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TE Connectivity HTCM-SCE-1-4-4H-9 WIRE MARKER CBL TIE 10.4X51.4MM
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DigiKey	HTCM-SCE-1-4-4H-9	Bulk	705		1	1 $4.94 10 $4.026 100 $3.2819 1000 $2.71162 10000 $2.71162	Buy Now
TE Connectivity HTCM-SCE-TP-1-4-4H-9 WIRE MARKER CBL TIE 10.4X51.4MM
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DigiKey	HTCM-SCE-TP-1-4-4H-9	Bulk	513		1	1 $4.21 10 $3.433 100 $2.7986 1000 $2.28201 10000 $2.278	Buy Now
Swissbit SFCF0128H1BK1MT-C-MS-553-SMA MEM CARD COMPACTFLASH 128MB SLC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SFCF0128H1BK1MT-C-MS-553-SMA	Tray	29		1	1 $37.45 10 $33.233 100 $29.82425 1000 $28.22504 10000 $28.22504	Buy Now
Mouser Electronics	SFCF0128H1BK1MT-C-MS-553-SMA					1 $37.45 10 $33.23 100 $28.2 1000 $28.13 10000 $28.13	Get Quote
Newark	SFCF0128H1BK1MT-C-MS-553-SMA	Bulk			1	1 $43.11 10 $43.11 100 $35.49 1000 $34.29 10000 $34.29	Buy Now
TE Connectivity HTCM-SCE-TP-1-2-6H-9 WIRE MARKER CBL TIE 20.3X51.4MM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HTCM-SCE-TP-1-2-6H-9	Bag	28		1	1 $5.91 10 $4.816 100 $5.91 1000 $5.91 10000 $5.91	Buy Now
Swissbit SFCF0256H1BK1MT-C-MS-553-SMA MEM CARD COMPACTFLASH 256MB SLC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SFCF0256H1BK1MT-C-MS-553-SMA	Tray	1		1	1 $40.07 10 $35.556 100 $31.909 1000 $30.19765 10000 $30.19765	Buy Now
Mouser Electronics	SFCF0256H1BK1MT-C-MS-553-SMA					1 $40.07 10 $35.55 100 $30.19 1000 $30.19 10000 $30.19	Get Quote
Newark	SFCF0256H1BK1MT-C-MS-553-SMA	Bulk			1	1 $46.34 10 $46.34 100 $38.15 1000 $36.85 10000 $36.85	Buy Now
Neutron USA	SFCF0256H1BK1MT-C-MS-553-SMA		11			1 $69.99 10 $69.99 100 $69.99 1000 $69.99 10000 $69.99	Buy Now

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TCMS Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
TCMS Series		Fujitsu	Capacitor		Original	PDF

