ptb 99 atex 3128 x
Abstract: ptb 99 atex 3101 atex 3128 M20-M63 ghg 748 99-ATEX M12-M16 PTB 99 ATEX ptb 99 atex 3128 Nut M63
Text: 78-79.qxp 8/11/2010 10:41 AM Page 79 Ex-i International Standards Flameproof and Increased Safety IP66 Sizes M12-M16: PTB 99 ATEX 3101 X Sizes M20-M63: PTB 99 ATEX 3128 X IECEx 4F 4F Gland Type: Non-armoured Cable Type: Non-armoured Certifications and Compliances:
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M12-M16:
M20-M63:
0004X
temperatu60
ptb 99 atex 3128 x
ptb 99 atex 3101
atex 3128
M20-M63
ghg 748
99-ATEX
M12-M16
PTB 99 ATEX
ptb 99 atex 3128
Nut M63
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Untitled
Abstract: No abstract text available
Text: 2N4150S Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power, High voltage • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N4150SJ
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2N4150S
MIL-PRF-19500
2N4150SJ)
2N4150SJX)
2N4150SJV)
MIL-STD-750
MIL-PRF-19500/394
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Untitled
Abstract: No abstract text available
Text: 2N4150S Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Low power, High voltage • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N4150SJ • JANTX level (2N4150SJX)
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2N4150S
MIL-PRF-19500
2N4150SJ)
2N4150SJX)
2N4150SJV)
MIL-STD-750
MIL-PRF-19500/394
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2N4150
Abstract: 2N4150J 2N4150JV 2N4150JX
Text: 2N4150 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power, High voltage • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N4150J • JANTX level (2N4150JX)
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2N4150
MIL-PRF-19500
2N4150J)
2N4150JX)
2N4150JV)
MIL-STD-750
MIL-PRF-19500/394
2N4150
2N4150J
2N4150JV
2N4150JX
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Untitled
Abstract: No abstract text available
Text: 2N4150 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power, High voltage • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N4150J • JANTX level (2N4150JX)
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2N4150
MIL-PRF-19500
2N4150J)
2N4150JX)
2N4150JV)
MIL-STD-750
MIL-PRF-19500/394
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Untitled
Abstract: No abstract text available
Text: 2N4150 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Low power, High voltage • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N4150J • JANTX level (2N4150JX)
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2N4150
MIL-PRF-19500
2N4150J)
2N4150JX)
2N4150JV)
MIL-STD-750
MIL-PRF-19500/394
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2N4150S
Abstract: 2N4150SJ 2N4150SJV 2N4150SJX
Text: 2N4150S Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power, High voltage • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N4150SJ
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2N4150S
MIL-PRF-19500
2N4150SJ)
2N4150SJX)
2N4150SJV)
MIL-STD-750
MIL-PRF-19500/394
2N4150S
2N4150SJ
2N4150SJV
2N4150SJX
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G20N120E2
Abstract: AN7254 AN7260 HGTG20N120E2 LD26
Text: HGTG20N120E2 Semiconductor 34A, 1200V N-Channel IGBT April 1995 Features Package JEDEC STYLE TO-247 • 34A, 1200V • Latch Free Operation EMITTER • Typical Fall Time - 780ns COLLECTOR GATE • High Input Impedance COLLECTOR BOTTOM SIDE METAL • Low Conduction Loss
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HGTG20N120E2
O-247
780ns
HGTG20N120E2
150oC.
