MDB41
Abstract: SP8K10SFD5 M24-P SP8K10 MDA48 a2840 C-829 J12D1 max1993 MDB48
Text: 5 4 3 2 1 TP6 TP_22mil_SM_top DNI DNI TP_22mil_SM_top TP3 DNI TP4 TP_22mil_SM_top DNI TP_22mil_SM_top TP5 DNI C AF26 AE26 AC25 AB25 AC27 AB27 AC26 AB26 Y25 W25 Y27 W27 Y26 W26 U25 T25 U27 T27 U26 T26 P25 N25 P27 N27 P26 N26 L25 K25 L27 K27 L26 K26 PCIE_TX0P
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RXP10
RXN10
RXP11
RXN11
RXP12
RXN12
RXP13
RXN13
RXP14
RXN14
MDB41
SP8K10SFD5
M24-P
SP8K10
MDA48
a2840
C-829
J12D1
max1993
MDB48
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t25 4 J9
Abstract: t25 4 j5 T25 4 E8 t25 4 F6 EPF10K200S T25 4 E5 t35 4 c8 af14 ba43 bf44
Text: EPF10K200S Device Pin-Outs ver. 1.0 Pin Name 1 240-Pin RQFP 356-Pin FineLine BGA 484-Pin FineLine BGA 599-Pin PGA 600-Pin BGA 672-Pin FineLine BGA MSEL0 (2) MSEL1 (2) nSTATUS (2) nCONFIG (2) DCLK (2) CONF_DONE (2) INIT_DONE (3) nCE (2) nCEO (2) nWS (4) nRS (4)
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EPF10K200S
240-Pin
356-Pin
484-Pin
599-Pin
600-Pin
672-Pin
t25 4 J9
t25 4 j5
T25 4 E8
t25 4 F6
T25 4 E5
t35 4 c8
af14
ba43
bf44
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t25 4 J9
Abstract: be37 AR-17 BA41 AA43 t25 4 L9 BA43 t25 4 F6 t25 4 H9 BE43
Text: EPF10K200S Device Pin-Outs ver. 1.1 Pin Name 1 240-Pin RQFP 356-Pin FineLine BGA 484-Pin FineLine BGA 599-Pin PGA 600-Pin BGA 672-Pin FineLine BGA MSEL0 (2) MSEL1 (2) nSTATUS (2) nCONFIG (2) DCLK (2) CONF_DONE (2) INIT_DONE (3) nCE (2) nCEO (2) nWS (4) nRS (4)
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EPF10K200S
240-Pin
356-Pin
484-Pin
599-Pin
600-Pin
672-Pin
t25 4 J9
be37
AR-17
BA41
AA43
t25 4 L9
BA43
t25 4 F6
t25 4 H9
BE43
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AF14
Abstract: AC22 AE23 EPF10K200S AE10-AE11 AE20-AE21 AJ43
Text: EPF10K200S Device Pin-Outs ver. 1.0 Pin Name 1 240-Pin RQFP 356-Pin FineLine BGA 484-Pin FineLine BGA 599-Pin PGA 600-Pin BGA 672-Pin FineLine BGA MSEL0 (2) MSEL1 (2) nSTATUS (2) nCONFIG (2) DCLK (2) CONF_DONE (2) INIT_DONE (3) nCE (2) nCEO (2) nWS (4) nRS (4)
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EPF10K200S
240-Pin
356-Pin
484-Pin
599-Pin
600-Pin
672-Pin
AF14
AC22
AE23
AE10-AE11
AE20-AE21
AJ43
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t25 4 e9
Abstract: AH36 ag33 diode diode t25 4 F6 AP4 89 AE23 Ah-36 diode t25 4 L5 af14 AE13
Text: EPF10K50 Device Pin-Outs ver. 1.0 Pin Name 1 240-Pin PQFP/RQFP MSEL0 (2) MSEL1 (2) nSTATUS (2) nCONFIG (2) DCLK (2) CONF_DONE (2) INIT_DONE (3) nCE (2) nCEO (2) nWS (4) nRS (4) nCS (4) CS (4) RDYnBSY (4) CLKUSR (4) DATA7 (4) DATA6 (4) DATA5 (4) DATA4 (4)
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EPF10K50
240-Pin
t25 4 e9
AH36
ag33 diode
diode t25 4 F6
AP4 89
AE23
Ah-36
diode t25 4 L5
af14
AE13
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UT1553
Abstract: Mil-STD-1773 RTMP-10
Text: UT1553 Remote Terminal Multi-Protocol FEATURES INTRODUCTION p Complete MIL-STD-1553 Remote Terminal Interface p Mode selectable to comply with either MIL-STD- The UT1553 RTMP figures 1 and 4 is a monolithic, CMOS, VLSI integrated circuit that meets all requirements
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UT1553
MIL-STD-1553
MIL-STD1553A
