tdq4-M
Abstract: HP 2231 IS42S16128
Text: 28 i 256K x 16 4-MBIT SYNCHRONOUS DYNAMIC RAM ADVANCE INFORMATION JUNE 1997 FEATURES DESCRIPTION • Clock frequency: 100 MHz • Two Bank internal structure: ISSI's 4Mb Synchronous DRAM IS42S16128 is organized as a 131072-word x 16-bit x 2-bank for improved performance.
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131072-word
16-bit
50-pin
DR005-0A
tdq4-M
HP 2231
IS42S16128
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Untitled
Abstract: No abstract text available
Text: ISST 262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY • SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation ADVANCE INFORMATION NOVEMBER 1996 . A u to m a te d B y te W rite and B lo c k E rase — Industry-Standard Command User
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IS28F002BV/BLV
16-KB
96-KB
128-KB
IS28F002BVB-80TI
40-pin
IS28F002BVT-80TI
IS28F002BLVB-120TI
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Untitled
Abstract: No abstract text available
Text: IS24C04 ISSI •1 4,096-BIT SERIAL ELECTRICALLY ERASABLE PROM PRELIMINARY SEPTEMBER 1995 FEATURES • Low p o w e r C M O S — A ctive cu rre n t less than 2 m A — Standby current less than 8 |iA • • • • • • • H a rdw a re w rite protection
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IS24C04
096-BIT
EP81995DS04
T0044D4
IS24C04-P
IS24C04-G
600-mil
IS24C04-PI
IS24C04-GI
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Untitled
Abstract: No abstract text available
Text: I S CMOS SINGLE CHIP 8-BIT MICROCONTROLLER S F ADVANCE INFORMATION AR PIL 1997 FEATURES G ENERAL DESCRIPTION • 8K x 8 ROM IS80C52 only The ISSI IS80C52/32 is a high-performance micro controller fabricated using high-density CMOS technology. The CMOS IS80C52/32 is functionally
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IS80C52
IS80C52/32
16-bit
40-pin
44-pin
600-m
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IS93C66-3GR
Abstract: IS93C66-3 1S93C66-3 W044
Text: ISSI IS93C66-3 4,096-BIT SERIAL ELECTRICALLY ERASABLE PROM AUGUST 1995 FEATURES OVERVIEW • State-of-the-art architecture — Non-volatile data storage — Low voltage operation: 3.0V Vcc = 2.7V to 6.0V — Full TTL compatible inputs and outputs — Auto increment for efficient data dump
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096-BIT
EE81995C66
IS93C66-3
IS93C66-3P
600-mil
IS93C66-3G
IS93C66-3GR
IS93C66-3PI
IS93C66-3GI
IS93C66-3GRI
IS93C66-3
1S93C66-3
W044
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