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    Toshiba America Electronic Components TC58DVM82A1XBJ1ABH

    256-MBIT (32M X 8 BITS) CMOS NAND E2PROM EEPROM, 32MX8, 35ns, Serial, CMOS, PBGA56
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    TC58DVM82A1XBJ1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TC58DVM82A1XBJ1 Toshiba 256 MBit (32M x 8 Bit) CMOS NAND E2PROM Original PDF

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    TC58DVM82A1XBJ1

    Abstract: No abstract text available
    Text: TC58DVM82A1XBJ1 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT 32M u 8 BITS CMOS NAND E2PROM DESCRIPTION The device is a 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes u 32 pages u 2048 blocks. The device uses single power supply (2.7 V to 3.6


    Original     		PDF TC58DVM82A1XBJ1 256-MBIT 528-byte TC58DVM82A1XBJ1