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    TCE 0041 Search Results

    TCE 0041 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    AT25EU0041A-SSHN-T Renesas Electronics Corporation 4 Mbit Ultra-low Energy Serial Flash Memory Visit Renesas Electronics Corporation
    AT25EU0041A-MAHN-T Renesas Electronics Corporation 4 Mbit Ultra-low Energy Serial Flash Memory Visit Renesas Electronics Corporation

    TCE 0041 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Features • 1.65V - 1.95V Read/Write • High Performance • • • • • • • • • • • – Random Access Time – 70 ns – Page Mode Read Time – 20 ns – Synchronous Burst Frequency – 66 MHz – Configurable Burst Operation Sector Erase Architecture


    Original     		PDF

    3314A

    Abstract: SA 20 PLS AT49SN12804 AT49SV12804 PR1-PR16
    Text: Features • 1.65V - 1.95V Read/Write • High Performance • • • • • • • • • • – Random Access Time – 70 ns – Page Mode Read Time – 20 ns – Synchronous Burst Frequency – 66 MHz – Configurable Burst Operation Sector Erase Architecture


    Original     		PDF

    3525a

    Abstract: MRC D17 AT52SQ1283J PA30 PA31
    Text: Module Features • • • • 128-Mbit Burst/Page Flash + 32-Mbit PSRAM Single 88-ball 8 mm x 10 mm x 1.2 mm CBGA Package 1.65V to 1.95V VCC 2.7V to 3.1V VCCQ for Flash + PSRAM 128-Mbit Flash Features • 8M x 16 Organization • High Performance • •


    Original     		PDF 128-Mbit 32-Mbit 88-ball 3525a MRC D17 AT52SQ1283J PA30 PA31

    AT49SN6416

    Abstract: AT49SN6416T Hardlock drive CSA43
    Text: Features • 1.65V - 1.95V Read/Write • High Performance • • • • • • • • • • • – Random Access Time – 70 ns – Page Mode Read Time – 20 ns – Synchronous Burst Frequency – 66 MHz – Configurable Burst Operation Sector Erase Architecture


    Original     		PDF 3464C AT49SN6416 AT49SN6416T Hardlock drive CSA43

    AT49SN6416

    Abstract: AT49SN6416T SA21D 56c2 2F360
    Text: Features • 1.65V - 1.95V Read/Write • High Performance • • • • • • • • • • • – Random Access Time – 70 ns – Page Mode Read Time – 20 ns – Synchronous Burst Frequency – 66 MHz – Configurable Burst Operation Sector Erase Architecture


    Original     		PDF 3464B AT49SN6416 AT49SN6416T SA21D 56c2 2F360

    Untitled

    Abstract: No abstract text available
    Text: Features • 1.65V - 1.95V Read/Write • High Performance • • • • • • • • • • • – Random Access Time – 70 ns – Page Mode Read Time – 20 ns – Synchronous Burst Frequency – 66 MHz – Configurable Burst Operation Sector Erase Architecture


    Original     		PDF 3464C

    W27e256

    Abstract: W29CO20 *27e256 w29c020-70 CA0008 W27E257-12 W27E257-10 Winbond w27e256
    Text: W27EOlO 128K x 8 ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27EOlO is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 131072 x 8 bits that operates on a single 5 volt power supply. The W27EOlO provides an electrical chip erase function.


    Original     		PDF W27EOlO 55/70/90/i 32-pin DI13100 l-408-9436666 l-408-9436668 W27e256 W29CO20 *27e256 w29c020-70 CA0008 W27E257-12 W27E257-10 Winbond w27e256

    PA30

    Abstract: PA31
    Text: Features • 1.65V - 1.95V Read/Write • High Performance • • • • • • • • • • • – Asynchronous Access Time – 85 ns – Page Mode Read Time – 30 ns Sector Erase Architecture – Sixteen 4K Word Sectors with Individual Write Lockout


    Original     		PDF

    AT49BV6416

    Abstract: AT49BV6416C AT49BV6416CT
    Text: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout


    Original     		PDF 64-megabit AT49BV6416 AT49BV6416C AT49BV6416CT

    Untitled

    Abstract: No abstract text available
    Text: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout


    Original     		PDF 64-megabit 3366B

    AT49BV640D

    Abstract: AT49BV6416C AT49BV6416CT
    Text: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout


    Original     		PDF 64-megabit 3465D AT49BV640D AT49BV6416C AT49BV6416CT

    SA93

    Abstract: SA97 AT49BV6416C AT49BV6416CT
    Text: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout


