS = 10 V * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 8.0 pF ) * Fast Switching Capability


    Original     		PDF O-220F O-220 O-220F1 O-220F2 QW-R502-397

    4n65

    Abstract: 4n65l mosfet 4n65 mosfet 4n60 A4N60 4n60 to252 utc 4n65l 4A650V
    Text: UNISONIC TECHNOLOGIES CO., LTD 4N65 Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET „ 1 1 1 TO-220F1 TO-220F2 FEATURES * RDS ON = 2.5Ω @VGS = 10 V * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 8.0 pF ) * Fast Switching Capability


    Original     		PDF O-220 O-220F O-220F1 O-220F2 QW-R502-397 4n65 4n65l mosfet 4n65 mosfet 4n60 A4N60 4n60 to252 utc 4n65l 4A650V

    2n60b

    Abstract: 2N60A
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ 1 TO-220F 1 TO-220F1 FEATURES * RDS ON = 5Ω@VGS = 10V * Ultra Low gate charge (typical 9.0nC) * Low reverse transfer capacitance (CRSS = typical 5.0 pF) * Fast switching capability


    Original     		PDF O-220 O-220F O-220F1 QW-R502-053 2n60b 2N60A

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N65 Power MOSFET 1.2A, 650V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION FEATURES „ 1 1 TO-220 TO-220F 1 1 * RDS ON =12.5Ω@VGS = 10V. * Ultra Low gate charge (typical 5.0nC) * Low reverse transfer capacitance (CRSS = typical 3.0 pF)


    Original     		PDF OT-223 O-220 O-220F QW-R502-579

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET „ 1 1 1 TO-220F1 TO-220F2 FEATURES * RDS ON = 2.5Ω @VGS = 10 V * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer CAPACITANCE ( CRSS = typical 8.0 pF ) * Fast Switching Capability


    Original     		PDF O-220F O-220 O-220F1 O-220F2 QW-R502-061

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 4N65 Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET „ 1 1 1 TO-220F1 TO-220F2 FEATURES * RDS ON = 2.5Ω @VGS = 10 V * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 8.0 pF ) * Fast Switching Capability


    Original     		PDF O-220F O-220 O-220F1 O-220F2 QW-R502-397

    utc 4n60l

    Abstract: 4n60e mosfet 4n60 utc 4n60g 4N60 4n60l 4N60-E UTC4N60 4N60G-TQ3-T A4N60
    Text: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET „ 1 1 1 TO-220F1 TO-220F2 FEATURES * RDS ON = 2.5Ω @VGS = 10 V * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer CAPACITANCE ( CRSS = typical 8.0 pF ) * Fast Switching Capability


    Original     		PDF O-220 O-220F O-220F1 O-220F2 QW-R502-061 utc 4n60l 4n60e mosfet 4n60 utc 4n60g 4N60 4n60l 4N60-E UTC4N60 4N60G-TQ3-T A4N60

    1N60 mosfet

    Abstract: 1N60B diode 1n60 1N60G 1N60L 1n60 diode mosfet 1N60 1N60 Diode Equivalent 1N60 1N60 TO92
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET 1 „ DESCRIPTION FEATURES 1 1 TO-220 TO-220F 1 1 * RDS ON =11.5Ω@VGS = 10V. * Ultra Low gate charge (typical 5.0nC) * Low reverse transfer capacitance (CRSS = typical 3.0 pF)


    Original     		PDF OT-223 O-220 QW-R502-052 1N60 mosfet 1N60B diode 1n60 1N60G 1N60L 1n60 diode mosfet 1N60 1N60 Diode Equivalent 1N60 1N60 TO92

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET „ 1 1 1 TO-220F1 TO-220F2 FEATURES * RDS ON = 2.5Ω @VGS = 10 V * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer CAPACITANCE ( CRSS = typical 8.0 pF ) * Fast Switching Capability


    Original     		PDF O-220F O-220 O-220F1 O-220F2 QW-R502-061

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 4N65 Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET „ 1 1 1 TO-220F1 TO-220F2 FEATURES * RDS ON = 2.5Ω @VGS = 10 V * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 8.0 pF ) * Fast Switching Capability


