Hitachi DSA00166
Abstract: Nippon capacitors
Text: HB56S864ES-6/7 8,388,608-word x 64-bit High Density Dynamic RAM Module ADE-203-780A Z Rev. 1.0 May. 9, 1997 Description The HB56S864ES belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The
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HB56S864ES-6/7
608-word
64-bit
ADE-203-780A
HB56S864ES
16-Mbit
HM5116405)
16-bit
74ABT16244)
Hitachi DSA00166
Nippon capacitors
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Hitachi DSA00164
Abstract: Nippon capacitors
Text: HB56S864ES-6/7 8,388,608-word x 64-bit High Density Dynamic RAM Module ADE-203-780A Z Rev. 1.0 May. 9, 1997 Description The HB56S864ES belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The
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HB56S864ES-6/7
608-word
64-bit
ADE-203-780A
HB56S864ES
16-Mbit
HM5116405)
16-bit
74ABT16244)
Hitachi DSA00164
Nippon capacitors
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs Preliminary Spec. Specifications subject to change without notice. MH4V7245AWXJ -5, -6 HYPER PAGE MODE 301989888 - BIT 4194304 - WORD BY 72 - BIT DYNAMIC RAM DESCRIPTION The MH4V7245AWXJ is 4194304-word x 72-bit dynamic ram module. This consist of four industry standard 4M x
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MH4V7245AWXJ
4194304-word
72-bit
85pin
94pin
10pin
95pin
MIT-DS-0095-0
25/Feb
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-428000F32 8 M-WORD BY 32-BIT DYNAMIC RAM MODULE HYPER PAGE MODE EDO Description The MC-428000F32 is a 8,388,608 words by 32 bits dynamic RAM module on which 16 pieces of 16 M DRAM: µPD4217405 are assembled. This module provides high density and large quantities of memory in a small space without utilizing the surfacemounting technology on the printed circuit board.
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MC-428000F32
32-BIT
MC-428000F32
PD4217405
MC-428000F32-60
MC-428000F32-70
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Untitled
Abstract: No abstract text available
Text: SMART SM5361640U4PXUU Modular Technologies December 16, 1998 Revision History • December 16, 1998 Modified DC characteristics on page 4. • August 9, 1998 Datasheet Released. Corporate Headquarters: 4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel: 510 623-1231 • Fax:(510) 623-1434 • E-mail: [email protected]
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SM5361640U4PXUU
64MByte
16Mx4
72-pin
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-422000FB72 2 M-WORD BY 72-BIT DYNAMIC RAM MODULE HYPER PAGE MODE EDO Description The MC-422000FB72 is a 2,097,152 words by 72 bits dynamic RAM module on which 9 pieces of 16 M DRAM: µPD4217805 are assembled. This module provides high density and large quantities of memory in a small space without utilizing the surfacemounting technology on the printed circuit board.
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MC-422000FB72
72-BIT
MC-422000FB72
PD4217805
MC-422000FB72-60
MC-422000FB72-70
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code edo
Abstract: edo dram 60ns 72-pin simm IBM 1Mx4
Text: IBM11D1475B 10/10, 5.0V, Sn/Pb, 1M xAuMMDS47DSU-021044622. 3210/10, 5.0V, Sn/Pb, AuMMDS47DSU-021044622. IBM11E1475B 2M x 3210/10, IBM11E2475B2M 5.0V, Sn/Pb, x 3210/10, AuMMDS47DSU-021044622. 5.0V, Sn/Pb, AuMMDS47DSU-021044622. IBM11D2475B1M x 32 IBM11D1475B IBM11D2475B
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AuMMDS47DSU-021044622.
IBM11E2475B2M
IBM11D1475B
xAuMMDS47DSU-021044622.
IBM11E1475B
IBM11D2475B1M
IBM11D2475B
code edo
edo dram 60ns 72-pin simm
IBM 1Mx4
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8mx32 simm 72 pin
Abstract: edo dram 60ns 72-pin simm
Text: IBM11D4475B 11/11, 5.0V, Sn/Pb, 4M xAuMMDS47DSU-021044522. 3211/11, 5.0V, Sn/Pb, AuMMDS47DSU-021044522. IBM11E4475B 8M x 3211/11, IBM11E8475B8M 5.0V, Sn/Pb, x 3211/11, AuMMDS47DSU-021044522. 5.0V, Sn/Pb, AuMMDS47DSU-021044522. IBM11D8475B4M x 32 IBM11D4475B IBM11D8475B
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AuMMDS47DSU-021044522.
IBM11E8475B8M
IBM11D4475B
xAuMMDS47DSU-021044522.
