jk 13001
Abstract: tr 13001 13001 SD marking jk ENN6863 MCH3310 ta306 ta-306
Text: Ordering number : ENN6863 MCH3310 P-Channel Silicon MOSFET MCH3310 Ultrahigh-Speed Switching Applications Features • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2167 [MCH3310] 0.25 • 0.3 0.15 2 0.65 0.25 1 2.1
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ENN6863
MCH3310
MCH3310]
jk 13001
tr 13001
13001 SD
marking jk
ENN6863
MCH3310
ta306
ta-306
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TA 68634
Abstract: SQD50N03-06P
Text: SQD50N03-06P Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free 30 RDS(on) (Ω) at VGS = 10 V • TrenchFET Power MOSFET 0.0065 ID (A) Configuration RoHS • Package with Low Thermal Resistance
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SQD50N03-06P
AEC-Q101
O-252
SQD50N03-06P-GE3
18-Jul-08
TA 68634
SQD50N03-06P
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TA 68634
Abstract: No abstract text available
Text: SQD50N03-06P Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free 30 RDS(on) (Ω) at VGS = 10 V • TrenchFET Power MOSFET 0.0065 ID (A) Configuration RoHS • Package with Low Thermal Resistance
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SQD50N03-06P
AEC-Q101
O-252
O-252
SQD50N03-06P-GE3
18-Jul-08
TA 68634
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SQD50N03-06P
Abstract: No abstract text available
Text: SQD50N03-06P Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedd
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SQD50N03-06P
2002/95/EC
AEC-Q101
O-252
SQD50N03-06P-GE3
18-Jul-08
SQD50N03-06P
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Untitled
Abstract: No abstract text available
Text: SQD50N03-06P Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedd
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SQD50N03-06P
2002/95/EC
AEC-Q101
O-252
O-252
SQD50N03-06P-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SQD50N03-06P www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested 30 RDS(on) () at VGS = 10 V 0.0060 RDS(on) () at VGS = 4.5 V 0.0085
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SQD50N03-06P
AEC-Q101
O-252
SQD50N03-06P-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: SQD50N03-06P www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested 30 RDS(on) () at VGS = 10 V 0.0060 RDS(on) () at VGS = 4.5 V 0.0085
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Original
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PDF
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SQD50N03-06P
AEC-Q101
O-252
SQD50N03-06P-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SQD50N03-06P www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested 30 RDS(on) () at VGS = 10 V 0.0060 RDS(on) () at VGS = 4.5 V 0.0085
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Original
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PDF
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SQD50N03-06P
AEC-Q101
O-252
O-252
SQD50N03-06P-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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TA 68634
Abstract: No abstract text available
Text: SQD50N03-06P www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested 30 RDS(on) () at VGS = 10 V
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Original
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PDF
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SQD50N03-06P
AEC-Q101
2002/95/EC
O-252
O-252
SQD50N03-06P-GE3
11-Mar-11
TA 68634
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Untitled
Abstract: No abstract text available
Text: SQD50N03-06P www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested 30 RDS(on) () at VGS = 10 V
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Original
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PDF
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SQD50N03-06P
AEC-Q101
2002/95/EC
O-252
O-252
SQD50N03-06P-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: SQD50N03-06P www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested 30 RDS(on) () at VGS = 10 V 0.0060 RDS(on) () at VGS = 4.5 V 0.0085
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Original
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PDF
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SQD50N03-06P
AEC-Q101
O-252
O-252
SQD50N03-06P-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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jk 13001 E
Abstract: jk 13001 TA 68634 th 2167 jk 13001 h
Text: Ordering number : ENN6863 P-Channel Silicon MOSFET MCH3310 ISAfiYOl Ultrahigh-Speed Switching Applications Package Dimensions Features unit : mm 2167 • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. [MCH3310] 0 .1 5 . 0 .3 _ 311 o ïïtr -
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ENN6863
MCH3310
MCH3310]
jk 13001 E
jk 13001
TA 68634
th 2167
jk 13001 h
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E 78998
Abstract: No abstract text available
Text: Unshroudecfl Headers 2.54 x 2.54 mm 0.100 x 0.100 in. Centerlines BergStik II Headers BergCon® System Specifications Features Options • 1-Row: 1 through 36 total positions. 2-Row: 2 through 72 total positions. 3-Row: 9 through 108 total positions. ■ Advanced ground.
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TDDS411
E 78998
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DDR52
Abstract: DDR53 DDR50 TMP47E186M
Text: TO SHIBA TMP47E186/187 CMOS 4-Bit Microcontroller TMP47E186M /TMP47E187M TMP47E186M/187M is a high-speed, advanced single-chip 4-bit microcomputer with built-in ROM, RAM, E2PROM, SPI, I/O ports, a timer / counter. Model TMP47E186M TMP47E187M ROM RAM E2PROM
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TMP47E186/187
TMP47E186M
/TMP47E187M
TMP47E186M/187M
TMP47E187M
16x8-bit
OP16-P-300-1
TMP47P186M
TMP47P187M
DDR52
DDR53
DDR50
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