TC 9122 Search Results

TC 9122 Result Highlights (5)

Part	Manufacturer	Description
BLA0912-250	Rochester Electronics LLC	BLA0912-250 - N-Channel LDMOS Avionics LDMOS Transistor (Ampleon Die)
SER2009-122MLD	Coilcraft Inc	General Purpose Inductor, 1.2uH, 20%, 1 Element, Ferrite-Core, SMD, 7674, ROHS COMPLIANT
SER2009-122	Coilcraft Inc	Power inductor, high current, 10% tol, SMT, RoHS
SER2009-122MLB	Coilcraft Inc	General Purpose Inductor, 1.2uH, 20%, 1 Element, Ferrite-Core, SMD, 7674, ROHS COMPLIANT
SER2009-122ML	Coilcraft Inc	Power inductor, high current, 10% tol, SMT, RoHS

TC 9122 Datasheets (5)

Part	Manufacturer	Description	Datasheet Type	PDF
TC9122P	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
TC9122P	Toshiba	High Speed BCD Programmable Counter	Scan	PDF
TC9122P-23	Toshiba	HIGH-SPEED BCD PROGRAMMABLE COUNTER	Scan	PDF
TC9122P-45	Toshiba	HIGH-SPEED BCD PROGRAMMABLE COUNTER	Scan	PDF
TC9122PT	Toshiba	HIGH-SPEED BCD PROGRAMMABLE COUNTER	Scan	PDF

TC 9122 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IRFM9034 Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261 Text: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number	Original	PDF	IRHE7110 IRHE7130 IRHE7230 IRHE8110 IRHE8130 IRHE8230 IRHE9130 IRHE9230 IRHG7110 IRHG6110 IRFM9034 irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
Untitled Abstract: No abstract text available Text: PD - 91224D IRHM7360SE JANSR2N7391 400V, N-CHANNEL REF:MIL-PRF-19500/661 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHM7360SE Radiation Level RDS(on) 100K Rads (Si) 0.20Ω ID 22A QPL Part Number	Original	PDF	91224D IRHM7360SE JANSR2N7391 MIL-PRF-19500/661 O-254AA) IRHM57163SED IRHM57163SEU MIL-PRF-19500
TO-254 Abstract: 91224D IRHM7360SE JANSR2N7391 Text: PD - 91224D IRHM7360SE JANSR2N7391 400V, N-CHANNEL REF:MIL-PRF-19500/661 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHM7360SE Radiation Level RDS(on) 100K Rads (Si) 0.20Ω ID 22A QPL Part Number	Original	PDF	91224D IRHM7360SE JANSR2N7391 MIL-PRF-19500/661 O-254AA) IRHM57163SED IRHM57163SEU MIL-PRF-19500 TO-254 91224D IRHM7360SE JANSR2N7391
IRHM7360SE Abstract: No abstract text available Text: PD - 91224C IRHM7360SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 400Volt, 0.20Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-radiation test	Original	PDF	91224C IRHM7360SE 400Volt, IRHM7360SE
IRHM7450SE Abstract: aval Text: PD - 91223C IRHM7450SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 500Volt, 0.51Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irrradiation	Original	PDF	91223C IRHM7450SE 500Volt, Rectifi10) IRHM7450SE aval
Untitled Abstract: No abstract text available Text: PD-91224E RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA IRHM7360SE JANSR2N7391 400V, N-CHANNEL REF:MIL-PRF-19500/661 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHM7360SE Radiation Level RDS(on) 100K Rads (Si) 0.20Ω ID QPL Part Number	Original	PDF	PD-91224E O-254AA) IRHM7360SE JANSR2N7391 MIL-PRF-19500/661 O-254AA applicatio54AA. MIL-PRF-19500