G20N120E2
AN7254
AN7260
LD26
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MAGNUM METAL LOCATOR
Abstract: 09 67 000 9973 HARTING UpRight SP 37 HC 741 DIN 60352-2 19 PIN CIRCULAR push pull CONNECTORS d-sub harting DIN EN 60352-2 contact resistance circular connector M12-RJ
Text: HARTING Electric News 2004 People | Power | Partnership Subsidiary companies – worldwide Austria HARTING Ges. m. b. H. Deutschstraße 3, A-1230 Wien Phone +43 1 / 6 16 21 21 Fax +43 1 / 6 16 21 21-21 E-Mail: [email protected] Belgium HARTING N.V. / S.A. Doornveld 8, B-1731 Zellik
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B-1731
MAGNUM METAL LOCATOR
09 67 000 9973 HARTING
UpRight SP 37
HC 741
DIN 60352-2
19 PIN CIRCULAR push pull CONNECTORS
d-sub harting
DIN EN 60352-2 contact resistance
circular connector
M12-RJ
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Untitled
Abstract: No abstract text available
Text: MA3005S10000000 P-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3005S is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter
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MA3005S10000000
MA3005S
D061009
3000pcs
6000pcs
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intel 3101
Abstract: LA 3101 A 3101 8 pin intel i5 3101A High Speed RAM intel+3101
Text: in tei Fast Access Time — 35 nsec max over 0-75°C Temperature Range 3101 A <•! ' t - ' OR-Tie Capability — (Open Collector, Outputs Fully Decoded — on Chip Address Decode and Buffer Simple Memory Expansion through Chip Select Input — 17 nsec max over
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Untitled
Abstract: No abstract text available
Text: T M S 3101 LC, N C - D U A L 100-BIT S T A T I C S H IF T RE G I S T ER T M S 3102 LC. N C - D U A L 80-BIT STA TI C S H I F T R E G I S T E R T M S 3103 LC, N C - D U A L 64-BIT S T A T I C S H IF T R E G I S T E R features • £ DC to 2.5-M H z operation
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100-BIT
80-BIT
64-BIT
200-BIT
S3101
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shift register ttl
Abstract: A 3101 8 pin td 3101 n D021 PW02 SN74I
Text: T M S 3101 LC, N C -DUAL 100-BIT STATIC SHIFT REGISTER T M S 3102 LC, N C -DUAL 80-BIT STATIC SHIFT REGISTER T M S 3103 LC, N C -DUAL 64-BIT STATIC SHIFT REGISTER features • > z DC to 2.5-M H z operation • Low power dissipation § 3 „•< • D irect interface w ith D T L /T T L
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100-BIT
80-BIT
64-BIT
200-bit
sn7400
SN74I
shift register ttl
A 3101 8 pin
td 3101 n
D021
PW02
SN74I
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION CONTROL DRAWING 1. MATING INTERFACE DIMENSIONS FOR PLUG PER MIL-STD-34B Fig. 310-1 AND DYNAWAVE MD-9B. 2. ELECTRICAL DC TO 26.5 GHz. 1.05 + .005 x FGHz. .03 dB x 7 FGHz. 50 335 FREQUENCY RANGE GHz VSWR (M A X ) * -INSERTION LOSS (d B M AX) * NOMINAL IMPEDANCE (O H M S )VOLTAGE RATING (MAX VRMS)-RF LEAKAGE (MIN. dB D OW N)-TEMPERATURE RATING (DEGREES CENTIGRADE)-DIELECTRIC WITHSTANDING VOLTAGE (MAX VRMS)
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MIL-STD-34B
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LA 3101 ic
Abstract: TCM3101 LA 3101
Text: TCM 3101 FSK MODEM D 2 8 6 6 , AU G U ST 1 9 8 5 — REVISED FEBRUARY 1 9 8 6 j NO T REC OM M ENDED FOR NEW DESIGN DUAL-IN-LINE PACKAGE TOP VIEWI For n e w design, refer to T C M 3 1 0 5 vdd C CLK £ 2 CDT [ I 3 RXA £ 4 description TRSC 5 The T C M 3 1 0 1 is a single-chip asynchronous
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TCM3101
LM124
LA 3101 ic
LA 3101
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Untitled
Abstract: No abstract text available
Text: GENERAL SEMICONDUCTOR TÉ dF 72C 01935 3918590 GENERAL S EM IC O ND UC TOR General 2p" Sem iconductor Industries, Ine . | BTiaSÍO O D O n 3 5 S J ~ O r - 33 -^ s q U H R E T Ì COMPANY T y p ic a l D evice Types: 2 N 6 92 2, 2N 6923 25-60 AMP Ultra Fast
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20nsec
