Lake Shore Cryotronics
Abstract: TG-120-CU IMI-7031 tesla Diode GaAlAs Diode AT 330 magnetic diode sensor TG-120 DIODE 4d replacement TG-120PL
Text: 1-12 TG-120 Gallium-Aluminum-Arsenide Diodes Series TG-120 Gallium-Aluminum-Arsenide Diodes* • GaAlAs Diodes • • Voltage-temperature characteristics are monotonic over the useful temperature range from 1.4 K to 500 K. Excellent sensitivity dV/dT at temperatures
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TG-120
Lake Shore Cryotronics
TG-120-CU
IMI-7031
tesla Diode
GaAlAs Diode
AT 330
magnetic diode sensor
DIODE 4d replacement
TG-120PL
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Silicon Diode DT-470
Abstract: LR 207 DT-470-SD-13 DT-470-CU-13 DT-470-SD-12A transistor BR 471 A dt 420 DT-470 DT-470-CY-13 DT-471-SD
Text: 1-6 Silicon Diodes 1987 COMPE R DT-470 and DT-471 Features and Description Silicon Diodes DT-470 Features • Advanced, hermetic ceramic and sapphire packaging with the lowest self-heating errors • Monotonic temperature response over its useful range from 1.4 K to 475 K
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DT-470
DT-471
DT-470
IMI-7031
Silicon Diode DT-470
LR 207
DT-470-SD-13
DT-470-CU-13
DT-470-SD-12A
transistor BR 471 A
dt 420
DT-470-CY-13
DT-471-SD
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Untitled
Abstract: No abstract text available
Text: CurveTracer CT-3100/3200 For High-Power Semiconductor Device Characterization DATA SHEET Emerging energy standards and increasing power consumption demand additional performance capabilities. As such, pressure has been placed on manufacturers to rapidly design, develop and characterize new power devices to develop innovative chipset designs to provide more eficiency.
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CT-3100/3200
CT-DS-0212
CT3100/3200
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DT-670-SD
Abstract: Silicon Diode DT-470 dt 670 c cu DT-670A-SD DT-670C-SD DT-670B-SD DT-670 Lake Shore Cryotronics DT-670E-BR Silicon Diode DT-670
Text: LakeShore DT-670 Series Silicon Diode Temperature Sensor Lake Shore’s DT-670 diode temperature sensors are the most advanced silicon diodes in Lake Shore’s extensive line of cryogenic temperature sensors. Backed by more than thirty years of excellence in cryogenic temperature
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DT-670
DT-670E-BR
DT-670A-SD
DT-670B-SD
DT-670C-SD
DT-670D-SD
DT-670-SD-
DT-670-SD
Silicon Diode DT-470
dt 670 c cu
DT-670A-SD
DT-670C-SD
DT-670B-SD
Lake Shore Cryotronics
DT-670E-BR
Silicon Diode DT-670
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UMX5601
Abstract: 20E07 UMX5601SM PIN DIODE magnetic diode
Text: UMX5601 ULTRA LOW MAGNETIC MOMENT PIN DIODE FOR MRI APPLICATIONS RoHS COMPLAINT KEY FEATURE S DESCRIPTION TM website: www.microsemi.com ABSOLUTE MAXIMUM RATINGS AT 25º C UNLESS OTHERWISE SPECIFIED Rating
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UMX5601
UMX5601
20E07
UMX5601SM
PIN DIODE
magnetic diode
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TESLA DIODES
Abstract: PIN DIODE UMX5101 magnetic diode
Text: UMX5101 ULTRA LOW MAGNETIC MOMENT PIN DIODE FOR MRI APPLICATIONS RoHS COMPLIANT KEY FEATURES The UMX5101 PIN diode series was designed to provide ultra low magnetic PIN diodes for in bore surface coil applications associated with higher field strength 3T and greater MR
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UMX5101
UMX5101
TESLA DIODES
PIN DIODE
magnetic diode
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PIN DIODE
Abstract: No abstract text available