TCMS Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
TA-016TCMS680M-ER Abstract: TA-010TCMS330M-B2R TA-025TCMS100M-C1R ta-6r3tcm220 TA-6R3TCMS330M-AR ta-010tcms220m-c1r EIA-535-BAAC TA010TCM1R5M 6R3TCMS470M TA-020TCMS3R3M-B2R Text: TANTALUM CAPACITOR TCM Family TCM Series: Standard Capacitance TCMS Series: Extended Capacitance Application: Mobile Telecom Applications, Camcorder, Digital Still Camera, LCD TV, HICs and all kind of devices that require miniaturization and surface mouting.	Original	PDF	EIA-535BAAC, QC300801/US001 Co35TCMS3R3M-B2R TA-035TCMS4R7M-C1R TA-035TCMS6R8M-C1R 120Hz( 100kHz( TA-016TCMS680M-ER TA-010TCMS330M-B2R TA-025TCMS100M-C1R ta-6r3tcm220 TA-6R3TCMS330M-AR ta-010tcms220m-c1r EIA-535-BAAC TA010TCM1R5M 6R3TCMS470M TA-020TCMS3R3M-B2R
ta-6r3tcm220 Abstract: ta016tcms470 EIA-535-BAAC TA-020TCMS2R2 TA-010TCMS150 JIS-C-5143 TA-025TCM3R3 ERL 35 TA-010TCMS100 TA-016TCMS2R2 Text: TANTALUM CAPACITOR TCM Family TCM Series: Standard Capacitance TCMS Series: Extended Capacitance TCML Series: Low Profile Application: Mobile Telecom Applications, Camcorder, Digital Still Camera, LCD TV, HICs and all kind of devices that require miniaturization	Original	PDF	EIA-535BAAC, QC300801/US001 TA-016TCMLR33( TA-016TCMLR47( TA-016TCMLR68( TA-016TCML1R0( TA-016TCML1R5( ta-6r3tcm220 ta016tcms470 EIA-535-BAAC TA-020TCMS2R2 TA-010TCMS150 JIS-C-5143 TA-025TCM3R3 ERL 35 TA-010TCMS100 TA-016TCMS2R2
v684 Abstract: TA-025TCMS2R2M-AR TA-6R3TCMS470M TA-016TCMS4R7M-AR a475 TA-010TCMS4R7M-AR TA-016TCMS680M-ER diode v684 MARKING B2R TA-020TCMS3R3M-B2R Text: FUJITSU MEDIA DEVICES DATA SHEET DS01-41104-1E TANTALUM CAPACITORS TANTALUM CAPACITORS TCMS Series • DESCRIPTION Miniaturization of electronic devices communication devices, audio devices, and AV devices, etc. has more and more accelerated in recent years. The models downsized into one half to one fifth of conventional TCM series	Original	PDF	DS01-41104-1E F0106 v684 TA-025TCMS2R2M-AR TA-6R3TCMS470M TA-016TCMS4R7M-AR a475 TA-010TCMS4R7M-AR TA-016TCMS680M-ER diode v684 MARKING B2R TA-020TCMS3R3M-B2R
v684 Abstract: TA016TCMS ta016tcms470 TA025TCMS TA-6R3TCMS6R8M TA-010TCMS100M Text: FUJITSU MEDIA DEVICES DATA SHEET DS01-41104-1E TANTALUM CAPACITORS TANTALUM CAPACITORS TCMS Series • DESCRIPTION Miniaturization of electronic devices communication devices, audio devices, and AV devices, etc. has more and more accelerated in recent years. The models downsized into one half to one fifth of conventional TCM series	Original	PDF	DS01-41104-1E D-63303 F0106 v684 TA016TCMS ta016tcms470 TA025TCMS TA-6R3TCMS6R8M TA-010TCMS100M
TA-010TCMS100 Abstract: TA-010TCMS220 JIS-C-5143 TA025TCMS EIA-535BAAC TA-035TCM TA-016TCM220 Text: TANTALUM CAPACITOR TCM Family TCM Series: Standard Capacitance TCMS Series: Extended Capacitance TCML Series: Low Profile Application: Mobile Telecom Applications, Camcorder, Digital Still Camera, LCD TV, HICs and all kind of devices that require miniaturization	Original	PDF