IBM11E4475B
IBM11D8475B4M
IBM11D8475B
8mx32 simm 72 pin
edo dram 60ns 72-pin simm
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EDO RAM Drawing
Abstract: MB641BT58TADG60 MB641BT58TADG70 MB642BT58TADG60 MB642BT58TADG70
Text: Order this document by 3VEDOB64D/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1, 2M x 64 DRAM Dual-In-Line Memory Module DIMM 3.3 V, EDO, Buffered 8 and 16 Megabyte • JEDEC–Standard 168–Lead Dual–In–Line Memory Module (DIMM) • Single 3.3 V Power Supply, LVTTL–Compatible Inputs and Outputs
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3VEDOB64D/D
8MB/16MB:
MB641BT58TADG60
3VEDOB64D
EDO RAM Drawing
MB641BT58TADG60
MB641BT58TADG70
MB642BT58TADG60
MB642BT58TADG70
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Untitled
Abstract: No abstract text available
Text: SMART SM5720430U4D6GU Modular Technologies September 11, 1997 32MByte 4M x 72 DRAM Module - 4Mx16 based 168-pin DIMM, Non-buffered, ECC Features Part Numbers • • • • • • • • • • • SM572043014D6GU SM572043194D6GU Standard : JEDEC
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SM5720430U4D6GU
32MByte
4Mx16
168-pin
SM572043014D6GU
SM572043194D6GU
50/60/70ns
400mil
AMP-390052-6
SM5720440UUDUGU
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5165165
Abstract: Hitachi DSA00164 Nippon capacitors
Text: HB56EW472ETC-A Series, HB56EW872ETK-A Series 32/64MB Buffered EDO DRAM DIMM 4-Mword x 72-bit, 4k Refresh, 1 Bank Module 4 pcs of 4M × 16 & 2 pcs of 4M × 4 components 8-Mword × 72-bit, 4k Refresh, 2 Bank Module (8 pcs of 4M × 16 & 4 pcs of 4M × 4 components)
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HB56EW472ETC-A
HB56EW872ETK-A
32/64MB
72-bit,
ADE-203-844
HB56EW472ETC-A,
64-Mbit
5165165
Hitachi DSA00164
Nippon capacitors
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IC 741 OPAMP
Abstract: SAA 1251 7106CPL TDA2620 SAA1121 LM 4440 AUDIO AMPLIFIER CIRCUIT touch dimmer TC 306H TDA 2310 TDA 2060 7107CPL
Text: Lineaire IC’s Lineaire IC’s dil to 99 dil 8 to 99 dil 18 to 78 to 99 dil 20 to 99 cer dip to 78 Wij leveren een groot aantal lineaire ic's uit voorraad. Kunt u een bepaald type niet vinden, aarzel dan niet ons telefonisch te raadplegen. Veelal kunnen wij u op korte
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Nippon capacitors
Abstract: No abstract text available
Text: HB56EW472ETC-A Series HB56EW872ETK-A Series 32/64MB Buffered EDO DRAM DIMM 4-Mword x 72-bit, 4k Refresh, 1 Bank Module 4 pcs of 4M × 16 & 2 pcs of 4M × 4 components 8-Mword × 72-bit, 4k Refresh, 2 Bank Module (8 pcs of 4M × 16 & 4 pcs of 4M × 4 components)
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HB56EW472ETC-A
HB56EW872ETK-A
32/64MB
72-bit,
ADE-203-844
HB56EW472ETC-A,
64-Mbit
Nippon capacitors
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M5M44100
Abstract: MH4M36CJD-5 MH4M36CJD-6 MH4M36CJD-7 M5M44100CTP
Text: MITSUBISHI LSIs MH4M36CJD-5,-6,-7 FAST PAGE MODE 4194304-WORD BY 36-BIT DYNAMIC RAM PIN CONFIGURATION ( TOP VIEW ) DESCRIPTION The MH4M36CJD is an 4M word by 36-bit dynamic RAM module and consists of 8 industry standard 4M X 4 dynamic RAMs in TSOP and 4 industry
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MH4M36CJD-5
4194304-WORD
36-BIT
MH4M36CJD
36-bit
64-pin
MH4M36CJD-5
MH4M36CJD-6
MH4M36CJD-7
MIT-DS-0035-0
M5M44100
MH4M36CJD-6
MH4M36CJD-7
M5M44100CTP
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RM1S
Abstract: automatic room power control circuit block diagram TBA520 TBA810S TAA630S TBA510 TBA970 iA781 am ssb fm demodulator a3089
Text: CONSUMER CIRCUIT SELECTION GUIDE BY FUNCTION TV Circuits Function AFT M 3064 Sound IF Amp. Lim. Detector //A 3065 Video Amplifier TBA970 Chroma Processing NTSC AiA746 , n A 780 , M 781 , /uA787 , M 788 Chroma Processing PAL TAA 630 S, TBA 510 , TBA 520 , TBA 540 , TBA 560 C, TBA990
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//A3064
//A3065
TBA970
//A746,
//A780,
//A781,
//A787,
//A788
TAA630S,
TBA510,
RM1S
automatic room power control circuit block diagram
TBA520
TBA810S
TAA630S
TBA510
TBA970
iA781
am ssb fm demodulator
a3089
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Untitled
Abstract: No abstract text available
Text: ¿/iiuiu. luööutiy, rwufucuy io, Revision: August 18,1994 ^ CYPRESS CY27H010 128K X 8 High-Speed CMOS EPROM Features Functional Description • CMOS for optimum speed/power • Highspeed — tAA = 25 ns max. commercial — *a a = 35 ns max. (military)
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CY27H010
32-pin
32-pin,
600-mil
CY27H010
