RN10U
Abstract: No abstract text available
Text: P-TCA-E006 OUTLINE (Type TCA) Type TCA is a tantalum solid electrolytic capacitor which uses conductive polymer as cathode layer. Their equivalent series resistance (ESR) is extremely lowered with the characteristics of the polymer having high electric conductivity.
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P-TCA-E006)
RN10U
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TCA 160c
Abstract: RCR-2368B m1 marking code marking code M1 marking A7 4001
Text: No. P-TCA-003 DATE 2008-10 PRODUCTS DATA SHEET Tantalum Solid Electrolytic Capacitors with Conductive Polymer RoHS COMPLIANT LEAD FREE Type TCA OUTLINE Type TCA is a tantalum solid electrolytic capacitor which uses conductive polymer as cathode layer. Their equivalent series resistance ESR is extremely lowered with the characteristics of the polymer having high electric conductivity.
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P-TCA-003
TCA 160c
RCR-2368B
m1 marking code
marking code M1
marking A7 4001
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RC-2378
Abstract: JIS I
Text: No. P-TCA-001 DATE 2006-12 PRODUCTS DATA SHEET Tantalum Solid Electrolytic Capacitors with Conductive Polymer RoHS COMPLIANT LEAD FREE Type TCA OUTLINE Type TCA is a tantalum solid electrolytic capacitor which uses conductive polymer as cathode layer. Their equivalent series resistance ESR is extremely lowered with the characteristics of the polymer having high electric conductivity.
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P-TCA-001
RC-2378
JIS I
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Untitled
Abstract: No abstract text available
Text: No. P-TCA-002 DATE 2007-11 PRODUCTS DATA SHEET Tantalum Solid Electrolytic Capacitors with Conductive Polymer RoHS COMPLIANT LEAD FREE Type TCA OUTLINE Type TCA is a tantalum solid electrolytic capacitor which uses conductive polymer as cathode layer. Their equivalent series resistance ESR is extremely lowered with the characteristics of the polymer having high electric conductivity.
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P-TCA-002
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tca 945
Abstract: 12A200S IR10 RCR-2368B MARKING CODE JN marking 2501 TCA 208
Text: OUTLINE Type TCA Type TCA is a tantalum solid electrolytic capacitor which uses conductive polymer as cathode layer. Their equivalent series resistance (ESR) is extremely lowered with the characteristics of the polymer having high electric conductivity.
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4001
Abstract: 6032 tca 4001
Text: Part Number Change 251, TCA, TCB, ACA series Item Change 1 Change of case profile "Code" to "Height or 2digit number" plus "Code". Part Number Change New Case Code：＊ ＊ Ｓ Example （2 digits Height pluse Case Size TCA series with standard height never print 2 digit code.
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7343L
Abstract: tca 4001
Text: OUTLINE Type TCA is a tantalum solid electrolytic capacitor which uses conductive polymer as cathode layer. Their equivalent series resistance ESR is extremely lowered with the characteristics of the polymer having high electric conductivity. This ensures higher permissible ripple current and excellent noise absorption performance on high-frequency circuits.
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tca 4001
Abstract: TCA 208 al 336 IR10 RCR-2368B TCA 150 t
Text: 概 要 ＴＣＡ型は陰極層に導電性高分子を使用したタンタル固体電解コンデンサです。 導電率が高い導電性高分子を採用したことにより、大幅に等価直列抵抗（ＥＳＲ）を低減しました。
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10470m
3216L
7343L
100kHz
RCR-2368B
TEL0332958800
FAX0332954213
TEL0566773211
FAX0566771870
TEL0663320883
tca 4001
TCA 208
al 336
IR10
RCR-2368B
TCA 150 t
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tca 945
Abstract: tca 680 TCA 105 N TCA 208 IR10 RCR-2368B mr20d 15S200 tca 4001
Text: ＴＣＡ型 ＴＣＡ型は陰極層に導電性高分子を使用したタンタル固体電解コンデンサです。 導電率が高い導電性高分子を採用したことにより、大幅に等価直列抵抗（ＥＳＲ）を低減しました。
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10470m
3216L
7343L
12A20DTmax.