MIL-STD-1553B
MIL-STD-1553A
RTMP-40
Mil-STD-1773
RTMP-10
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rta2
Abstract: No abstract text available
Text: UT1553 Remote Terminal Multi-Protocol FEATURES INTRODUCTION ❐ Complete VLSI MIL-STD-1553 Remote Terminal The UT1553 RTMP figures 1 and 4 is a monolithic, CMOS, VLSI integrated circuit that meets all requirements for a dual-redundant MIL-STD-1553 Remote Terminal
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UT1553
MIL-STD-1553
MIL-STD1553A
MIL-STD-1553B
RTMP-40
rta2
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UT1553B
Abstract: 1553b rti CHA Series mil-std-1553b SPECIFICATION 1553B UT1553 RTMP rta2
Text: UT1553 Remote Terminal Multi-Protocol FEATURES INTRODUCTION ❐ Complete VLSI MIL-STD-1553 Remote Terminal The UT1553 RTMP figures 1 and 4 is a monolithic, CMOS, VLSI integrated circuit that meets all requirements for a dual-redundant MIL-STD-1553 Remote Terminal
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UT1553
MIL-STD-1553
MILSTD-1553A
MIL-STD-1553B
84pin
UT1553B
1553b rti
CHA Series
mil-std-1553b SPECIFICATION
1553B
RTMP
rta2
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CONDITIONS31
Abstract: B1274 1553B UT1553 what about 1553 bus
Text: UT1553 Remote Terminal Multi-Protocol FEATURES INTRODUCTION ❐ Complete VLSI MIL-STD-1553 Remote Terminal The UT1553 RTMP figures 1 and 4 is a monolithic, CMOS, VLSI integrated circuit that meets all requirements for a dual-redundant MIL-STD-1553 Remote Terminal
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UT1553
MIL-STD-1553
MILSTD-1553A
MIL-STD-1553B
MIL-M-38510.
36-Lead
Packaging-10
CONDITIONS31
B1274
1553B
what about 1553 bus
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AA43
Abstract: AJ43 BE43 AR-23 BF44 bg47 AR33 t35 4 c8 EPF10K200E AY42
Text: EPF10K200E Device Pin-Outs ver. 1.0 Pin Name 1 MSEL0 (2) MSEL1 (2) nSTATUS (2) nCONFIG (2) DCLK (2) CONF_DONE (2) INIT_DONE (3) nCE (2) nCEO (2) nWS (4) nRS (4) nCS (4) CS (4) RDYnBUSY (4) CLKUSR (4) DATA7 (4) DATA6 (4) DATA5 (4) DATA4 (4) DATA3 (4) DATA2 (4)
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EPF10K200E
599-Pin
AA43
AJ43
BE43
AR-23
BF44
bg47
AR33
t35 4 c8
AY42
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T25 4 F8
Abstract: t25 4 k8 MB86R01EB01-COR MB86R MB86R01EB01-CORE t25 4 h8 C49-C54 R101 R104 R106
Text: 5 9 4 3 2 1 C_IDLLRST D_MDT[31.0] 3.3VC R85 0 N.M 3.3VC R86 10k D_MA[12.0] U1B AC21 D R93 R95 10k AD22 0 N.M DGND AE22 1.8VD 1.8VD R100 200 1% P23 R102 200 1% N23 DGND R91 10k 1% AC22 C17 K25 VREF1 0.1/1005 V25 VREF0 R113 10k 1% DGND C19 C20 0.1/1005 0.1/1005
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BLM18PG300SN1B
EDE5116AHSE
MB86R01EB01-CORE
E231E-D001
T25 4 F8
t25 4 k8
MB86R01EB01-COR
MB86R
t25 4 h8
C49-C54
R101
R104
R106
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0704M
Abstract: 01FEB
Text: MSP Vishay Sfernice Precision Surface Mount Resistors Wirewound or Metal Film Technologies FEATURES • Approved according CECC 40402-801 wirewound Wide range of ohmic values (0.04 to 1 M) Low temperature coefficient (± 25 ppm/°C available)
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2002/95/EC
18-Jul-08
0704M
01FEB