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Untitled
Abstract: No abstract text available
Text: CY7B1094 CY7B1095 CY7B1096 a. PRELIMINARY s s s r^ Y P P F C ;9 y SEMICONDUCTOR Features • High speed — tAA = 6 ns • BiCMOS for optimum speed/power • Low active power — 900 mW • Low standby power — 350 mW • Automatic power-down when deselected
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CY7B1094
CY7B1095
CY7B1096
CY7B1094,
CY7B1095,
CY7B1096
T-90-20
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A1312
Abstract: tba810s st TAA630S TBA510 TBA520 TBA970 A3065 double channel double balanced demodulators IF am VIDEO DEMODULATOR synchronous color killer circuits block diagram
Text: CONSUMER CIRCUIT SELECTION GUIDE BY FUNCTION TV Circuits Function AFT M 3064 Sound IF Am p. Lim. Detector //A 3065 Video Amplifier T BA 970 Chrom a Processing N T S C AiA746 , n A 780, M 781, /uA787 , M 788 Chrom a Processing P A L TAA 630 S, T BA 510 , T B A 520, T B A 540 , T B A 560 C, TBA 990
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//A3064
//A3065
TBA970
//A746,
//A780,
//A781,
//A787,
//A788
TAA630S,
TBA510,
A1312
tba810s st
TAA630S
TBA510
TBA520
TBA970
A3065
double channel double balanced demodulators
IF am VIDEO DEMODULATOR synchronous
color killer circuits block diagram
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81v1
Abstract: No abstract text available
Text: PRELIMINARY - - August 1996 Edition 3.0 FUJITSU PRODUCT PROFILE SHEET MB 81 V1 7800A-60/70/60L/70L CMOS 2M X 8BIT FAST PAGE MODE DYNAMIC RAM CMOS 2,097,152 x 8BIT Fast Page Mode Dy na m ic RAM The Fujitsu M B81V17800A is a fully decoded CM OS Dynamic RAM DRAM that contains
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800A-60/70/60L/70L
B81V17800A
024-bits
DS05-10169-2E
81v1
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7805L
Abstract: IPD42S17805LG5-A70 17805Lg5-a60
Text: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT /¿PD 4 2 S 1 7 8 0 5 L , 4 2 1 7 8 0 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, HYPER PAGE MODE Description T he ¿¿PD42S17805L, 4 2 1 7805L are 2 ,0 9 7 ,1 5 2 w o rd s by 8 bits C M O S dy n a m ic R A M s w ith o p tio nal hype r page
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uPD42S17805L
uPD4217805L
42S17805L
42S17805L,
7805L
28-pin
PD42S17805L,
4217805L
jPD42S1
780SL,
IPD42S17805LG5-A70
17805Lg5-a60
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Untitled
Abstract: No abstract text available
Text: GM71V17800C GM71V^7800CL LG Semicon Co.,Ltd. 2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM Description Features The GM71 V S 17800C/CL is the new generation dynamic RAM organized 2,097,152 x 8 bit. GM71 V(S)17800C/CL has realized higher density, higher performance and various
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GM71V17800C
GM71V
7800CL
17800C/CL
28pin
400mi!
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SIT8103AC-13-33E-24.00000T
Abstract: No abstract text available
Text: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT _ I1PD42S1780QL, 42178QQL 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description The jUPD42S17800L, 4217800L are 2,097,152 w ords by 8 bits CMOS dynamic RAMs. The fast page mode
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uPD42S1780QL
42178QQL
jUPD42S17800L,
4217800L
PD42S17800L
28-pin
jiPD42S17800L-A60
4217800L-A60
/JPD42S17800L-A70,
SIT8103AC-13-33E-24.00000T
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET CM O S INTEGRATED CIRCUIT JE C / MC-428000F32 8 M-WORD BY 32-BIT DYNAMIC RAM MODULE HYPER PAGE MODE EDO Description The MC-428000F32 is a 8,388,608 words by 32 bits dynamic RAM module on which 16 pieces of 16M DRAM: ¿iPD4217405 are assembled.
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MC-428000F32
32-BIT
MC-428000F32
iPD4217405
427S2S
00blb27
M72B-60AES
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MC-428000F32
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT MC-428000F32 8 M-WORD BY 32-BIT DYNAMIC RAM MODULE HYPER PAGE MODE EDO Description The MC-428000F32 is a 8,388,608 words by 32 bits dynamic RAM module on which 16 pieces of 16 M DRAM: /¿PD4217405 are assembled. This module provides high density and large quantities of memory in a small space without utilizing the surfacemounting technology on the printed circuit board.
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MC-428000F32
32-BIT
MC-428000F32
uPD4217405
72B-50A55
L427525
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