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    TELEFUNKEN MOSFET Search Results

    TELEFUNKEN MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    TELEFUNKEN MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UHF preamplifier for BF998

    Abstract: ANT004 temic Tv tuner Diagram bf998 mosmic voltage controlled tv tuner TRANSISTOR mosfet BF998 U2321B S594T passive vhf mixer
    Text: TELEFUNKEN Semiconductors ANT017 Semiconductors for TV Tuners – The New EasyLink Concept Issue: 12. 95 ANT017 TELEFUNKEN Semiconductors Table of Contents Introduction .1


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    PDF ANT017 UHF preamplifier for BF998 ANT004 temic Tv tuner Diagram bf998 mosmic voltage controlled tv tuner TRANSISTOR mosfet BF998 U2321B S594T passive vhf mixer

    circuit diagram electronic choke for tube light

    Abstract: osram transistor Electronic ballast ELECTRONIC BALLAST transistor DIAGRAM 40 w electronic tube light choke Electronic ballast circuit diagram 230 v 20 w ELECTRONIC BALLAST 8W fluorescent lamp transistor Electronic ballast electronic 40 w tube light choke ANT016 rk2 zener
    Text: TELEFUNKEN Semiconductors ANT016 Bipolar Power Transistors in Electronic Ballasts Selection Criteria and System Requirements Issue: 11. 95 ANT016 TELEFUNKEN Semiconductors Table of Contents Introduction .1


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    PDF ANT016 BUF654 BYT51K BYT52K circuit diagram electronic choke for tube light osram transistor Electronic ballast ELECTRONIC BALLAST transistor DIAGRAM 40 w electronic tube light choke Electronic ballast circuit diagram 230 v 20 w ELECTRONIC BALLAST 8W fluorescent lamp transistor Electronic ballast electronic 40 w tube light choke ANT016 rk2 zener

    S918T

    Abstract: S918TR
    Text: S918T/S918TR TELEFUNKEN Semiconductors MOSMIC MOS Monolithic Integrated Circuit MOSFET–IC For TV-Tuner Prestage With 12 V Supply Voltage MOSMIC – MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications


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    PDF S918T/S918TR S918T D-74025 S918TR

    PUSH PULL igbt

    Abstract: "reverse phase control" igbt dimmer zero crossing dimmer igbt reverse phase control igbt dimmer 1n4007 rg U2102B "reverse phase control" reverse phase control TRIAC dimmer ldr 1N4007
    Text: U2102B TELEFUNKEN Semiconductors Multifunction Timer Description The monolithic integrated bipolar circuit U2102B is an MOSFET or IGBT control circuit which allows realization of an extremely wide range of timer and dimmer functions. The integrated current monitoring


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    PDF U2102B U2102B D-74025 PUSH PULL igbt "reverse phase control" igbt dimmer zero crossing dimmer igbt reverse phase control igbt dimmer 1n4007 rg "reverse phase control" reverse phase control TRIAC dimmer ldr 1N4007

    U2350B

    Abstract: VT100 VT-100
    Text: TELEFUNKEN Semiconductors U2350B/U2350B-FP PWM Speed Control for Permanent Excited DC Motors Description The monolithic integrated bipolar circuit U2350B is a MOSFET or IGBT-control Insulated-Gate-BipolarTransistor circuit working on the principle of pulse width


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    PDF U2350B/U2350B-FP U2350B D-74025 VT100 VT-100

    r727

    Abstract: U2352B 10KW
    Text: U2352B TELEFUNKEN Semiconductors PWM Power Control for DC Loads Description The U2352B bipolar circuit is a PWM device for controlling logic level Power MOSFETs and IGBTs. It allows simple of power control for dc loads. Integrated load current monitoring with adjustable switch-off threshold


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    PDF U2352B U2352B D-74025 r727 10KW

    bc815

    Abstract: "Infrared TRANSCEIVER" DATASHEET bc815 transistor capacitor Vishay VJ 1206 EIA232 MAX232 SO16L TFDS4000 TFDS4500 TFDS4500 IC
    Text: TOIM3232 Vishay Telefunken Integrated Interface Circuits ULC Technology: High-performance gate array package using dual metal layer CMOS technology, featuring sub-micron channel length 0.8 mm Description The TOIM3232 IC provides proper pulse shaping for


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    PDF OIM3232 OIM3232 4000-series 4000-series RS232 D-74025 01-Apr-99 bc815 "Infrared TRANSCEIVER" DATASHEET bc815 transistor capacitor Vishay VJ 1206 EIA232 MAX232 SO16L TFDS4000 TFDS4500 TFDS4500 IC

    airbag crash sensor temic

    Abstract: U644B airbag temic wiper motor operation with 12v relay wiper motor 12v dc U2640B temic ecu airbag crash sensor squib* airbag U2044B
    Text: Automotive Control ICs Data Book 1998 General Technical Information TELEFUNKEN Semiconductors 12.97 1 Flasher ICs Electronic flashers with lamp-outage detection are basic equipments in modern vehicles. TEMIC‘s voluminous flasher program can meet most of


