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    T3123 Price and Stock

    Lumissil Microsystems IS32LT3123-ZLA3-TR

    IC LED DRV LIN PWM 18MA 24ETSSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IS32LT3123-ZLA3-TR Digi-Reel 7,495 1
    • 1 $3.01
    • 10 $1.91
    • 100 $1.2966
    • 1000 $0.95614
    • 10000 $0.95614
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    IS32LT3123-ZLA3-TR Cut Tape 7,495 1
    • 1 $3.01
    • 10 $1.91
    • 100 $1.2966
    • 1000 $0.95614
    • 10000 $0.95614
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    IS32LT3123-ZLA3-TR Reel 5,000 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.875
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    Avnet Americas IS32LT3123-ZLA3-TR 26 Weeks 2,500
    • 1 $1.02
    • 10 $1.02
    • 100 $0.86
    • 1000 $0.86
    • 10000 $0.86
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    Mouser Electronics IS32LT3123-ZLA3-TR
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $0.875
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    EBV Elektronik IS32LT3123-ZLA3-TR 27 Weeks 2,500
    • 1 -
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    Lumissil Microsystems IS32LT3123-ZLA3-EB

    EVAL BOARD FOR IS32LT3123
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IS32LT3123-ZLA3-EB Box 4 1
    • 1 $55.95
    • 10 $55.95
    • 100 $55.95
    • 1000 $55.95
    • 10000 $55.95
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    Mouser Electronics IS32LT3123-ZLA3-EB
    • 1 $109.38
    • 10 $109.38
    • 100 $109.38
    • 1000 $109.38
    • 10000 $109.38
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    Pentair Equipment Protection - Hoffman AST3123R

    SPLITTER TROUGH 3FT 3W 125 A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AST3123R Bulk 1
    • 1 $228.93
    • 10 $228.93
    • 100 $228.93
    • 1000 $228.93
    • 10000 $228.93
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    Fix Supply ZUSA-HT-3123

    FDA PVC Tubing - 3/16" ID x 7/16
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ZUSA-HT-3123 Bulk 1
    • 1 $23.93
    • 10 $23.93
    • 100 $23.93
    • 1000 $23.93
    • 10000 $23.93
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    KOA Speer Electronics Inc RN73H1JTTD3123D100

    Thin Film Resistors - SMD 312kOhm,0603,0.5%,10 ppm,100mW,75V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics RN73H1JTTD3123D100
    • 1 $0.21
    • 10 $0.157
    • 100 $0.11
    • 1000 $0.071
    • 10000 $0.053
    		Get Quote
    Find more T3123 price and stock on Findchips.com

    T3123 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    T3123 Unknown TRIANGULAR TYPE Scan PDF
    T3123P Jiann Wa Electronics Triangular Type LED Lamp Scan PDF

    T3123 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR SE 135

    Abstract: No abstract text available
    Text: AVANTEK INC 5DE D • 0A V A N T E K OODfc^SO □ AT-01610 Up to 4 GHz General PurposeSilicon Bipolar Transistor Avantek 100 mil Package Features • 22.0 dBm typical Pi dB at 2.0 GHz • 9.5 d B typical G i dB at 2.0 G Hz • High Galn-Bandw idth Product: 7.0 GHz typical fr


    OCR Scan     		PDF AT-01610 TRANSISTOR SE 135

    T2333

    Abstract: S2136 S4236 p2561 T7314 T5323 S7136 T1133 T3122 T5122
    Text: m m m m m TRIANGULAR TYPE LED LAMP -•¿mi LENS COLOR TRIANGULAR TYPE Color Diffused TYP 1 3x4.6m/m As sample in P25-44 3x4.6m/m 4.0 ttJO MAX ax, -wo _ 5 174 M AX_ CATHOOi ^^55 . ^ ,3 ^ >| CMHQM moot -I2 W « 2 0.6 1.2 1.4 1.2 2.0 1.2 1.6 T1133 T4133


    OCR Scan     		PDF P25-44 T1123 T2123 T3123 T3123P T4123 T5123 T7123 T1323 T2323 T2333 S2136 S4236 p2561 T7314 T5323 S7136 T1133 T3122 T5122

    Untitled

    Abstract: No abstract text available
    Text: 35E D • 823b32Q QGlb'ìbS T « S I P NPN Silicon RF Transistor BFQ 81 SIEMENS/ SPCLi SEMICONDS _ • For low-noise amplifiers up to 2 GHz and broadband analog and digital applications in telecommunications systems at collector currents from 0.5 to 20 mA.