    Original     		PDF 64-megabit 3465B SA93 SA97 AT49BV6416C AT49BV6416CT

    AT49BV640T

    Abstract: 21FFFF
    Text: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout


    Original     		PDF 64-megabit AT49BV640T 21FFFF

    MRC D17

    Abstract: AT52SQ1283J PA31 la 78000 A7A1 SA135
    Text: Module Features • • • • 128-Mbit Burst/Page Flash + 32-Mbit PSRAM Single 88-ball 8 mm x 10 mm x 1.2 mm CBGA Package 1.65V to 1.95V VCC 2.7V to 3.1V VCCQ for Flash + PSRAM 128-Mbit Flash Features • 8M x 16 Organization • High Performance • •


    Original     		PDF 128-Mbit 32-Mbit 88-ball 3525B MRC D17 AT52SQ1283J PA31 la 78000 A7A1 SA135

    MRC D17

    Abstract: AT52SC1283J atmel 532 atmel 614
    Text: Module Features • • • • 128-Mbit Burst/Page Flash + 32-Mbit/64-Mbit PSRAM Single 88-ball 8 mm x 10 mm x 1.2 mm CBGA Package 1.7V to 1.95V VCC 1.8V to 1.95V for VCCQ and PVCC 128-Mbit Flash Features • 8M x 16 Organization • High Performance •


    Original     		PDF 128-Mbit 32-Mbit/64-Mbit 88-ball 3530B MRC D17 AT52SC1283J atmel 532 atmel 614

    2481D

    Abstract: AT49BN6416T AT49BN6416 AT49BV6416 AT49BV6416T 78910
    Text: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns – Synchronous Burst Frequency – 66 MHz


    Original     		PDF 64-megabit 2481D AT49BN6416T AT49BN6416 AT49BV6416 AT49BV6416T 78910

    AT49BV128

    Abstract: PA30 PA31
    Text: Features • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Sixteen 4K Word Sectors with Individual Write Lockout – Two Hundred Fifty-four 32K Word Main Sectors with Individual Write Lockout


    Original     		PDF

    SA97

    Abstract: AT49BV6416C AT49BV6416CT
    Text: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout


    Original     		PDF 64-megabit 3465C SA97 AT49BV6416C AT49BV6416CT

    3B8000

    Abstract: SA97 sa92
    Text: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout


    Original     		PDF 64-megabit 3366B 3B8000 SA97 sa92

    AT49SN3208

    Abstract: AT49SN3208T AT49SN6416 AT49SN6416T
    Text: Features • 64-megabit 4M x 16 and 32-megabit (2M x 16) Flash Memories • 1.65V - 1.95V Read/Write • High Performance • • • • • • • • • • • • • – Random Access Time – 90 ns – Page Mode Read Time – 20 ns – Synchronous Burst Frequency – 54 MHz


    Original     		PDF 64-megabit 32-megabit 1605C AT49SN3208 AT49SN3208T AT49SN6416 AT49SN6416T

    AT49BN6416

    Abstract: AT49BN6416T AT49BV6416 AT49BV6416T Hardlock drive
    Text: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns – Synchronous Burst Frequency – 66 MHz


    Original     		PDF 64-megabit 2481C AT49BN6416 AT49BN6416T AT49BV6416 AT49BV6416T Hardlock drive

    Atmel 3204

    Abstract: AT49BN3204 AT49BN3204T AT49BN6408 AT49BN6408T AT49BN6416 AT49BN6416T AT49BV641 AT49BV641T BV641
    Text: Features • 64-megabit 4M x 16 and 32-megabit (2M x 16) Flash Memories • 2.7V - 3.1V Read/Write • High Performance • • • • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns – Synchronous Burst Frequency – 66 MHz


    Original     		PDF 64-megabit 32-megabit 2481B Atmel 3204 AT49BN3204 AT49BN3204T AT49BN6408 AT49BN6408T AT49BN6416 AT49BN6416T AT49BV641 AT49BV641T BV641

    SA97

    Abstract: AT49BV6416 AT49BV6416T AT49BV642D AT49BV642
    Text: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout


    Original     		PDF 64-megabit 3451D SA97 AT49BV6416 AT49BV6416T AT49BV642D AT49BV642

    AT49BV6416

    Abstract: AT49BV6416T
    Text: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout


    Original     		PDF 64-megabit AT49BV6416 AT49BV6416T