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    diagram for test ic 8873

    Abstract: T100 U6083B transistor 81 110 w a4
    Text: U6083B TELEFUNKEN Semiconductors PWM Power Control with Interference Suppression Description U6083B is a PWM IC in bipolar technology for the control of an N-channel power MOSFET used as a high side switch. The IC is ideal for the use in the brightness control dimming of lamps e.g., in dashboard


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    PDF U6083B U6083B D-74025 diagram for test ic 8873 T100 transistor 81 110 w a4

    bc815

    Abstract: bc815 transistor MAX232 for level converter ic 293D EIA232 MAX232 SO16L TFDS4000 TFDS4500 capacitor Vishay VJ 1206
    Text: TOIM3232 Not for new designs Vishay Telefunken Integrated Interface Circuits ULC Technology: High-performance gate array package using dual metal layer CMOS technology, featuring sub-micron channel length 0.8 mm Description The TOIM3232 is using a crystal clock 3.6864 MHz for


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    PDF OIM3232 OIM3232 RS232 D-74025 02-Apr-01 bc815 bc815 transistor MAX232 for level converter ic 293D EIA232 MAX232 SO16L TFDS4000 TFDS4500 capacitor Vishay VJ 1206

    BC815-25

    Abstract: bc815 CRCW 1n4145 Temic ulc ic 293D
    Text: TOIM3232 Not for new designs Vishay Telefunken Integrated Interface Circuits ULC Technology: High-performance gate array package using dual metal layer CMOS technology, featuring sub-micron channel length 0.8 mm Description The TOIM3232 is using a crystal clock 3.6864 MHz for


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    PDF OIM3232 OIM3232 4000-series 4000-series RS232 08-Apr-05 BC815-25 bc815 CRCW 1n4145 Temic ulc ic 293D

    180 volt DC motor speed control pwm

    Abstract: 11105 IC U2350B ic 440 PIN DIAGRAM ic 11105 h
    Text: Tem ic U2350B/U2350B-FP TELEFUNKEN Semiconductors PWM Speed Control for Permanent Excited DC Motors Description The monolithic integrated bipolar circuit U2350B is a MOSFET or IGBT-control Insulated-Gate-BipolarTransistor circuit working on the principle of pulse width


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    PDF U2350B/U2350B-FP U2350B 160kO DIP16 180 volt DC motor speed control pwm 11105 IC ic 440 PIN DIAGRAM ic 11105 h

    uart with bit parity

    Abstract: No abstract text available
    Text: VISH A Y ▼ TOIM3232 _ Vishay Telefunken Integrated Interface Circuits ïiyWÂîr: ULC Technology: High-performance gate array package using dual metal layer CMOS technology, featuring sub-micron channel length 0.8 |xm Description


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    PDF OIM3232 OIM3232 4000-series 4000-series RS232 D-74025 -Apr-99 uart with bit parity

    BF173

    Abstract: BF173 Transistor BF 145 transistor 569-GS transistor bc 7-40
    Text: TELEFUNKEN ELECTRONIC filC D WÊ fiRSDGTb OOGSlbM BF173 '¡TitLitFOJJKliKGlM electronic Creative Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: Video IF amplifier stages In common emitter configuration, especially In video IF power stages


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    PDF BF173 569-GS BF173 BF173 Transistor BF 145 transistor transistor bc 7-40

    bc815

    Abstract: tfds*4000 4000SERIES csac368mg 1N4148 1206 EIA232 MAX232 TD232 TFDS4000 9600 baud rate converter
    Text: TOIM3232 ¥18HAY _ ▼ Vishay Telefunken Integrated Interface Circuits ULC Technology: High-performance gate array package using dual metal layer CMOS technology, featuring sub-micron channel length 0.8 ^m Description The TOIM3232 1C provides proper pulse shaping for


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    PDF OIM3232 OIM3232 4000-series 4000-series RS232 D-74025 -Apr-99 bc815 tfds*4000 4000SERIES csac368mg 1N4148 1206 EIA232 MAX232 TD232 TFDS4000 9600 baud rate converter

    Transistor BC 227

    Abstract: transistor bf 910 CF-910 BC238C transistor marking v12 ghz transistor BF 235
    Text: TELEFUNKEN ELECTRONIC âlC D • ô'téGO'ifei 000531a *5 7 W Ê M G G CF 910 Marked with: CF1 TFitLitFdflKlKdM] electronic Creative Technologies - T = - 3 / - 2 , s r N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications:


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    PDF 000531a 569-GS Transistor BC 227 transistor bf 910 CF-910 BC238C transistor marking v12 ghz transistor BF 235

    bc815

    Abstract: BC815-25 9600 baud rate converter
    Text: TOIM3232 Vishay Telefunken Integrated Interface Circuits MEMBER IrDA FSn ULC Technology: High-performance gate array package using dual metal layer CMOS technology, featuring sub-micron channel length 0.8 (xm Description The TOIM3232 1C provides proper pulse shaping for


