Untitled
Abstract: No abstract text available
Text: TOSHIBA RF POW ER A M P LIF IE R MODULE S-AU3 Unit in mm UHF POWER AMPLIFIER MODULE HAM FM FEATURES : 2 —R 2 .1 ± C L 2 . Output Power : P 0 ^ 1 5 W £ . Mi n i m u m Ga in : Gp=18.7dB . Efficiency : L . 5 0 0 Input/Output Impedance 4-)Z(a5±Q15 . Guaranteed Stability
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15000pF
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s-au4
Abstract: No abstract text available
Text: TOSHIBA RF POWER AMPLIFIER MODULE UHF POWER AMPL IF IE R MODULE HAM S-AU4 SSB/FM Unit in mm FEATURES : . Output Power : P0 ^ 17W . Minimum Gain : Gp=19.2dB . Efficiency : 2 - * R 2 .1 ± Q 2 a C5 -H -H if) — 35% o â i . 50Q Input/Output Impedance 5H ¿Q5±aiS
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S-AU4
Abstract: uhf 13W amplifier 433 mhz rf power amplifier module efficiency TOSHIBA RF Power Module
Text: TOSHIBA S-AU4 RF Power Amplifier Module U n it in m m UHF Power Amplifier Module HAM SSB/FM Features • Output Power : P0 > 17W • Minimum Gain : Gp = 19.2dB • Efficiency : hT> 35% • 5 0 0 Input/Output Impedance • Guaranteed Stability A bsolute M ax im u m Ratings (Tc = 25°C)
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15000PF
S-AU4
uhf 13W amplifier
433 mhz rf power amplifier module efficiency
TOSHIBA RF Power Module
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S-AV15
Abstract: SAV-15 SAV15
Text: TOSHIBA S-AV15 RF Power Amplifier Module U n it in m m V H F Power Amplifier Module HAM 25W FM 66.0 220 - 225MHz F e a tu re s • Output Power : P0 > 32W • Minimum Gain : Gp = 22.0dB • Efficiency : hT> 45% A b s o lu t e M a x im u m R a t in g s (T c = 2 5 C )
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S-AV15
225MHz
15000PF
S-AV15
SAV-15
SAV15
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S-AV7
Abstract: toshiba rf semiconductors
Text: TOSHIBA S-AV7 RF Power Amplifier Module VHF Power Amplifier Module HAM FM Features • • • • • Output Power : P0 > 28W Minimum Gain : Gp = 21.4dB Efficiency : hT> 45% 50Q Input/Output Impedance Guaranteed Stability Absolute Maximum Ratings (Tc = 25 C)
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S-AV15
Abstract: No abstract text available
Text: TOSHIBA Discrete Semiconductors S-AV15 RF Power Amplifier Module U n it in m m VHF Power Amplifier Module HAM 25W FM 66-0 220 - 225MHz F e a tu re s • Output Power : P0 > 32W • Minimum Gain : Gp = 22.0dB • Efficiency : \ > 45% A b s o lu te M a x im u m R a tin g s (Tc = 2 5 C)
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S-AV15
225MHz
S-AV15
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s-av7
Abstract: No abstract text available
Text: TOSHIBA S-AV7 TOSHIBA RF POWER AMPLIFIER MODULE < ;. ä v 7 VHF HAM FM RF POWER AMPLIFIER MODULE CHARACTERISTIC Frequency Range Output Power Power Gain Total Efficiency Input VSWR Harmonics SYM BO L frange Po G? VT VSW Rin Unit in mm T EST CONDITION — Pi = 200mW
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200mW
s-av7
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S-AV8
Abstract: No abstract text available