Text: UMX5601 ULTRA LOW MAGNETIC MOMENT PIN DIODE FOR MRI APPLICATIONS RoHS COMPLAINT KEY FEATURES DESCRIPTION TM ABSOLUTE MAXIMUM RATINGS AT 25º C UNLESS OTHERWISE SPECIFIED Symbol Value • SOGO passivated chip • Thermally matched configuration RoHS compliant 1
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UMX5601
UMX5601
PIN DIODE
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Untitled
Abstract: No abstract text available
Text: UMX5601 ULTRA LOW MAGNETIC MOMENT PIN DIODE FOR MRI APPLICATIONS RoHS COMPLIANT KEY FEATURES DESCRIPTION TM ABSOLUTE MAXIMUM RATINGS AT 25º C UNLESS OTHERWISE SPECIFIED Symbol Value • SOGO passivated chip • Thermally matched configuration RoHS compliant 1
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UMX5601
UMX5601
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UMX5101
Abstract: No abstract text available
Text: UMX5101 ULTRA LOW MAGNETIC MOMENT PIN DIODE FOR MRI APPLICATIONS RoHS COMPLIANT KEY FEATURES DESCRIPTION 0B • Ultra low magnetic construction The UMX5101 PIN diodes have a magnetic moment at 7 T of 2E-8 J/T . • Thermally matched configuration The diodes are offered in a surface mount package. The SM package utilizes a square end cap
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UMX5101
UMX5101
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UMX5601TM
Abstract: UMX5601SM UMX5601 UMX5601B
Text: UMX5601 ULTRA LOW MAGNETIC MOMENT PIN DIODE FOR MRI APPLICATIONS RoHS compliant KEY FEATURES DESCRIPTION UMX5601 PIN diodes have a magnetic moment at 7 T of 4E-8 J/T . The diodes are offered in axial or surface mount packages. The SM package utilizes a round end
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UMX5601TM
UMX5601
UMX5601B
UMX5601SM
UMX5601TM
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Untitled
Abstract: No abstract text available
Text: UMX5601 ULTRA LOW MAGNETIC MOMENT PIN DIODE FOR MRI APPLICATIONS RoHS COMPLIANT KEY FEATURES DESCRIPTION TM Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Value Unit 75 -65 to +175 V ºC Operating Temperature Non-Repetitive Peak
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UMX5601
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Ferroxcube 3C8
Abstract: 204T250-3C8 pulse transformer driver ic Amp. mosfet 1000 watt MPS-U10 application note gate driver for h bridge mosfet core 3c8 U 126 204T250 ac step-up transformer winding awg
Text: U-127 APPLICATION NOTE UNIQUE CHIP PAIR SIMPLIFIES ISOLATED HIGH SIDE SWITCH DRIVE John A. O’Connor Application Engineer Motor Control Circuits Abstract High voltage, high current N-channel MOSFETs, now widely accepted in the industry, have found their way into numerous high power designs. As their cost to performance ratio continually improves, gate drive
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U-127
UC3724/UC3725,
U-110
U-126
Ferroxcube 3C8
204T250-3C8
pulse transformer driver ic
Amp. mosfet 1000 watt
MPS-U10
application note gate driver for h bridge mosfet
core 3c8
U 126
204T250
ac step-up transformer winding awg
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Ferroxcube 3C8
Abstract: U-127 204T250-3C8 Dual secondary Transformer UNITRODE U-124 Unitrode U-127 CURRENT TRANSFORMER Isolated mosfet gate drive circuit Amp. mosfet 1000 watt coupler MOSFET DRIVER application note
Text: U-127 APPLICATION NOTE UNIQUE CHIP PAIR SIMPLIFIES ISOLATED HIGH SIDE SWITCH DRIVE John A. O’Connor Application Engineer Motor Control Circuits Abstract High voltage, high current N-channel MOSFETs, now widely accepted in the industry, have found their way into numerous high power designs. As their cost to performance ratio continually improves, gate drive
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U-127
UC3724/UC3725,
