T1 IRL530N
Abstract: IRL530N NIRF1010
Text: PD - 91348C IRL530N l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 100V RDS on = 0.10Ω G ID = 17A S Description Fifth Generation HEXFETs from International Rectifier
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91348C
IRL530N
O-220
NIRF1010
EEK19
O-220AB
T1 IRL530N
IRL530N
NIRF1010
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PDF
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IRL530N
Abstract: NIRF1010 T1 IRL530N diode avalanche dsa 0,9 14 A
Text: PD - 91348C IRL530N l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 100V RDS on = 0.10Ω G ID = 17A S Description Fifth Generation HEXFETs from International Rectifier
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Original
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91348C
IRL530N
O-220
NIRF1010
EEK19
O-220AB
IRL530N
NIRF1010
T1 IRL530N
diode avalanche dsa 0,9 14 A
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 91348C IRL530N l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 100V RDS on = 0.10Ω G ID = 17A S Description Fifth Generation HEXFETs from International Rectifier
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Original
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91348C
IRL530N
O-220
NIRF1010
EEK19
O-220AB
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 91349C IRL530NS/L HEXFET Power MOSFET Advanced Process Technology l Surface Mount IRL530NS l Low-profile through-hole (IRL530NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description D l VDSS =100V RDS(on) = 0.10Ω G11
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Original
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91349C
IRL530NS/L
IRL530NS)
IRL530NL)
EIA-418.
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PDF
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ak 957 1542 d
Abstract: AN-994 IRL530N IRL530NL IRL530NS IRL530NSL
Text: PD - 91349C IRL530NS/L HEXFET Power MOSFET Advanced Process Technology l Surface Mount IRL530NS l Low-profile through-hole (IRL530NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l D VDSS =100V RDS(on) = 0.10Ω G11
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Original
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91349C
IRL530NS/L
IRL530NS)
IRL530NL)
EIA-418.
ak 957 1542 d
AN-994
IRL530N
IRL530NL
IRL530NS
IRL530NSL
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PDF
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ak 957 1542 d
Abstract: AN-994 IRL530N IRL530NL IRL530NS
Text: PD - 91349C IRL530NS/L HEXFET Power MOSFET Advanced Process Technology l Surface Mount IRL530NS l Low-profile through-hole (IRL530NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l D VDSS =100V RDS(on) = 0.10Ω G11
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Original
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91349C
IRL530NS/L
IRL530NS)
IRL530NL)
die22
EIA-418.
ak 957 1542 d
AN-994
IRL530N
IRL530NL
IRL530NS
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PDF
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IRL530N
Abstract: No abstract text available
Text: PD - 91348B IRL530N l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 100V RDS on = 0.10Ω G ID = 17A S Description Fifth Generation HEXFETs from International Rectifier
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Original
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91348B
IRL530N
O-220
IRL530N
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PDF
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AN-994
Abstract: IRL530N IRL530NL IRL530NS
Text: PD - 91349B IRL530NS/L HEXFET Power MOSFET Advanced Process Technology l Surface Mount IRL530NS l Low-profile through-hole (IRL530NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l D VDSS =100V RDS(on) = 0.10Ω G
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Original
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91349B
IRL530NS/L
IRL530NS)
IRL530NL)
AN-994
IRL530N
IRL530NL
IRL530NS
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PDF
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IRL530N
Abstract: No abstract text available
Text: PD - 95635 IRLI530NPbF Logic-Level Gate Drive l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 100V
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IRLI530NPbF
O-220
I840G
IRL530N
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 95635 IRLI530NPbF Logic-Level Gate Drive l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 100V
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IRLI530NPbF
O-220
I840G
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PDF
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IRL530N
Abstract: No abstract text available
Text: PD - 95635 IRLI530NPbF Logic-Level Gate Drive l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 100V
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IRLI530NPbF
O-220
I840G
IRL530N
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PDF
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AN-994
Abstract: IRFR120 IRFU120 IRL530N IRLR3410 IRLU3410 U120 IR hexfet die irlr3410
Text: PD - 95087A IRLR/U3410PbF l l l l l l l l Logic Level Gate Drive Ultra Low On-Resistance Surface Mount IRLR3410 Straight Lead (IRLU3410) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS(on) = 0.105Ω
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5087A
IRLR/U3410PbF
IRLR3410)
IRLU3410)
O-252AA)
EIA-481
EIA-541.
EIA-481.