Text: TOSHIBA Discrete Semiconductors S-AV8 RF Power Amplifier Module U n it in m m VHF Power Amplifier Module SSB/HAM FM 6 6 .0 6C L0 F e a tu re s • • • • Output Power : P0 > 17W Minimum Gain : Gp = 19.2dB Efficiency : \ > 40% 5 0 ii Input/Output Impedance
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15000PF,
10fjF
S-AV8
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S-AU35AH
Abstract: S-AU35AL S-AU35ASH S-AU35AVH S-AU35AVL 522L TOSHIBA RF Power Module
Text: TOSHIBA S-AU35AVL,S-AU35AL,S-AU35AH,S-AU35AVH,S-AU35ASH TOSHIBA RF POWER AMPLIFIER MODULE S-AU35AVL, S-AU35AL, S-AU35AH, S-AU35AVH, S-AU35ASH Unit in mm 30.0 + 0.5 S-AU35AVL f=360~380MHz 26. 6 ± 0 . 2 RI. 5 + 0. 2 ’2 2 .0 ± 0 . 5 S-AU35AL f = 400~430MHz
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S-AU35AVL
S-AU35AL
S-AU35AH
S-AU35AVH
S-AU35ASH
S-AU35AVL,
S-AU35AL,
S-AU35AH,
S-AU35AVH,
S-AU35ASH
522L
TOSHIBA RF Power Module
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5-53P
Abstract: S-AV10H S-AV10L cs08
Text: TOSHIBA S-AV10L,S-AV10H TOSHIBA RF POWER AMPLIFIER MODULE S-AV10L, S-AV10H Unit in mm VHF RF POWER AMPLIFIER MODULE 2 -R g .l± a 2 • High Gain : Po^l4W , Gp^18.5dB, r¡T ^ 40% • S-AV10L 1 3 5 -155MHz • S-AV10H 1 5 0 -175MHz Ti £ 4 r-0 a 5 ± Q 1 5
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S-AV10L
S-AV10L,
S-AV10H
135-155MHz
S-AV10H
150-175MHz
5-53P
f-145MHz
5-53P
cs08
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TOSHIBA RF Power Module S-AV17
Abstract: S-AV17 toshiba s-av17 toshiba power module 5-53L
Text: S-AV17 TOSHIBA TOSHIBA RF POWER AMPLIFIER MODULE S - AV1 7 Unit in mm VHF 50W FM RF POWER AMPLIFIER MODULE HAM Application 6 6.0 6 0.0 r 2 B 2.1 ±0.2 5 2.9 - 0 .5± 0.1 5 MAXIMUM RATINGS Tc = 25°C (D SYMBOL CHARACTERISTIC DC Supply Voltage vcc DC Supply Voltage
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S-AV17
400mW
5-53L
146MHz
TOSHIBA RF Power Module S-AV17
S-AV17
toshiba s-av17
toshiba power module
5-53L
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S-AV22A TOSHIBA
Abstract: S-AV22A S-AV22
Text: S-AV22A TOSHIBA S-AV22 A TOSHIBA RF POWER AMPLIFIER MODULE Unit in mm VHF BAND HAM FM RF POWER AMPLIFIER MODULE HAND-HELD TRANSCEIVER 42 ± 1 High Gain Po ^7W, Gp = 26.6dB Min. Small Package 30 ± 1 s: 2 —R l. 5 '± 0 .2 MAXIMUM RATINGS (Tc = 25°C) SYMBOL RATING
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S-AV22A
146MHz
S-AV22A TOSHIBA
S-AV22A
S-AV22
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049G1
Abstract: No abstract text available
Text: PHOTO RELAY TLP595A T L P 5 9 5 A TELECOMMUNICATION DATA ACQUISITION MEASUREMENT INSTRUMENTATION The TOSHIBA TLP595A consists of an alum inum gallium arsenide infrared em itting diode optically coupled to a photo-MOS FET in a six lead plastic DIP package.
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TLP595A
TLP595A
300mA
2500Vrms
UL1577,
E67349
300mA
049G1
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TLP759F TOSHIBA PHOTOCOUPLER DIGITAL LOGIC GROUND ISOLATION GaAMs IRED + PHOTO-IC TLP759F LINE RECEIVER MICROPROCESSOR SYSTEM INTERFACES SWITCHING POWER SUPPLY FEEDBACK CONTROL TRANSISTOR INVERTOR The TOSHIBA TLP759F consists of a GaA£As high-output light
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TLP759F
TLP759F
TLP759.