    Original     		PDF O-220F O-220 O-220F1 O-220F2 QW-R502-397

    600V 2A SOT223 MOSFET N-channel

    Abstract: 1n60b 1n60 diode T92 DIODE 1N60 mosfet MOSFET 50V 100A TO-220 1N60 TO92 diode 1n60 Diode AA3 1N60G
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET 1 „ DESCRIPTION FEATURES 1 1 TO-220 TO-220F 1 1 * RDS ON =11.5Ω@VGS = 10V. * Ultra Low gate charge (typical 5.0nC) * Low reverse transfer capacitance (CRSS = typical 3.0 pF)


    Original     		PDF OT-223 O-220 QW-R502-052 600V 2A SOT223 MOSFET N-channel 1n60b 1n60 diode T92 DIODE 1N60 mosfet MOSFET 50V 100A TO-220 1N60 TO92 diode 1n60 Diode AA3 1N60G

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N65 Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET  TO-220F 1 1 TO-220F1 TO-262 1 1 TO-251 FEATURES * R DS ON = 5.0Ω @ V GS = 10V * Ultra Low gate charge (typical 9.0nC) * Low reverse transfer capacitance (C RSS = typical 5.0 pF)


    Original     		PDF O-220F O-220F1 O-262 O-251 O-220 QW-R502-370

    12N60G

    Abstract: 12N60
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET „ 1 1 TO-220F TO-220F1 FEATURES * RDS ON = 0.8Ω @VGS = 10 V * Ultra low gate charge ( typical 42 nC ) * Low reverse transfer capacitance ( CRSS = typical 25 pF ) * Fast switching capability


    Original     		PDF 12N60 O-220F O-220 12N60 O-220F1 O-262 QW-R502-170 12N60G

    led lifespan

    Abstract: No abstract text available
    Text: CPC1590 Optically Isolated Gate Driver INTEGRATED CIRCUITS DIVISION PRELIMINARY Driver Characteristics Description Parameter Rating Units Input Current 2.5 mA Switching Speed IF=5mA, MOS Input Capacitance=4nF td(on) 12 td(off1) (VGS=2V) 125 td(off2) (VGS=1V)


    Original     		PDF CPC1590 CPC1590 DS-CPC1590-R00C led lifespan

    Untitled

    Abstract: No abstract text available
    Text: CPC1590 Optically Isolated Gate Driver INTEGRATED CIRCUITS DIVISION Driver Characteristics Description Parameter Rating Units Input Current 2.5 mA Switching Speed IF=5mA, MOS Input Capacitance=4nF td(on) 12 td(off1) (VGS=2V) 125 td(off2) (VGS=1V) 210 s


    Original     		PDF CPC1590 3750Vrms CPC1590 DS-CPC1590-R01

    70N06

    Abstract: Mosfet 70n06 70N06G
    Text: UNISONIC TECHNOLOGIES CO., LTD 70N06 Power MOSFET 70 Amps, 60 Volts N-CHANNEL POWER MOSFET „ 1 TO-262 FEATURES * RDS ON = 15mΩ@VGS = 10 V * Ultra low gate charge ( typical 90 nC ) * Low reverse transfer Capacitance ( CRSS = typical 80 pF ) * Fast switching capability


    Original     		PDF 70N06 O-220 70N06 O-262 O-263 70N06L-TA3-T 70N06G-TA3-T 70N06L-T2t QW-R502-089 Mosfet 70n06 70N06G

    MOSFET Drivers

    Abstract: 7202 M7212 "MOSFET Drivers" DS0026 EL7202C EL7212 EL7202CS EL7212C EL7222C
    Text: High Speed Dual Channel Power MOSFET Drivers Features General Description  Industry standard driver replacement  Improved response times  Matched rise and fall times  Reduced clock skew  Low output impedance  Low input capacitance  High noise immunity


    Original     		PDF EL7202C EL7212C EL7222C DS0026 MOSFET Drivers 7202 M7212 "MOSFET Drivers" EL7212 EL7202CS

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 75N75 Power MOSFET 80A, 75V N-CHANNEL POWER MOSFET 1  FEATURES * RDS ON =11mΩ @VGS=10V, ID=40A * Ultra low gate charge ( typical 117 nC ) * Fast switching capability * Low reverse transfer Capacitance (CRSS= typical 240 pF )


    Original     		PDF 75N75 O-220F1 O-220F2 O-263 O-220F O-220 75N75 QW-R502-097