    OCR Scan     		PDF 823b32Q 62702-F1049 OT-23

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE OLE D LLS3T31 ooman MAINTENANCE TYPE 4 LAE4000Q for new design use LAE4001R r-i)-a3 M IC R O W A V E LIN EA R PO W ER T R A N S IS T O R NPN silicon transistor intended for use in military and professional applications. It operates in c.w.


    OCR Scan     		PDF LLS3T31 LAE4000Q LAE4001R) OT-100 OT-100.

    2N5109 SGS

    Abstract: 2n5109 Max17550 transistor Z2
    Text: 3QE » • 7^2=1237 Q 0 312E5 T ■ ' T i 2 \*Z'2 > r = 7 S G S -T H O M S O N ^ 7 # ^ a œ @ |L i O r a ô [ M D O i 2N5109 Y T ^ s - thom son EPITAXIAL PLANAR NPN C A T V U L T R A -L IN E A R HIGH G AIN T R A N ­ SISTO R The 2N5109 is a multi-emitter silicon planar epitaxial


    OCR Scan     		PDF 312E5 2N5109 2N5109 T-31-23 200MHz 2N5109 SGS Max17550 transistor Z2

    2N6839

    Abstract: No abstract text available
    Text: HEWLETT-PACKARD i CMPNTS 2GE D □ 4447534 0G0SS3S 3 E3 *31 H E W L E T T PACKARD 1:rJl 3 1 -2 -3 T'3 3-Ö S' L inear P ow er Transistors HXTR-3002 Chip Technical Data HXTR-3102, TX and TXV 2N6839 HXTR-3104, TX


    OCR Scan     		PDF HXTR-3002 HXTR-3102, 2N6839 HXTR-3104, 1SalE12i MIL-S-19500, MIL-STD-750 2N6839

    BFY55

    Abstract: transistor f 421 1F t transistor Silicon Epitaxial Planar Transistor philips
    Text: BFY55 PHILIPS INTERNATIONAL SbE D Bi 711üflSb 00422^2 043 I IPHIN T -3 h 2 3 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in TO-39 metal case with the collector connected to the case. It is primarily intended for use in high frequency and very high frequency oscillators and amplifiers as well as for output stages


    OCR Scan     		PDF BFY55 7110fl5b T-3J-23 T-31-23 711DaSb 0DM53GB BFY55 transistor f 421 1F t transistor Silicon Epitaxial Planar Transistor philips

    transistor bfr96

    Abstract: SL 100 NPN Transistor BFR96 BFR96 LOW POWER TRANSISTOR transistor 936 M8B916 BFR96 pins resistance BFR96 TRANSISTOR BFQ32 a 933 transistor
    Text: Philips Sem iconductors Product specification ^ NPN 5 GHz wideband transistor PHILIPS DESCRIPTION 711DÔ2t> 0 0 4 5 7 7 b Sfc.E D INTERNATIONAL BFR96 lfl7 « P H I N PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF wideband amplifiers such as


    OCR Scan     		PDF BFR96 004577b ON4487) BFQ32. BFR96/02 0D457A2 00MS763 transistor bfr96 SL 100 NPN Transistor BFR96 BFR96 LOW POWER TRANSISTOR transistor 936 M8B916 BFR96 pins resistance BFR96 TRANSISTOR BFQ32 a 933 transistor

    Untitled

    Abstract: No abstract text available
    Text: 3GE D • 7^237 0D31DÔ1 1 ■ rz 7 sgs-thom son ^ 7 # bsyss o « [im i@ T M « § BSY56 S G S-THOMSON GENERAL PURPOSE AMPLIFIERS DESCRIPTION The BSY55 and BSY56 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, inten­ ded for use in high performance amplifier, oscillator


    OCR Scan     		PDF 0D31DÃ BSY56 BSY55 BSY56 BSY55 ----T-31-23 BSY55-BSY56

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE • ObE D ■ bbSBIBl O D m T S B b ■ DEVELOPMENT DATA This data sheet contains advance information and specifications are subject to change without notice. J ■ - _ 11 LTE4002S - -r — - ~ •