TH4B Abstract: No abstract text available Text: PHAST-3N STM-1/STS-3/STS-3c SDH/SONET Overhead Terminator with Telecom Bus Interface TXC-06103 DATA SHEET • • • • • • • • • • • • • • • • • Bit-serial SDH/SONET line interface - Pseudo-ECL interface with clock recovery and synthesis	Original	PDF	TXC-06103 64-byte TXC-06103-MB TH4B
45VM32160D Abstract: No abstract text available Text: IS42/45VM32160D 4M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45VM32160D are mobile 536,870,912 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are	Original	PDF	IS42/45VM32160D 32Bits IS42/45VM32160D -40oC 16Mx32 IS42VM32160D-6BLI IS42VM32160D-75BLI 90-ball 45VM32160D
CMS3216LAF Abstract: CMS3216LAG CMS3216LAH Text: CMS3216LAx-75xx 32M 2Mx16 Low Power SDRAM Revision 0.2 January, 2007 Rev0.2, Jan. 2007 CMS3216LAx-75xx Document Title 32M(2Mx16) Low Power SDRAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Mar.3rd, 2005 Preliminary 0.1 Add H(Pb-Free & Halogen Free) descriptions	Original	PDF	CMS3216LAx-75xx 2Mx16) CMS3216LAF CMS3216LAG CMS3216LAH
Untitled Abstract: No abstract text available Text: CMS4A16LAx–75Ex 128M 8Mx16 Low Power SDRAM Revision 0.5 May. 2007 Rev. 0.5, May. ‘07 CMS4A16LAx–75Ex Document Title 128M(8Mx16) Low Power SDRAM Revision History Revision No. History Draft date Remark Preliminary 0.0 Initial Draft Apr.25th, 2005 0.1	Original	PDF	CMS4A16LAx 8Mx16) 160ns 350uA 400uA
W9825G6JH Abstract: A-04 w9825g6jh-6l w9825g6jh-6 Text: W9825G6JH 4 M  4 BANKS  16 BITS SDRAM Table of Contents1. GENERAL DESCRIPTION . 3 2. FEATURES . 3	Original	PDF	W9825G6JH A-04 w9825g6jh-6l w9825g6jh-6
AS4SD32M16 Abstract: No abstract text available Text: SDRAM AS4SD32M16 512Mb: 32 Meg x 16 SDRAM PIN ASSIGNMENT Top View Synchronous DRAM Memory 54-Pin TSOP FEATURES • Full Military temp (-55°C to 125°C) processing available • Configuration: 32 Meg x 16 (8 Meg x 16 x 4 banks) • Fully synchronous; all signals registered on positive	Original	PDF	AS4SD32M16 512Mb: 192-cycle -40oC -55oC 125oC AS4SD32M16
Untitled Abstract: No abstract text available Text: SDRAM AS4SD2M32 512K x 32 x 4 Banks 64-Mb PIN ASSIGNMENT (Top View) Synchronous SDRAM 86-Pin TSOPII FEATURES • Full Military temp (-55°C to 125°C) processing available • Configuration: 512K x 32 x 4 banks • Fully synchronous; all signals registered on positive	Original	PDF	AS4SD2M32 64-Mb) 133MHz TSOPII-86LD -40oC -55oC 125oC AS4SD2M32
Untitled Abstract: No abstract text available Text: SDRAM AS4SD8M16 128 Mb: 8 Meg x 16 SDRAM PIN ASSIGNMENT Top View Synchronous DRAM Memory 54-Pin TSOP FEATURES • • • • • • • • • • • • • • Full Military temp (-55°C to 125°C) processing available Copper lead frame option for enhanced reliability	Original	PDF	AS4SD8M16 096-cycle -40oC -55oC 125oC AS4SD8M16
cdb 4121 e Abstract: cdb 4121 ARMv7 Cortex-m1 verilog code AHB cortex Text: Cortex-M1 v3.1 Handbook 2010 Actel Corporation. All rights reserved. Printed in the United States of America Part Number: 50200127-12 Release: September 2010 No part of this document may be copied or reproduced in any form or by any means without prior written consent of	Original	PDF