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Untitled
Abstract: No abstract text available
Text: 12 13 10 SURFACE FOR EM-91716-0101 CCT •COLOUR STRIPE se e n o te 3 QO V Q 17 - /I7 R I7 D P P 1 uuuuuuu T25 3.33 2.50 REF. PITCH SHIPPING ARRANG EM EN T I H H H H H H H u "A" “B" 3 4 5.0 7.5 9.875 12.375 5 10.0 14.875 6 12.5 17.375 7 15.0 19.875 8 17.5
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EM-91716-0101
PS-99020-0S
SD-91716-001_
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t25 4 e9
Abstract: 12v/DIODE t25 4 e9
Text: aw m SAKJ *F32>-¿3 V^HDTMl DQ0DSÔ7 S 3SE P SANKEN ELECTRIC CO LTD j*kV Silicon PIMP Epitaxial Planar Application Example : • Outline Drawing General Purpose 2—‘ -•M T-10 T03P • Test Circuit . . Symbol V cbo V
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--70V
--100max
--50min
40min
20typ
--12V,
MT-100
MT-200
FM100
45ttt<
t25 4 e9
12v/DIODE t25 4 e9
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t25 4 e9
Abstract: Sanken Transistor 12v/DIODE t25 4 e9
Text: S AN K E N ELECTRIC CO LT» 3SE D H T'H G T M l Gü00ti71 S ^ SAKJ "P 3 5 - ß Silicon NPN Triple Diffused Planar ☆High Voltage Switching Transistor A p p lic a tio n E x a m p le : • Outline Drawing 5 . •••••'■••■FM100 • Test C ircu it. . .
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00ti71
FM100
2SC4303
2SC4303A
100max
800min
MT-100
MT-200
t25 4 e9
Sanken Transistor
12v/DIODE t25 4 e9
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t25 4 e9
Abstract: T25 4 h5
Text: GEN. sr. I B S . C . 2 0 2 2 6 1 . 0 0 1 . 0 1 INT. ST. 01 02 03 1 04 1 09 0« 1 07 1 06 1 00 SO 1 <0 70 1 «0 1 »0 |st|70|»2|73[>^74|ai!><lS3|*4|*l Î T 3 T ! * « DESCRIPTION _Jl_ U - i J T 1 « n u s n é
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B111-HM2P87PC8111-HM2PB7PK8111-HM2P87EVEL
HM2P87P
8111-ftMHATOHE
t25 4 e9
T25 4 h5
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t25 4 e9
Abstract: 2SC1986 2SC198 sanken 1986 sanken 2SC
Text: SANKEN ELECTRIC CO LT» 3SE ]> m 7 ^ 0 7 4 1 D0Ü0fal7jrjBS^KJj£33*-\l S ilic o n N P N T rip le D iffu se d M e s a ☆ Complement to types 2 S A 7 7 0 and 2 S A 7 7 1 • Outline Drawing 1 Application Example : General and Industrial Purpose • ■■•MT-25 T0220
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MT-25
T0220)
60min
40min
10typ
80min
MT-100
MT-200
t25 4 e9
2SC1986
2SC198
sanken 1986
sanken 2SC
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2sc2316
Abstract: super beta transistor
Text: m 33E » TTTOTMl ODDObEl 1 ESSSAKJ T 3 3 ~ H Silicon NPN Triple Diffused Mesa ☆Super Beta Transistor Application Example : • Outline Drawing 1 General Purpose E le c tric a l C h a r a c te ris tic s Conditions Symbol A b s o lu te M a x im u m R a tin g s
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100max
60min
500min
30typ
80miri
2SC2316
10Omax
per20)
MT-100
MT-200
super beta transistor
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2MB1100NC-120
Abstract: 2MBI1OONC-120 2mb1100 2mb1100n tl 271 2MBI100NC-120 IT0-22
Text: S d llG B T ^ ^ IL — JU N '> u - "j + 's V W r Ni^lJ—X j 2MBI100NC-120 X j 1200V / 100A/ 2 flilifl : Features High Speed Switching > *? • J± 8 *R j Voltage Drive • te - r > ? ? ? Low Inductance Module Structure : Applications • i — ^ IE W jE H >'< — ?