    OCR Scan     		PDF LTE4002S

    1HT251

    Abstract: 2T203 kt117 1T308 2T355A 2T312 IT308B K1HT251 kt117b 2T313
    Text: WmmËÊÊm W h A iW f W * i r*ïS >*••> ro s ît. ;<W«a 7 mm m$m 15ÎÏ3 Sktófefc?¿feS 11181 immm SI f ' ■ ' ' ' : m S ËÊB B S M M CnPABOHHMK nonynpoBQQHHKOBbiE nPHBOPbl TPAH3MCTOPbl MAflOI/ì MOLUHOCTM n O f l PEA A K L4H EPÌ A . B rO flO M E A O B A


    OCR Scan     		PDF FojO33 KT357 KT358 KT361 KT363 KT364-2 KT366 KT368 KT369 KT369-1 1HT251 2T203 kt117 1T308 2T355A 2T312 IT308B K1HT251 kt117b 2T313

    transistor f423

    Abstract: F423 Philips F423 F423 transistor BF423 philips BF423 BF420 BF421 BF422 F-423
    Text: BF421 _ i V _ P HILI P S I N T E R N A T I O N A L 5bE D • ¿ F423 7 1 1 0 0 2 b 0 0 4 21 b 2 42S « P H I N SILICON EPITAXIAL TRANSISTORS T -J /-2 3 P-N-P transistors in plastic TO-92 envelope primarily intended for class-B video output stages in


    OCR Scan     		PDF BF421 711002b 00421b2 BF420 BF422. BF421 BF423 7Z77434 transistor f423 F423 Philips F423 F423 transistor BF423 philips BF422 F-423

    PSD3-20

    Abstract: PSD5-28
    Text: • ■ ■ Uliw Split Bobbin Power Transformers 115V and 115/230V 50/60Hz T31 and T32 T31 Series:Single 115V Primary T32 SeriesiDual 115/230 V Primary Single Dual Secondary Connections Primary Primary Size Parallel Series P/N P/N VA VAC Arms VAC Arms T31-1-10


    OCR Scan     		PDF 115/230V 50/60Hz T31-1-10 T31-2-10 T31-6-10 T31-12-10 T32-1-10 T32-2-10 T32-6-10 T32-12-10 PSD3-20 PSD5-28

    MRF5109HX

    Abstract: MRF510
    Text: nOTOROLA SC X S TR S /R 4bE F D • b3b72S4 00R 2*î21 5 ■ MOTI» ^ 3 /- « 2 3 MOTOROLA SEMICONDUCTOR I TECHNICAL DATA MRF5109HX,HXV DM0 u/un NPN Silicon High Frequency Transistor Discrete Military Operation . .designed specifically for broadband applications requiring good linearity. Usable as a


    OCR Scan     		PDF b3b72S4 MRF5109HX MRF510

    HXTR-3102

    Abstract: 3104j HXTR-3104 HXTR-3002 3002 ic equivalent 3002 TRANSISTOR equivalent 2N6839 high power transistor s-parameters HXTR-3102TXV Silicon Bipolar Transistor Hewlett-Packard
    Text: HEWLETT-PACKARD i C MP N T S 50E D D 4MM75Ö4 0D0SS3S 3 Q HEW LETT ¿ rJ l P A C K A R D T - 3 1 -3 -3 T ' 3 3 -0 5 - L in ea r P o w e r T ran sistors HXTR-3002 C hip Technical D ata HXTR-3102, TX and TXV


    OCR Scan     		PDF 4MM75Ã HXTR-3002 HXTR-3102, 2N6839 HXTR-3104, HXTR-3002 Bondin15 IS21F MIL-S-19500, HXTR-3102 3104j HXTR-3104 3002 ic equivalent 3002 TRANSISTOR equivalent 2N6839 high power transistor s-parameters HXTR-3102TXV Silicon Bipolar Transistor Hewlett-Packard

    159MHz

    Abstract: BFR36
    Text: 3QE » • 7^237 QDaD'îSS 1 ■ £ÿj SGS-THOMSON 'Tv £\-Z2> 0 [F il© [i[L [i© im « l_ B F R 3 6 S G S-THOMSON CATV ULTRA-LINEAR HIGH GAIN TRANSISTOR DESCRIPTION T h e B F R 36 is a multi-emitter silicon planar epitaxial N P N transistor in Jedec T O -3 9 m etal case. It is desi­


    OCR Scan     		PDF T-31-23 T--31--23 159MHz 57MHz 159MHz BFR36

    bf433

    Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ baw 92 HP11606A RF NPN POWER TRANSISTOR 2 WATT 2 GHZ 110T MRF5812 SF-11N transistor 81 110 w 63 MRF68
    Text: MOTOROLA SC XSTR S/R F MbE » • b3b?ES4 OQTSGS^ *1 I noTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Th« RF Line NPN Silico n RF Low Pow er Transistor 'European Part Number lc - 200 mA SURFACE MOUNT HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed for high current, low power amplifiers up to 2 GHz.