dynamic ram binary cell Abstract: QBA-1 qab1 Text: VIS Preliminary VG36643241AT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 524,288 words x 32 bits x 4 banks. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only	Original	PDF	VG36643241AT 86-pin 1G5-0172 dynamic ram binary cell QBA-1 qab1
SpecTek Abstract: S16008 IDD8 S80016LK7TW-8A 54-PIN S16008LK9 S40032LK8 S80016LK7 54pin TSOP SDRAM MA3232 Text: 128Mb: x4, x8, x16 SDRAM 3.3V ICC OPERATING CONDITIONS AND MAXIMUM LIMITS: Vdd = 3.3V ± 10%V, Temp. = 25° to 70 °C Supply Current OPERATING CURRENT: ACTIVE mode, burst = 1, READ or WRITE, tRC > tRC MIN , one bank active, CL=3 STANDBY CURRENT: POWER-DOWN mode, CKE = LOW,	Original	PDF	128Mb: SymS80016LK7 S16008LK9 54-pin 60-ball PC100 PC133 S80016LK7TW-8A 09005aef807827f6 SpecTek S16008 IDD8 S80016LK7TW-8A S16008LK9 S40032LK8 S80016LK7 54pin TSOP SDRAM MA3232
IS42S16160D Abstract: IS42S16160D-7TLI Text: IS42S83200D, IS42S16160D IS45S83200D, IS45S16160D 32Meg x 8, 16Meg x16 JUNE 2009 256-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 256Mb Synchronous DRAM achieves high-speed	Original	PDF	IS42S83200D, IS42S16160D IS45S83200D, IS45S16160D 32Meg 16Meg 256-MBIT 256Mb IS42S83200D IS42S16160D IS42S16160D-7TLI
ARMv5TE Abstract: ARM968E-S LPC2923 LQFP100 Text: LPC2921/2923/2925 ARM9 microcontroller with CAN, LIN, and USB Rev. 01 — 15 June 2009 Preliminary data sheet 1. General description The LPC2921/2923/2925 combine an ARM968E-S CPU core with two integrated TCM blocks operating at frequencies of up to 125 MHz, Full-speed USB 2.0 device controller,	Original	PDF	LPC2921/2923/2925 LPC2921/2923/2925 ARM968E-S 10-bit LPC2921 ARMv5TE LPC2923 LQFP100
MT48LC4M32B2P Abstract: MT48LC4M32B2TG-7 MT48LC4M32B2 128MbSDRAMx32 Text: 128Mb: x32 SDRAM Features Synchronous DRAM MT48LC4M32B2 – 1 Meg x 32 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/sdram Features Figure 1: • PC100 functionality • Fully synchronous; all signals registered on positive	Original	PDF	128Mb: MT48LC4M32B2 PC100 096-cycle 09005aef80872800/Source: 09005aef80863355 128MbSDRAMx32 MT48LC4M32B2P MT48LC4M32B2TG-7 MT48LC4M32B2
MT48LC2M32B2P Abstract: MT48LC2M32B2 MT48LC2M32B2P-7 MT48LC2M32B2TG 2M32B2 *48LC2M32 H9612 Text: 64Mb: x32 SDRAM Features Synchronous DRAM MT48LC2M32B2 – 512K x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site Features Table 1: • PC100 functionality • Fully synchronous; all signals registered on positive edge of system clock	Original	PDF	MT48LC2M32B2 PC100 096-cycle 09005aef811ce1fe/Source: 09005aef811ce1d5 64MSDRAMx32 MT48LC2M32B2P MT48LC2M32B2 MT48LC2M32B2P-7 MT48LC2M32B2TG 2M32B2 *48LC2M32 H9612
mt48lc32m16a2p-75 Abstract: MT48LC32M16A2P-75C 1m x16 SDRAM MICRON A11 MARKING CODE MT48LC32M16A2P MT48LC128M4A2 MT48LC32M16A2 MT48LC64M8A2 TN-48-05 MT48LC32M16A2P-75 c Text: 512Mb: x4, x8, x16 SDRAM Features Synchronous DRAM MT48LC128M4A2 – 32 Meg x 4 x 4 banks MT48LC64M8A2 – 16 Meg x 8 x 4 banks MT48LC32M16A2 – 8 Meg x 16 x 4 banks For the latest data sheet, refer to Micron’s Web site Features Options • PC100- and PC133-compliant	Original	PDF	512Mb: MT48LC128M4A2 MT48LC64M8A2 MT48LC32M16A2 PC100- PC133-compliant 192-cycle 09005aef809bf8f3/Source: 09005aef80818a4a 512MbSDRAM mt48lc32m16a2p-75 MT48LC32M16A2P-75C 1m x16 SDRAM MICRON A11 MARKING CODE MT48LC32M16A2P MT48LC128M4A2 MT48LC32M16A2 MT48LC64M8A2 TN-48-05 MT48LC32M16A2P-75 c
r2a3 Abstract: r1a10 M1367 M4589 Text: TOSHIBA THMY728010BEG-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 72-BIT SYNCHRONOUS D RA M MODULE DESCRIPTION The THMY728010BEG is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of nine TC59S6408BFTL DRAMs and PLL/Registers on a printed circuit board.	OCR Scan	PDF	THMY728010BEG-80L THMY728010BEG 608-word 72-bit TC59S6408BFTL 72-bit r2a3 r1a10 M1367 M4589
2269H Abstract: No abstract text available Text: TOSHIBA THMY7216C1EG-80H TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216C1EG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408FT DRAMs and an unbuffer on a printed circuit board.	OCR Scan	PDF	THMY7216C1EG-80H 216-WORD 72-BIT THMY7216C1EG TC59S6408FT 72-bit THMY7216C1EG) 2269H
TCK-1000 Abstract: D038 toshiba M7 Text: TO SH IBA THM Y6480F1 BEG-80 TEN TA TIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388, 6 O8-W O RD B Y 64-BIT SYN CH R O N O U S DRAM M ODULE D ESCRIPTIO N The THMY6480F1BEG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of eight TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.	OCR Scan	PDF	Y6480F1 BEG-80 64-BIT THMY6480F1BEG 608-word TC59S6408BFT 64-bit THMY6480F1 TCK-1000 D038 toshiba M7

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TCMS Price and Stock

TE Connectivity HTCM-SCE-1-4-4H-9

TE Connectivity HTCM-SCE-TP-1-4-4H-9

Swissbit SFCF0128H1BK1MT-C-MS-553-SMA

TE Connectivity HTCM-SCE-TP-1-2-6H-9

Swissbit SFCF0256H1BK1MT-C-MS-553-SMA

TCMS Datasheets (1)

TCMS Datasheets Context Search

TA-016TCMS680M-ER

ta-6r3tcm220

v684

v684

TA-010TCMS100

TH4B

45VM32160D

CMS3216LAF

Untitled

W9825G6JH

AS4SD32M16

Untitled

Untitled

cdb 4121 e

dynamic ram binary cell

SpecTek

IS42S16160D

ARMv5TE

MT48LC4M32B2P

MT48LC2M32B2P

mt48lc32m16a2p-75

r2a3

2269H

TCK-1000