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2MBI1OONC-120
200V/100A/
J94/J94)
2MB1100NC-120
2MBI1OONC-120
2mb1100
2mb1100n
tl 271
2MBI100NC-120
IT0-22
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CG624
Abstract: KD-NA5111 a440 ceramic AA13 kydcera a016 A017 A019 na51 A440
Text: EC N NO. THE DRAWINGS AND INFORMATION CONTAINED H EREIN ARE THE EXC LUSIVE PR O PER T Y OF ACTEL. THE INFORMATION, DRAWINGS AND DESIGN CONCEPTS CONTAINED H EREIN ARE CONFIDENTIAL/PROPRIETARY, SHALL B E MAINTAINED IN STRICT CONFIDENCE, AND SHALL NOT B E RELEA SED TO ANY THIRD PARTY WITHOUT THE E X P R E S S
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7973DC
NA5111
LG624
LG624
CG624
CG624
KD-NA51
KD-NA5111
a440 ceramic
AA13
kydcera
a016
A017
A019
na51
A440
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AN102A
Abstract: AN101 1BAF IFR 6000
Text: a t- TO i h 7C AK TU ' # £ ì£ AT A- jEij ft / ' sj'óAE Á # M % ¥ )£.i]# & ?L í-t : b X # t o é- & Æ ¥ n % & * -f fà æ ^ w&&^ S £ # * r¿] tV j Æ ^ : # T ^ Ü íjtJ .P T C s M é E i4 # ^ ) * t S A 5 l& t t •íf ^ ^ i t # -it á ?'] ,*■ä ü ^ f r Æ ^
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mbar-25
SiO-10
AN101;
an102
AN102A
AN101
1BAF
IFR 6000
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TIL 815
Abstract: SLD300 SLD322XT SLD322XT-1 SLD322XT-2 SLD322XT-21 SLD322XT-24 SLD322XT-3 diode T3 Marking 802B04
Text: I_ SLD322XT High Power Density 0.5 W Laser Diode Description Package Outline Unit : mm The SLD 322X T is a high power, gain-guided laser diode produced by M O C VD m e th o d *1. C om pared to the SLD 300 Series, this laser diode has a high brightness
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SLD322XT
SLD322XT
SLD300
TIL 815
SLD322XT-1
SLD322XT-2
SLD322XT-21
SLD322XT-24
SLD322XT-3
diode T3 Marking
802B04
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taser circuit
Abstract: 808 nm 100 mw SLD300 SLD323XT SLD323XT-1 SLD323XT-2 SLD323XT-21 SLD323XT-24 SLD323XT-25 SLD323XT-3
Text: , V J I N Ï I_S L D 3 2 3 X T High Power Density 1 W Laser Diode D escription Unit : mm Package O utline The SLD 323X T is a high power, gain-guided laser diode produced by M OCVD m eth od *1. C om pared to the SLD 300 Series, this laser diode has a high brightness
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SLD323XT
SLD323XT
SLD300
600mW
800mV
taser circuit
808 nm 100 mw
SLD323XT-1
SLD323XT-2
SLD323XT-21
SLD323XT-24
SLD323XT-25
SLD323XT-3
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DIODE T25 4 Jo
Abstract: cd photo diode
Text: SONY SLD322XT High Pow er Density 0.5 W Laser Diode D escription Package O utline Unit : mm The SLD 322X T is a high power, gain-guided laser diode produced by M O C VD m e th o d "1. C om pared lo the SLD 300 Series, Ihis laser diode has a high brightness
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SLD322XT
DIODE T25 4 Jo
cd photo diode
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