    OCR Scan     		PDF MRF681 bf433 RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ baw 92 HP11606A RF NPN POWER TRANSISTOR 2 WATT 2 GHZ 110T MRF5812 SF-11N transistor 81 110 w 63 MRF68

    Untitled

    Abstract: No abstract text available
    Text: AVANTEK INC 2DE D avantek • AT-01635 Up to 4 GHz General Purpose Silicon Bipolar Transistor Avantek 35 micro-X Package Features • • • • ll'mibb DGQti4S2 H 22.0 dBm typical Pi ¿b at 2.0 GHz 9.5 dB typical Gi dB at 2.0 GHz High Gain-Bandwldth Product: 7.0 GHz typical


    OCR Scan     		PDF AT-01635 ion202 310-371-8717or310-37l-847a

    Untitled

    Abstract: No abstract text available
    Text: 4tE J> m t3t?2SM 0 0 ^ 7 1 1 •MOTbT-31 MOTOROLA SC XSTRS/R F MOTOROLA SEMICONDUCTOR! TECHNICAL DATA DM0 2C5109HV Chip NPN Silicon High-Frequency Transistor m ini Discrete Military Operation . .designed specifically lor broadband applications requiring good linearity. Useable as a


    OCR Scan     		PDF MOTbT-31 2C5109HV

    2n5401 toshiba

    Abstract: No abstract text available
    Text: 45E T> m TDTTESG GG17773 S TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS TO SH IB A IT0S4 2N5401 (D I S C R E T E / O P T O ) FOR GENERAL PURPOSE USE HIGH VOLTAGE AMPLIFIER APPLICATIONS. . High Collector Breakdown Voltage : v CBO= - 160V, V c e o = -150V


    OCR Scan     		PDF GG17773 2N5401 -150V -50nA -50mA, -120V 10nlA, -10mA, 2n5401 toshiba

    Untitled

    Abstract: No abstract text available
    Text: jut. • TTSTSB? Q Q 3 1 Q 13 b ■ -2 3 S G S -T H O M S O N ILiCTIEMQtgS S G B F Y 64 S- TH O M SO N HIGH-CURRENT GENERAL PURPOSE TRANSISTOR D ESC RIPTIO N The BFX64 is a silicon planar epitaxial PNP tran­ sistor in Jedec TO-39 metal case. It is designed for


    OCR Scan     		PDF BFX64 D031Q1S T-31-23 BFY64 DQ31Dlb

    BFG96

    Abstract: BFG32 MSB037 3H2 philips MBB352
    Text: Product specification Philips Semiconductors 7 ^ 3 / - Z 3 PNP 5 GHz wideband transistor philips SbE D international BFG32 711Dfi2b D04SD3S ETfl • P H I N PINNING D ESCRIPTION 1 P N P transistor in a four-lead dual-emitter plastic SOT103 envelope. It is designed for application in


    OCR Scan     		PDF BFG32 OT103 BFG96. D04SD3S MSB037 OT103. BFG96 BFG32 3H2 philips MBB352

    Untitled

    Abstract: No abstract text available
    Text: 32E D • 02 3b 32G 001bñ43 7 ■ NPN Silicon High-Voltage Transistors SIEM EN S/ SPCL-, SIP BFN16 BFN18 T - 3 Í- 2 3 SEMICONDS . • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage


    OCR Scan     		PDF BFN16 BFN18 Q62702-F694 Q62702-F696 Q62702-F885 Q62702-F1056 T-31-23 fl23t

    Untitled

    Abstract: No abstract text available
    Text: 3SE D • Ö23b320 QQ1L7S1 S MKSIP y -2 1 - 3 3 NPN Silicon High Voltage Transistor BF 622 _ SIEMENS/ SPCLi S E M I C O N D S _ • Suitable for video output stages in TV sets • High breakdown voltage • Low collector-emitter saturation voltage


    OCR Scan     		PDF 23b320 BF622 Q62702-F568 Q62702-F1052