AN-994
IRFR120
IRFU120
IRL530N
IRLR3410
IRLU3410
U120
IR hexfet die irlr3410
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PDF
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9508
Abstract: AN-994 IRFR120 IRFU120 IRL530N IRLR3410 IRLU3410 U120
Text: PD - 95087A IRLR/U3410PbF l l l l l l l l Logic Level Gate Drive Ultra Low On-Resistance Surface Mount IRLR3410 Straight Lead (IRLU3410) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS(on) = 0.105Ω
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Original
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5087A
IRLR/U3410PbF
IRLR3410)
IRLU3410)
EIA-481
EIA-541.
EIA-481.
9508
AN-994
IRFR120
IRFU120
IRL530N
IRLR3410
IRLU3410
U120
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 95087A IRLR/U3410PbF l l l l l l l l Logic Level Gate Drive Ultra Low On-Resistance Surface Mount IRLR3410 Straight Lead (IRLU3410) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS(on) = 0.105Ω
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Original
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5087A
IRLR/U3410PbF
IRLR3410)
IRLU3410)
EIA-481
EIA-541.
EIA-481.
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 9.1350B IRLI530N PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D VDSS = 100V l
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Original
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1350B
IRLI530N
O-220
elimina33
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PDF
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1350B
Abstract: IRL530N IRLI530N
Text: PD - 9.1350B IRLI530N PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 100V
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Original
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1350B
IRLI530N
O-220
1350B
IRL530N
IRLI530N
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PDF
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1350B
Abstract: IRL530N IRLI530N
Text: 2002-03-04 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-184-41 IRLI530N HEXFET TO-220 PD - 9.1350B IRLI530N PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive
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IRLI530N
O-220
1350B
IRLI530N
1350B
IRL530N
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PDF
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1350B
Abstract: IRL530N IRLI530N
Text: PD - 9.1350B IRLI530N PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 100V
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Original
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1350B
IRLI530N
O-220
1350B
IRL530N
IRLI530N
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PDF
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AN-994
Abstract: AUIRLR3410 IRL530N
Text: PD - 97491 AUTOMOTIVE GRADE AUIRLR3410 Features Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified *
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AUIRLR3410
AN-994
AUIRLR3410
IRL530N
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PDF
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IRFU N-Channel Power MOSFETs
Abstract: AN-994 IRL530N IRLR3410 IRLU3410
Text: PD - 91607B IRLR/U3410 HEXFET Power MOSFET Logic Level Gate Drive l Ultra Low On-Resistance l Surface Mount IRLR3410 l Straight Lead (IRLU3410) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated Description l D VDSS = 100V RDS(on) = 0.105Ω
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Original
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91607B
IRLR/U3410
IRLR3410)
IRLU3410)
IRFU N-Channel Power MOSFETs
AN-994
IRL530N
IRLR3410
IRLU3410
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 91607B IRLR/U3410 HEXFET Power MOSFET Logic Level Gate Drive l Ultra Low On-Resistance l Surface Mount IRLR3410 l Straight Lead (IRLU3410) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated Description l D VDSS = 100V RDS(on) = 0.105Ω
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Original
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91607B
IRLR/U3410
IRLR3410)
IRLU3410)
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PDF
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IRLR3410
Abstract: IRLU3410 AN-994 IRL530N
Text: 2002-03-06 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-187-06 IRLR3410 HEXFET D-Pak PD - 91607B IRLR/U3410 HEXFET Power MOSFET Logic Level Gate Drive l Ultra Low On-Resistance
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IRLR3410
91607B
IRLR/U3410
IRLR3410)
IRLU3410)
IRLU3410
AN-994
IRL530N
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PDF
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Untitled
Abstract: No abstract text available
Text: IRLR/U3410 I-P A K T O -25 1 A A D -P A K T O -2 52 A A l l l l l l l Logic Level Gate Drive Ultra Low On-Resistance Surface Mount IRLR3410 Straight Lead (IRLU3410) Advanced Process Technology Fast Switching Fully Avalanche Rated D Description VDSS = 100V
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Original
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IRLR/U3410
IRLR3410)
IRLU3410)
O-252AA
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PDF
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Untitled
Abstract: No abstract text available
Text: AUIRLR3410 AUTOMOTIVE GRADE HEXFET Power MOSFET Features l Advanced Planar Technology l Low On-Resistance l Logic Level Gate Drive l Dynamic dV/dT Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax
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AUIRLR3410
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PDF
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