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    T53 DIODE Search Results

    T53 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    T53 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DIODE T53

    Abstract: transistor marking p3 SOD15 IGBT trr igbt high frequency 1200V STTA212S DI 380 Transistor TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE DIODE marking ED diode tURBOSWITCH
    Text: STTA212S  TURBOSWITCH  ”A”. ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINARY DATASHEET MAIN PRODUCTS CHARACTERISTICS IF AV 2A VRRM 1200V trr (typ) 65ns VF (max) 1.5V A K FEATURES AND BENEFITS SPECIFIC TO ”FREEWHEEL MODE” OPERATIONS : FREEWHEEL OR BOOSTER DIODE


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    PDF STTA212S DIODE T53 transistor marking p3 SOD15 IGBT trr igbt high frequency 1200V STTA212S DI 380 Transistor TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE DIODE marking ED diode tURBOSWITCH

    STTA212S

    Abstract: 15A POWER TRANSISTOR FOR SMPS
    Text: STTA212S TURBOSWITCH  ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 2A VRRM 1200V trr (typ) 65ns VF (max) 1.5V FEATURES AND BENEFITS SPECIFIC TO THE FOLLOWING OPERATIONS: SNUBBING OR CLAMPING, DEMAGHETIZATION AND RECTIFICATION ULTRA-FAST AND SOFT RECOVERY


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    PDF STTA212S STTA212S 15A POWER TRANSISTOR FOR SMPS

    STTA212S

    Abstract: No abstract text available
    Text: STTA212S  TURBOSWITCH  ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 2A VRRM 1200V trr (typ) 65ns VF (max) 1.5V FEATURES AND BENEFITS SPECIFIC TO THE FOLLOWING OPERATIONS: SNUBBING OR CLAMPING, DEMAGHETIZATION ANDRECTIFICATION ULTRA-FAST AND SOFT RECOVERY


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    PDF STTA212S STTA212S

    STTA212S

    Abstract: No abstract text available
    Text: STTA212S  TURBOSWITCH  ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 2A VRRM 1200V trr (typ) 65ns VF (max) 1.5V FEATURES AND BENEFITS SPECIFIC TO THE FOLLOWING OPERATIONS: SNUBBING OR CLAMPING, DEMAGHETIZATION ANDRECTIFICATION ULTRA-FAST AND SOFT RECOVERY


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    PDF STTA212S STTA212S

    DIODE T53

    Abstract: STTA212S SWITCHING DIODE 600V 2A
    Text: STTA212S TURBOSWITCH  "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 2A VRRM 1200V trr (typ) 65ns VF (max) 1.5V A K FEATURES AND BENEFITS SPECIFIC TO THE FOLLOWING OPERATIONS: SNUBBING OR CLAMPING, DEMAGHETIZATION AND RECTIFICATION


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    PDF STTA212S DIODE T53 STTA212S SWITCHING DIODE 600V 2A

    DIODE T53

    Abstract: STTA212S
    Text: STTA212S TURBOSWITCH  ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 2A VRRM 1200V trr (typ) 65ns VF (max) 1.5V FEATURES AND BENEFITS SPECIFIC TO THE FOLLOWING OPERATIONS: SNUBBING OR CLAMPING, DEMAGHETIZATION AND RECTIFICATION ULTRA-FAST AND SOFT RECOVERY


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    PDF STTA212S DIODE T53 STTA212S

    IXYS DIODE

    Abstract: mdd142 E72873 MDD142-06N1 MDD142-08N1 MDD142-12N1 MDD142-14N1 MDD142-16N1
    Text: • 4bflbSSb 0 0 0 1 7 1 2 T53 B I X Y □ IXYS Diode Modules MDD142 l-TAv = 2 x 165 A < < i VRRM= 600-1800 V Vbrm V Type Version 1 700 900 1300 1500 1700 1900 600 800 1200 1400 1600 1800* MDD142-06N1 MDD142-08N1 MDD142-12N1 MDD142-14N1 MDD142-16N1 MDD142-18N1


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    PDF G001712 MDD142 MDD142-06N1 MDD142-08N1 MDD142-12N1 MDD142-14N1 MDD142-16N1 MDD142-1BN1 IXYS DIODE E72873 MDD142-06N1 MDD142-08N1 MDD142-12N1 MDD142-14N1 MDD142-16N1

    schematic receiver parabola

    Abstract: MC44000 phillips circuits horizontal flyback 1XFH 50hz notch filter ic MC44001 MC44001P j 9227 DAC10 MC44011
    Text: MOTOROLA SC TELECOM bSE J> b3b?5S3 MOTOROLA Düf lbâ b? T53 • M O T S MC44001 SEMICONDUCTOR) TECHNICAL DATA Chroma 4 VIDEO PROCESSOR Product Preview Chroma 4 Multistandard Video Processor SILICON MONOLITHIC INTEGRATED CIRCUIT The MC44001 is a highly advanced circuit which performs most of the basic