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    PDF OIM3232 OIM3232 4000-series 4000-series RS232 TN0201T -Apr-99 bc815 BC815-25 9600 baud rate converter

    transistor k 3562

    Abstract: transistor Bf 966 mosfet bf 966 BF966 LM 3558 G28 marking code sot 23 B1412-1 transistor G28 G28 SOT-23 SOT-23 marking BF
    Text: TELEFUNKEN ELECTRONIC ¥ilLilFO*lKl electronic 61C D • S^Dmb '7s 3 / -2 - S T ' 00052b2 0 BIAL66 BF 966 Creative Technologies { i N-Channel Dual Gate MOS-Fieldeffect Tetrode • Depletion Mode Applications; Input- and Mixerstages especially for UHF-tuners


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    PDF 00052b2 IAL66 ft-11 569-GS 000S154 HAL66 if-11 transistor k 3562 transistor Bf 966 mosfet bf 966 BF966 LM 3558 G28 marking code sot 23 B1412-1 transistor G28 G28 SOT-23 SOT-23 marking BF

    CF-121

    Abstract: ALG TRANSISTOR ALG Transistor MARKING 50B4DIN41867
    Text: TELEFUNKEN ELECTRONIC fltUKFOilKlKtlKl electronic Û1C D • ê'iSOO'Jb DODSBH'J 1 7~ S / ~ 2 ^ ~ C F 121 Creative Technologies N-Channel-GaAs-M ESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz In common source configuration;


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    PDF 50B4DIN41867 569-GS CF-121 ALG TRANSISTOR ALG Transistor MARKING

    transistor g23 mosfet

    Abstract: 3680 MOSFET transistor g23 CF-922 1SS140 marking code wa sot 143 CF922
    Text: TELEFUNKEN ELECTRONIC fllC D ITilLitFQIKlKiMelectronic â^SQQ^b 000530b CF 922 Marked with: CF 4 Creative Technologies N-Channel-GaAs-MESFET-Tetrods Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz in common Gate 1 configuration;


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    PDF 000530b 569-GS transistor g23 mosfet 3680 MOSFET transistor g23 CF-922 1SS140 marking code wa sot 143 CF922

    transistor bf 254

    Abstract: bf255 bf254 BF255C transistor BF 255 transistor NPN BF255 transistor marking ra
    Text: Ö1C D TELEFUNKEN ELECTRONIC • fl^OOSb 0005163 M T * -J /-* / BF 254 • BF 255 ‘¡TilLilFyMDSliMl electronic Creative Technologies Silicon NPN Epitaxial Planar Transistors Applications: BF 254: General and controlled RF amplifier stages up to 100 MHz


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    PDF 569-GS transistor bf 254 bf255 bf254 BF255C transistor BF 255 transistor NPN BF255 transistor marking ra

    Transistor BFT 96

    Abstract: bft96 transistor 3884 transistor BC 176 Telefunken u 237 transistor fet 3884
    Text: TELEFUNKEN ELECTRONIC Ô1C P • fi^SQD^b Q00532Q T r-*/~ BFT 96 iniDJllFWIKEM electronic Creative Technologies Silicon PNP Planar BF Transistor Applications: RF amplifier up to GHz range specially for wide band antenna amplifier Features: • High power gain


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    PDF q0q532q 0484E1 ft-11 569-GS 000s154 hal66 if-11 Transistor BFT 96 bft96 transistor 3884 transistor BC 176 Telefunken u 237 transistor fet 3884

    transistor bc 930

    Abstract: transistor bc 248 transistor BC 247 cf930 BC 247 sot-23 D200-PA E33681 HAT2195WP BC 247 b transistor SOT-23 marking BF
    Text: TELEFUNKEN ELECTRONIC filC D • CF 930 Marked with: CF 5 YHILilPQJMIKiM electronic Creative Technologies N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: QDDSBfifiO r- 3 / -zr Gain controlled amplifiers and mixers up to 2 GHz In common source configuration;


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    PDF ft-11 569-GS 000s154 hal66 if-11 transistor bc 930 transistor bc 248 transistor BC 247 cf930 BC 247 sot-23 D200-PA E33681 HAT2195WP BC 247 b transistor SOT-23 marking BF

    BF681

    Abstract: telefun* transistor pnp bf 681 marking code transistor fb transistor 6B transistor bc 470 telefunken C80 v 681 Telefunken power electronic transistor TRANSISTOR BC 950 sot-23 Marking DL
    Text: TELEFUNKEN ELECTRONIC IMI electronic flic D • fl'iSDO'îb 000525Ô 0 BF 681 ~r - CreativeTechnologies Silicon PNP BF Transistor Applications: UHF/VHF oscillator and mixer stages Features: • High power gain • High reverse attenuation • Low noise figure


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    PDF T15/S54. ft-11 569-GS 000s154 hal66 if-11 BF681 telefun* transistor pnp bf 681 marking code transistor fb transistor 6B transistor bc 470 telefunken C80 v 681 Telefunken power electronic transistor TRANSISTOR BC 950 sot-23 Marking DL