Untitled Abstract: No abstract text available Text: PD - 91223D IRHM7450SE 500V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHM7450SE Radiation Level RDS(on) 100K Rads (Si) 0.51Ω ID 12A International Rectifier’s RADHardTM HEXFET® MOSFET	Original	PDF	91223D IRHM7450SE O-254AA) IRHM57163SED IRHM57163SEU MIL-PRF-19500
IRHM7450SE Abstract: 400V to 12V DC Regulator Text: PD - 91223D IRHM7450SE 500V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHM7450SE Radiation Level RDS(on) 100K Rads (Si) 0.51Ω ID 12A International Rectifier’s RADHardTM HEXFET® MOSFET	Original	PDF	91223D IRHM7450SE O-254AA) IRHM57163SED IRHM57163SEU MIL-PRF-19500 IRHM7450SE 400V to 12V DC Regulator
10RIA10 Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF Text: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy	Original	PDF	DO-203AA HFA40HF120 HFA40HF60 O-254AA HFA35HB120 HFA35HB120C HFA35HB60 HFA35HB60C O-258AA HFA45HC120C 10RIA10 HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
9137 Abstract: surface mount IRFZ44N IRFK3D450 IRFK4H054 IRLI640G IRFBg30 equivalent hexfet power mosfets international rectifier IRFP260 IRC540 equivalent irf 3250 Text: HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) Rθ A Max Thermal Resistance (°C/W) P Max.	Original	PDF	OT-23) IRLML2402* IRLML2803 IRLML5103 IRLML6302* IRFK3DC50 IRFK3F150 O-240AA IRFK3F250 IRFK3F350 9137 surface mount IRFZ44N IRFK3D450 IRFK4H054 IRLI640G IRFBg30 equivalent hexfet power mosfets international rectifier IRFP260 IRC540 equivalent irf 3250
semiconductor Abstract: hirect H507CH Hirect diode H400TB Text: SEMICONDUCTOR DESIGN GUIDE Hind Rectifiers Ltd ISO 9001-2000 Contents Page no. ► Rectifier Diodes 1 Top Hat Type 2) Capsules and Fast Recovery Diode 3) Modules Isolated Base) a) Diode-Diode Modules b) Single Phase Bridge c) Three Phase Bridge 1 3 5 5 5	Original	PDF
IRGKI165F06 Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103 Text: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)	Original	PDF	OT-23) IRLML2402* IRLML2803 IRLML5103 IRLML6302* IRGKI165F06 IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
IRFP350LC Abstract: No abstract text available Text: IRFP350LC, SiHFP350LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V 0.30 Qg (Max.) (nC) 76 Qgs (nC) 20 Qgd (nC) 37 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247	Original	PDF	IRFP350LC, SiHFP350LC O-247 18-Jul-08 IRFP350LC
IRFP360LC Abstract: No abstract text available Text: IRFP360LC, SiHFP360LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V 0.20 Qg (Max.) (nC) 110 Qgs (nC) 28 Qgd (nC) 45 Configuration Single D COMPLIANT This new series of low charge Power MOSFETs achieve	Original	PDF	IRFP360LC, SiHFP360LC O-247 18-Jul-08 IRFP360LC