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    PDF MC44001 MC44001, schematic receiver parabola MC44000 phillips circuits horizontal flyback 1XFH 50hz notch filter ic MC44001P j 9227 DAC10 MC44011

    MOSFET IRF 713

    Abstract: No abstract text available
    Text: • M302271 0054043 T53 ■ HAS IR F710/711/712/713 IRF71 OR/711R/712R/713R 33 HARRIS N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T 0 -22 0A B TOP VIEW • 1.7A and 2.0A, 350V - 400V • i"DS °n = 3.6fl and 5.0fl DRAIN (FLANGE)


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    PDF M302271 F710/711/712/713 IRF71 OR/711R/712R/713R IRF710, IRF711, IRF712, IRF713 IRF710R, IRF711R, MOSFET IRF 713

    74LS183

    Abstract: IC 74LS183
    Text: s G S-THOriSON 07E D | 7TE T53? Q O l b lb B S | W. 77 T54LS183 LOW POWER SGHOTTKY NTEGRATED Ik r s CIRCUITS 16 292 D t 74LS183 T ^ *5 -£ > 7 — DUAL CARRY-SAVE FULL ADDER DESCRIPTION The T54LS183/T74LS183 is a Dual Adder charac­ terising high-speed, high-fan-out Darlington out­


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    PDF 74LS183 T54LS183/T74LS183 T54LS T74LS 18tween 74LS183 IC 74LS183

    GC1700

    Abstract: GC1700A GC1701 GC1702 GC1703 GC1704 GC1705 GC1706 GC1713
    Text: .LORAL niCROIilAVE-FSI SIE D • 5SÖQ13D 0000455 OSO 60-VOLT SILICON TUNING VARACTORS DESCRIPTION The GC1700 series tuning varactors are silicon abrupt junction devices. They offer the highest Q and lowest resistance available in 60 volt tuning diodes. A unique silicon dioxide passivation process assures


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    PDF 0Q00455 GC1700 SSaQ13n GC1700A GC1701 GC1702 GC1703 GC1704 GC1705 GC1706 GC1713

    Untitled

    Abstract: No abstract text available
    Text: SEP8506 GaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package . 50“ nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger


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    PDF SEP8506 SDP8406 SDP8106 SDP8000/8600 SEP8506

    Telefunken u 237

    Abstract: Telefunken u 267 U237B U237 U 237 BG Telefunken u 257 U237BG U257BG U247B U257B
    Text: TELEFUNKEN ELECTRONIC 61C D T T IU IF W K IM electronic CfMtwe Technologies • fi^EDQ^b 0004D55 3 ■ AL6G U 237 BG •U 247 BG U 257 BG •U 267 BG ' T - s a w s - o Monolithic Integrated Circuits App1lcatlon;To drive LED-displays with 5 or 10 diodes Features:


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    PDF T-13-01 U237BGU247BG U257BGU267BG 10LED 0Q0403Q T-S3-I3-07 Driverfor20LED Telefunken u 237 Telefunken u 267 U237B U237 U 237 BG Telefunken u 257 U237BG U257BG U247B U257B

    Untitled

    Abstract: No abstract text available
    Text: AN7283S AN7283S FM Front-end IC for Car Radio • Description The AN7283S is a monolithic integrated circuit designed for car radio, supporting DTSs other than RF amp. It has buffer output of local oscillation frequency and also incorporates 2 Loop-AGC and PIN diode driver for antenna


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    PDF AN7283S AN7283S AN7280S 122dB 32fi52

    AN7283S

    Abstract: an7283 3FW transistor G1103 lkt 108 40A-3 AN7280S F37A adx 312 SFE107MS3
    Text: A N 7283S AN7283S FM Front-end IC for Car Radio Unit : m m • Description The AN7283S is a monolithic integrated circuit designed for car radio, supporting DTSs other than RF amp. It has buffer output o f local oscillation frequency and also incorporates 2 Loop-AGC and PIN diode driver for antenna


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    PDF AN7283S AN7283S AN7280S 122dB^ 20-Lead an7283 3FW transistor G1103 lkt 108 40A-3 AN7280S F37A adx 312 SFE107MS3