150nsec
800nsec
TWX910-950-1942
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2SK1815
Abstract: DDD310G A2245
Text: 2SK1815 S IP M O S F U J I P O W E R M O S -F E T N-CHAIMIMEL SILICON POWER MOS-FET _ - TTT ^ r r-111 o tr i I to • Features Outline Drawings • High current • Low no-resistance • N o secondary breakdow n • Low driving p o w e r
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2SK1815
--r-111
A2-245
DDD310G
A2245
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Untitled
Abstract: No abstract text available
Text: Tem ic SÌ9925DY Se m ic o n d u c to r s Dual N-Channel Enhancement-Mode MOSFET Product Summary V d s V 20 rDS(on) (Q ) I d (A) 0.05 @ Vqs = 4.5 V ±5.0 0.06 @ VGs = 3.0 V ±4.2 0.08 @ Vos = 2.5 V ±3.6 u D2 D2 1 U SO-8 Si [ T ~8~1 D, Gì T 1 G l D, Ï1 0 —
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9925DY
18-Dec-96
S-513I1--
I8-Dec-96
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IMBT3904
Abstract: ITT INTERMETALL
Text: ITT SEIIICON] / INTERHETALL SGE J> • 4bfi2711 0002564 741 M I S I IMBT3903, IMBT3904 'T '’?A' ' 5 NPN Silicon Epitaxial Planar Transistors « for switching and amplifier applications. TE A s complementary types the PN P transistors IMBT3905 and IMBT3906 are recommended.
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4bfi2711
IMBT3903,
IMBT3904
IMBT3905
IMBT3906
IMBT3903
IMBT3904
O-236)
15000Hz
ITT INTERMETALL
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td 3101 n
Abstract: No abstract text available
Text: r& T O K O TK11900 ADJUSTABLE LOW DROPOUT REGULATOR FEATURES APPLICATIONS • Low Supply Current ■ Portable Instrumentation ■ Low Power Shutdown Mode ■ Cordless Telephones ■ Low Noise Output ■ Pagers ■ Low Drop Out Voltage ■ Toys ■ Extremely Small Package
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TK11900
TK11900
TK11900M
TK11900M
1K11900MTPC20
1K11900UTPC21
td 3101 n
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Untitled
Abstract: No abstract text available
Text: Square ended SMD 500 mWatt Voidless zeners 1N6321US thru 1N6355US Hard GlassTungsten MELF "D" Package nJ - Applications Low noise zener diodes with hard glass tungsten, non-rolling SMD design. Able to replace less robust families like1N4099and 1N5530B. Forusein hostile environments and
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1N6321US
1N6355US
like1N4099and
1N5530B.
MIL-S-19500/533.
G0GG743
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IRF250
Abstract: IRF252
Text: HE 0 I 4ÖSS45S G G C m i a Data Sheet No. PD-9.321H ö I INTERNATIONAL R E C T I F I E R I«R INTERNATIONAL RECTIFIER T-39-13 REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRF250 IRF251 IRF252 IRF253 N-CHANNEL Product Summary 200 Volt, 0.085 Ohm HEXFET
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SS45S
T-39-13
IRF250
IRF251
IRF252
IRF253
O-204AE
IRF250,
IRF251,
IRF252,
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DIODE MOTOROLA B33
Abstract: TMOS Power FET mtd2n50-1 369A-10 AN569 MTD2N50 N250 td 3101 n
Text: M O T O R O L A SC X S T R S / R F bflE D b3b?5S4 D O W N TTfl • MOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA MTD2N50 Designer's Data Sheet Pow er Field Effect Transistor N-Channel Enhancement-Mode Silico n Gate D PA K for Surface Mount or Insertion Mount
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MTD2N50
DIODE MOTOROLA B33
TMOS Power FET
mtd2n50-1
369A-10
AN569
MTD2N50
N250
td 3101 n
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Untitled
Abstract: No abstract text available
Text: CY7C271 CY7C274 CYPRESS SEMICONDUCTOR 32,768 x 8 PROM Power Switched and Reprogrammable Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 45 ns commercial — 55 ns (military) • Low power — 660 mW (commercial)
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CY7C271
CY7C274
7C271)
CY7C271-45WC
CY7C274-45PC
CY7C274-45WC
CY7C271-55PC
CY7C271-55WC
CY7C274-55PC
CY7C274-55WC
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