Ferroxcube 3C8
U-127
204T250-3C8
Dual secondary Transformer
UNITRODE U-124
Unitrode U-127
CURRENT TRANSFORMER
Isolated mosfet gate drive circuit
Amp. mosfet 1000 watt
coupler MOSFET DRIVER application note
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Untitled
Abstract: No abstract text available
Text: UMX5101 ULTRA LOW MAGNETIC MOMENT PIN DIODE FOR MRI APPLICATIONS RoHS COMPLIANT KEY FEATURES DESCRIPTION 0B • Ultra low magnetic construction The UMX5101 PIN diodes have a magnetic moment at 7 T of 2E-8 J/T . • Thermally matched configuration The diodes are offered in a surface mount package. The SM package utilizes a square end cap
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UMX5101
UMX5101
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KF 517
Abstract: transistor KF 517 Transistoren DDR service-mitteilungen KF517 transistor gt 322 b1 Ziphona bauelemente DDR servicemitteilungen KT326B
Text: SERVICE-MITTEILUNGEN V E B IN D U ST R IE V E R T R IE B R U N D FU N K UND FE R N SE H E N piy!E§HÜ [r a d io -television] APRIL 1976 S5ITS 1-8 SHJLENBANDGERÄT "B 90” TESLA - .B 90" Zu den Importen bei Spulentonbandgeräten wird künftig auch das TESLA-Erzeugnis "B 90"
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III/18/379
KF 517
transistor KF 517
Transistoren DDR
service-mitteilungen
KF517
transistor gt 322 b1
Ziphona
bauelemente DDR
servicemitteilungen
KT326B
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KA206
Abstract: KZZ47 KZZ46 tesla schaltkreise KA206S KA225 KZZ45 KA207 KA221 KA22235
Text: TESLA ELEKTRONICKE 35E D • flTSDS4H QDnai34 1D3 ■ TELC ~T=ö -Oi SILICO N HIGH S P EED DIO D ES SILIZIUM S EH R S C H N E LLE DIODEN KA206 mA V 75 50 Characteristic data • • mW ba Uf °c V at bei Kenndaten If Ir mA pA at bei Ui trr from von If = 5 mA
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T5D544
QDnai34
KA206
KA207
KA206S
KA206,
KZZ45
KZZ46
KZZ47
KZZ47
KZZ46
tesla schaltkreise
KA225
KZZ45
KA221
KA22235
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maa 502
Abstract: Tesla katalog MAA723 Halbleiterbauelemente DDR TAA 141 TESLA KF520 transistor vergleichsliste maa 503 Maa 325
Text: Klaus K. Streng Analoge Integrierte Schaltungen von T E SL A electrónica • Band 142 Klaus K. Streng Analoge Integrierte Schaltungen von TESLA MILITÄRVERLAG DER DEUTSCHEN DEMOKRATISCHEN REPUBLIK 1. Auflage, 1976, 1/— 15. Tausend M ilitärverlag der Deutschen Dem okratischen Republik
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service Tesla B 100
Abstract: Lautsprecher LP service-mitteilungen Radio Fernsehen Elektronik VEB Keramische Werke servicemitteilungen GER-A keramische Werke Hermsdorf VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN service tesla
Text: SERVICE-MITTEILUNGEN VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEH EN 9 != ! r a d i o -television SEITE AUSGABE: JUNI 1 - Das Vollstereo-Tonbandgerät TESLA B 100 zählt zu den Im porten des Jahres 1974• Das Gerät ist als Spulen-Bandgerät konzipiert und verfügt über zwei
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III/18/379
service Tesla B 100
Lautsprecher LP
service-mitteilungen
Radio Fernsehen Elektronik
VEB Keramische Werke
servicemitteilungen
GER-A
keramische Werke Hermsdorf
VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN
service tesla
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KZZ71
Abstract: KZZ74 KZZ72 KZZ76 KZ715 KZ707 KZZ73 KZZ75 KZ755 KZ753
Text: TESLA ELEKTRONICKE 3SE D • flTSDSMM DD0D13b Tflb ■ T ^ lf- ü l TELC SILIC O N ZEN ER DIO D ES 0.28 AND 0.4 W SILIZIUM -ZENERDIODEN 0,28 UND 0.4 W Maximum ratings • Grenzdaten lz Pd R th jc Uz r2 mA W K/W V KZ721 36 0,28 * 0,012 KZ722 30 0,28 1) 0,012