100kHz
RCR-2368B
TEL033295-8800
TEL056677-3211
TEL066332-0883
tca 945
tca 680
TCA 105 N
TCA 208
IR10
RCR-2368B
mr20d
15S200
tca 4001
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4001
Abstract: 251M
Text: 製品形名の変更点について ２５１型ＴＣＡ型、ＴＣＢ型、ＡＣＡ型 対象品種 変更点① “ケース記号”の製品高さを示す数値を２桁の構成に変更いたします。 【例】 ケース記号：＊ ＊ Ｓ
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PLX9050
Abstract: C143 ESP C144 ESP xc95216pq160 plx vhdl code 3F6 smd a/transistor c114 esp 96F8740 smd code STPA 1410G6
Text: PM5351 S/UNI-155-TETRA RELEASED REFERENCE DESIGN PMC-1991709 ISSUE 1 S/UNI 155 TETRA WITH S/UNI ATLAS REFERENCE DESIGN PM5351 S/UNI-155 TETRA WITH S/UNI ATLAS REFERENCE DESIGN RELEASED ISSUE 1: SEPTEMBER 2001 PROPRIETARY AND CONFIDENTIAL TO PMC-SIERRA, INC., AND FOR ITS CUSTOMERS’ INTERNAL USE
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PM5351
S/UNI-155-TETRA
PMC-1991709
PM5351
S/UNI-155
PLX9050
C143 ESP
C144 ESP
xc95216pq160
plx vhdl code
3F6 smd
a/transistor c114 esp
96F8740
smd code STPA
1410G6
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ultrasonic flowmeter circuit
Abstract: No abstract text available
Text: Always a good solution Overview of process instrumentation and measurement solutions Contents KROHNE trademarks used in this brochure: KROHNE AST CalSys CARGOMASTER Configure it EcoMATE KROHNE Care OPTIBATCH OPTIFLEX OPTIFLUX OPTIMASS OPTISONIC OPTISOUND OPTISWIRL
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Overview-R03-en
ultrasonic flowmeter circuit
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BB113
Abstract: receiver tca440 vogt l3 Coil Assembly Vogt D41-2519 vogt l7 BB113 diode VOGT x1 TCA440 diode aa118 vogt D21-2375.1
Text: i SIEM EN S TCA 440 AM Receiver Circuit AM receiver circuit for LW, MW, and SW in battery and line operated radio receivers. It includes an RF prestage with AGC, a balanced mixer, separate oscillator, and an IF amplifier with AGC. Because of its internal stabilization, all characteristics are largely independent of the
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TCA440
100mVrm
BB113
BB113
receiver tca440
vogt l3
Coil Assembly Vogt D41-2519
vogt l7
BB113 diode
VOGT x1
TCA440
diode aa118
vogt D21-2375.1
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BB113
Abstract: BB113 diode tda 1432 TCA440 Coil Assembly Vogt D41-2519 receiver tca440 Siemens TCA440 diode aa118 vogt l7 vogt
Text: i S IE M E N S TCA 440 AM Receiver Circuit AM receiver circuit for LW, MW, and SW in battery and line operated radio receivers. It includes an RF prestage with AGC, a balanced mixer, separate oscillator, and an IF amplifier with AGC. Because of its internal stabilization, all characteristics are largely independent of the
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15pacitance
TCA440
BB113
BB113
BB113 diode
tda 1432
TCA440
Coil Assembly Vogt D41-2519
receiver tca440
Siemens TCA440
diode aa118
vogt l7
vogt
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k3882
Abstract: TAA 981 E25C5 TC8066PB sn 8400 sn 8408 selen-gleichrichter Halbleiterbauelemente DDR A109D SY 170
Text: [ n r D D lk D ^ i^ B lB k f a n a n ilK Halbleiter-Bauelemente Kurzinformation D ie M ik ro e le k tro n ik e rw e is t sich in te rn a tio n a l m e h r u n d m eh r a ls e in e n ts c h e id e n d e r F a k to r be i d e r D u rc h s e tz u n g d e s w isse n s c h a ftlic h -te c h n is c h e n F o rts c h ritte s a lle r B ere ich e d e r W irts c h a ft un d
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Untitled
Abstract: No abstract text available
Text: MEMORY CMOS 2 M x 8 BIT HYPER PAGE MODE DYNAMIC RAM MB81V17805B-50/-60/-50L/-60 L CMOS 2,097,152 x 8 Bit Hyper Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB81V17805B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 8-bit increments. The MB81V17805B features a “hyper page” mode of operation whereby
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MB81V17805B-50/-60/-50L/-60
MB81V17805B
MB81V17805B
MB81V17805B-50/-60/-50L/-60L
28-pin
FPT-28P-M14)
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itr 8102
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT jjPD42S17800L, 4217800L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE D e s c rip tio n The /iPD42S17800L, 4217800L are 2,097,152 words by 8 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.