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TLP597G TOSHIBA PHOTOCOUPLER PHOTO RELAY TLP597G Unit in mm CORDLESS TELEPHONE PBX MODEM The TOSHIBA TLP597G consists of a gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a six lead plastic DIP package DIP6 . The TLP597G is a bi-directional switch which can replace mechanical
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TLP597G
TLP597G
UL1577,
E67349
EN60065
EN60950
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Tlp550
Abstract: No abstract text available
Text: SEMICONDUCTOR TO SHIBA TECHNICAL DATA TOSHIBA PHOTO COUPLER TLP550 INFRARED LED + PHOTO IC TLP550 DEGITAL LOGIC ISOLATION LINE RECEIVER FEEDBACK CONTROL PO W ER SUPPLY CONTROL SWITCHING PO W ER SUPPLY TRANSISTOR INVERTOR TLP550 constructs a high em itting diode and a one chip photo diodetransistor.
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TLP550
TLP550)
TLP550
2500Vrms
E67349
TTLP55Q-6*
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TLP598B TOSHIBA PHOTOCOUPLER TELECOMMUNICATION DATA ACQUISITION MEASUREMENT INSTRUMENTATION PHOTO RELAY TLP598B The TOSHIBA TLP598B consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a six lead plastic DIP DIP6 .
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TLP598B
TLP598B
UL1577,
E67349
200mA
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TLP599B TOSHIBA PHOTOCOUPLER TELECOMMUNICATION DATA ACQUISITION MEASUREMENT INSTRUMENTATION PHOTO RELAY TLP599B The TOSHIBA TLP599B consists of a gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a six lead plastic DIP DIP6 .
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TLP599B
TLP599B
UL1577,
E67349
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S-AV15
Abstract: SAV15
Text: i TOSHIBA RF POWER AMPLIFIER M ODULE ^ -S-AV15 VHF POWER AMPLIFIER MODULE HAM 25W Ff1 Unit in mm 220~225MHz BAND . Output Power : Po ^ 32W 2- Rai±a2 . Minimum Gain : Gp=22.0dB
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-----------------------------------S-AV15
225MHz
200mW
S-AV15
S-AV15
SAV15
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jb33
Abstract: No abstract text available
Text: T O SH IB A TLP798G TOSHIBA PHOTOCOUPLER PHOTO RELAY TLP798G TELECOMMUNICATION U nit in mm DATA ACQUISITION MEASUREMENT INSTRUMENTATION The TOSHIBA TLP798G consists of an alum inum gallium arsenide infrared em itting diode optically coupled to a photo-MOS FET in a
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TLP798G
TLP798G
jb33
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S-AU3
Abstract: ltc3
Text: TOSHIBA RF POWER AMPLIFIER MODULE S-AU3 UHF POWER AMPLIFIER MODULE HAM FM Unit in mm FEATURES : 2—R2.1±a2 . Output Power : P0 ^15W . Minimum Gain : Gp=18.7dB . Efficiency : 7t ^40% . 500 Input/Output Impedance 4—0û5±ai5 . Guaranteed Stability yp.5
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200mW
15000pF
S-AU3
ltc3
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TLP598G TOSHIBA PHOTOCOUPLER PHOTO RELAY TLP598G TELECOMMUNICATION Unit in mm DATA ACQUISITION MEASUREMENT INSTRUMENTATION The TOSHIBA TLP598G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a
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TLP598G
TLP598G
11-9A1
UL1577,
E67349
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TLP599G TOSHIBA PHOTOCOUPLER PHOTO RELAY TLP599G TELECOMMUNICATION Unit in mm DATA ACQUISITION MEASUREMENT INSTRUMENTATION 6 5 4 "n TT r r The TOSHIBA TLP599G consists of a gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a six lead
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TLP599G
TLP599G
UL1577,
E67349
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TD62M 8501F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M8501 F 8CH LOW SATURATION VOLTAGE SINK DRIVER TD62M8501F is Multi Chip IC incorporates 8 low saturation discrete 2SC3420 transistors. This IC is suitable for a battery use motor drive and LEE
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TD62M
8501F
TD62M8501
TD62M8501F
2SC3420)
HSOP16
2SC3420
HSOP16-P-300-1
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