    AN7283S

    Abstract: 40A-3 AN7280S F37A G1103 SFE107MS3
    Text: A N 7283S AN7283S FM Front-end IC for Car Radio Unit : m m • Description The AN7283S is a monolithic integrated circuit designed for car radio, supporting DTSs other than RF amp. It has buffer output of local oscillation frequency and also incorporates 2 Loop-AGC and PIN diode driver for antenna


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    PDF AN7283S AN7283S AN7280S 122dB^ 20-Lead 40A-3 AN7280S F37A G1103 SFE107MS3

    transistor marking 2A H

    Abstract: STTA212S
    Text: STTA212S TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS If av 2A V rrm 1200V (typ) 65ns (max) 1.5V trr Vf FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPEFIATIONS: SNUBBING OR CLAMPING, DEMAGHETIZATION AND RECTIFICATION


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    PDF STTA212S transistor marking 2A H STTA212S

    T53 diode

    Abstract: No abstract text available
    Text: KBU6005 Thru KBU610 > 6 AMP SILICON BRIDGE RECTIFIER • FEATURES H Outline Drawing • Ideal for printed circuit board • Surge overload rating to 250 Amperes peak • Reliable low cost construction utilizing molded plastic technique • UL recognized: File #E106441


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    PDF KBU6005 KBU610 E106441 KBU601 5E357TE T53 diode

    A/smd diode t53

    Abstract: No abstract text available
    Text: PD -9.1668A International I R Rectifier IRG4ZC70UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Surface Mountable UltraFast CoPack IGBT • UltraFast IGBT optimized for high switching frequencies • IGBT co-packaged with HEXFREDa ultrafast,


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    PDF IRG4ZC70UD SMD-10 A/smd diode t53

    cm15ld-12h

    Abstract: CM20LD-12H CM10LD-12H CM15LD12 cm10ld CM15LD CM10MD-24H cm20ld CM5MD-24H cm25md-24h
    Text: m/UEREX Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 Powerex CIB IGBT Modules are new power integrated circuit products designed for use in motor


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    PDF BP107, OLD-12H, CM15LD-12H, CM20LD-12H CM10MD-12H, CM15MD-12H, CM20MD-12H, CM5MD-24H, CM10MD-24H CM30MD-12H, cm15ld-12h CM20LD-12H CM10LD-12H CM15LD12 cm10ld CM15LD CM10MD-24H cm20ld CM5MD-24H cm25md-24h

    MPSL51

    Abstract: 1N914 MPS-L51
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA A m plifier Transistor MPSL51 PNP Silicon COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO -100 Vdc Collector-Base Voltage VCBO -100 Vdc Emitter-Base Voltage vebo ^ .0 Vdc Rating ic


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    PDF MPSL51 O-226AA) 1N914 b3b7H55 MPSL51 1N914 MPS-L51

    Mikroelektronik Heft

    Abstract: information applikation mikroelektronik "Mikroelektronik" Heft "halbleiterwerk frankfurt" mikroelektronik applikation A290D applikation heft mikroelektronik DDR mikroelektronik Heft 12 Mikroelektronik Information Applikation
    Text: INFORMATION MIKROELEKTRONIK APPLIKATION INTEGRIERTER PLLSTEREO-DEKODER 220n A 290 n v /50 mA m m K m Information-Applikation Aufbau, Funktionsweise und Anwendung des integrierten PLL-StereodekoderSchaltkreises A 290 D Mikroelektronik Heft 3 veb Halbleiterwerk frankfurt/oder


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    PDF 47/uF Mikroelektronik Heft information applikation mikroelektronik "Mikroelektronik" Heft "halbleiterwerk frankfurt" mikroelektronik applikation A290D applikation heft mikroelektronik DDR mikroelektronik Heft 12 Mikroelektronik Information Applikation

    Untitled

    Abstract: No abstract text available
    Text: SGP13N60UFD IGBT CO-PAK FEATURES TO-220 p * High Speed Switching * Low Saturation Volatge : VCE sat = 2.2 V (at lc=6.5A) * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 37nS (Typ) APPLICATIONS ?C * AC & DC Motor controls * General Purpose Inverters


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    PDF SGP13N60UFD O-220

    BYV2100

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifier BYV2100 FEATURES DESCRIPTION • Glass passivated Rugged glass SOD57 package, using a high temperature alloyed construction. • High maximum operating temperature


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    PDF BYV2100 BYV2100