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    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1213-8 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 39.5 dBm at 12.7 GHz to 13.2 GHz • High gain - ldB = 5.0 dB at 12.7 GHz to 13.2 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan     		PDF TIM1213-8 2-11C1A) MW50250196 TCH725G G2231S TDT7250 TIM1213-8L

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TO SH IBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M O SII -5 2 S K 1 357 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER A N D M OTOR DRIVE APPLICATIONS. • • • • 2SK1357 ^0^7550 00232flb 275 INDUSTRIAL APPLICATIONS


    OCR Scan     		PDF 2SK1357 00232flb 20kfi) 0023b43 O-220SM Q023b44

    Untitled

    Abstract: No abstract text available
    Text: I U M SEMICONDUCTOR TOSHIBA HUM i i U ii 2SC4318 TECHNICAL DATA SILICON NPN EPITAXIAL PLANAR TYPE 25C431» VHF-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. Unit in nun I jSMAJC. 4*6 M A X , • Low Noise Figure, High Gain. . N F = l.ld B , |S2Je|2= H d B (f= lG H z )


    OCR Scan     		PDF 2SC4318 25C431Â -J260 TDT72SG 20tnA 2SC4318