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uPD42S17800L
uPD4217800L
/iPD42S17800L,
4217800L
PD42S17800L
28-pin
VP15-207-2
itr 8102
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Untitled
Abstract: No abstract text available
Text: CMOS DRAM KM41C4001A 4 M X 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 41C 4001A is a CMOS high speed 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory, Its design is optimized for high performance applications
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KM41C4001A
41C4001
KM41C4001A-1
180ns
18-LEAD
20-LEAD
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MSD 7818
Abstract: MN9106 information applikation 7490 N TDA 5700 information applikation mikroelektronik udssr hefte 143KT1 Mikroelektronik Information Applikation K 176 LE, K 561 LN
Text: In n in ik ü r Q fâ lI Information Applikation RGW Typen übersicht + Vergleich TeiM UdSSR JitfÆÊL JUUUUUUL&JJJUL i m i n i ^ r ^ c z l c i c b p o n Information Applikation , 9 H E F T 4 9 * R G W T y p e n ü b e r s i c h t + V e r g l e i c h Teil 1
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6250b
MSD 7818
MN9106
information applikation
7490 N
TDA 5700
information applikation mikroelektronik
udssr hefte
143KT1
Mikroelektronik Information Applikation
K 176 LE, K 561 LN
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Untitled
Abstract: No abstract text available
Text: MEMORY CMOS 1 M x 16 BIT HYPER PAGE MODE DYNAMIC RAM MB81V16165B-50/-60 CMOS 1,048,576 x 16 Bit Hyper Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB81V16165B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 16-bit increments. The MB81V16165B features a “hyper page” mode of operation whereby
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MB81V16165B-50/-60
MB81V16165B
16-bit
MB81V16165B
MB8118165B
50-pin
FPT-50P-M06)
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HBF4727A
Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
Text: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product
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Untitled
Abstract: No abstract text available
Text: si KM41C4001A CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 41C 4001A is a CMOS high speed 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM41C4001A
41C4001
18-LEAD
20-LEAD
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LH64400
Abstract: m4006 sharp LH64400
Text: PRELIMINARY LH64400 / FEATURES • 1,048,576 x 4 bit organization • Access times: 80/100 ns MAX. • • C M O S 4M (1M x 4) Dynamic RA M PIN CONNECTIONS TO P VIEW 20-PIN DIP Cycle times: 140/160 ns (MIN.) Cycle time in high speed page mode: 50/55 ns (MIN.)
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LH64400
20-pin,
300-mil
26-pin,
400-mil
LH64400
m4006
sharp LH64400
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Untitled
Abstract: No abstract text available
Text: MEMORY CMOS 1M x 16 BITS FAST PAGE MODE DYNAMIC RAM MB81V16160 A-60/60L/-70/70L CMOS 1,048,576 x 16 BITS Fast Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB81V16160A is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 16-bit increments. The MB81V16160A features a “fast page” mode of operation whereby
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MB81V16160
-60/60L/-70/70L
MB81V16160A
16-bit
256-bits
MB81V16160A
F50006S-2C-1
MB81V16160A-60/60L/-70/70L
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