Untitled Abstract: No abstract text available Text: IRFP340, SiHFP340 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V 400 RDS(on) (Ω) • Repetitive Avalanche Rated VGS = 10 V 0.55 Qg (Max.) (nC) 62 Qgs (nC) 10 Qgd (nC) 30 Configuration • Isolated Central Mounting Hole	Original	PDF	IRFP340, SiHFP340 O-247 O-220 12-Mar-07
B60C 800 Si Abstract: 0/B60C 800 Si Text: 1 I n t e r n a t io n a l R e c t i f i e r G o v e rn m e n t a n d S p a c e P ro d u c ts Paît Number 2 BV[)SS (Volts) RDS(on) (Ohms) Ip • Tc°25° (Amps) Id 9 TC«100" (Amps) Total Dos* Rating Rads (Si) Pd O Tc=25* (Watts) 15 7 15.3 12.7 6.0 24.3	OCR Scan	PDF	IRHN7254SE IRHN7450SE IRHNA73b IRHNA7460SE IRHN7C50SE IRHNA7264SE IRH72545E IRHM7264SE IRH7450SE IRH7C50SE B60C 800 Si 0/B60C 800 Si
452 diode Abstract: No abstract text available Text: Zero-TC Reference Diodes Part Number ; Microsemi Division Scottsdale 1N4S65A Scottsdale 1N4565A-1 Scottsdale 1N4566 Scottsdale 1N4566-1 Scottsdale 1N4566A Scottsdale 1N4566A-1 Scottsdale 1N4567 Scottsdale 1N4567-1 Scottsdale 1N4567A Scottsdale 1N4567A-1 Scottsdale	OCR Scan	PDF	DO-35 452 diode
Untitled Abstract: No abstract text available Text: Government and Space Products Internationa! XQR Rectifier p *0 Part RDS on bVDSS (V) Number T c=, 2 r c (A) D @ TC = 25°C (W) T , = lOO°C (A) HEXFET Power MOSFETs Fax Case on Demand Outline Number Key SEE Hardened TO-254AA N-Channel 31 19 250 91393 T	OCR Scan	PDF	O-254AA O-259AA O-254AA O-204AA
tc 9123 Abstract: IC 9122 IRFF9121 IRFF9122 IRFF9120 IRFF9123 9121 Text: SILICONIX INC IflE I> f Ô254735 D014Ô33 2 U IRFF9120/9121 /9122/9123 « y S ilìc o n ix J M • in c o r p o ra te d P-Channel Enhancement Mode Transistors " T - l 0! - ! 0 ! TQ-205AF BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V BR DSS IRFF9120 •d ,Dg r	OCR Scan	PDF	IRFF9120/9121/9122/9123 IRFF9120 IRFF9121 IRFF9122 IRFF9123 O-205AF tc 9123 IC 9122 9121
Untitled Abstract: No abstract text available Text: 4 3 0 5 2 7 1 □ □ 5 4 5 ci? tBT • H a r r is HAS IR F F 9120, IR F F 9121 IR F F 9122, IR F F 9123 Avalanche Energy Rated P-Channel Power MOSFETs January 1994 Features Package T 0 -2 0 5 A F • -3.5 A and -4A , -8 0 V and -1 0 0 V BOTTOM VIEW • rDS ON = o .e o n and 0.80 H	OCR Scan	PDF	IRFF9120, IRFF9121, IRFF9122 IRFF9123
TC5082P Abstract: 9101p 6129P 9122P 5082P 2058F 9198P TA8460F 6134a 8191F Text: Frequency Synthesizer C lassifica tion T y p « No. F un ction Pa ckage T C 5081A P P h ase com p a ra to r T C 5082P /P -L H igh-speed divid er 1/256, 1/1024, 1/2048, 1/4096 T C 9122P H igh-speed pro g ra m m a b le c o u n te r BC D 1/3999 T C 9101P /F P LL fo r M C A /P e rson al radio	OCR Scan	PDF	5082P 9122P 9101P 9198P 9223P 9216P 9217P 6127B 6128P 6129P TC5082P 2058F TA8460F 6134a 8191F
IRF9120 Abstract: IRFP9120 IRF9120 mosfet IRF9121 IRF 9520 IRF 9120 IRF912213 IRF 9122 IRF9520 IRFP9121 Text: IRF9120/912110122/9123 « IRFP9120/9121 /9122/9123: IRF9520/9521 /9Ö22/9523 •. P-CHANNEL POWER MOSFETS P r e l i m i n a r y Sn&nifinatinncì Tfi DE 7 clfc>41Lt2 D0054DE 1 \| ” uuv/i öUmiviAKY •y*' 3 ^ SAMSUNG SEM ICO ND UC TOR INC -1 0 0 volt, 0.60 Ohm SFET	OCR Scan	PDF	IRF9120/912110122/9123 IRFP9120/9121 IRF9520/9521 D0054DE IRF/IRFP9120, IRF9520 IRF/IRFP9121, IRF9521 IRF/IRFP9122, IRF9522 IRF9120 IRFP9120 IRF9120 mosfet IRF9121 IRF 9520 IRF 9120 IRF912213 IRF 9122 IRFP9121
USART 8251 Abstract: P8251A pin configuration of 8251 usart D8251A MD8251A MD8251 pin diagram 8251A block diagram 8251A 8251a tc 9123 Text: 8251A Program m able Communication In terface DISTINCTIVE CHARACTERISTICS G ENERAL DESCRIPTION • Synchronous operation up to 64K baud The AM D 8251A is the enhanced version of the industry sta n d a rd 8251 U n ive rsa l S y n c h ro n o u s /A s y n c h ro n o u s	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: International PD'9-1229 [jogRectifier_ IRFP350LC HEXFET Power MOSFET • • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced Cjgg, C0Ss, ^rss Isolated Central Mounting Hole Dynamic dv/dt Rated	OCR Scan	PDF	IRFP350LC

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TC 9122 Search Results

TC 9122 Result Highlights (5)

TC 9122 Datasheets (5)

TC 9122 Datasheets Context Search

IRFM9034

Untitled

TO-254

IRHM7360SE

IRHM7450SE

Untitled

Untitled

IRHM7450SE

10RIA10

9137

semiconductor

IRGKI165F06

IRFP350LC

IRFP360LC

Untitled

B60C 800 Si

452 diode

Untitled

tc 9123

Untitled

TC5082P

IRF9120

USART 8251

Untitled