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    TC518129

    Abstract: TC518129AFWI-10
    Text: TOSHIBA TC518129AFWI-10 SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The T C 5 1 8 1 29AFW I is a 1M bit high speed C M O S p se udo static RAM organized as 131,07 2 w o rd s by 8 bits. T h e T C 5 1 8 1 29AFW I utilizes a on e tra nsistor d yn am ic m e m ory cell w ith C M O S peripheral circuitry to provide high capacity, high speed a nd low p o w e r


    OCR Scan     		PDF TC518129AFWI-10 29AFW D-122 T08HIBA D-123 TC518129 TC518129AFWI-10

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    Abstract: No abstract text available
    Text: TOSHIBA TC518129AFWI-10 SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129AFWI is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129AFWI utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power


    OCR Scan     		PDF TC518129AFWI-10 TC518129AFWI TC518129AFWI D-121 D-122 D-123