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DD0D13b
KZ721
KZ722
KZ723
KZ724
KZZ71
KZZ72
KZZ73
KZ714
KZ715
KZZ74
KZZ76
KZ707
KZZ75
KZ755
KZ753
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KA262
Abstract: kb105 KA263 KA261 KA267 KB105T KA136 KA206 KA206T ELEKTRONICKE
Text: 01 7^ 0 • TESLA ELEKTRONICKE 3SE D • 0^50544 □DD0133 277 m TELC S ILIC O N PLAIMAR DIO D ES FO R G EN ER A L USE SILIZIU M PL AN AR-DIODEN FÜR A LLG EM EIN EN G EB R A U C H Type Typ KA261 KA262 KA263 KA264 T KA265 Maximu m ratings I fav I f s m 2
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SD544
DD0133
KA261
KA262
KA263
KA267
KA206T
KB105T
kb105
KA136
KA206
KA206T
ELEKTRONICKE
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tesla potentiometer
Abstract: sy320 service Tesla B 100 TESLA AM -piezofilter say 30 t197 transistoren von tesla service-mitteilungen sy 200
Text: SERVICE-MITTEILUNGEN V E B IN D U ST R IE V E R T R IE B R U N D FU N K U N D F E R N S E H E N ¡ B f t j |r a d i o JANUAR «fl SEITE 1976 1 1-6 -teievision 1 MITTEILUNG AUS DSM VEB STERN-RADIO SONNEBERG KOMBINAT STERN-RADIO BERLIN nach den gültigen Unterlagen
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211/BC
tesla potentiometer
sy320
service Tesla B 100
TESLA
AM -piezofilter
say 30
t197
transistoren von tesla
service-mitteilungen
sy 200
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REMA
Abstract: granat 216 Sonneberg DIODE ga TESLA transistor Kombinat VEB A 301 transistor KF 507 tesla 516 maa 550 service-mitteilungen
Text: SERVICE-MITTEILUNGEN V E B IN D U S T R I E V E R T R I E B R U N D F U N K U N D F E R N S E H E N JUL./AUG. 19 7 6 m SEITE 01-10 inämiy 1R A D io -teievlsion 1 GRANAT 516 Ein Exponat der Leipziger Frühjahrsmesse 1976, das in einer kleinen Menge noch im III. Quartal an den Handel ausgeliefert wird, war die
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Param24
52/PS
REMA
granat 216
Sonneberg
DIODE ga
TESLA transistor
Kombinat VEB A 301
transistor KF 507
tesla 516
maa 550
service-mitteilungen
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VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN
Abstract: service-mitteilungen unitra industrievertrieb Servicemitteilungen ddr veb Scans-048 "service-mitteilungen" Leipzig S2562
Text: SERVICE-MITTEILUNGEN VEB IN D U ST RI EV ER TR IE B R U N D F U N K U N D F E R N S E H E N ra d io -television SEITE AUSGABE: APRIL 1-8 Der Autoempfänger "SPIDER" ist ein Import-Erzeugnis aus der CSSR. Er zeichnet sich durch besonders kleine Abmessungen
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III/18/379
VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN
service-mitteilungen
unitra
industrievertrieb
Servicemitteilungen
ddr veb
Scans-048
"service-mitteilungen"
Leipzig
S2562
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500 watt power circuit diagram uc3825
Abstract: AXP 202 AXP 192 1N4465 unitrode Applications Note U-107 u107 SEM500 USD1140 tesla diode ZENER 500 watt power circuit diagram uc3825 U-110 CURRENT MODE CONTROLLED WATT POWER SUPPLY
Text: U-110 _ U N IT R O D E APPLICATION NOTE 1.5 MHZ CURRENT MODE IC CONTROLLED 50 WATT POWER SUPPLY Abstract Introduction This application note highlights the development of a 1.5 megahertz current mode IC controlled, 50 watt power supply. Push-pull topology is
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U-110
switchinU-110
500 watt power circuit diagram uc3825
AXP 202
AXP 192
1N4465
unitrode Applications Note U-107
u107
SEM500
USD1140
tesla diode ZENER
500 watt power circuit diagram uc3825 U-110 CURRENT MODE CONTROLLED WATT POWER SUPPLY
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